CN1914744A - 具有作用区的半导体结构 - Google Patents
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Abstract
本发明涉及一种具有作用区的半导体结构,如发光二极管或者光电二极管(10、16、24、26、36、46、54、68、74、80),它包括一个具有至少两个作用区(AZ1-AZn)的基底(SUB),其中每个作用区发出或吸收不同波长的光线。为了实现多波长二极管,第一(下部)作用区(AZ1)在基底(SUB)的表面上生长,其中一个或者多个其它作用区(AZ1-AZn)上下依次取向附生地生长,并且其中作用区(AZ1-AZn)通过作为低欧姆电阻的隧道二极管(TD1-TDn)从下部作用区(AZ1)直到上部作用区(AZn)进行串联。
Description
本发明涉及一种按权利要求1前序部分所述的具有作用区的半导体结构以及一种用于制造这种半导体结构的方法。本发明还涉及一种混合色传感器以及一种包括该具有作用区的半导体结构的彩色显示器。
在Applied Physics Letters第79卷Nr.16,2001,第2532-2534页中I.Ozden等人的论文“A dual-wavelength indium galliumnitride quantum well light emitting diode”中描述了一种上述类型的具有作用区的半导体结构。在此涉及一种单片双重波长(蓝/绿)的发光二极管(LED),它具有两个活性的铟镓氮化物/氮化镓(InGaN/GaN)多重量子阱部分。这两个部分是一个唯一的垂直取向附生结构的部分,其中在LED之间插入了p++/n++/InGaN/GaN隧道节。这些部分分别在470nm和535nm时发射。
EP-A-1403935公开了一种发光二极管,它具有第一作用区域、第二作用区域和隧道节。该隧道节包括第一导通型层和第二导通型层,这两个层比包围第一作用区域的第一导通型层和第二导通型层薄。隧道节允许作用区域的垂直堆叠,由此由该元件产生的光无需放大光源的大小就能提高。
EP-A-0 727 830涉及一种用于制造发光二极管(LED)的方法,其中这种发光二极管具有包括多个层的相邻的第一和第二层,它们连接在中间件上。制造可以根据晶圆键合方法进行。当中间层的构造使得通过该元件保证了高的导电能力时,多LED结构可以与其它层连接。上部LED结构的层的掺杂类型相应于下部LED结构的层的掺杂类型。因此两个LED结构相互以相同的极性布置。待相互连接(晶圆键合)的表面应该掺杂程度非常高。当结构键合时,高掺杂度的隧道节用与LED的相反极性构造。作为替代方案提出,隧道节取向附生伸展。
在WO-A-00/77861中公开了一种具有作用区的半导体结构,该半导体结构包括多个不同波长的选择性活性层,其垂直堆叠布置在基底上,从而可以使入射的光线横越具有均匀下降的能带间隙的层。在此不同能量的光子被选择性地吸收或者由活性层发射。接触机构分别设置在每个层或者一组具有相同参数的层的外侧,以便将电荷排出,这些电荷是在吸收光子的层中产生的和/或者由载流子导入发射光子的层中。这种元件的使用目的例如是显示器或者太阳能电池。
EP-B-0 649 202涉及一种半导体激光器以及其制造方法。半导体激光器包括多个通过钎焊相互层叠的半导体芯片,使得其激光发射表面相互共平面布置,其中每个激光器芯片具有一个基底,该基底具有设置在其上的取向附生层,取向附生层包括一层活性层。
在WO99/57788中公开了另一种上述类型的发光半导体装置。在那里描述了一种双色发光半导体装置,该装置在其正面和背面之间设置了具有第一作用区的发射第一波长的光线的第一表面发射的发光二极管和具有第二作用区的发射第二波长的光线的第二表面发射的发光二极管,其中在两个作用区之间设置了第一反射层,其对于第一波长具有反射性,而对于第二波长具有透过性。另外,在第二作用区和背面之间设置了第二反射层,其对于第二波长具有反射性。反射层使得更好地利用两个二极管朝着背面方向发射的光线,并且最好由具有不同的高度和低的折射率的层组成的多层系统构成,其中这些层最好由一种适配于格栅的半导体材料制成。
对于已知的半导体装置,作用区设置在基底的两个相对置的表面上,从而从下部作用区发射的光线必须横穿基底以及至少一个反射层,由此可能产生光学损失。另外使用这种已知的发光半导体装置只能产生两条光线。因此其作为彩色显示器的应用是受限的。
由此出发本发明的任务是对一种具有作用区的半导体结构以及用于这种半导体结构制造的方法进行改进,使用按本发明的半导体结构以及按本发明的方法消除了现有技术中的缺点。特别是对一种发光半导体装置以及一种用于制造这种发光半导体装置的方法进行改进,使得改善发光效率,简化制造方法并且可以在半导体材料内部产生多个不同波长的光子发射峰。
按照本发明,该任务通过第一实施方式如此解决,即半导体结构是发射或者吸收确定多的光波长度的多波长二极管,在下部作用区和上部作用区之间取向附生(epitaktisch)生出一个或者多个其它作用区,最下部的作用区具有微小的能带间隙(Bandlücke),其中后接的作用区分别具有比前面的作用区更高的能带间隙,并且用于隔离二极管或者隧道二极管生长或者取向附生的半导体材料或者具有一个间接带结(Bandübergang),或者具有一个分别略高于其下使用的半导体材料的能带间隙。
