EP2168171A4 - III-V COMPOUND SOLAR CELL IN THIN LAYER - Google Patents
III-V COMPOUND SOLAR CELL IN THIN LAYERInfo
- Publication number
- EP2168171A4 EP2168171A4 EP08779967.2A EP08779967A EP2168171A4 EP 2168171 A4 EP2168171 A4 EP 2168171A4 EP 08779967 A EP08779967 A EP 08779967A EP 2168171 A4 EP2168171 A4 EP 2168171A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- thin film
- solar cell
- compound solar
- film iii
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
- H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US95818607P | 2007-07-03 | 2007-07-03 | |
US4585008P | 2008-04-17 | 2008-04-17 | |
PCT/US2008/008262 WO2009005824A1 (en) | 2007-07-03 | 2008-07-03 | Thin film iii-v compound solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2168171A1 EP2168171A1 (en) | 2010-03-31 |
EP2168171A4 true EP2168171A4 (en) | 2016-05-18 |
Family
ID=40226434
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08779967.2A Withdrawn EP2168171A4 (en) | 2007-07-03 | 2008-07-03 | III-V COMPOUND SOLAR CELL IN THIN LAYER |
EP08779968.0A Active EP2168172B1 (en) | 2007-07-03 | 2008-07-03 | Methods for fabricating thin film iii-v compound solar cell |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08779968.0A Active EP2168172B1 (en) | 2007-07-03 | 2008-07-03 | Methods for fabricating thin film iii-v compound solar cell |
Country Status (8)
Country | Link |
---|---|
US (4) | US20090038678A1 (ja) |
EP (2) | EP2168171A4 (ja) |
JP (2) | JP5576272B2 (ja) |
KR (2) | KR20100049575A (ja) |
CN (2) | CN101790794A (ja) |
CA (2) | CA2692126A1 (ja) |
SG (2) | SG182990A1 (ja) |
WO (2) | WO2009005824A1 (ja) |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2894990B1 (fr) | 2005-12-21 | 2008-02-22 | Soitec Silicon On Insulator | Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede |
US9634172B1 (en) | 2007-09-24 | 2017-04-25 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with multiple metamorphic layers |
US10381501B2 (en) | 2006-06-02 | 2019-08-13 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with multiple metamorphic layers |
US9117966B2 (en) | 2007-09-24 | 2015-08-25 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell |
US20100203730A1 (en) * | 2009-02-09 | 2010-08-12 | Emcore Solar Power, Inc. | Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells |
US20100047959A1 (en) * | 2006-08-07 | 2010-02-25 | Emcore Solar Power, Inc. | Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells |
CA2692126A1 (en) * | 2007-07-03 | 2009-01-08 | Microlink Devices, Inc. | Methods for fabricating thin film iii-v compound solar cell |
US10381505B2 (en) | 2007-09-24 | 2019-08-13 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cells including metamorphic layers |
US8236600B2 (en) * | 2008-11-10 | 2012-08-07 | Emcore Solar Power, Inc. | Joining method for preparing an inverted metamorphic multijunction solar cell |
EP2356689A4 (en) | 2008-11-26 | 2013-11-20 | Microlink Devices Inc | SOLAR CELL WITH LOWER SURFACE ORIFICE TO ENGAGE WITH THE TRANSMITTING LAYER |
US8778199B2 (en) | 2009-02-09 | 2014-07-15 | Emoore Solar Power, Inc. | Epitaxial lift off in inverted metamorphic multijunction solar cells |
