JP5794974B2 - 太陽電池内のトンネル接合の高濃度ドープ層 - Google Patents

太陽電池内のトンネル接合の高濃度ドープ層 Download PDF

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Publication number
JP5794974B2
JP5794974B2 JP2012500800A JP2012500800A JP5794974B2 JP 5794974 B2 JP5794974 B2 JP 5794974B2 JP 2012500800 A JP2012500800 A JP 2012500800A JP 2012500800 A JP2012500800 A JP 2012500800A JP 5794974 B2 JP5794974 B2 JP 5794974B2
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layer
delta
dopant
tunnel diode
solar cell
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JP2012521090A (ja
JP2012521090A5 (enExample
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クリストファー エム． フェッツァー，
クリストファー エム． フェッツァー，
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Boeing Co
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Boeing Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
JP2012500800A 2009-03-16 2010-02-04 太陽電池内のトンネル接合の高濃度ドープ層 Active JP5794974B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/404,795 2009-03-16
US12/404,795 US9722131B2 (en) 2009-03-16 2009-03-16 Highly doped layer for tunnel junctions in solar cells
PCT/US2010/023171 WO2010107522A1 (en) 2009-03-16 2010-02-04 Highly doped layer for tunnel junctions in solar cells

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015120850A Division JP6093401B2 (ja) 2009-03-16 2015-06-16 太陽電池内のトンネル接合の高濃度ドープ層

Publications (3)

Publication Number Publication Date
JP2012521090A JP2012521090A (ja) 2012-09-10
JP2012521090A5 JP2012521090A5 (enExample) 2013-03-28
JP5794974B2 true JP5794974B2 (ja) 2015-10-14

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Family Applications (2)

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JP2012500800A Active JP5794974B2 (ja) 2009-03-16 2010-02-04 太陽電池内のトンネル接合の高濃度ドープ層
JP2015120850A Active JP6093401B2 (ja) 2009-03-16 2015-06-16 太陽電池内のトンネル接合の高濃度ドープ層

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JP2015120850A Active JP6093401B2 (ja) 2009-03-16 2015-06-16 太陽電池内のトンネル接合の高濃度ドープ層

Country Status (5)

Country Link
US (2) US9722131B2 (enExample)
EP (1) EP2409334B1 (enExample)
JP (2) JP5794974B2 (enExample)
CN (1) CN102341913B (enExample)
WO (1) WO2010107522A1 (enExample)

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US11417788B2 (en) * 2010-11-19 2022-08-16 The Boeing Company Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
US20120216857A1 (en) * 2011-02-28 2012-08-30 Atomic Energy Council-Institute Of Nuclear Energy Research Solar Cell Assembly with an Improved Photocurrent Collection Efficiency
JP5681607B2 (ja) * 2011-03-28 2015-03-11 株式会社東芝 光電変換素子
EP2721647A2 (en) * 2011-06-15 2014-04-23 3M Innovative Properties Company Solar cell with improved conversion efficiency
CN102244134B (zh) * 2011-08-02 2013-05-15 厦门市三安光电科技有限公司 一种高效四结太阳能电池及其制作方法
WO2013033671A1 (en) * 2011-09-02 2013-03-07 Amberwave, Inc. Solar cell
US9263611B2 (en) * 2011-11-17 2016-02-16 Solar Junction Corporation Method for etching multi-layer epitaxial material
US9178098B2 (en) * 2012-02-29 2015-11-03 The Boeing Company Solar cell with delta doping layer
EP2865016B1 (en) 2012-06-22 2024-06-05 Epiworks, Inc. Manufacturing semiconductor-based multi-junction photovoltaic devices
CN102751389A (zh) * 2012-07-19 2012-10-24 厦门市三安光电科技有限公司 一种高效多结太阳能电池的制备方法
US9997659B2 (en) * 2012-09-14 2018-06-12 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US11495705B2 (en) * 2012-09-14 2022-11-08 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9099595B2 (en) 2012-09-14 2015-08-04 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US10903383B2 (en) 2012-09-14 2021-01-26 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US11646388B2 (en) * 2012-09-14 2023-05-09 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9985160B2 (en) * 2012-09-14 2018-05-29 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
JP6582591B2 (ja) * 2014-07-11 2019-10-02 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
CN104393115B (zh) * 2014-11-18 2016-07-27 上海空间电源研究所 一种多结砷化镓太阳电池一次腐蚀工艺方法
US10910506B1 (en) * 2015-04-09 2021-02-02 Solaero Technologies Corp. Solar cell with gradation in the top window layer
DE102015006379B4 (de) * 2015-05-18 2022-03-17 Azur Space Solar Power Gmbh Skalierbare Spannungsquelle
CN107093647A (zh) * 2017-04-06 2017-08-25 江苏中天科技股份有限公司 激光光伏电池及其制备方法
JP7122119B2 (ja) * 2017-05-25 2022-08-19 昭和電工光半導体株式会社 発光ダイオード
US10439103B2 (en) 2017-05-25 2019-10-08 Showa Denko K. K. Light-emitting diode and method for manufacturing tunnel junction layer
CN108493284B (zh) * 2018-05-03 2020-03-10 扬州乾照光电有限公司 一种晶格失配的多结太阳能电池及其制作方法
CN111261744A (zh) * 2018-11-30 2020-06-09 东泰高科装备科技有限公司 多结太阳能电池及其制备方法
CN111341872B (zh) * 2018-12-18 2022-10-25 紫石能源有限公司 一种砷化镓太阳能电池外延结构及其生长方法
DE102020001185A1 (de) 2020-02-25 2021-08-26 Azur Space Solar Power Gmbh Stapelförmige monolithische aufrecht-metamorphe lll-V-Mehrfachsolarzelle
US12267062B2 (en) 2020-06-17 2025-04-01 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with three-layer electrodes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6437060A (en) 1987-08-03 1989-02-07 Nippon Telegraph & Telephone Semiconductor element
US5342453A (en) * 1992-11-13 1994-08-30 Midwest Research Institute Heterojunction solar cell
JP3250425B2 (ja) * 1995-09-13 2002-01-28 日立電線株式会社 化合物半導体ウエハ及び太陽電池
US6316715B1 (en) * 2000-03-15 2001-11-13 The Boeing Company Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material
WO2002023640A1 (en) 2000-09-14 2002-03-21 Optowell Co., Ltd. Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
JP2003218374A (ja) * 2002-01-23 2003-07-31 Sharp Corp Ｉｉｉ−ｖ族太陽電池
DE102004023856B4 (de) * 2004-05-12 2006-07-13 Rwe Space Solar Power Gmbh Solarzelle mit integrierter Schutzdiode und zusätzlich auf dieser angeordneten Tunneldiode

Also Published As

Publication number Publication date
US10326042B2 (en) 2019-06-18
US9722131B2 (en) 2017-08-01
JP6093401B2 (ja) 2017-03-08
US20170005217A1 (en) 2017-01-05
EP2409334B1 (en) 2020-09-30
US20100229930A1 (en) 2010-09-16
CN102341913B (zh) 2015-08-12
CN102341913A (zh) 2012-02-01
JP2012521090A (ja) 2012-09-10
WO2010107522A1 (en) 2010-09-23
EP2409334A1 (en) 2012-01-25
JP2015201659A (ja) 2015-11-12

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