JP5576273B2 - Iii−v化合物薄膜太陽電池の加工方法 - Google Patents
Iii−v化合物薄膜太陽電池の加工方法 Download PDFInfo
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
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- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- 239000005083 Zinc sulfide Substances 0.000 description 1
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
- H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/544—Solar cells from Group III-V materials
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Description
本出願は、2007年7月3日に出願された米国仮出願第60/958,186号、および2008年4月17日に出願された米国仮出願第61/045,850号の優先権を主張するものであり、両出願ともそれらの全内容が参照により本明細書に組み入れられる。
本明細書に記載した研究の一部は、国立再生可能エネルギー研究所(National Renewable Energy Laboratory (NREL))によって支援された(契約番号NAT-7-77015-05)。米国政府は、本発明について特定の権利を持つ。
本発明は、光発電素子に関する。特に、本発明は、III-V化合物利用型光発電素子、およびIII-V化合物利用型光発電素子の加工におけるエピタキシャル・リフトオフ方法論に関する。
現在、III-V化合物利用型光発電素子は、基板上でエピタキシャル成長し、太陽電池として加工および配置される間もずっと基板に固定されたままである。多くの場合、基板は約150μmの厚みを有し得る。このような厚みを持つ基板を有することは、太陽電池にとって望ましくない因果関係をいくつか招き得る。
以下に、本発明の基本的な諸特徴および種々の態様を列挙する。
[1]
以下を含む、III-V化合物薄膜太陽電池の加工方法:
基板を用意する工程;
該基板上に犠牲層を形成する工程;
該犠牲層上に活性層を形成する工程;
該活性層上にバッキング層を形成する工程;および
III-V化合物薄膜太陽電池を該基板から分離するために、該活性層と該基板との間から該犠牲層を除去する工程。
[2]
前記III-V化合物薄膜太陽電池がフレキシブルである、[1]記載の方法。
[3]
前記基板がIII-V化合物で形成される、[1]記載の方法。
[4]
前記基板が、以前に別のIII-V化合物薄膜太陽電池の加工に使用された、[1]記載の方法。
[5]
前記基板が、ガリウムヒ素(GaAs)およびインジウムリン(InP)の少なくとも1つで形成されている、[3]記載の方法。
[6]
前記犠牲層が、アルミニウムガリウムヒ素(Al X Ga 1-x As)、インジウムアルミニウムヒ素(In x Al 1-x As)、アルミニウムリンアンチモン(AlP x Sb 1-x )、およびアルミニウムヒ素アンチモン(AlAs x Sb 1-x )の少なくとも1つから形成されている、[1]記載の方法。
[7]
前記活性層がIII-V化合物から形成される、[1]記載の方法。
[8]
前記III-V化合物が、ガリウムヒ素(GaAs)、ガリウムインジウムリン(Ga 1-x In x P)、ガリウムインジウムヒ素(Ga 1-x In x As)、インジウムリン(InP)、ガリウムインジウムヒ素リン(Ga 1-x In x As 1-y P y )、およびアルミニウムガリウムインジウムリン((Al x Ga 1-x ) 1-y In y P)のいずれかである、[7]記載の方法。
[9]
(n)層目の活性層を(n-1)層目の活性層の上に形成する工程をさらに含み、該nは活性層の合計数でかつ1よりも大きい整数である、[1]記載の方法。
[10]
前記バッキング層がポリマーで形成される、[1]記載の方法。
[11]
前記バッキング層が金属及びポリマーの複合体で形成される、[1]記載の方法。
[12]
前記活性層と基板との間から犠牲層を除去する工程が:
犠牲層を溶解するために、基板、犠牲層、活性層、およびバッキング層を、酸性エッチング溶液に浸漬する工程
を含む、[1]記載の方法。
[13]
前記活性層に表面メタライゼーションを適用する工程;および
該活性層に反射防止膜を適用する工程
をさらに含む、[1]記載の方法。
[14]
以下を含む、複数のIII-V化合物薄膜太陽電池の形成方法:
基板を用意する工程;
該基板上に犠牲層を形成する工程;
該犠牲層上にウエハサイズのIII-V化合物太陽電池を形成する工程;および
