EP3144979B1 - Antimonide-based high bandgap tunnel junction for semiconductor devices - Google Patents
Antimonide-based high bandgap tunnel junction for semiconductor devices Download PDFInfo
- Publication number
- EP3144979B1 EP3144979B1 EP16178410.3A EP16178410A EP3144979B1 EP 3144979 B1 EP3144979 B1 EP 3144979B1 EP 16178410 A EP16178410 A EP 16178410A EP 3144979 B1 EP3144979 B1 EP 3144979B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- doped
- layer
- arsenide
- emitter
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title claims description 23
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 24
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052714 tellurium Inorganic materials 0.000 claims description 13
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 13
- -1 AlAsSb Chemical compound 0.000 claims description 11
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 6
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 5
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 5
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 5
- 238000004871 chemical beam epitaxy Methods 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 230000005641 tunneling Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Definitions
- the disclosed system and method relate to a semiconductor solar cell device and, more particularly, to a semiconductor device including a tunnel junction that has a n-doped tunnel layer and a p-doped tunnel layer, where the p-doped tunnel layer is constructed of aluminum gallium arsenide antimonide (AlGaAsSb).
- AlGaAsSb aluminum gallium arsenide antimonide
- Wafer bonding technology may be used to monolithically join two materials with different lattice structures together. Wafer bonding technology has great potential. For example, joining gallium arsenide (GaAs) or indium phosphide (InP) based materials to other semiconductor materials may result in the integration of optical, photovoltaic, and electronic devices and enhance the performance of computers, solar cells, light emitting diodes and other electronic devices.
- GaAs gallium arsenide
- InP indium phosphide
- a five-junction (5J) cell which is created by bonding a three-junction (3J) GaAs-based cell with a two-junction (2J) InP-based cell, results in a terrestrial solar cell having an efficiency of about 39% and a space solar cell having an efficiency of about 36%.
- One requirement for an InP-based multi-junction solar cell is a high transparency (which is also referred to as bandgap) tunnel junction.
- the tunnel junctions currently available that are employed in InP-based multi-junction solar cells may sometimes absorb high amounts of light, or have very low peak tunneling currents.
- one type of tunnel junction that is currently available includes a n-doped InP layer and a p-doped InAlGaAs layer.
- this tunnel junction may not always be easy to grow. This is because compounds containing a large amount of indium, such as InAlGaAs, are typically challenging to dope p-type.
- this type of tunnel junction may have a limited peak tunnel current as well.
- a tunnel junction having a p-doped gallium arsenide antimonide (GaAsSb) layer and a n-doped indium gallium arsenide (InGaAs) layer may be used.
- This tunnel junction has a relatively high peak tunnel current, but both layers of this tunnel junction may also absorb light that is intended for active junctions of the solar cell.
- a semiconductor device having a tunnel junction that is relatively easy to dope has a relatively high transparency, and a relatively high peak tunnel current.
- US 2005/253164 A1 states a tunnel junction device with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer of a first semiconductor material doped with carbon.
- the first semiconductor material includes aluminum, gallium, arsenic and antimony.
- An n-type tunnel junction layer of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction.
- TIMMONS M L ET AL "AlGaAsSB/GaAsSb cascade solar cells",15th IEEE Photovoltaic specialists conference, 1981, p1289-1293 there are described AlGaAsSB/GaAsSb cascade solar cells.
- US 5 019 177 A states a single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell.
- the first photoactive subcell is GaInAsP of defined composition.
- the second subcell is InP.
- the two subcells are lattice matched.
- the solar cell can be provided as a two-terminal device or a three-terminal device.
- US 5 679 963 A states the incorporation of a pseudomorphic GaAsSb layer in a tunnel diode structure that affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This disclosure uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.
- CN 102 832 285 A states a three-junction solar battery and a preparation method thereof.
- Indium phosphide InP
- InP Indium phosphide
- a first subcell, a second subcell InP and a third subcell In 1-x Al x As are formed on the InP growth substrate, a stress compensation quantum well is plugged in a base area of the InP subcell, so that the absorptive edge is effectively widened, the lattice matching between batteries can be effectively overcome through a gradient buffering layer, and the dislocation density is reduced.
- a semiconductor solar cell device according to claim 1 is disclosed.