使用按本发明的发光半导体装置-其也称为多波长二极管-可以在芯片内产生不同波长的多个光子发射峰。其原理在于,在一个合适的基底上生长有取向附生的半导体材料。发光的构造成pn或者np结的作用区在芯片中从下向上串联。在此这种联接取向附生地通过隔离层如隔离二极管进行,隔离二极管作为低欧姆电阻使用。这种隔离二极管包括一个np或者pn结,一个非常微小的反向电压在其上下降。
根据一种替代方案的实施方式,根据本发明该任务如此解决,半导体结构是发射或者吸收确定多的光波长度的多波长二极管,一个或者多个另外的作用区取向附生地在下部作用区和上部作用区之间生长,最下部的作用区具有微小的能带间隙,其中后接的作用区分别具有比前面的作用区更高的能带间隙,并且隔离层是金属接触。
在该作为替代方案的实施方式中,作为中间层为串联联接使用了能导通的、例如金属接触。
基底的材料是GaAs、Ge、InP、GaSb、GaP、InAs、Si、SiGe、SiC、SiGe:C、蓝宝石、金刚石。
另外,作用区的材料是GaAs、GaInP(合适的成分)、AlGaAs(多种合适的成分)、GaInAs(合适的成分)、AlInGaP(多种合适的成分)、GaAsN、GaN、GaInN、InN、GaInAlN(合适的成分)、GaAlSb、GaInAlSb、CdTe、MgSe、MgS、6HSiC、ZnTe、CgSe、GaAsSb、GaSb、InAsN、4H-SiC、α-Sn、BN、BP、BAs、AlN、ZnO、ZnS、ZnSe、CdSe、CdTe、HgS、HgSe、PbS、PbSe、PbTe、HgTe、HgCdTe、CdS、ZnSe、InSb、AlP、AlAs、AlSb、InAs和/或AlSb,或者包含这些材料中的一种或者多种。
带式发射二极管的特征在于以下结构:
-GaAs或Ge基底;
-在基底上生长的GaAs二极管(下二极管);
-其上以交替的顺序,在GaAs二极管上生长的隔离二极管如GaInP隔离二极管或者AlGaAs隔离二极管后面接着在隔离二极管上生长的GaInP二极管或者AlGaAs二极管,其中二极管(AZ1-AZn)的数量、峰的数量确定了带式发射区域。
带式发射区域如此确定,二极管的数量、峰的数量以及其宽度构成了邻接的发光区域,因此获得了一个合成的发射区域,以这种方式该区域通过一个唯一的峰不能实现。
另外,在一个作用区上,吸收层用作用区的pn层的相同材料生长。这是为了在串联情况下各作用区发射的光的强度相匹配。
对于这种情况,也就是每个或者选出的各作用区要分别操纵,那么也可以为各作用区分别设置一个自己的金属接触用于连接引线。
只有一个芯片的褐色的混合色LED最好具有下面的构造:
-GaA或者Ge基底;
-在基底上生长的下部作用区,例如由GaInP(也可以AlGaInP)制成,其合适的发射波长在红色区域内;
-在下部作用区上生长的第一隔离二极管,由GaInP或者AlGaInP制成,其能带能量高于位于下面的作用区;
-在隔离二极管上生长的中间作用区,由AlInGaP制成,其发射波长处于黄色区域内;
-第二隔离二极管,其能带能量低于位于下面的作用区;
-在第二隔离二极管上生长的上部作用区,由AlInGaP制成,其发射波长处于绿色区域内。
另一种优选的实施方式的特征在于该混合色LED包括:
-GaAs或者Ge基底(SUB);
-在基底上生长的下部作用区(AZ1),后面接着另外两个作用区(AZ2-AZn),在其之间分别设置了一个隧道二极管(TD1-TDn),并且其中上部作用区(AZn)具有一个金属接触(K)用于连接电接头。
在此可以将在作用区之间设置的金属接触进行粘接、钎焊、挤压、键合或者焊接。
所希望的混合色的一部分通过具有不同作用区的具有隔离二极管的1-芯片-构件产生,所希望的混合色的第二部分通过另一个芯片产生,其中作用区通过金属连接接合在一起。由此产生了所希望的混合色的整个光谱。
在一种特别优选的实施方式中,下部作用区由具有波长大约为620nm的AlInGaP材料制成,中间作用区由具有波长大约为550nm的AlInGaP半导体材料制成,上部作用区由具有波长在大约400-450nm范围内的GaInN半导体材料制成。对于这种实施方式,混合色“白”由一个唯一的芯片产生。
另一种优选的实施方式在于,具有作用区的半导体结构是混合色传感器,其中作用区是光电二极管。一种优选的混合色传感器具有下列构造:
-GaAs或者Ge基底,在其下侧面上设置以及生长金属接触,并在其上侧面设置以及生长GaInP或者AlInGaP光电二极管;
-在光电二极管上设置由AlInGaP、AlGaAs或者GaInP材料制成的np隔离二极管;
-由AlInGaP光电二极管构成的第二pn结;
-np隔离二极管;
-第三pn结作为GaAlN或者AlGaInN发光二极管。
在此第一光电二极管处于λ=600nm-680nm的波长范围内,中间光电二极管处于λ=550nm的波长范围内,并且第三光电二极管处于λ=400nm-450nm的波长范围内,并且由此是一种1-芯片白光分析仪。在此每个探测光线的光电二极管设有一个金属接触用于连接电引线。
