JP6937050B2 - フレキシブル太陽電池の製造方法 - Google Patents
フレキシブル太陽電池の製造方法 Download PDFInfo
- Publication number
- JP6937050B2 JP6937050B2 JP2019570572A JP2019570572A JP6937050B2 JP 6937050 B2 JP6937050 B2 JP 6937050B2 JP 2019570572 A JP2019570572 A JP 2019570572A JP 2019570572 A JP2019570572 A JP 2019570572A JP 6937050 B2 JP6937050 B2 JP 6937050B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- manufacturing
- substrate
- flexible
- cell unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 82
- 239000000758 substrate Substances 0.000 claims description 139
- 238000000034 method Methods 0.000 claims description 65
- 239000010409 thin film Substances 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000000853 adhesive Substances 0.000 claims description 34
- 230000001070 adhesive effect Effects 0.000 claims description 34
- 230000004888 barrier function Effects 0.000 claims description 30
- 230000007797 corrosion Effects 0.000 claims description 30
- 238000005260 corrosion Methods 0.000 claims description 30
- 238000009713 electroplating Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000010304 firing Methods 0.000 claims description 8
- 239000000741 silica gel Substances 0.000 claims description 8
- 229910002027 silica gel Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 11
- 239000011241 protective layer Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 239000000243 solution Substances 0.000 description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
第1硬質基板1に腐食障壁層11を製造することと、
前記腐食障壁層11に反転された太陽電池ユニット2を製造することと、を含む。
前記太陽電池ユニット2の裏面に裏面シード層31を電気めっきすることと、
前記裏面シード層31に裏面電極3を電気めっきすることと、
前記裏面電極3に金属薄膜を電気めっきしてフレキシブル基板4を形成することと、を含む。
湿式剥離工程を利用し前記腐食障壁層11における第1硬質基板1を腐食し除去した後、前記フレキシブル太陽電池の製造方法は、さらに湿式剥離工程を利用し前記太陽電池ユニット2における腐食障壁層11を腐食し除去することを含む。
前記太陽電池ユニット2の正面に正面シード層71を電気めっきすることと、
前記正面シード層71に正面電極7を電気めっきすることと、を含む。
Claims (7)
- フレキシブル太陽電池の製造方法であって、
第1硬質基板に腐食障壁層を製造することと、
前記腐食障壁層に反転された太陽電池ユニットを製造することと、
前記太陽電池ユニットの裏面に裏面電極を製造することと、
前記裏面電極に金属薄膜を電気めっきしてフレキシブル基板を製造することと、
前記フレキシブル基板を接着剤が塗布された第2硬質基板に接着し、焼成により前記接着剤を硬化して、前記フレキシブル基板を第2硬質基板に接着することと、
前記腐食障壁層を前記太陽電池ユニットから分離することと、
前記太陽電池ユニットの正面に正面電極を製造することと、
前記第2硬質基板と前記フレキシブル基板を剥離することと、を含み、
前記接着剤は剥離可能なシリカゲルであり、前記剥離可能なシリカゲルは前記第2硬質基板に対する接着強度が前記フレキシブル基板に対する接着強度より大きい、
ことを特徴とするフレキシブル太陽電池の製造方法。 - 前記太陽電池ユニットの裏面に裏面電極を製造する方法は、
前記太陽電池ユニットの裏面に裏面シード層を電気めっきすることと、
前記裏面シード層に裏面電極を電気めっきすることと、を含む、
ことを特徴とする請求項1に記載のフレキシブル太陽電池の製造方法。 - 前記金属薄膜は銅薄膜であり、前記第2硬質基板はホウケイ酸ガラスである、
ことを特徴とする請求項2に記載のフレキシブル太陽電池の製造方法。 - 前記腐食障壁層を前記太陽電池ユニットから分離する方法は、湿式剥離工程を利用し前記腐食障壁層における第1硬質基板を腐食し除去することを含み、
湿式剥離工程を利用し前記腐食障壁層における第1硬質基板を腐食し除去した後、前記フレキシブル太陽電池の製造方法は、さらに、湿式剥離工程を利用し前記太陽電池ユニットにおける腐食障壁層を除去することを含む、
ことを特徴とする請求項1に記載のフレキシブル太陽電池の製造方法。 - 前記太陽電池ユニットの正面に正面電極を製造する方法は、
前記太陽電池ユニットの正面に正面シード層を電気めっきすることと、
前記正面シード層に正面電極を電気めっきすることと、を含む、
ことを特徴とする請求項1に記載のフレキシブル太陽電池の製造方法。 - 前記太陽電池ユニットの正面に正面電極を製造した後、前記フレキシブル太陽電池の製造方法は、さらに、前記太陽電池ユニットの正面電極及び前記太陽電池ユニットの正面の前記正面電極により覆われない領域に反射防止層を製造することを含む、
ことを特徴とする請求項1に記載のフレキシブル太陽電池の製造方法。 - 前記太陽電池ユニットは多接合太陽電池である、
ことを特徴とする請求項1に記載のフレキシブル太陽電池の製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810904936.5A CN110828581A (zh) | 2018-08-09 | 2018-08-09 | 一种柔性太阳电池及其制作方法 |
CN201810904936.5 | 2018-08-09 | ||
CN201910132351.0A CN111613693A (zh) | 2019-02-22 | 2019-02-22 | 柔性太阳能电池及其制作方法 |
CN201910132351.0 | 2019-02-22 | ||
PCT/CN2019/078134 WO2020029581A1 (zh) | 2018-08-09 | 2019-03-14 | 柔性太阳能电池及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020537815A JP2020537815A (ja) | 2020-12-24 |
JP6937050B2 true JP6937050B2 (ja) | 2021-09-22 |
Family
ID=69414020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019570572A Active JP6937050B2 (ja) | 2018-08-09 | 2019-03-14 | フレキシブル太陽電池の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20210066531A1 (ja) |
