FR3003402B1 - Dispositif monolithique emetteur de lumiere. - Google Patents

Dispositif monolithique emetteur de lumiere.

Info

Publication number
FR3003402B1
FR3003402B1 FR1352303A FR1352303A FR3003402B1 FR 3003402 B1 FR3003402 B1 FR 3003402B1 FR 1352303 A FR1352303 A FR 1352303A FR 1352303 A FR1352303 A FR 1352303A FR 3003402 B1 FR3003402 B1 FR 3003402B1
Authority
FR
France
Prior art keywords
light emitting
emitting device
monolithic light
monolithic
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1352303A
Other languages
English (en)
Other versions
FR3003402A1 (fr
Inventor
Benjamin Damilano
Hyonju Kim-Chauveau
Eric Frayssinet
Julien Brault
Mierry Philippe De
Sebastien Chenot
Jean Massies
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1352303A priority Critical patent/FR3003402B1/fr
Priority to EP14709339.7A priority patent/EP2973754A1/fr
Priority to CN201480022075.8A priority patent/CN105122475B/zh
Priority to US14/775,592 priority patent/US20160043272A1/en
Priority to JP2015562131A priority patent/JP2016513878A/ja
Priority to PCT/EP2014/054873 priority patent/WO2014140118A1/fr
Publication of FR3003402A1 publication Critical patent/FR3003402A1/fr
Application granted granted Critical
Publication of FR3003402B1 publication Critical patent/FR3003402B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
FR1352303A 2013-03-14 2013-03-14 Dispositif monolithique emetteur de lumiere. Expired - Fee Related FR3003402B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1352303A FR3003402B1 (fr) 2013-03-14 2013-03-14 Dispositif monolithique emetteur de lumiere.
EP14709339.7A EP2973754A1 (fr) 2013-03-14 2014-03-12 Dispositif monolithique emetteur de lumiere
CN201480022075.8A CN105122475B (zh) 2013-03-14 2014-03-12 单片发光器件
US14/775,592 US20160043272A1 (en) 2013-03-14 2014-03-12 Monolithic light-emitting device
JP2015562131A JP2016513878A (ja) 2013-03-14 2014-03-12 モノリシック発光デバイス
PCT/EP2014/054873 WO2014140118A1 (fr) 2013-03-14 2014-03-12 Dispositif monolithique emetteur de lumiere

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1352303A FR3003402B1 (fr) 2013-03-14 2013-03-14 Dispositif monolithique emetteur de lumiere.

Publications (2)

Publication Number Publication Date
FR3003402A1 FR3003402A1 (fr) 2014-09-19
FR3003402B1 true FR3003402B1 (fr) 2016-11-04

Family

ID=48570327

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1352303A Expired - Fee Related FR3003402B1 (fr) 2013-03-14 2013-03-14 Dispositif monolithique emetteur de lumiere.

Country Status (6)

Country Link
US (1) US20160043272A1 (fr)
EP (1) EP2973754A1 (fr)
JP (1) JP2016513878A (fr)
CN (1) CN105122475B (fr)
FR (1) FR3003402B1 (fr)
WO (1) WO2014140118A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
US9590140B2 (en) * 2014-07-03 2017-03-07 Sergey Suchalkin Bi-directional dual-color light emitting device and systems for use thereof
JP2017220586A (ja) * 2016-06-08 2017-12-14 国立大学法人 東京大学 半導体発光素子
FR3066045A1 (fr) * 2017-05-02 2018-11-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode electroluminescente comprenant des couches de conversion en longueur d'onde
FR3089065A1 (fr) * 2018-11-22 2020-05-29 Aledia Diode électroluminescente et procédé de fabrication d’une diode électroluminescente
GB202009952D0 (en) * 2020-06-30 2020-08-12 Ams Int Ag Light source
US20230282766A1 (en) * 2022-03-03 2023-09-07 Seoul Viosys Co., Ltd Monolithic di-chromatic device and light emitting module having the same