通过按本发明的混合色传感器的构造-其中作用区是光电二极管-可以将入射的混合色光选择性地吸收到所属的作用区中,从而可以选择性地获取在其中产生的电流。
AlGaInN光电二极管的构造的优点在于,总地产生一个白光探测器,该探测器可分析三原色蓝、绿和红的强度、也就是说通过在各作用区中产生的电流分析。
最后,本发明还涉及,具有作用区的半导体结构构成彩色显示器。在此彩色显示器可以包括多个根据本发明的发光半导体装置,其中彩色显示器的象素与发光半导体装置相对应,并且其中每个象素和相应的颜色可以选择性地控制。
本发明的其它细节、优点和特征不仅从权利要求、其中的可以是单独的也可以是相互组合的特征获得,而且还从下面对附图中优选的
实施例的说明中获得。
附图示出:
图1a、1b示出了双峰二极管的结构示意图,具有所属的波长-强度分布图;
图2示出了不同半导体参量的材料特性的一览图;
图3a、b示出了带式发射二极管的实施例,具有所属的示例性的波长-强度分布图;
图4a、b示出了按图3的具有设置在一个作用区和一个隔离二极管之间的吸收层的带式发射二极管的实施例,和示例性的波长-强度分布图;
图5示出了具有明确操纵的作用区的示例性的多波长二极管的结构示意图;
图6a、b示出了示例性的混合色发光二极管(褐色)的结构示意图,具有示例性的波长-强度分布图;
图7a、b示出了混合色发光二极管(白色)的结构示意图,具有示例性的波长-强度分布图;
图8a、b示出了示例性的混合色传感器的结构示意图,具有所属的波长-强度分布图;
图9a、b示出了示例性的具有隔离二极管接触或者金属接触的多峰发光二极管的结构示意图,还示出了示例性的波长-强度分布图;
图10示出了具有可分开操纵的二极管结构的半导体结构的结构示意图;
图11示出了具有可分开操纵的二极管结构的半导体结构的结构示意图;
图12示出了彩色显示器的结构示意图。
图1示出了具有作用区AZ的半导体结构10的结构示意图,其可以称为双峰发光二极管。该双峰二极管10包括一个基底SUB,该基底例如由GaAs或者Ge材料制成。基底SUB的下表面12设有金属接触K1,其中在一个上表面14上生长第一(下部)作用区AZ1作为例如GaAs二极管。在下部作用区AZ1上设置了一个分离层TD1作为隔离二极管例如GaInP隔离二极管,其具有大约40nm范围内的厚度。该隔离二极管TD对于构造成pn结的下部作用区AZ1的串联联接用作以及起到低欧姆连接电阻的作用。在隧道二极管TD上生长另一个上部作用区AZ2,其例如是GaInP二极管。从图1b可以得到示例性的光谱分布,其中第一峰16处于680nm的波长范围内(GaInP),而第二峰18处于870nm的波长范围内(GaAs)。
用于构造按本发明的半导体装置的半导体材料最好符合以下标准:
-能够在基底SUB上取向附生地生长;
-合适的能带间隙和合适的掺杂水平,这种掺杂水平产生希望的发射波长;
-最下面的pn结AZ1具有用于产生光线的最小能带间隙,位于其上的构造成pn结的作用区AZ1-AZn分别具有更高的能带间隙,因为否则的话位于其下的二极管LED1的发射的光线会被吸收;
-用来制造隔离二极管TD的半导体材料的能带间隙同样高于位于其下的作用区AZx的能带间隙,因为否则的话在那里会发生吸收,其中隔离二极管TD理想地由一种间接的半导体过渡部分构成;
-所使用的半导体材料在位于其下的层上取向附生地晶体生长。
在图1a中示意性地示出的具有作用区的半导体结构10是基础,根据它可以构造一系列造型方案。例如可以制造多峰二极管,其针对确定的应用情况。另外可以制造带式发射二极管,其从确定的初始波长到确定的终止波长发射准连续的光线。另外可以制造只有一个芯片的混合色LED。
下面来说明多波长二极管的其它示意性的结构。
由示例性的取向附生的图表可以看到示例性的合适的材料系统。由此基底SUB例如可以选作GaAs基底或者Ge基底。其上例如对于取向附生的生长合适的作用区AZ材料如GaAs、GaInP(合适的成分)、AlGaAs(多种合适的成分)、GaInAs(合适的成分)、AlInGaP(多种合适的成分)或者甚至是GaAsN、GaN、InN、GaInN;GaInAlN(合适的成分)、GaAlSb、GaInAlSb、CdTe、HgTe、HgCdTe、CdS、ZuSe、InSb、AlP、AlAs、AlSb、InAs、AlSb、InAs、AlSb、MgSe、MgS、6HSiC、ZnTe、CdSe、GaAsSb、GaSb、InAsN、4H-SiC、α-Sn、BN、BP、BAs、AlN、ZnO、ZnS、ZnSe、CdSe、CdTe、HgS、HgSe、PbS、PbSe、PbTe。
也可以使用其它基底SUB,例如InP、GaSb、InAs、Si、GaP、金刚石、蓝宝石、SiGe、SiC、SiGe:C以及更多其它材料。