- FIG. 1 is an illustration of an embodiment of the disclosed semiconductor device 10.
- the semiconductor device 10 is an indium phosphide (InP)-based dual-junction solar cell, meaning the semiconductor device 10 includes two photovoltaic cells (which are also referred to as subcells).
- the semiconductor device 10 includes a first photovoltaic cell 22, a second photovoltaic cell 24, and the disclosed tunnel junction 26, which is located between the first photovoltaic cell 22 and the second photovoltaic cell 24.
- the tunnel junction 26 includes a n-doped tunnel layer and a p-doped tunnel layer, where the p-doped tunnel layer is constructed of aluminum gallium arsenide antimonide (AlGaAsSb).
- AlGaAsSb aluminum gallium arsenide antimonide
- the tunnel junction 26 may be referred to as a p-n junction.
- the first photovoltaic cell 22 includes a first emitter and base 20.
- the first emitter and base 20 is a material layer selected from group consisting of indium gallium arsenide phosphide (GaInPAs), aluminum arsenide antimonide (AlAsSb), aluminium gallium arsenide antimonide (AlGaAsSb), aluminum indium arsenide (AlInAs), indium phosphide (InP), aluminum gallium indium arsenide (AlGaInAs), gallium indium arsenide (GaInAs), or gallium arsenide antimonide (GaAsSb).
- the first emitter and base 20 includes a separate emitter layer and base layer (not shown), where the emitter layer is nearest to incident light.
- the first photovoltaic cell 22 includes a bandgap of 1.1 eV. In another embodiment, the first photovoltaic cell 22 may include a bandgap of from about 0.73 to 2.45 eV. In yet another embodiment, the first photovoltaic cell 22 may include a bandgap of from about 1.0 to 1.1 eV and may be included in a three or more junction solar cell.
- the first photovoltaic cell 22 may be sensitive to a first-photoactive-subcell-layer wavelength. As used herein, the term wavelength may mean a single discrete wavelength, or, wavelength may include a range of wavelengths at which the layer material achieves a good light-to-electricity conversion efficiency.
- the first photovoltaic cell 22 may also include a window layer 28.
- the window layer 28 may be disposed on a first side 30 of the first emitter and base 20, which would be positioned nearest to incident light L.
- the relative terms top and bottom are used to indicate the surface nearest to and farthest from the incident light L, respectively.
- upper or above or overlying may refer to a layer closer to the sun, and lower or below or underlying may refer to a layer further from the sun or other source of illumination.
- the window layer 28 may be an InP, AlGaInAs, AlInAs, AlAsSb, AlGaAsSb, or a GalnPAs composition that provides bandgap energy greater than about 1.1 eV.
- the window layer 28 has two functions.
- the first function of the window layer 28 is to reduce minority-carrier recombination (i.e., to passivate) on a front surface 32 of the first photovoltaic cell 22. Additionally, the optical properties of the window material must be such that as much light as possible is transmitted to the first photovoltaic cell 22, and any additional photoactive subcell layers that may be disposed underneath thereof (not shown), where the photogenerated charge carriers may be collected more efficiently. If there is substantial light absorption in the window layer 28, carriers generated in the window layer are less likely to be subsequently collected and hence light absorption in the window degrades overall conversion efficiency.
- the semiconductor device 10 may optionally include an antireflection (AR) layer or coating (not shown) disposed on the front surface 32 of the semiconductor device 10 nearest the incident light L, which is shown impinging from the direction indicated by the arrows.
- the AR coating may be disposed atop the window layer 28.
- the AR coating may reduce surface reflections between the optically transparent media above the semiconductor device 10 (such as air, glass, or polymer) and various semiconductor layers of the semiconductor device 10, thereby enabling more photons to enter the semiconductor device 10.
- the AR coating may be constructed of materials such as, for example, titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), silicon dioxide (SiO 2 ), and magnesium fluoride (MgF 2 ).
- the thickness of the AR coating may vary, but may range between about 0.04 and 0.35 microns. While an AR coating can be applied to the semiconductor device 10, in other embodiments another subcell may be stacked or applied above the semiconductor device 10.
- the first photovoltaic cell 22 may further include a p-doped back surface field (BSF) layer 34 disposed on a bottom surface 36 of the first emitter and base 20.