EP (1) | EP3836233A4 (ja) |
JP (1) | JP6937050B2 (ja) |
WO (1) | WO2020029581A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113380913B (zh) * | 2021-05-13 | 2024-01-26 | 西安埃德迈光电科技有限公司 | 一种超柔薄膜电池组件结构及制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7488890B2 (en) * | 2003-04-21 | 2009-02-10 | Sharp Kabushiki Kaisha | Compound solar battery and manufacturing method thereof |
CA2692126A1 (en) * | 2007-07-03 | 2009-01-08 | Microlink Devices, Inc. | Methods for fabricating thin film iii-v compound solar cell |
US9178105B2 (en) * | 2010-09-21 | 2015-11-03 | Amberwave Inc. | Flexible monocrystalline thin silicon cell |
CN101964398A (zh) * | 2010-10-11 | 2011-02-02 | 福建钧石能源有限公司 | 柔性薄膜太阳能电池及其制造方法 |
JP2014123712A (ja) * | 2012-11-26 | 2014-07-03 | Ricoh Co Ltd | 太陽電池の製造方法 |
CN103390674B (zh) * | 2013-07-17 | 2015-09-30 | 深圳先进技术研究院 | Czts柔性太阳电池及其制备方法 |
CN105470317B (zh) * | 2014-09-12 | 2018-02-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种柔性衬底GaAs薄膜电池及其制备方法 |
CN104393098B (zh) * | 2014-10-09 | 2016-05-11 | 苏州强明光电有限公司 | 基于半导体量子点的多结太阳能电池及其制作方法 |
CN108140679A (zh) * | 2015-09-28 | 2018-06-08 | 夏普株式会社 | 薄膜化合物太阳电池、薄膜化合物太阳电池的制造方法、薄膜化合物太阳电池阵列及薄膜化合物太阳电池阵列的制造方法 |
KR101783971B1 (ko) * | 2016-11-22 | 2017-10-10 | 한국표준과학연구원 | 금속 디스크 어레이를 구비한 적층형 태양전지 |
-
2019
- 2019-03-14 JP JP2019570572A patent/JP6937050B2/ja active Active
- 2019-03-14 US US16/631,376 patent/US20210066531A1/en not_active Abandoned
- 2019-03-14 EP EP19828181.8A patent/EP3836233A4/en active Pending
- 2019-03-14 WO PCT/CN2019/078134 patent/WO2020029581A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20210066531A1 (en) | 2021-03-04 |
WO2020029581A1 (zh) | 2020-02-13 |
EP3836233A1 (en) | 2021-06-16 |
EP3836233A4 (en) | 2022-04-06 |
JP2020537815A (ja) | 2020-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5576272B2 (ja) | Iii−v化合物薄膜太陽電池 | |
TWI511317B (zh) | 安裝在撓性膜上的倒置變質太陽能電池 | |
TWI660520B (zh) | 經由印刷方法整合磊晶剝離太陽能電池與小型拋物線集光器陣列 | |
JP6199323B2 (ja) | 効率的化合物の半導体太陽電池のための構造及び方法 | |
US5650363A (en) | Method for processing thin wafers and solar cells of crystalline silicon | |
JP5414010B2 (ja) | 多接合型化合物太陽電池セル、多接合型化合物太陽電池およびその製造方法 | |
US8518724B2 (en) | Method to form a device by constructing a support element on a thin semiconductor lamina | |
US10593824B2 (en) | Ultra-thin flexible rear-contact Si solar cells and methods for manufacturing the same | |
US8101451B1 (en) | Method to form a device including an annealed lamina and having amorphous silicon on opposing faces | |
US20090217976A1 (en) | Solar cell with integrated thermally conductive and electrically insulating substrate | |
CN110120438B (zh) | 基于金属柔性基底的太阳能电池的制备方法 | |
CN111613693A (zh) | 柔性太阳能电池及其制作方法 | |
JP6937050B2 (ja) | フレキシブル太陽電池の製造方法 | |
US8916954B2 (en) | Multi-layer metal support | |
CN110828581A (zh) | 一种柔性太阳电池及其制作方法 | |
CN109768111A (zh) | 一种GaAs纳米柱-石墨烯肖特基结太阳能电池及其制备方法 | |
TWI685124B (zh) | 整合非追蹤小型混合拋物線集中器之磊晶剝離加工GaAs薄膜太陽能電池 | |
JP2020181974A (ja) | 溶融シリカカバーガラスを備える多接合型太陽電池 | |
US20130200497A1 (en) | Multi-layer metal support | |
CN104835882B (zh) | 一种倒装高效柔性砷化镓太阳能电池及其制备方法 | |
CN114447155B (zh) | 柔性太阳能电池及半导体器件的栅电极的制作方法 | |
JPS5839074A (ja) | 太陽電池の製造方法 | |
JP2017531314A (ja) | 半導体構造物、その製造方法及び使用 | |
JP2014501456A (ja) | 薄い半導体膜上に支持要素を構築することによって装置を形成するための方法 | |
RU2449421C2 (ru) | Подложка для каскадных солнечных элементов |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210126 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210409 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210803 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210823 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6937050 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |