CA2810895C - Type-ii high bandgap tunnel junctions of inp lattice constant for multijunction solar cells - Google Patents
Type-ii high bandgap tunnel junctions of inp lattice constant for multijunction solar cells Download PDFInfo
- Publication number
- CA2810895C CA2810895C CA2810895A CA2810895A CA2810895C CA 2810895 C CA2810895 C CA 2810895C CA 2810895 A CA2810895 A CA 2810895A CA 2810895 A CA2810895 A CA 2810895A CA 2810895 C CA2810895 C CA 2810895C
- Authority
- CA
- Canada
- Prior art keywords
- doped
- layer
- tunnel
- tunnel layer
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000463 material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000004871 chemical beam epitaxy Methods 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 15
- 230000005641 tunneling Effects 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 241000232997 Anna Species 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/950,912 | 2010-11-19 | ||
| US12/950,912 US11417788B2 (en) | 2010-11-19 | 2010-11-19 | Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells |
| PCT/US2011/052898 WO2012067715A2 (en) | 2010-11-19 | 2011-09-23 | TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2810895A1 CA2810895A1 (en) | 2012-05-24 |
| CA2810895C true CA2810895C (en) | 2018-10-16 |
Family
ID=44721114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2810895A Active CA2810895C (en) | 2010-11-19 | 2011-09-23 | Type-ii high bandgap tunnel junctions of inp lattice constant for multijunction solar cells |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11417788B2 (enExample) |
| EP (1) | EP2641275B1 (enExample) |
| JP (1) | JP2013543278A (enExample) |
| KR (1) | KR101908742B1 (enExample) |
| CN (2) | CN107863400A (enExample) |
| CA (1) | CA2810895C (enExample) |
| WO (1) | WO2012067715A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10283658B2 (en) * | 2011-02-09 | 2019-05-07 | The Board Of Regents Of The University Of Oklahoma | Interband cascade devices |
| CN102751367A (zh) * | 2012-07-10 | 2012-10-24 | 厦门市三安光电科技有限公司 | 三结太阳能电池及其制备方法 |
| GB2504977B (en) | 2012-08-16 | 2017-10-04 | Airbus Defence & Space Gmbh | Laser power converter |
| CN102832274B (zh) * | 2012-09-05 | 2015-01-07 | 天津三安光电有限公司 | 倒装太阳能电池及其制备方法 |
| JP6446782B2 (ja) * | 2013-03-14 | 2019-01-09 | 株式会社リコー | 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法 |
| WO2014142340A1 (en) * | 2013-03-14 | 2014-09-18 | Ricoh Company, Ltd. | Compound semiconductor photovoltaic cell and manufacturing method of the same |
| JP2015038952A (ja) * | 2013-07-16 | 2015-02-26 | 株式会社リコー | 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法 |
| JP6550691B2 (ja) | 2013-07-30 | 2019-07-31 | 株式会社リコー | 化合物半導体太陽電池 |
| JP6582591B2 (ja) * | 2014-07-11 | 2019-10-02 | 株式会社リコー | 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法 |
| JP2016122752A (ja) * | 2014-12-25 | 2016-07-07 | 国立大学法人 東京大学 | 太陽電池 |
| DE102015006379B4 (de) * | 2015-05-18 | 2022-03-17 | Azur Space Solar Power Gmbh | Skalierbare Spannungsquelle |
| US20170084771A1 (en) * | 2015-09-21 | 2017-03-23 | The Boeing Company | Antimonide-based high bandgap tunnel junction for semiconductor devices |
| US10923610B2 (en) | 2015-09-30 | 2021-02-16 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell and solar cell module |
| US10784396B2 (en) * | 2015-09-30 | 2020-09-22 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell, solar cell module, and production method for solar cell |
| MD4510C1 (ro) * | 2016-06-23 | 2018-03-31 | Государственный Университет Молд0 | Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare |
| TWI601298B (zh) * | 2017-02-10 | 2017-10-01 | 友達光電股份有限公司 | 光伏裝置 |
| DE102017005950A1 (de) * | 2017-06-21 | 2018-12-27 | Azur Space Solar Power Gmbh | Solarzellenstapel |
| KR101829743B1 (ko) | 2017-08-29 | 2018-02-20 | 아이피랩 주식회사 | 밴드 갭 조정을 위한 비대칭 삼차원 격자 구조체 |
| MD4554C1 (ro) * | 2017-10-18 | 2018-09-30 | Государственный Университет Молд0 | Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS |
| DE102020001185A1 (de) | 2020-02-25 | 2021-08-26 | Azur Space Solar Power Gmbh | Stapelförmige monolithische aufrecht-metamorphe lll-V-Mehrfachsolarzelle |
| KR102496459B1 (ko) * | 2020-05-07 | 2023-02-03 | 한양대학교 산학협력단 | 페로브스카이트/갈륨비소 탠덤형 태양 전지 및 이의 제조방법 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4667059A (en) * | 1985-10-22 | 1987-05-19 | The United States Of America As Represented By The United States Department Of Energy | Current and lattice matched tandem solar cell |
| US5019177A (en) * | 1989-11-03 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
| US5322572A (en) | 1989-11-03 | 1994-06-21 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
| US5079601A (en) | 1989-12-20 | 1992-01-07 | International Business Machines Corporation | Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions |
| US5407491A (en) | 1993-04-08 | 1995-04-18 | University Of Houston | Tandem solar cell with improved tunnel junction |
| US5679963A (en) * | 1995-12-05 | 1997-10-21 | Sandia Corporation | Semiconductor tunnel junction with enhancement layer |
| US5923663A (en) | 1997-03-24 | 1999-07-13 | Compaq Computer Corporation | Method and apparatus for automatically detecting media connected to a network port |
| US6150603A (en) | 1999-04-23 | 2000-11-21 | Hughes Electronics Corporation | Bilayer passivation structure for photovoltaic cells |
| US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
| US6316715B1 (en) | 2000-03-15 | 2001-11-13 | The Boeing Company | Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material |
| US6586669B2 (en) | 2001-06-06 | 2003-07-01 | The Boeing Company | Lattice-matched semiconductor materials for use in electronic or optoelectronic devices |
| US7122733B2 (en) | 2002-09-06 | 2006-10-17 | The Boeing Company | Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds |
| US6765238B2 (en) * | 2002-09-12 | 2004-07-20 | Agilent Technologies, Inc. | Material systems for semiconductor tunnel-junction structures |
| US7812249B2 (en) | 2003-04-14 | 2010-10-12 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
| DE102004004765A1 (de) * | 2004-01-29 | 2005-09-01 | Rwe Space Solar Power Gmbh | Aktive Zonen aufweisende Halbleiterstruktur |
| US7638792B2 (en) * | 2005-03-23 | 2009-12-29 | Nec Corporation | Tunnel junction light emitting device |
| CN101882656B (zh) * | 2005-10-29 | 2014-03-12 | 三星显示有限公司 | 半导体器件及其制造方法 |
| KR100726324B1 (ko) * | 2005-12-05 | 2007-06-11 | 주식회사 레이칸 | 산화막 구경을 갖는 장파장 표면방출 레이저 소자 및 그제조방법 |
| US8124957B2 (en) | 2006-02-22 | 2012-02-28 | Cree, Inc. | Low resistance tunnel junctions in wide band gap materials and method of making same |
| JP2010538495A (ja) * | 2007-09-07 | 2010-12-09 | アンバーウェーブ・システムズ・コーポレーション | 多接合太陽電池 |
| US9722131B2 (en) * | 2009-03-16 | 2017-08-01 | The Boeing Company | Highly doped layer for tunnel junctions in solar cells |
-
2010
- 2010-11-19 US US12/950,912 patent/US11417788B2/en active Active
-
2011
- 2011-09-23 CN CN201710803810.4A patent/CN107863400A/zh active Pending
- 2011-09-23 WO PCT/US2011/052898 patent/WO2012067715A2/en not_active Ceased
- 2011-09-23 JP JP2013539840A patent/JP2013543278A/ja active Pending
- 2011-09-23 CA CA2810895A patent/CA2810895C/en active Active
- 2011-09-23 EP EP11764066.4A patent/EP2641275B1/en active Active
- 2011-09-23 KR KR1020137006454A patent/KR101908742B1/ko active Active
- 2011-09-23 CN CN2011800501461A patent/CN103189998A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US11417788B2 (en) | 2022-08-16 |
| EP2641275B1 (en) | 2022-07-06 |
| WO2012067715A3 (en) | 2012-12-06 |
| KR101908742B1 (ko) | 2018-10-16 |
| CN103189998A (zh) | 2013-07-03 |
| CN107863400A (zh) | 2018-03-30 |
| CA2810895A1 (en) | 2012-05-24 |
| JP2013543278A (ja) | 2013-11-28 |
| US20120125392A1 (en) | 2012-05-24 |
| KR20140009119A (ko) | 2014-01-22 |
| WO2012067715A2 (en) | 2012-05-24 |
| EP2641275A2 (en) | 2013-09-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20160923 |