GB2467934B (en) * | 2009-02-19 | 2013-10-30 | Iqe Silicon Compounds Ltd | Photovoltaic cell |
GB2467935B (en) | 2009-02-19 | 2013-10-30 | Iqe Silicon Compounds Ltd | Formation of thin layers of GaAs and germanium materials |
US20100248413A1 (en) * | 2009-03-31 | 2010-09-30 | David Strand | Monolithic Integration of Photovoltaic Cells |
US20100310775A1 (en) * | 2009-06-09 | 2010-12-09 | International Business Machines Corporation | Spalling for a Semiconductor Substrate |
US8802477B2 (en) * | 2009-06-09 | 2014-08-12 | International Business Machines Corporation | Heterojunction III-V photovoltaic cell fabrication |
US8633097B2 (en) | 2009-06-09 | 2014-01-21 | International Business Machines Corporation | Single-junction photovoltaic cell |
US20110048517A1 (en) * | 2009-06-09 | 2011-03-03 | International Business Machines Corporation | Multijunction Photovoltaic Cell Fabrication |
US8703521B2 (en) * | 2009-06-09 | 2014-04-22 | International Business Machines Corporation | Multijunction photovoltaic cell fabrication |
JP5619901B2 (ja) * | 2009-09-10 | 2014-11-05 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | エピタキシャルリフトオフを用いたフレキシブル光起電力デバイスの製造方法、およびエピタキシャル成長に用いる成長用基板の完全性を保持する方法 |
US9559229B2 (en) * | 2009-12-31 | 2017-01-31 | Epistar Corporation | Multi-junction solar cell |
KR101108245B1 (ko) * | 2010-03-24 | 2012-01-31 | 광주과학기술원 | 화합물 반도체 태양 전지의 제조 방법 |
WO2011132396A1 (en) | 2010-04-20 | 2011-10-27 | Panasonic Corporation | A method for joining a film onto a substrate |
JP6076903B2 (ja) * | 2010-08-06 | 2017-02-08 | セムプリウス インコーポレイテッド | 印刷可能な化合物半導体デバイスをリリースするための材料及びプロセス |
CN102376788A (zh) * | 2010-08-11 | 2012-03-14 | 朱忻 | 用于太阳能电池的多层薄膜及其制备方法和用途 |
WO2012021880A2 (en) * | 2010-08-13 | 2012-02-16 | Solexel, Inc. | Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template |
KR101163154B1 (ko) * | 2010-09-30 | 2012-07-06 | 광주과학기술원 | 고효율 연성 캘코파이럿계 화합물 반도체 박막태양전지의 제조 방법 |
US20120091474A1 (en) * | 2010-10-13 | 2012-04-19 | NuPGA Corporation | Novel semiconductor and optoelectronic devices |
US9425249B2 (en) | 2010-12-01 | 2016-08-23 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
WO2012074523A1 (en) | 2010-12-01 | 2012-06-07 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
CN102655177A (zh) * | 2011-03-02 | 2012-09-05 | 亿芳能源科技股份有限公司 | Iii-v族太阳能电池封装件及其制法 |
EP2515349A1 (en) * | 2011-04-18 | 2012-10-24 | Everphoton Energy Corporation | III-V solar cell package and method of fabricating the same |
US9818901B2 (en) * | 2011-05-13 | 2017-11-14 | International Business Machines Corporation | Wafer bonded solar cells and fabrication methods |
US9040392B2 (en) | 2011-06-15 | 2015-05-26 | International Business Machines Corporation | Method for controlled removal of a semiconductor device layer from a base substrate |
CA2840517A1 (en) * | 2011-06-29 | 2013-06-27 | Stephen R. Forrest | Sacrificial etch protection layers for reuse of wafers after epitaxial lift off |
JP6312257B2 (ja) * | 2011-07-06 | 2018-04-18 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | エピタキシャルリフトオフを使用した組み込まれた太陽光集光と冷間圧接接合された半導体太陽電池 |
TWI585990B (zh) * | 2011-08-26 | 2017-06-01 | 行政院原子能委員會核能研究所 | 用於光電元件之基板的剝離結構 |
