JP2013543278A - 多接合型太陽電池に関してＩｎＰ格子定数を有する広バンドギャップのタイプＩＩトンネル接合 - Google Patents

多接合型太陽電池に関してＩｎＰ格子定数を有する広バンドギャップのタイプＩＩトンネル接合 Download PDF

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JP2013543278A
JP2013543278A JP2013539840A JP2013539840A JP2013543278A JP 2013543278 A JP2013543278 A JP 2013543278A JP 2013539840 A JP2013539840 A JP 2013539840A JP 2013539840 A JP2013539840 A JP 2013539840A JP 2013543278 A JP2013543278 A JP 2013543278A
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doped
layer
tunnel
tunnel layer
junction
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JP2013543278A5 (enExample
Inventor
ロビン エル． ウー，
ダニエル シー． ロー，
ジョセフ チャールズ ボワヴェール，
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Boeing Co
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Boeing Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
JP2013539840A 2010-11-19 2011-09-23 多接合型太陽電池に関してＩｎＰ格子定数を有する広バンドギャップのタイプＩＩトンネル接合 Pending JP2013543278A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/950,912 2010-11-19
US12/950,912 US11417788B2 (en) 2010-11-19 2010-11-19 Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
PCT/US2011/052898 WO2012067715A2 (en) 2010-11-19 2011-09-23 TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS

Publications (2)

Publication Number Publication Date
JP2013543278A true JP2013543278A (ja) 2013-11-28
JP2013543278A5 JP2013543278A5 (enExample) 2014-11-13

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JP2013539840A Pending JP2013543278A (ja) 2010-11-19 2011-09-23 多接合型太陽電池に関してＩｎＰ格子定数を有する広バンドギャップのタイプＩＩトンネル接合

Country Status (7)

Country Link
US (1) US11417788B2 (enExample)
EP (1) EP2641275B1 (enExample)
JP (1) JP2013543278A (enExample)
KR (1) KR101908742B1 (enExample)
CN (2) CN107863400A (enExample)
CA (1) CA2810895C (enExample)
WO (1) WO2012067715A2 (enExample)

Cited By (6)

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WO2016006247A1 (en) * 2014-07-11 2016-01-14 Ricoh Company, Ltd. Compound-semiconductor photovoltaic cell and manufacturing method of compound-semiconductor photovoltaic cell
WO2016104711A1 (ja) * 2014-12-25 2016-06-30 国立大学法人東京大学 太陽電池
JP2017108106A (ja) * 2015-09-21 2017-06-15 ザ・ボーイング・カンパニーＴｈｅ Ｂｏｅｉｎｇ Ｃｏｍｐａｎｙ 半導体装置用のアンチモン系高バンドギャップトンネル接合
KR101829743B1 (ko) 2017-08-29 2018-02-20 아이피랩 주식회사 밴드 갭 조정을 위한 비대칭 삼차원 격자 구조체
US10490684B2 (en) 2013-07-30 2019-11-26 Ricoh Company, Ltd. Method for producing a compound photovoltaic cell
KR20210136418A (ko) * 2020-05-07 2021-11-17 한양대학교 산학협력단 페로브스카이트/갈륨비소 탠덤형 태양 전지 및 이의 제조방법

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US10283658B2 (en) * 2011-02-09 2019-05-07 The Board Of Regents Of The University Of Oklahoma Interband cascade devices
CN102751367A (zh) * 2012-07-10 2012-10-24 厦门市三安光电科技有限公司 三结太阳能电池及其制备方法
GB2504977B (en) 2012-08-16 2017-10-04 Airbus Defence & Space Gmbh Laser power converter
CN102832274B (zh) * 2012-09-05 2015-01-07 天津三安光电有限公司 倒装太阳能电池及其制备方法
JP6446782B2 (ja) * 2013-03-14 2019-01-09 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
WO2014142340A1 (en) * 2013-03-14 2014-09-18 Ricoh Company, Ltd. Compound semiconductor photovoltaic cell and manufacturing method of the same
JP2015038952A (ja) * 2013-07-16 2015-02-26 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
DE102015006379B4 (de) * 2015-05-18 2022-03-17 Azur Space Solar Power Gmbh Skalierbare Spannungsquelle
US10923610B2 (en) 2015-09-30 2021-02-16 Panasonic Intellectual Property Management Co., Ltd. Solar cell and solar cell module
US10784396B2 (en) * 2015-09-30 2020-09-22 Panasonic Intellectual Property Management Co., Ltd. Solar cell, solar cell module, and production method for solar cell
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare
TWI601298B (zh) * 2017-02-10 2017-10-01 友達光電股份有限公司 光伏裝置
DE102017005950A1 (de) * 2017-06-21 2018-12-27 Azur Space Solar Power Gmbh Solarzellenstapel
MD4554C1 (ro) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS
DE102020001185A1 (de) 2020-02-25 2021-08-26 Azur Space Solar Power Gmbh Stapelförmige monolithische aufrecht-metamorphe lll-V-Mehrfachsolarzelle

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10490684B2 (en) 2013-07-30 2019-11-26 Ricoh Company, Ltd. Method for producing a compound photovoltaic cell
WO2016006247A1 (en) * 2014-07-11 2016-01-14 Ricoh Company, Ltd. Compound-semiconductor photovoltaic cell and manufacturing method of compound-semiconductor photovoltaic cell
US11527666B2 (en) 2014-07-11 2022-12-13 Ricoh Company, Ltd. Compound-semiconductor photovoltaic cell and manufacturing method of compound-semiconductor photovoltaic cell
WO2016104711A1 (ja) * 2014-12-25 2016-06-30 国立大学法人東京大学 太陽電池
JP2016122752A (ja) * 2014-12-25 2016-07-07 国立大学法人 東京大学 太陽電池
JP2017108106A (ja) * 2015-09-21 2017-06-15 ザ・ボーイング・カンパニーＴｈｅ Ｂｏｅｉｎｇ Ｃｏｍｐａｎｙ 半導体装置用のアンチモン系高バンドギャップトンネル接合
KR101829743B1 (ko) 2017-08-29 2018-02-20 아이피랩 주식회사 밴드 갭 조정을 위한 비대칭 삼차원 격자 구조체
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KR20210136418A (ko) * 2020-05-07 2021-11-17 한양대학교 산학협력단 페로브스카이트/갈륨비소 탠덤형 태양 전지 및 이의 제조방법
KR102496459B1 (ko) 2020-05-07 2023-02-03 한양대학교 산학협력단 페로브스카이트/갈륨비소 탠덤형 태양 전지 및 이의 제조방법

Also Published As

Publication number Publication date
US11417788B2 (en) 2022-08-16
EP2641275B1 (en) 2022-07-06
WO2012067715A3 (en) 2012-12-06
KR101908742B1 (ko) 2018-10-16
CN103189998A (zh) 2013-07-03
CN107863400A (zh) 2018-03-30
CA2810895A1 (en) 2012-05-24
CA2810895C (en) 2018-10-16
US20120125392A1 (en) 2012-05-24
KR20140009119A (ko) 2014-01-22
WO2012067715A2 (en) 2012-05-24
EP2641275A2 (en) 2013-09-25

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