图3中示出了示例性的带式发射二极管16的纯结构示意图。带式发射二极管16包括一个基底SUB如GaAs或者Ge基底,该基底具有下部接触K1和在该基底上生长的作用区AZ1作为GaAs二极管(下部二极管)。在LED上设置了一个隔离二极管TD作为低欧姆连接电阻用于串联联接到下一个LED2。隔离二极管TD1由AlGaAs或者GaInP制成。此外下一个作用区AZ2作为pn结生长(具有较少Al含量的AlGaAs二极管)。接着还使用了一个np隔离二极管TD2,从而最终隔离二极管TD和作用区AZ相互交替。在最上部的作用区AZ6上(示例性)设置连接K2。
在图3b中示出了光谱分布18,其示出了六个峰P1-P6的分布,以及由此产生的包络线E,其同时示出了带式发射区域。
如果使用例如波长范围λ=870nm的GaAs二极管作为下部作用区AZ1,接下去是AlGaAs二极管(λ可在875-625nm调节)作为TD1,并接着是AlInGaP混合晶系(λ可从650nm调节到540nm)中的合适的成分,那么可以产生λ=870nm-540nm的带式发射区域E。这意味着红外到绿色的带式发射。
这种构思也可以制造具有空白区域、也就是发射空隙的带式发射二极管。
如果唯一一个作用区AZn(发光二极管)的强度-如图4a、b所示-显示出更明亮的或者强度更大的峰20,那么就有可能直接在作用区上面放置了合适厚度的并且与制成pn层AZn相同的材料的吸收层ABS。
图4b示出了没有吸收层的峰20和具有吸收层ABS的校正的峰22。
图5示出了发光半导体装置24的结构示意图,该装置包括一个基底SUB,该基底具有在其上生长的作用区AZ1-AZ6,这些作用区通过隧道二极管TD1-TD5相互串联,其中这些隧道二极管设置在作用区AZ1-AZ6之间。这种发光半导体装置24的实施方式的特征在于:每个作用区AZ1-AZ6设有金属接触K1-K6,借助于金属接触可以在半导体结构内部确定波长的峰,通过相应的信号取可明确地操纵,所述半导体结构也可以称为多波长二极管堆垛。由此可以对发光峰进行有针对性地控制或者调节,更确切地说根据其亮度/强度、其颜色通过选择峰以及根据所需要的混合色或者期望的带式发射分区调节。
图6a示出了一种发光半导体装置26的结构示意图,其也可以称为混合色LED,并且发褐色光。该示例性的发光半导体装置26包括一个基底SUB作为GaAs或者Ge基底。GaInP二极管AZ1在其上面生长,该二极管覆盖了大约λ=680nm的波长区域。其上接着一个np隔离二极管TD1。该隔离二极管TD1最好是多层结构,并且具有比位于下面的AZ1更高的能带隙,并且用作低欧姆连接电阻串联到另一pn结AZ2,该pn结在材料系统AlInGaP中的波长λ大约为590nm。接着还有一个np隔离二极管TD2生长,并在其上还接着第三pn结作为作用区AZ3,该作用区用具有波长范围λ大约为550nm的AlInGaP材料制成。
从图6b可以获得光谱分布28,其示出了三个颜色峰30、32、34的变化曲线,其对于人眼来说是一种“褐色LED”的映像。因为有不同的褐色调,主要取决于所使用的波长和产生的发射峰30、32、34的强度。褐色的映像可以更多淡红色、淡黄色或者淡绿色地构成。
图7a示出了用于发出白光的混合色LED36的结构示意图。混合色LED36包括一个基底SUB,由AlInGaP材料(颜色红色)制成的下部作用区AZ1在该基底上生长,接着是由具有高能带隙的AlInGaP材料制成的隧道二极管TD1、由AlInGaP材料(颜色绿色)制成的中间作用区AZ2、另一个由AlInGaP材料(更高的能带隙)制成的隧道二极管TD2和由波长范围λ大约为400nm-450nm的GaInN材料或者AlGaInN材料制成的上部作用区AZ3。
在图7b中示出了光谱分布38,包括三色峰40、42、44,其对于人眼产生具有颜色“白色”的LED的映像。
因为有多种白色映像,所使用的波长和发射峰40、42、44的相应的强度具有重要的意义。白色的映像可以更多淡红色、淡绿色或者淡蓝色地构成。
另外白色映像可以用标准比色图表(Normfarbtafel)的各种颜色产生,其直接连接线路通过光谱白色点延伸(对于两种颜色)。如果使用三种颜色,那么在标准比色图表中展开颜色三角形。根据使用的颜色和其强度在此也可以获得期望的白色点。根据上述原理,几乎可以实现任意多的混合色。颜色/波长的变型方案以及其强度必须根据希望的色调来协调。
图8a示出了混合色传感器46的纯结构示意图,其中作用区PD1-PD3是光电二极管。混合色传感器46包括一个基底SUB,在其下侧面上设置了第一电接触K1。在基底SUB的上侧面上例如生长一个第一作用区PD1作为GaInP或者AlInGaP光电二极管,其覆盖了λ大约为600nm-680nm的波长区域。材料的能带间隙比待探测的光线的波长略长。在光电二极管PD1的上侧面的一个区域中设置了导电接触K1,并且在另一个表面区域中设置了由AlInGaP、AlGaAs或者GaInP材料制成的np隔离二极管TD1,该隔离二极管作为低欧姆连接电阻用于串联到第二pn结。在隔离二极管TD1上生长另一个光电二极管PD2,它是波长范围λ=大约550nm或者波长稍微更长的AlInGaP二极管。其上又是一个np隔离二极管TD2,并且接着生长另一个光电二极管PD3作为波长范围λ为400-450nm范围内的GaInN二极管。RGB-白色-LED的特殊的波长选择性地吸收到光电二极管层PD1-PD3中,并且产生电信号,该电信号可以读取并进行分析处理。信号48、50、52的相应的强度可以从按图8b的强度分布图中获得。根据上述原理,可以实现几乎任意多混合色传感器。
如上所述,多峰二极管或者多波长二极管与隔离二极管接触TD1-TDn或者导电接触LK串联,这在按图9a的白色发光RGB二极管54的实例中进行描述。混合色LED54包括一个具有在其下侧面上的接触K1基底SUB,以及下部作用区AZ1,接着是隔离二极管TD1和中间作用区AZ2,如果一种确定的材料系统不能在位于其下的系统上生长,例如由于过大的晶格缺陷匹配、晶体结构、生长温度等,那么导通接触LK例如金属接触可以作为串联联接使用。借助于片到片的键合可以将其例如粘接、钎焊、键合、焊接或者挤压,由此在两个芯片之间可实现接触。由基底(SUB)、作用区AZ1、隔离二极管TD1和中间发光二极管AZ2构成的二极管堆垛58在表面上只设置了一个键合接触BK。另一个芯片56-包括一个基底SUB和一个具有作用区AZ3的发光二极管-用设置在其下侧面上的金属接触K与下部芯片58的键合接触BK连接,从而形成光滑的过渡部分。
例如下部芯片构造的特征在于,在基底上生长如GaInP或者AlInGaP二极管作为发光二极管AZ1,具有λ在600nm-680nm范围内的波长。其上生长AlInGaP、AlGaAs或者GaInP构成的np隔离二极管TD1,其作为用于串联的低欧姆连接电阻通到中间pn结AZ2。中间pn结作为发光二极管LED2是具有λ在550nm范围(绿色)内的波长的AlInGaP二极管。发光二极管AZ2设有导电BK。通过该芯片58固定上部芯片56,例如粘接、钎焊、键合、焊接、挤压等,其中该上部芯片可以发出蓝色光,并且例如由一种材料如GaInN、AlGaInN或者GaN材料与透明或者导通基底制成。上部芯片56的二极管AZ3具有λ从大约400-450nm范围内的波长。
在图9b中示出了光谱分布60,还示出了三色峰62、64、66的变化曲线,其给人眼的是白色的映像。
因为有许多白色组合,这里取决于所使用的波长和产生的发射峰的强度。白色的映像可以更多淡红色、淡绿色或者淡蓝色地构成。
白色映像可以用标准比色图表的任意颜色产生,其直接连接线路通过光谱白色点延伸(对于两种颜色)。当使用三种颜色时,那么在标准比色图表中展开颜色三角形。根据颜色的使用和其强度,这里也可以实现期望的光谱白色点。根据这种原理,可以实现许多混合色。颜色/波长和强度的变化方案必须与期望的色调协调。
发光半导体装置68的另一种实施例在图10中示出。这使得在结构内部划分单峰的确定的强度,并通过提高面积或者增加面积实现强度提高。另外也可以由此对整个结构只对生长的结构的部分区域提供电信号。
整个二极管结构70在具有设置在下侧面上的接触K1的基底SUB上生长。通过将生长的结构进行工艺上的分离和工艺上的去除可以获得减小的二极管结构72。第一二极管结构70包括一列发光二极管AZ1-AZ5,其通过隔离二极管TD1-TD5相互串联。在最上方的AZ5上设置了接触K2。
二极管结构72还包括平行于二极管堆垛70的二极管层的发光二极管AZ1-AZ3,其由隔离二极管TD1、TD2分离。在上部发光二极管AZ3上设置了接触K3。
通过这种结构可以通过部分增加面积提高发光二极管AZ1、AZ2和发光二极管AZ3的强度。
一种作为替代方案的实施例包括一个结构74,其中在基底SUB上设置了两个二极管结构76、78。在此如上所述的二极管堆垛包括一列例如五个发光二极管AZ1-AZ5,其分布通过隔离二极管TD1-TD5连接。
二极管结构78包括发光二极管AZ1、AZ2,其通过隔离二极管TD1和TD2串联。结构74的特征在于,通过部分区域78可以为发出的光线另外加入电信号。
上述技术方案使得在结构68、74内部可以划分确定的强度峰。另外通过提高面积可以提高强度。由此也可以对整个结构70、72或者76、78为一个部分区域加入电信号。
所有前述系统和技术方案可以在芯片结构(模具(dies))中使用或者作为显示器使用。彩色显示器80的示意性结构例如在图12中示出,包括一个基底SUB,该基底具有下接触K1,其中每个象素82甚至可以选择性地控制相应的颜色。
在此象素82包括上部参照图1-11所述的实施例的结构。在此由一种RGB芯片出发。通过这种显示器结构可以制造屏幕,其发出非常明亮的光,并且由于非常校的象素结构具有非常高的分辨率。
多波长二极管的原理可以用于多种用途,例如:
-在照明领域中借助于芯片通过产生非常明亮的白色LED和混合色LED;
-多波长光电二极管(传感器)用于监控混合色光线,并探测光谱组成;
-传感装置中的带式发射二极管(光谱分析、颜色测量以及更多用途);
-单芯片设计可以根据单独的要求制造;
-用于具有非常高的分辨率和光强的小型的和中型的屏幕显示器;
-在相同的传输频率下(玻璃纤维传输)用于不同颜色信号的数据传输等等。
Claims (18)
