JP2017108106A - 半導体装置用のアンチモン系高バンドギャップトンネル接合 - Google Patents
半導体装置用のアンチモン系高バンドギャップトンネル接合 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052787 antimony Inorganic materials 0.000 title 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims abstract description 10
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052714 tellurium Inorganic materials 0.000 claims description 10
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 8
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 6
- 238000004871 chemical beam epitaxy Methods 0.000 claims description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 5
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 150000001463 antimony compounds Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (10)
- n型ドープされたトンネル層(62、162)及び
p型ドープされたトンネル層(60)を含む半導体装置(10、100)用のトンネル接合(26)であって、
前記p型ドープされたトンネル層(60)は、ヒ化アンチモン化アルミニウムガリウム(AlGaAsSb)から構成される、トンネル接合。 - 前記p型ドープされたトンネル層は炭素ドープされている、請求項1に記載のトンネル接合。
- 前記p型ドープされたトンネル層は、約1019/cm3と2×1020/cm3の範囲の濃度の炭素を含む、請求項2に記載のトンネル接合。
- 前記p型ドープされたトンネル層は、約0.7から約1.4eVの範囲のバンドギャップを含む、請求項1または2に記載のトンネル接合。
- 前記n型ドープされたトンネル層は、リン化インジウム(InP)、リン化ヒ化アルミニウムインジウム(AlInPAs)、ヒ化アンチモン化アルミニウム(AlAsSb)、及びAlGaAsSbからなるグループから選択されたn型ドープされた材料である、請求項1、2または4のいずれか一項に記載のトンネル接合。
- 前記n型ドープされたトンネル層は、ケイ素及びテルルからなるグループから選択された材料でドープされている、請求項1、2、4または5のいずれか一項に記載のトンネル接合。
- 前記n型ドープされたトンネル層はヒ化アルミニウムガリウムインジウム(AlGaInAs)から構成されている、請求項1、2、または4から6のいずれか一項に記載のトンネル接合。
- n型ドープされたトンネル層(62、162)を成長させること、及び
p型ドープされたトンネル層(60)を成長させることを含む、光起電装置(10、100)を構築する方法であって、
前記p型ドープされたトンネル層は、ヒ化アンチモン化アルミニウムガリウム(AlGaAsSb)から構成される、方法。 - 前記p型ドープされたトンネル層を炭素でドープすることを含む、請求項8に記載の方法。
- 前記n型ドープされたトンネル層及び前記p型ドープされたトンネル層は、有機金属気相成長エピタキシ(MOVPE)リアクタ、化学ビームエピタキシ(CBE)リアクタ、ハイドライド気相エピタキシ(HVPE)リアクタ、及び原子層堆積(ALD)リアクタからなるグループから選択されたリアクタ内で連続的に成長する、請求項8または9に記載の方法。
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