- the p-doped BSF layer 34 is a p-doped InP BSF layer.
- the p-doped BSF layer 34 may be an AlGaInAs, GaAsSb, AlAsSb, AlGaAsSb, AlInAs, GaInPAs and their alloys layer.
- the BSF layer 34 is lattice-matched to InP.
- the BSF layer 34 may be a coherently strained layer with a thickness below a Matthews-Blakeslee critical thickness.
- the second photovoltaic cell 24 includes a second emitter and base 40.
- the second emitter and base 40 is a GaInPAs layer having an InP lattice constant.
- the second emitter and base 40 is a material layer selected from group consisting of: GaInAs, GaAsSb, AlGaInAs, AlGaAsSb, GaInPAs and their alloys having an InP lattice constant.
- the second emitter and base 40 has a bandgap lower than the bandgap of the first emitter and base 20.
- the second photovoltaic cell 24 has a bandgap of about 0.8 eV. In another embodiment, the second photovoltaic cell 24 may have a bandgap of from about 0.73 to 2.0 eV. In yet another embodiment, the second photovoltaic cell 24 may have a bandgap of from about 0.73 to 0.8 eV and be included in a three or more junction solar cell lattice-matched to InP.
- the second photovoltaic cell may 24 further include a n-doped window layer 42 disposed on a top surface 44 of the second emitter and base 40.
- the characteristics of the n-doped window layer 42 are similar to the window characteristics of the window layer 28.
- the n-doped window 42 may include a n-doping concentration of between about 2 ⁇ 10 18 /cm 3 and 2 ⁇ 10 19 /cm 3 .
- the n-doped window 42 has a n-doping concentration of about 1 ⁇ 10 19 /cm 3 to create a relatively large electric field and to passivate the p-n junction.
- the second photovoltaic cell 24 may further include a second BSF layer 48 below the second emitter and base 40, which is similar to the BSF layer 34.
- the tunnel junction 26 may electrically connect the first photovoltaic cell 22 and the second photovoltaic cell 24 together with one another in electrical series. It should also be appreciated that the tunnel junction 26 is a type-II tunnel junction, which reduces the tunneling energy barrier within the tunnel junction 26. This in turn increases tunneling probability as well as the peak tunneling current of the tunnel junction 26.
- the tunnel junction 26 may include a peak tunneling current of 372 A/cm 2 and a specific resistance of 0.55 m ⁇ -cm 2 .
- both layers of the tunnel junction 26 may be doped at relatively high levels.
- the tunnel junction 26 includes a p-doped tunnel layer 60 and a n-doped tunnel layer 62.
- the p-doped tunnel layer 60 is constructed of aluminum gallium arsenide antimonide (AlGaAsSb).
- AlGaAsSb aluminum gallium arsenide antimonide
- the p-doped tunnel layer 60 may be doped with relatively high levels of carbon (i.e., C-doping or carbon doping). Thatis, the p-doped tunnel layer 60 may include a C-doping concentration ranging from about 10 19 /cm 3 to 2 ⁇ 10 20 /cm 3 .
- carbon doping employs dopants that include relatively low diffusion coefficients, thereby resulting in relatively stable doping profiles and tunnel juction performance.
- an indium-based material such as, for example, an InAlGaAs layer may be challenging to dope because indium precursors may inhibit the incorporation of carbon dopants.
- the p-doped tunnel layer 60 may be lattice-matched with the p-doped InP BSF layer 34.
- the inclusion of antimonide in the p-doped tunnel layer 60 allows for lattice-matching with the p-doped InP BSF layer 34.
- the inclusion of aluminium within the p-doped tunnel layer 60 results in a relatively high bandgap (i.e., transparency) and a low level of light absorption.
- a relatively high bandgap may be any value greater than about 0.73 eV.
- the p-doped tunnel layer 60 may include bandgap ranging from about 0.7 to about 1.4 eV.
- the n-doped tunnel layer 62 is also lattice-matched to InP.
- the n-doped tunnel layer 62 is high bandgap III-V semiconductor having an InP lattice constant and that forms type II band alignment with the p-doped tunnel layer 60.
- the n-doped tunnel layer 62 is a highly n-doped aluminium indium phosphide arsenide (AlInPAs) tunnel layer having a bandgap greater than or equal to 1.35 eV and an InP lattice constant.