1.具有作用区的半导体结构,如发光二极管或者光电二极管(10、16、24、26、36、46、54、68、74、80),它包括具有至少两个作用区(AZ1-AZn)的基底(SUB),其中每个作用区发出或吸收不同波长的辐射,其中第一(下部)作用区(AZ1)在基底(SUB)的表面上生长,其中至少另一个(上部)作用区(AZ1-AZn)取向附生地生长,并且作用区(AZ1-AZn)通过至少一个作为低欧姆电阻的分离层(TD1-TDn)从下部的作用区(AZ1)直到上部作用区(AZn)进行串联,其中分离层(TD1-TDn)是隔离二极管或者隧道二极管形式的反极性np结或者pn结,其特征在于:半导体结构(10、16、24、26、36、46、54、68、74、80)是发出或者吸收确定多的光波长的多波长二极管,在下部作用区(AZ1)和上部作用区(AZn)之间取向附生地生长一个或者多个另外的作用区(AZn),最下部的作用区(AZ1)具有微小的能带间隙,其中接下去的作用区(AZ2-AZn)分别具有比前面的作用区更高的能带间隙,并且用于生长或者取向附生隔离二极管或者隧道二极管(TD)的半导体材料或者具有一个间接的带结,或者具有分别略高于其下使用的半导体材料的能带间隙。
2.具有作用区的半导体结构,如发光二极管或者光电二极管(10、16、24、26、36、46、54、68、74、80),它包括具有至少两个作用区(AZ1-AZn)的基底(SUB),其中每个作用区发出或吸收不同波长辐射,其中第一(下部)作用区(AZ1)在基底(SUB)的表面上生长,其中至少另一个(上部)作用区(AZ1-AZn)取向附生地生长,并且作用区(AZ1-AZn)通过至少一个作为低欧姆电阻的分离层(TD1-TDn)从下部的作用区(AZ1)直到上部作用区(AZn)进行串联,其特征在于:半导体结构(10、16、24、26、36、46、54、68、74、80)是发出或者吸收确定多的光波长的多波长二极管,在下部作用区(AZ1)和上部作用区(AZn)之间取向附生地生长一个或者多个另外的作用区(AZn),最下部的作用区(AZ1)具有微小的能带间隙,其中接下去的作用区(AZ2-AZn)分别具有比前面的作用区更高的能带间隙,并且分离层(TD1-TDn)是金属接触(K)。
3.按权利要求1或者2所述的具有作用区的半导体结构,其特征在于:所述基底(SUB)的材料是GaAs、Ge、InP、GaSb、GaP、InAs、Si、SiGe、SiC、SiGe:C、蓝宝石、金刚石。
4.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:所述作用区(AZ1-AZn)的材料是GaAs、GaInP(合适的成分)、AlGaAs(多种合适的成分)、GaInAs(合适的成分)、AlInGaP(多种合适的成分)、GaAsN、GaN、GaInN、InN、GaInAlN(合适的成分)、GaAlSb、GaInAlSb、CdTe、MgSe、MgS、6HSiC、ZnTe、CgSe、GaAsSb、GaSb、InAsN、4H-SiC、α-Sn、BN、BP、BAs、AlN、ZnO、ZnS、ZnSe、CdSe、CdTe、HgS、HgSe、PbS、PbSe、PbTe、HgTe、HgCdTe、CdS、ZnSe、InSb、AlP、AlAs、AlSb、InAs和/或AlSb,或者包含这些材料中的一种或者多种。
5.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:带式发射二极管(16)具有如下结构:
-GaAs或者Ge基底(SUB);
-在基底上生长的GaAs二极管(AZ1)(下部二极管);
-其上是交替的序列,即在GaAs二极管(AZ1)上生长的隔离二极管如GaInP隔离二极管(TD)或者AlGaAs隔离二极管(TD1…TDn),其后接着在隔离二极管上生长的GaInP二极管(AZ3)或者AlGaAs二极管(AZ3-AZn);
-其中带式发射区域如此确定,即二极管(AZ1-AZn)的数量、峰的数量以及其宽度构成了在一起的发光区域并且由此产生了发射区域,其通过一个唯一的峰是不能实现的。
6.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:在作用区(AZn)上生长具有作用区(AZn)的pn层相同材料的吸收层(AbsS)。
7.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:所述各作用区(AZ1-AZn)分别设有自己的金属接触(K)用于连接引线。
8.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:混合色LED(26)(褐色)具有下述结构:
-GaA或者Ge基底(SUB);
-在基底上生长的例如由GaInP(也可以是AlGaInP)制成的下部作用区(AZ1);
-在下部作用区上生长的由GaInP或者AlGaInP制成的第一隔离二极管(TD1);
-在隔离二极管上生长的由AlInGaP制成的中间作用区(AZ2);
-第二隔离二极管(TD2);和
-在第二隔离二极管上生长的由AlInGaP制成的上部作用区(AZ3)。
9.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:混合色LED(36)具有下述结构:
-GaAa或者Ge基底(SUB);