CN102299210A (zh) * | 2011-09-14 | 2011-12-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | 倒装薄膜太阳能电池的制作方法 |
US8541315B2 (en) | 2011-09-19 | 2013-09-24 | International Business Machines Corporation | High throughput epitaxial lift off for flexible electronics |
CN103035775A (zh) * | 2011-09-29 | 2013-04-10 | 北儒精密股份有限公司 | 太阳能电池组及其制造方法 |
US8492187B2 (en) | 2011-09-29 | 2013-07-23 | International Business Machines Corporation | High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate |
EP2761668A2 (en) * | 2011-09-30 | 2014-08-06 | Microlink Devices, Inc. | Thin film inp-based solar cells using epitaxial lift-off |
FR2981195A1 (fr) | 2011-10-11 | 2013-04-12 | Soitec Silicon On Insulator | Multi-jonctions dans un dispositif semi-conducteur forme par differentes techniques de depot |
WO2013123459A2 (en) | 2012-02-15 | 2013-08-22 | Microlink Devices, Inc. | Integration of high-efficiency, lightweight solar sheets onto unmanned aerial vehicle for increased endurance |
KR101309924B1 (ko) | 2012-03-21 | 2013-09-17 | 주식회사 포스코 | 광소자 제조방법 |
EP2645429A1 (en) * | 2012-03-28 | 2013-10-02 | Soitec | Manufacture of multijunction solar cell devices |
EP2645430A1 (en) * | 2012-03-28 | 2013-10-02 | Soitec | Manufacture of multijunction solar cell devices |
JP2015133339A (ja) * | 2012-04-25 | 2015-07-23 | パナソニック株式会社 | 光電変換装置 |
US8569097B1 (en) | 2012-07-06 | 2013-10-29 | International Business Machines Corporation | Flexible III-V solar cell structure |
US8916450B2 (en) | 2012-08-02 | 2014-12-23 | International Business Machines Corporation | Method for improving quality of spalled material layers |
JP2014060382A (ja) | 2012-08-20 | 2014-04-03 | Toshiba Corp | 光電変換素子、光電変換システムおよび光電変換素子の製造方法 |
US8748324B1 (en) | 2013-02-26 | 2014-06-10 | The Boeing Company | Systems and methods for separating components of a multilayer stack of electronic components |
CN104009047B (zh) * | 2013-02-27 | 2017-10-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种倒装结构的激光光伏电池及其制作方法 |
KR101455724B1 (ko) * | 2013-04-24 | 2014-11-03 | 한국광기술원 | 실리콘 기판을 재활용한 고효율 iii-v 태양전지와 광전소자 및 그의 제조방법 |
KR101455723B1 (ko) * | 2013-04-24 | 2014-11-04 | 한국광기술원 | 실리콘기판을 재활용한 고효율 iii-v 나노 막대 태양전지 및 그의 제조방법 |
KR101926621B1 (ko) * | 2013-05-20 | 2018-12-07 | 엘지전자 주식회사 | 화합물 반도체 태양전지의 제조 방법 |
US9831363B2 (en) * | 2014-06-19 | 2017-11-28 | John Farah | Laser epitaxial lift-off of high efficiency solar cell |
US9340895B1 (en) | 2013-06-27 | 2016-05-17 | The Boeing Company | Systems and methods for separating components of a multilayer stack of electronic components |
CN103489958B (zh) * | 2013-08-27 | 2015-09-02 | 湖南红太阳光电科技有限公司 | 一种柔性硅基砷化镓电池的制备方法 |
CN103594539B (zh) * | 2013-10-22 | 2016-02-10 | 扬州乾照光电有限公司 | 一种柔性多结GaAs太阳电池及其制备方法 |
US10141465B2 (en) | 2014-04-04 | 2018-11-27 | The Regents Of The University Of Michigan | Epitaxial lift-off processed GaAs thin-film solar cells integrated with non-tracking mini-compound parabolic concentrators |
CN104538284A (zh) * | 2014-12-30 | 2015-04-22 | 西安交通大学 | 一种在硅片上集成化合物半导体器件的工艺 |
US10340187B2 (en) | 2015-03-18 | 2019-07-02 | The Regents Of The University Of Michigan | Strain relief epitaxial lift-off via pre-patterned mesas |