- AlInPAs aluminium indium phosphide arsenide
- the n-doped tunnel layer 62 is an InP tunnel layer having a bandgap of 1.35 eV.
- the n-doped tunnel layer 62 may be doped with relatively high levels of silicon or tellurium (i.e., Si or Te-doping). That is, the n-doped tunnel layer 62 may include an Si or Te-doping concentration of at least about 10 19 /cm 3 .
- the p-doped tunnel layer 60 and the n-doped tunnel layer 62 may be grown sequentially in a metalorganic vapor phase epitaxy (MOVPE) reactor.
- MOVPE metalorganic vapor phase epitaxy
- the semiconductor device 10 as well as various device components are grown in a MOVPE reactor.
- the tunnel junction 26 may be grown in a chemical beam epitaxy (CBE), hydride vapor phase epitaxy (HVPE) or atomic layer deposition (ALD) reactor.
- CBE chemical beam epitaxy
- HVPE hydride vapor phase epitaxy
- ALD atomic layer deposition
- the semiconductor device 10 is an upright solar cell configuration where new layers are grown just above a prior layer, and the highest bandgap layer is grown last.
- the semiconductor device 10 may be inverted, where the highest bandgap layer is grown first.
- FIG. 2 is an illustration of an exemplary band offset diagram for the disclosed tunnel junction 26 not forming part of the claimed present invention
- FIG. 3 is the band offset diagram shown in FIG. 2 after thermal equilibrium.
- the band offset diagrams shown in FIGS. 2-3 illustrate a valence band E v and a conduction band E c of both the p-doped tunnel layer 60 as well as the n-doped tunnel layer 62 of the tunnel junction 26, as well as a valence band (VB) edge.
- both the valence band E v and the conduction band E c both bend between the p-doped tunnel layer 60 and the n-doped tunnel layer 62.
- Joining the p-doped tunnel layer 60 and the n-doped tunnel layer 62 creates a staggered gap (type II) heterostructure.
- both the valence band E v and the conduction band E c of the n-doped tunnel layer 62 are lower in energy when compared to the p-doped tunnel layer 60.
- a heterojunction includes two or more semiconductor materials that are grown on one another, and a heterostructure includes the heterojunction. It should be appreciated that a type II heterostructure results in a lower effective energy barrier for tunneling.
- FIG. 4 is a graph illustrating measured characteristics for an exemplary tunnel junction 26 after annealing. Specifically, the tunnel junction 26 was exposed to a thirty minute anneal at temperatures comparable to those experienced for active junction growth. It should be appreciated that there was negligible or no change in performance of the tunnel junction 26 before or after annealing, which is an indication that the dopants used for both the p-doped tunnel layer 60 and the n-doped tunnel layer 62 ( FIG. 1 ) do not readily diffuse. As seen in FIG. 3 , the tunnel junction 26 may include a peak tunneling current of 372 A/cm 2 and a specific resistance of 0.55 m ⁇ -cm 2 . The peak tunneling current is equivalent to a solar cell operating at more than 30,000 suns, which is well in excess of a practical concentration.
- FIG. 5 is an alternative embodiment of a semiconductor device 100, not forming part of the claimed present invention.
- the semiconductor device 100 includes a similar structure as the device shown in FIG. 1 , except that a n-doped tunnel layer 162 is now constructed of AlGaInAs instead of InP.
- a n-doped tunnel layer 162 is now constructed of AlGaInAs instead of InP.
- the n-doped tunnel layer 162 may be doped with relatively high levels of silicon, tellurium, or a combination of both materials. That is, the n-doped tunnel layer 62 may include a doping concentration of at least about 10 19 /cm 3 of silicon, tellurium, or a combination of both materials.
- the n-doped tunnel layer 162 may include a lower bandgap and a higher light absorbance than the n-doped tunnel layer 62 ( FIG. 1 ); however the lower bandgap of the n-doped tunnel layer 162 reduces the energy barrier to tunneling, which in turn exponentially increases the probability of tunneling and tunneling current density.
- the n-doped tunnel layer 162 may include a bandgap of about 0.73 eV.
- light absorption of the n-doped tunnel layer 162 may be mitigated by reducing the thickness of the n-doped tunnel layer, and by decreasing the Al content.