-在基底上生长的下部作用区(AZ1),接着是另外两个作用区(AZ2-AZn),其间分别设有隧道二极管(TD1-TDn),其中上部作用区(AZn)具有金属接触(K)用于连接电接头。
10.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:所述设置在作用区(AZ1-AZn)之间的金属接触(K、BK、LK)是粘接、钎焊、挤压、键合或者焊接的。
11.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:所述下部作用区(AZ1)由具有波长大约为620nm的AlInGaP材料制成,中间作用区(AZ2)是波长大约为550nm的AlInGaP半导体材料,并且上部作用区(AZ3)是具有在大约400-450nm范围内的波长的GaInN半导体材料。
12.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:最上方的作用区(AZn)具有接触(BK)如键合接触。
13.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:所述具有作用区(AZ1-AZn、PD1-PDn)的半导体结构(46)是一种混合色传感器,其中所述作用区(PD1-PDn)是光电二极管,并且入射的混合色光线可以选择性地吸收到所属的作用区中,从那里可以选择性地获取产生的电流。
14.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:所述混合色传感器(46)具有下述结构:
-GaAs或者Ge基底(SUB),在其下侧面设置如生长金属接触(K),并在其上侧面设置如生长GaInP或者AlInGaP光电二极管(PD1);
-在所述光电二极管上设置由AlInGaP、AlGaAs或者GaInP材料制成的np隔离二极管(TD1);
-由AlInGaP光电二极管(PD2)构成的第二pn结;
-np隔离二极管(TD2);和
-第三pn结是GaAlN或者AlGaInN光电二极管(PD3)。
15.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:所述第一光电二极管(PD1)处于λ=600nm-680nm的波长范围内,中间光电二极管(PD2)处于λ=550nm的波长范围内,第三光电二极管(PD3)处于λ=400nm-450nm波长范围内。
16.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:每个光线探测光电二极管(PD1-PDn)设有金属接触(K)用于连接电引线。
17.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:所述具有作用区的半导体结构如发光二极管或者光电二极管构成了彩色显示器(80)。
18.按前述权利要求至少一项所述的具有作用区的半导体结构,其特征在于:所述彩色显示器(80)由多个按权利要求1-17中至少一项所述的发光半导体装置(87)构成,其中彩色显示器(80)的象素(82)相应于发光半导体装置,并且其中每个象素(82)和相应的颜色可以选择性地操纵。
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JP2002050790A (ja) * | 2000-08-04 | 2002-02-15 | Hitachi Cable Ltd | 化合物半導体発光ダイオードアレイ |
TW522534B (en) * | 2001-09-11 | 2003-03-01 | Hsiu-Hen Chang | Light source of full color LED using die bonding and packaging technology |
US20060162768A1 (en) * | 2002-05-21 | 2006-07-27 | Wanlass Mark W | Low bandgap, monolithic, multi-bandgap, optoelectronic devices |
US6822991B2 (en) * | 2002-09-30 | 2004-11-23 | Lumileds Lighting U.S., Llc | Light emitting devices including tunnel junctions |
CN1275337C (zh) * | 2003-09-17 | 2006-09-13 | 北京工大智源科技发展有限公司 | 高效高亮度多有源区隧道再生白光发光二极管 |
-
2004
- 2004-01-29 DE DE102004004765A patent/DE102004004765A1/de not_active Withdrawn
-
2005
- 2005-01-26 US US10/586,946 patent/US7692202B2/en not_active Expired - Fee Related