KR101743017B1 (ko) | 2015-05-19 | 2017-06-05 | 한국과학기술연구원 | 고속 에피택셜 리프트오프와 iii-v족 직접 성장용 템플릿을 이용한 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자 |
KR101633871B1 (ko) * | 2015-06-08 | 2016-06-28 | 한국광기술원 | 3-5족 화합물 반도체 제조방법 |
US9653308B2 (en) | 2015-08-28 | 2017-05-16 | International Business Machines Corporation | Epitaxial lift-off process with guided etching |
CN105470115B (zh) * | 2015-12-08 | 2018-10-23 | 中国电子科技集团公司第十八研究所 | 一种将砷化镓外延层转移至金属柔性衬底的方法 |
EP3446340B1 (en) * | 2016-04-18 | 2023-11-15 | Microlink Devices, Inc. | Integration of high-efficiency, lightweight solar sheets onto unmanned aerial vehicle for increased endurance |
US10141469B1 (en) | 2016-10-17 | 2018-11-27 | Stc.Unm | Radially stacked solar cells based on 2D atomic crystals and methods for their production |
KR101783971B1 (ko) * | 2016-11-22 | 2017-10-10 | 한국표준과학연구원 | 금속 디스크 어레이를 구비한 적층형 태양전지 |
US11398575B2 (en) * | 2017-04-07 | 2022-07-26 | Microlink Devices, Inc. | Back-contact thin film semiconductor device structures and methods for their production |
JP6652111B2 (ja) | 2017-07-18 | 2020-02-19 | トヨタ自動車株式会社 | 太陽電池の製造方法 |
KR101957801B1 (ko) * | 2017-11-28 | 2019-07-04 | 한국표준과학연구원 | 플렉서블 이중접합 태양전지 |
US20190181289A1 (en) | 2017-12-11 | 2019-06-13 | Solaero Technologies Corp. | Multijunction solar cells |
JP6937050B2 (ja) * | 2018-08-09 | 2021-09-22 | 中国科学院蘇州納米技術与納米▲ファン▼生研究所 | フレキシブル太陽電池の製造方法 |
KR20200021772A (ko) * | 2018-08-21 | 2020-03-02 | 엘지전자 주식회사 | 화합물 반도체 태양전지 및 이의 제조 방법 |
US10717610B1 (en) * | 2019-02-06 | 2020-07-21 | National Presort, Inc. | Mechanically locking diverter |
KR102193767B1 (ko) * | 2019-07-23 | 2020-12-21 | 고려대학교 산학협력단 | 다층 페로브스카이트 구조체의 제조방법과, 이로부터 제조된 다층 페로브스카이트 구조체 및 태양전지 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040206389A1 (en) * | 2003-04-21 | 2004-10-21 | Sharp Kabushiki Kaisha | Compound solar battery and manufacturing method thereof |
US20060144435A1 (en) * | 2002-05-21 | 2006-07-06 | Wanlass Mark W | High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters |
Family Cites Families (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0193830A3 (en) * | 1980-04-10 | 1986-10-01 | Massachusetts Institute Of Technology | Solar cell device incorporating plural constituent solar cells |
US4661712A (en) * | 1985-05-28 | 1987-04-28 | Varian Associates, Inc. | Apparatus for scanning a high current ion beam with a constant angle of incidence |
JPS63107073A (ja) * | 1986-06-26 | 1988-05-12 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池の製造法 |
JP2680582B2 (ja) * | 1987-10-19 | 1997-11-19 | 三洋電機株式会社 | 光起電力装置の製造方法 |
US4846931A (en) * | 1988-03-29 | 1989-07-11 | Bell Communications Research, Inc. | Method for lifting-off epitaxial films |
JPH02291135A (ja) | 1989-05-01 | 1990-11-30 | Sumitomo Electric Ind Ltd | ヘテロ接合バイポーラトランジスタ |
JPH05109753A (ja) * | 1991-08-16 | 1993-04-30 | Toshiba Corp | バイポーラトランジスタ |
FR2690278A1 (fr) * | 1992-04-15 | 1993-10-22 | Picogiga Sa | Composant photovoltaïque multispectral à empilement de cellules, et procédé de réalisation. |