- the thickness of the tunnel junction 26 may be reduced to a minimum of about 10 nm, and the amount of aluminium in the n-doped tunnel layer 162 may range from about zero (i.e., negligible amounts) to about 50%.
- FIG. 6 is an illustration of an exemplary band offset diagram for the disclosed tunnel junction 26 shown in FIG. 5
- FIG. 7 is the band offset diagram shown in FIG. 7 after thermal equilibrium.
- aluminium may be added to the n-doped tunnel layer 162 to create an n+ AlGaInAs layer as well.
- the disclosed tunnel junction includes the p-doped tunnel layer constructed of AlGaAsSb, which demonstrates improved performance characteristics when compared to some other tunnel junctions currently available.
- the disclosed p-doped layer may be easier to grow, since AlGaAsSb may be doped more heavily with carbon.
- compounds containing a high amount of indium are typically challenging to dope.
- a p-doped InAlGaAs layer may only be capable of being doped to the level of about 1018 /cm3 , and even this level of doping may be challenging.
- the disclosed tunnel junction also exhibits relatively high peak tunneling currents.
- the disclosed p-doped tunnel layer constructed of AlGaAsSb also exhibits a higher bandgap (i.e., transparency) than some other types of tunnel junctions currently available.
- high transparency is especially important in applications where the tunnel junction is placed in the upper portion of a solar cell that is located closer to incident light (i.e., the sun).
- the tunnel junction may have the p-doped tunnel layer doped with carbon.
- the tunnel junction may have the p-doped tunnel layer that includes a carbon concentration ranging from about 10 19 /cm 3 to 10 20 /cm 3 .
- the tunnel junction may have the p-doped tunnel layer that includes bandgap ranging from about 0.7 to about 1.4 eV.
- the tunnel junction may have the n-doped tunnel layer that is doped with a material selected from a group consisting of: silicon and tellurium.
- the tunnel may have the n-doped tunnel layer that includes a silicon concentration or a tellurium concentration of at least about 10 19 /cm 3 .
- the tunnel junction may have the n-doped tunnel layer that is doped with at least one of silicon and tellurium.
- a semiconductor solar cell device may have the p-doped tunnel layer that includes a carbon concentration ranging from about 10 19 /cm 3 to 10 20 /cm 3 .
- the semiconductor solar cell device may have the p-doped tunnel layer that includes a bandgap ranging from about 0.7 to about 1.4 eV.
- the semiconductor solar cell device may have the n-doped tunnel layer that is doped with a material selected from a group consisting of: silicon and tellurium.
- the semiconductor solar cell device may have the n-doped tunnel layer that includes a silicon concentration or a tellurium concentration of at least about 10 19 /cm 3 .
- the semiconductor solar cell device may have the n-doped tunnel layer that is doped with at least one of silicon and tellurium.
- a method may comprise doping the p-doped tunnel layer with carbon.
- the method may include that the n-doped tunnel layer and the p-doped tunnel layer are grown sequentially in a reactor selected from the group consisting of a: metalorganic vapor phase epitaxy (MOVPE) reactor, a chemical beam epitaxy (CBE) reactor, a hydride vapor phase epitaxy (HVPE) reactor and an atomic layer deposition (ALD) reactor.
- a reactor selected from the group consisting of a: metalorganic vapor phase epitaxy (MOVPE) reactor, a chemical beam epitaxy (CBE) reactor, a hydride vapor phase epitaxy (HVPE) reactor and an atomic layer deposition (ALD) reactor.