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US6445009B1 (en) 2000-08-08 2002-09-03 Centre National De La Recherche Scientifique Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings
KR100422944B1 (ko) * 2001-05-31 2004-03-12 삼성전기주식회사 반도체 엘이디(ｌｅｄ) 소자
JP3791765B2 (ja) 2001-06-08 2006-06-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US7119271B2 (en) * 2001-10-12 2006-10-10 The Boeing Company Wide-bandgap, lattice-mismatched window layer for a solar conversion device
TW546852B (en) * 2002-04-15 2003-08-11 Epistar Corp Mixed-light type LED and the manufacturing method thereof
TW586246B (en) 2002-10-28 2004-05-01 Super Nova Optoelectronics Cor Manufacturing method of white light LED and the light-emitting device thereof
US7170097B2 (en) * 2003-02-14 2007-01-30 Cree, Inc. Inverted light emitting diode on conductive substrate
KR100542720B1 (ko) * 2003-06-03 2006-01-11 삼성전기주식회사 GaN계 접합 구조
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
DE102004052245A1 (de) * 2004-06-30 2006-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und strahlungsemittierendes Halbleiterbauelement mit einem derartigen Halbleiterchip
US7095052B2 (en) * 2004-10-22 2006-08-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Method and structure for improved LED light output
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
JP4653671B2 (ja) * 2005-03-14 2011-03-16 株式会社東芝 発光装置
CN100470864C (zh) * 2005-03-14 2009-03-18 株式会社东芝 具有荧光物质的led
US20070029555A1 (en) * 2005-08-04 2007-02-08 Lester Steven D Edge-emitting LED light source
FR2898434B1 (fr) 2006-03-13 2008-05-23 Centre Nat Rech Scient Diode electroluminescente blanche monolithique
US8629425B2 (en) * 2006-09-08 2014-01-14 Agency For Science, Technology And Research Tunable wavelength light emitting diode
JP2008078297A (ja) * 2006-09-20 2008-04-03 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子
JP5060823B2 (ja) * 2007-04-24 2012-10-31 エルシード株式会社 半導体発光素子
US8058663B2 (en) * 2007-09-26 2011-11-15 Iii-N Technology, Inc. Micro-emitter array based full-color micro-display
KR101441168B1 (ko) * 2007-09-28 2014-09-17 오스람 옵토 세미컨덕터스 게엠베하 복사­방출 반도체 몸체
TWI416757B (zh) * 2008-10-13 2013-11-21 Advanced Optoelectronic Tech 多波長發光二極體及其製造方法
US7851242B2 (en) * 2008-12-17 2010-12-14 Palo Alto Research Center Incorporated Monolithic white and full-color light emitting diodes using optically pumped multiple quantum wells
US20110204376A1 (en) * 2010-02-23 2011-08-25 Applied Materials, Inc. Growth of multi-junction led film stacks with multi-chambered epitaxy system
DE102010002966B4 (de) * 2010-03-17 2020-07-30 Osram Opto Semiconductors Gmbh Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung
EP2619796A2 (fr) * 2010-09-21 2013-07-31 Quantum Electro Opto Systems Sdn. Bhd. Procédés et dispositifs à semi-conducteur à émission laser et électroluminescents
CN102097553A (zh) * 2010-12-03 2011-06-15 北京工业大学 一种基于蓝宝石衬底的单芯片白光发光二极管
US8653550B2 (en) * 2010-12-17 2014-02-18 The United States Of America, As Represented By The Secretary Of The Navy Inverted light emitting diode having plasmonically enhanced emission
US8927958B2 (en) * 2011-07-12 2015-01-06 Epistar Corporation Light-emitting element with multiple light-emitting stacked layers
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TWI466343B (zh) * 2012-01-06 2014-12-21 Phostek Inc 發光二極體裝置
TWI502765B (zh) * 2012-02-24 2015-10-01 Phostek Inc 發光二極體裝置
TW201338200A (zh) * 2012-03-02 2013-09-16 Phostek Inc 發光二極體裝置
US20130270514A1 (en) * 2012-04-16 2013-10-17 Adam William Saxler Low resistance bidirectional junctions in wide bandgap semiconductor materials

Also Published As

Publication number Publication date
JP2016513878A (ja) 2016-05-16
CN105122475A (zh) 2015-12-02
EP2973754A1 (fr) 2016-01-20
WO2014140118A1 (fr) 2014-09-18
FR3003402A1 (fr) 2014-09-19
US20160043272A1 (en) 2016-02-11
CN105122475B (zh) 2018-03-02

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