JPH06310521A (ja) | 1993-04-23 | 1994-11-04 | Nippon Telegr & Teleph Corp <Ntt> | バイポーラトランジスタ |
JP3292894B2 (ja) | 1993-05-12 | 2002-06-17 | 日本電信電話株式会社 | 集積化受光回路 |
US5557146A (en) * | 1993-07-14 | 1996-09-17 | University Of South Florida | Ohmic contact using binder paste with semiconductor material dispersed therein |
JPH07161727A (ja) | 1993-12-02 | 1995-06-23 | Hitachi Ltd | ヘテロバイポーラトランジスタ |
US5853497A (en) * | 1996-12-12 | 1998-12-29 | Hughes Electronics Corporation | High efficiency multi-junction solar cells |
JP3807638B2 (ja) * | 1997-01-29 | 2006-08-09 | シャープ株式会社 | 半導体発光素子及びその製造方法 |
US6784463B2 (en) * | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
GB2330687B (en) * | 1997-10-22 | 1999-09-29 | Printable Field Emitters Ltd | Field emission devices |
US6455186B1 (en) * | 1998-03-05 | 2002-09-24 | Black & Decker Inc. | Battery cooling system |
JP3594482B2 (ja) * | 1998-04-02 | 2004-12-02 | 三菱電機株式会社 | ヘテロ接合バイポーラトランジスタ |
US7022556B1 (en) * | 1998-11-11 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Exposure device, exposure method and method of manufacturing semiconductor device |
US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
WO2000052742A1 (en) * | 1999-03-01 | 2000-09-08 | Sensors Unlimited Inc. | Epitaxially grown p-type diffusion source for photodiode fabrication |
US6380480B1 (en) * | 1999-05-18 | 2002-04-30 | Nippon Sheet Glass Co., Ltd | Photoelectric conversion device and substrate for photoelectric conversion device |
AU5518100A (en) * | 1999-07-13 | 2001-01-30 | Eidgenossische Technische Hochschule Zurich | Flexible thin-layer solar cell |
US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
FR2802340B1 (fr) * | 1999-12-13 | 2003-09-05 | Commissariat Energie Atomique | Structure comportant des cellules photovoltaiques et procede de realisation |
US6274402B1 (en) | 1999-12-30 | 2001-08-14 | Sunpower Corporation | Method of fabricating a silicon solar cell |
JP2001326229A (ja) | 2000-05-12 | 2001-11-22 | Toshiba Corp | ヘテロ接合バイポーラトランジスタ及びその製造方法 |
US6956283B1 (en) * | 2000-05-16 | 2005-10-18 | Peterson Kenneth A | Encapsulants for protecting MEMS devices during post-packaging release etch |
NL1016431C2 (nl) * | 2000-10-18 | 2002-04-22 | Univ Nijmegen | Werkwijze voor het scheiden van een film en een substraat. |
US20020092558A1 (en) | 2001-01-18 | 2002-07-18 | Kim Seong Bae | Integrated thin film cell and fabrication method thereof |
GB0114896D0 (en) | 2001-06-19 | 2001-08-08 | Bp Solar Ltd | Process for manufacturing a solar cell |
WO2003009339A2 (en) * | 2001-07-20 | 2003-01-30 | Microlink Devices, Inc. | Graded base gaassb for high speed gaas hbt |
JP3573737B2 (ja) * | 2002-01-18 | 2004-10-06 | Nec化合物デバイス株式会社 | ヘテロ接合バイポーラ・トランジスタおよび半導体集積回路 |
US20060162768A1 (en) * | 2002-05-21 | 2006-07-27 | Wanlass Mark W | Low bandgap, monolithic, multi-bandgap, optoelectronic devices |
US7217882B2 (en) * | 2002-05-24 | 2007-05-15 | Cornell Research Foundation, Inc. | Broad spectrum solar cell |
US6951819B2 (en) * | 2002-12-05 | 2005-10-04 | Blue Photonics, Inc. | High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same |
JP4471584B2 (ja) * | 2003-04-28 | 2010-06-02 | シャープ株式会社 | 化合物太陽電池の製造方法 |