- 2005-01-26 JP JP2006550093A patent/JP4718492B2/ja not_active Expired - Fee Related
- 2005-01-26 WO PCT/EP2005/000759 patent/WO2005073485A2/de active Application Filing
- 2005-01-26 CN CNB2005800036017A patent/CN100468798C/zh not_active Expired - Fee Related
- 2005-01-26 EP EP05701194A patent/EP1709693B1/de not_active Not-in-force
- 2005-01-26 RU RU2006130967/28A patent/RU2328795C2/ru not_active IP Right Cessation
- 2005-01-28 TW TW094102688A patent/TWI340465B/zh not_active IP Right Cessation
-
2006
- 2006-07-26 IL IL177112A patent/IL177112A/en not_active IP Right Cessation
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101969081A (zh) * | 2009-07-27 | 2011-02-09 | 太聚能源股份有限公司 | 光电二极管装置的制造方法 |
CN107863400A (zh) * | 2010-11-19 | 2018-03-30 | 波音公司 | 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结 |
TWI470826B (zh) * | 2012-03-30 | 2015-01-21 | Phostek Inc | 發光二極體裝置 |
CN108028296A (zh) * | 2015-09-11 | 2018-05-11 | 阿聚尔斯佩西太阳能有限责任公司 | 红外led |
CN108028296B (zh) * | 2015-09-11 | 2019-12-10 | 阿聚尔斯佩西太阳能有限责任公司 | 红外led |
CN106206865A (zh) * | 2016-07-15 | 2016-12-07 | 厦门乾照光电股份有限公司 | 一种高压发光二极管及其制作方法 |
CN106206865B (zh) * | 2016-07-15 | 2018-05-22 | 厦门乾照光电股份有限公司 | 一种高压发光二极管及其制作方法 |
CN108346973A (zh) * | 2017-01-24 | 2018-07-31 | 山东华光光电子股份有限公司 | 一种基于AlGaAs/GaInP有源区的795nm量子阱激光器 |
CN108346973B (zh) * | 2017-01-24 | 2019-09-06 | 山东华光光电子股份有限公司 | 一种基于AlGaAs/GaInP有源区的795nm量子阱激光器 |
CN107221571A (zh) * | 2017-04-21 | 2017-09-29 | 清华大学 | 一种半导体光探测器及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2005073485A9 (de) | 2005-11-24 |
JP4718492B2 (ja) | 2011-07-06 |
US20070158659A1 (en) | 2007-07-12 |
JP2007520071A (ja) | 2007-07-19 |
IL177112A (en) | 2013-02-28 |
RU2006130967A (ru) | 2008-03-10 |
RU2328795C2 (ru) | 2008-07-10 |
WO2005073485A2 (de) | 2005-08-11 |
IL177112A0 (en) | 2006-12-10 |
TW200531269A (en) | 2005-09-16 |
DE102004004765A1 (de) | 2005-09-01 |
WO2005073485A8 (de) | 2005-10-27 |
EP1709693B1 (de) | 2012-06-06 |
WO2005073485B1 (de) | 2006-05-11 |
TWI340465B (en) | 2011-04-11 |
WO2005073485A3 (de) | 2006-04-13 |
US7692202B2 (en) | 2010-04-06 |
CN100468798C (zh) | 2009-03-11 |
EP1709693A2 (de) | 2006-10-11 |
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