- MOVPE metalorganic vapor phase epitaxy
- CBE chemical beam epitaxy
- HVPE hydride vapor phase epitaxy
- ALD atomic layer deposition
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Photovoltaic Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/860,214 US20170084771A1 (en) | 2015-09-21 | 2015-09-21 | Antimonide-based high bandgap tunnel junction for semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3144979A1 EP3144979A1 (en) | 2017-03-22 |
EP3144979B1 true EP3144979B1 (en) | 2024-05-08 |
Family
ID=56693939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16178410.3A Active EP3144979B1 (en) | 2015-09-21 | 2016-07-07 | Antimonide-based high bandgap tunnel junction for semiconductor devices |
Country Status (6)
Country | Link |
---|---|
US (1) | US20170084771A1 (ja) |
EP (1) | EP3144979B1 (ja) |
JP (1) | JP6920037B2 (ja) |
KR (1) | KR102644800B1 (ja) |
CN (1) | CN106549069B (ja) |
TW (1) | TWI775725B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017005950A1 (de) | 2017-06-21 | 2018-12-27 | Azur Space Solar Power Gmbh | Solarzellenstapel |
FR3083405B1 (fr) * | 2018-06-28 | 2020-07-31 | Airbus Defence & Space Sas | Dispositif de test d'un generateur solaire de satellite |
CN110233187B (zh) * | 2019-06-19 | 2022-01-25 | 扬州乾照光电有限公司 | 晶格失配的多结太阳能电池结构 |
CN114744484B (zh) * | 2022-04-08 | 2024-03-26 | 青岛科技大学 | 一种基于GaAs基高带隙隧道结的大功率激光器结构 |
CN115172500B (zh) * | 2022-07-12 | 2023-08-15 | 中国电子科技集团公司第十八研究所 | 一种激光电池组件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5019177A (en) * | 1989-11-03 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
US5679963A (en) * | 1995-12-05 | 1997-10-21 | Sandia Corporation | Semiconductor tunnel junction with enhancement layer |
US20120125392A1 (en) * | 2010-11-19 | 2012-05-24 | The Boeing Company | TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS |
CN102832285A (zh) * | 2012-09-07 | 2012-12-19 | 天津三安光电有限公司 | 一种三结太阳能电池及其制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5944913A (en) * | 1997-11-26 | 1999-08-31 | Sandia Corporation | High-efficiency solar cell and method for fabrication |
GB2358959B (en) * | 1999-10-07 | 2002-01-16 | Win Semiconductors Corp | Metamorphic heterojunction bipolar transistor having material structure for low cost fabrication on large size gallium arsenide wafers |
US6765238B2 (en) * | 2002-09-12 | 2004-07-20 | Agilent Technologies, Inc. | Material systems for semiconductor tunnel-junction structures |
US6933539B1 (en) * | 2004-05-17 | 2005-08-23 | Corning Incorporated | Tunnel junctions for long-wavelength VCSELs |
US20050253222A1 (en) * | 2004-05-17 | 2005-11-17 | Caneau Catherine G | Semiconductor devices on misoriented substrates |
US20060048811A1 (en) * | 2004-09-09 | 2006-03-09 | Krut Dimitri D | Multijunction laser power converter |
JP5167860B2 (ja) * | 2008-02-26 | 2013-03-21 | 住友電気工業株式会社 | 面発光半導体レーザ及び面発光レーザを作製する方法 |
CN101431117A (zh) * | 2008-11-24 | 2009-05-13 | 北京索拉安吉清洁能源科技有限公司 | 具有掺杂阻挡层的多结太阳电池 |
US10170652B2 (en) * | 2011-03-22 | 2019-01-01 | The Boeing Company | Metamorphic solar cell having improved current generation |
CN102983208B (zh) * | 2011-09-07 | 2017-07-28 | 索埃尔科技公司 | 用于iii‑v化合物半导体电池的栅格设计 |
WO2013074530A2 (en) * | 2011-11-15 | 2013-05-23 | Solar Junction Corporation | High efficiency multijunction solar cells |
CN104364910B (zh) * | 2012-01-31 | 2016-12-21 | 陶氏环球技术有限责任公司 | 制造磷属元素化物吸收体膜和发射体膜之间导带偏移降低的光伏器件的方法 |
JP6550691B2 (ja) * | 2013-07-30 | 2019-07-31 | 株式会社リコー | 化合物半導体太陽電池 |
-
2015
- 2015-09-21 US US14/860,214 patent/US20170084771A1/en not_active Abandoned
-
2016
- 2016-07-07 EP EP16178410.3A patent/EP3144979B1/en active Active
- 2016-07-20 KR KR1020160091755A patent/KR102644800B1/ko active IP Right Grant
- 2016-07-20 TW TW105122866A patent/TWI775725B/zh active
- 2016-08-18 CN CN201610692063.7A patent/CN106549069B/zh active Active
- 2016-09-12 JP JP2016177314A patent/JP6920037B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5019177A (en) * | 1989-11-03 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
US5679963A (en) * | 1995-12-05 | 1997-10-21 | Sandia Corporation | Semiconductor tunnel junction with enhancement layer |
US20120125392A1 (en) * | 2010-11-19 | 2012-05-24 | The Boeing Company | TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS |
CN102832285A (zh) * | 2012-09-07 | 2012-12-19 | 天津三安光电有限公司 | 一种三结太阳能电池及其制备方法 |
Non-Patent Citations (1)
Title |
---|
TIMMONS M L ET AL: "AlGaAsSb/GaAsSb cascade solar cells", FIFTEENTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE,, 1 January 1981 (1981-01-01), pages 1289 - 1293, XP009193261 * |
Also Published As
Publication number | Publication date |
---|---|
US20170084771A1 (en) | 2017-03-23 |
TW201721894A (zh) | 2017-06-16 |
CN106549069A (zh) | 2017-03-29 |
TWI775725B (zh) | 2022-09-01 |
EP3144979A1 (en) | 2017-03-22 |
KR20170034763A (ko) | 2017-03-29 |
JP2017108106A (ja) | 2017-06-15 |
KR102644800B1 (ko) | 2024-03-06 |
CN106549069B (zh) | 2021-08-17 |
JP6920037B2 (ja) | 2021-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2641275B1 (en) | TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS | |
US6150603A (en) | Bilayer passivation structure for photovoltaic cells | |
EP3144979B1 (en) | Antimonide-based high bandgap tunnel junction for semiconductor devices | |
US6586669B2 (en) | Lattice-matched semiconductor materials for use in electronic or optoelectronic devices | |
TWI600173B (zh) | 在中間電池中具有低能隙吸收層之多接面太陽能電池及其製造方法 | |
US20170110607A1 (en) | Lattice matchable alloy for solar cells | |
US20200251604A1 (en) | Distributed bragg reflector structures in multijunction solar cells | |
US11527667B2 (en) | Tunnel junctions for multijunction solar cells | |
US20130228216A1 (en) | Solar cell with gradation in doping in the window layer | |
US20120138130A1 (en) | Tunnel diodes comprising stress-compensated compound semiconductor layers | |
US20190288147A1 (en) | Dilute nitride optical absorption layers having graded doping | |
EP3980586A1 (en) | Dilute nitride optical absorption layers having graded doping | |
US20170365732A1 (en) | Dilute nitride bismide semiconductor alloys | |
Zheng et al. | p-GaSb/n-GaAs heterojunction diodes for TPV and solar cell applications | |
US9040342B2 (en) | Photovoltaic cell and manufacturing method thereof | |
US11588067B2 (en) | Monolithic metamorphic multi-junction solar cell | |
Jackrel et al. | GaInNAsSb solar cells grown by molecular beam epitaxy | |
Klitzke et al. | Sheet Resistance Optimization in (Al) GaInP Solar Cells for Concentrator Quadruple–Junction Solar Cells | |
US20110073887A1 (en) | Optoelectronic devices having a direct-band-gap base and an indirect-band-gap emitter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20160707 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
RBV | Designated contracting states (corrected) |
Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
17Q | First examination report despatched |
Effective date: 20200409 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
RAP3 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: THE BOEING COMPANY |
|
REG | Reference to a national code |
Ref document number: 602016087391 Country of ref document: DE Ref country code: DE Ref legal event code: R079 Free format text: PREVIOUS MAIN CLASS: H01L0031035200 Ipc: H01L0031068700 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTG | Intention to grant announced |
Effective date: 20230623 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 29/885 20060101ALI20230609BHEP Ipc: H01L 31/18 20060101ALI20230609BHEP Ipc: H01L 31/0304 20060101ALI20230609BHEP Ipc: H01L 31/0693 20120101ALI20230609BHEP Ipc: H01L 31/0687 20120101AFI20230609BHEP |
|
GRAJ | Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted |
Free format text: ORIGINAL CODE: EPIDOSDIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
INTC | Intention to grant announced (deleted) | ||
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTG | Intention to grant announced |
Effective date: 20231213 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE PATENT HAS BEEN GRANTED |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
P01 | Opt-out of the competence of the unified patent court (upc) registered |
Effective date: 20240402 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602016087391 Country of ref document: DE |