JP6652111B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- 239000000463 material Substances 0.000 claims description 29
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- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000010408 film Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000011669 selenium Substances 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- 229910052711 selenium Inorganic materials 0.000 description 7
- 229910000831 Steel Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000010959 steel Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
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- 238000000926 separation method Methods 0.000 description 3
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- 238000010030 laminating Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
第一の温度以上の耐熱性のある基板上にて第一の電極層を形成し、該第一の電極層上に前記第一の温度以上の条件下でCIS層を成膜し、該CIS層上に第二の電極層を形成して成る層状部材を準備する工程と、
前記層状部材の温度を前記第一の温度よりも低い第二の温度にする工程と、
固体状態での線膨張係数が前記基板よりも大きい層形成物質の層を前記第二の電極層上に形成する工程と、
前記層状部材を冷却する工程と
を含み、前記層状部材の冷却による前記層形成物質の層の収縮と伴に前記CIS層を前記第一の電極層から剥離させて、薄膜状CIS太陽電池を得る方法によって達成される。
2…ガラス基板
3…裏面電極層(第一の電極層)
4…CIS層
5…バッファ層
6…酸化亜鉛層(窓層)
7…透明電極(第二の電極層)
8…反射防止膜
9…グリッド電極
11…樹脂層(層形成物質)
12…裏面電極層(第三の電極層)
図6(A)、(B)を参照して、量産工程が確立しているCIS太陽電池1は、一般的には、図示の如く薄板状の形態にて製造される。その薄板状形態の断面に於いては、ガラス板や金属板を基板2として、その上に典型的にはモリブデン製の電極層3(第一の電極層)、銅(Cu)、インジウム(In)(或いはガリウムGaを含む)、セレン(Se)を主元素とする化合物半導体層(CIS層)4、バッファ層5(典型的には、CdSから成る層)、窓層6(典型的には、酸化亜鉛から成る層)、透明電極層7(典型的には、酸化インジウム錫や酸化亜鉛系材料などから成る導電性物質から成る層)(第二の電極層)、反射防止膜8が積層され、透明電極層7の一部にグリッド電極9が載せられた構成となっている。そして、太陽光が図中上側(反射防止膜8側)から照射されると、CIS層4に於いて発電され、電圧及び電流が電極層3と透明電極層7とにそれぞれ取り付けた端子から得られることとなる。かかる積層構造のCIS太陽電池1の製造に関しては、CIS層の成膜工程を450℃以上、典型的には、450〜650℃の範囲の温度条件下にて行うと、高品質な、具体的には、変換効率の高い太陽電池が得られることがわかっている。そこで、CIS層4の基板2となる材料としては、上記の如く、450℃以上の高温に耐熱のあるガラス或いは金属が選択されることとなる。従って、「発明の概要」の欄にて述べた如く、従前では、高品質なCIS層そのものは、薄膜状に成膜されるものの、太陽電池としては、硬質の基板上でしか形成することができなかった。
本発明による実施形態に於いては、端的に述べれば、上記の従前のCIS太陽電池の製造方法と同様に、CIS層4の成膜のための基板2として、ガラス板や金属板を用いて、CIS層4の成膜工程を450℃以上の高温条件下にて実行する方法にて、電極層3からCIS層4並びに透明電極層7まで形成し、しかる後、従前であれば、反射防止膜8を適用して更に保護ガラスを貼着する工程を実行するところ、これに替えて、電極層3からCIS層4より上の層を剥離して、薄膜状のCIS太陽電池を形成する工程が実行される。
図3、4を参照して、薄膜状CIS太陽電池の製造の実施形態の於いては、図3(a)、図4(A)にて例示されている如く、ガラス板、金属板等の硬質な固体基板上に、モリブデンから成る裏面電極、CIS発電層(CIS層)〜透明電極までを積層した状態のCIS太陽電池(層状部材)が準備される。基板上のCIS太陽電池は、例えば、150℃に加熱され(図3(b))、硬化前の透明な熱硬化性エポキシ樹脂(透明接着剤)が、例えば、0.5mmの厚みにて塗布され、その上に表面を保護する樹脂フィルム(代替基板)が適用される。この状態で、15分間加熱状態を保持され、かくして樹脂が硬化される(図3(c))。しかる後、この状態のCIS太陽電池全体を室温まで冷却し、所望の大きさに切り欠きを入れると、エポキシ樹脂層の線膨張係数が基板よりも大きいことによって、エポキシ樹脂層に“上に反る応力”が発生しているので、図3(d)、図4(B)に例示されている如く、CIS発電層と裏面電極との間が自然と剥離することとなる。かくして、CIS発電層の剥離面に電極としてカーボンペーストを塗布することにより、図3(e)、図4(C)に例示されている如く、薄膜状CIS太陽電池が得られることとなる。
薄膜状CIS太陽電池を量産する場合、既に述べた如く、ガラス等の硬質な基板2上に裏面電極3〜透明電極層7までを積層する一連の工程は、従来のCIS層4の成膜工程を450℃以上の高温条件下にて実行する方法と同様に実行され、その後、太陽電池の表面に保護するガラス層に替えて、透明樹脂材料などの層を形成する物質の層を適用し、裏面電極3とCIS層4との間を剥離して、薄膜状CIS太陽電池が得られることとなる。
Claims (8)
- CIS太陽電池の製造方法であって、
450℃である第一の温度以上の耐熱性のある基板上にて第一の電極層を形成し、該第一の電極層上に前記第一の温度以上の条件下でCIS層を成膜し、該CIS層上に第二の電極層を形成して成る層状部材を準備する工程と、
前記層状部材の温度を前記第一の温度よりも低い第二の温度にする工程と、
固体状態での線膨張係数が前記基板よりも大きい層形成物質の層を前記第二の電極層上に形成する工程と、
前記層状部材を冷却する工程と
を含み、前記層状部材の冷却による前記層形成物質の層の収縮と伴に前記CIS層を前記第一の電極層から剥離させて、薄膜状CIS太陽電池を得る方法。 - 請求項1の方法であって、前記層形成物質の層を形成する工程が、
前記層形成物質を液体状態にて前記第二の電極層上に層状に塗布する工程と、
前記液体状態の層形成物質を固体化させる工程と、
を含む方法。 - 請求項1又は2の方法であって、前記層状部材を冷却する工程の前又は後に、前記層状部材に於いて所望の寸法の薄膜状CIS太陽電池が得られるように層の延在方向に対して垂直に切り欠きを入れる工程を含む方法。
- 請求項1乃至3のいずれかの方法であって、更に、前記第一の電極層から剥離された前記薄膜状CIS太陽電池の前記CIS層の面に第三の電極層を塗布する工程を含む方法。
- 請求項4の方法であって、前記第三の電極層がカーボンペーストにて形成される方法。
- 請求項1乃至5のいずれかの方法であって、前記基板がガラスである方法。
- 請求項1乃至6のいずれかの方法であって、層形成物質が樹脂材料である方法。
- 請求項7の方法であって、前記樹脂材料がエポキシ樹脂である方法。
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