ウエハサイズのIII-V化合物太陽電池をウエハサイズ規模で該基板から分離するために、該ウエハサイズの太陽電池と該基板との間から該犠牲層を除去する工程。
[15]
以下を含む、フレキシブルIII-V化合物太陽電池の形成方法:
以前にIII-V化合物太陽電池を形成するために使用した基板を受ける工程;
該再利用基板上に犠牲層を形成する工程;
該犠牲層上にウエハサイズのフレキシブルIII-V化合物太陽電池を形成する工程;
該太陽電池上にバッキング層を形成する工程;および
ウエハサイズの太陽電池をウエハサイズ規模で該基板から分離するために、該太陽電池と該基板との間から該犠牲層を除去する工程。
[16]
前記フレキシブルIII-V化合物太陽電池が、多接合を有する多接合III-V化合物薄膜太陽電池を含む、[15]記載の方法。
[17]
以下の工程を含む、多接合III-V化合物薄膜太陽電池の形成方法:
第1の基板上に第1のIII-V化合物薄膜太陽電池を形成する工程;
第2の基板上に第2のIII-V化合物薄膜太陽電池を形成する工程;
該第1の基板から該第1のIII-V化合物薄膜太陽電池、または該第2の基板から該第2のIII-V化合物薄膜太陽電池のいずれかを、エピタキシャル・リフトオフによりリフティングする工程;
ウエハ接合型多接合III-V化合物薄膜太陽電池を形成するために、該第1および第2のIII-V化合物薄膜太陽電池をウエハ接合する工程;ならびに
残った基板からウエハ接合型III-V化合物薄膜太陽電池を、エピタキシャル・リフトオフによりリフティングする工程。
[18]
ウエハ接合型多接合III-V化合物薄膜太陽電池の表面上にバッキング層を形成する工程をさらに含む、[17]記載の方法。
[19]
前記バッキング層が、前記ウエハ接合型多接合III-V化合物薄膜太陽電池において最も低いバンドギャップエネルギーレベルを有する接合の表面上に形成される、[18]記載の方法。
[20]
ウエハ接合型多接合III-V化合物薄膜太陽電池の表面をメタライズして、1つ以上のメタライズ導電性パス(metallized conductive paths)を形成する工程をさらに含む、[17]記載の方法。
[21]
ウエハ接合型多接合III-V化合物薄膜太陽電池において最も高いバンドギャップエネルギーを有する接合の表面を、グリッド状のメタライズ導体(a grid of metallized conductors)でメタライズする、[20]記載の方法。
[22]
前記ウエハ接合型多接合III-V化合物薄膜太陽電池の表面上に反射防止膜を形成する工程をさらに含む、[17]記載の方法。
[23]
前記反射防止膜が、ウエハ接合型多接合III-V化合物薄膜太陽電池において最も高いバンドギャップエネルギーを有する接合の表面上に形成される、[22]記載の方法。
本発明は、III-V化合物薄膜太陽電池、およびこのような太陽電池素子を加工するための方法論を開示する。本明細書で教示するIII-V化合物薄膜太陽電池は、加工完了後には基板が無い。加工の間に、III-V化合物薄膜太陽電池を基板から分離させるエピタキシャル・リフトオフ法を使用する。III-V化合物薄膜太陽電池の活性層の表面上に形成されたメタライズ層、ポリマー層、または金属/ポリマー層が、基板の不在下において構造的な支持を提供する。得られるIII-V化合物薄膜太陽電池は、基板に支持された太陽電池素子(すなわち、従来の太陽電池)よりも薄く、軽く、および可撓性があり、III-V化合物薄膜太陽電池のより大きいサイズ、例えばウエハ規模のコンポーネントおよびウエハ規模のリフトオフを可能にする。さらに、光発電素子から分離した後、適切な磨き直し(repolishing)によって表面状態を復元して、別のIII-V化合物薄膜太陽電池の加工のために基板を再利用できる。
Claims (18)
- 以下を含む、1つまたは複数のIII-V化合物薄膜太陽電池の加工方法:
基板を用意する工程;
該基板上に犠牲層を形成する工程;
該犠牲層上に活性層を形成する工程;
該活性層上に、かつ該活性層に直接的に接触させて、金属バッキング層を形成する工程;および
1つまたは複数のIII-V化合物薄膜太陽電池を該基板から分離するために、該活性層と該基板との間から該犠牲層を除去する工程。 - 前記1つまたは複数のIII-V化合物薄膜太陽電池がフレキシブルである、請求項1記載の方法。
- 前記基板がIII-V化合物で形成される、請求項1記載の方法。
- 前記基板が、以前に別のIII-V化合物薄膜太陽電池の加工に使用された、請求項1記載の方法。
- 前記基板が、ガリウムヒ素(GaAs)およびインジウムリン(InP)の少なくとも1つで形成されている、請求項3記載の方法。
- 前記犠牲層が、アルミニウムガリウムヒ素(AlXGa1-xAs)、インジウムアルミニウムヒ素(InxAl1-xAs)、アルミニウムリンアンチモン(AlPxSb1-x)、およびアルミニウムヒ素アンチモン(AlAsxSb1-x)の少なくとも1つから形成されている、請求項1記載の方法。
- 前記活性層がIII-V化合物から形成される、請求項1記載の方法。
- 前記III-V化合物が、ガリウムヒ素(GaAs)、ガリウムインジウムリン(Ga1-xInxP)、ガリウムインジウムヒ素(Ga1-xInxAs)、インジウムリン(InP)、ガリウムインジウムヒ素リン(Ga1-xInxAs1-yPy)、およびアルミニウムガリウムインジウムリン((AlxGa1-x)1-yInyP)のいずれかである、請求項7記載の方法。
- (n)層目の活性層を(n-1)層目の活性層の上に形成する工程をさらに含み、該nは活性層の合計数でかつ1よりも大きい整数である、請求項1記載の方法。
- 前記活性層と基板との間から犠牲層を除去する工程が:
犠牲層を溶解するために、基板、犠牲層、活性層、およびバッキング層を、酸性エッチング流体に浸漬する工程
を含む、請求項1記載の方法。 - 前記活性層に表面メタライゼーションを適用する工程;および
該活性層に反射防止膜を適用する工程
をさらに含む、請求項1記載の方法。 - 前記基板がウエハサイズの基板である、請求項1記載の方法。
- 前記1つまたは複数のIII-V化合物薄膜太陽電池の少なくとも一つが、複数の接合を含む、請求項1記載の方法。
- 前記バッキング層が、活性層と基板との間からの犠牲層の除去の間および後に、前記活性層を支持する、請求項1記載の方法。
- 前記基板が、直径152.4mm(6インチ)までのウエハ基板である、請求項1記載の方法。
- 前記ウエハ基板が、直径101.6mm(4インチ)〜152.4mm(6インチ)を有する、請求項15記載の方法。
- 前記ウエハ基板が、直径152.4mm(6インチ)を有する、請求項16記載の方法。
- 前記バッキング層が、活性層に直接接触する第1の表面、および反対側の、1つまたは複数の太陽電池の第2の最も外側の表面を含む、請求項1記載の方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US9653308B2 (en) | 2015-08-28 | 2017-05-16 | International Business Machines Corporation | Epitaxial lift-off process with guided etching |
US9865469B2 (en) | 2015-08-28 | 2018-01-09 | International Business Machines Corporation | Epitaxial lift-off process with guided etching |
Also Published As
Publication number | Publication date |
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CN101785115B (zh) | 2013-05-08 |
WO2009005825A8 (en) | 2010-02-11 |
WO2009005824A1 (en) | 2009-01-08 |
KR20100049575A (ko) | 2010-05-12 |
EP2168171A4 (en) | 2016-05-18 |
SG182990A1 (en) | 2012-08-30 |
KR20100047246A (ko) | 2010-05-07 |
CN101790794A (zh) | 2010-07-28 |
US11901476B2 (en) | 2024-02-13 |
US10923617B2 (en) | 2021-02-16 |
US7994419B2 (en) | 2011-08-09 |
CA2692124A1 (en) | 2009-01-08 |
EP2168172B1 (en) | 2019-05-22 |
SG182989A1 (en) | 2012-08-30 |
EP2168172A1 (en) | 2010-03-31 |
US20110318866A1 (en) | 2011-12-29 |
WO2009005825A1 (en) | 2009-01-08 |
JP2010532575A (ja) | 2010-10-07 |
US20090044860A1 (en) | 2009-02-19 |
CN101785115A (zh) | 2010-07-21 |
EP2168172A4 (en) | 2016-05-18 |
US20210328093A1 (en) | 2021-10-21 |
JP2010532576A (ja) | 2010-10-07 |
JP5576272B2 (ja) | 2014-08-20 |
EP2168171A1 (en) | 2010-03-31 |
US20090038678A1 (en) | 2009-02-12 |
CA2692126A1 (en) | 2009-01-08 |
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