US20060226440A1 (en) | 2003-09-04 | 2006-10-12 | Pan Janet L | Use of deep-level transitions in semiconductor devices |
JP2005142532A (ja) * | 2003-10-14 | 2005-06-02 | Matsushita Electric Ind Co Ltd | 窒化物半導体素子の製造方法 |
US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
KR20070004787A (ko) * | 2004-03-31 | 2007-01-09 | 로무 가부시키가이샤 | 적층형 박막 태양전지 및 그 방법 |
US7799699B2 (en) * | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
WO2006015185A2 (en) * | 2004-07-30 | 2006-02-09 | Aonex Technologies, Inc. | GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER |
US7687886B2 (en) * | 2004-08-19 | 2010-03-30 | Microlink Devices, Inc. | High on-state breakdown heterojunction bipolar transistor |
JP4518886B2 (ja) * | 2004-09-09 | 2010-08-04 | シャープ株式会社 | 半導体素子の製造方法 |
JP4397792B2 (ja) * | 2004-11-10 | 2010-01-13 | シャープ株式会社 | 化合物半導体素子の製造方法 |
JP2006216896A (ja) * | 2005-02-07 | 2006-08-17 | Canon Inc | 太陽電池の製造方法 |
US10374120B2 (en) | 2005-02-18 | 2019-08-06 | Koninklijke Philips N.V. | High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials |
US8089062B2 (en) * | 2005-03-23 | 2012-01-03 | Xerox Corporation | Wax encapsulated electronic devices |
EP1925039A4 (en) * | 2005-09-16 | 2012-07-04 | Showa Denko Kk | METHOD FOR PRODUCING A LIGHT-EMITTING NITRIDE SEMICONDUCTOR DEVICE |
US7450295B2 (en) * | 2006-03-02 | 2008-11-11 | Qualcomm Mems Technologies, Inc. | Methods for producing MEMS with protective coatings using multi-component sacrificial layers |
US7956370B2 (en) * | 2007-06-12 | 2011-06-07 | Siphoton, Inc. | Silicon based solid state lighting |
CA2692126A1 (en) | 2007-07-03 | 2009-01-08 | Microlink Devices, Inc. | Methods for fabricating thin film iii-v compound solar cell |
US9190560B2 (en) * | 2010-05-18 | 2015-11-17 | Agency For Science Technology And Research | Method of forming a light emitting diode structure and a light diode structure |
JP2011253925A (ja) * | 2010-06-02 | 2011-12-15 | Toshiba Corp | 発光装置の製造方法 |
-
2008
- 2008-07-03 CA CA002692126A patent/CA2692126A1/en not_active Abandoned
- 2008-07-03 JP JP2010514875A patent/JP5576272B2/ja active Active
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- 2008-07-03 CN CN200880101271A patent/CN101790794A/zh active Pending
- 2008-07-03 CN CN2008801011862A patent/CN101785115B/zh active Active
- 2008-07-03 WO PCT/US2008/008262 patent/WO2009005824A1/en active Application Filing
- 2008-07-03 US US12/167,588 patent/US20090038678A1/en not_active Abandoned
- 2008-07-03 EP EP08779967.2A patent/EP2168171A4/en not_active Withdrawn
- 2008-07-03 JP JP2010514876A patent/JP5576273B2/ja active Active
- 2008-07-03 CA CA002692124A patent/CA2692124A1/en not_active Abandoned
- 2008-07-03 EP EP08779968.0A patent/EP2168172B1/en active Active
- 2008-07-03 KR KR1020107002449A patent/KR20100047246A/ko not_active Application Discontinuation
- 2008-07-03 SG SG2012048898A patent/SG182990A1/en unknown
- 2008-07-03 SG SG2012048880A patent/SG182989A1/en unknown
- 2008-07-03 WO PCT/US2008/008263 patent/WO2009005825A1/en active Application Filing
- 2008-07-03 US US12/167,583 patent/US7994419B2/en active Active
-
2011
- 2011-06-21 US US13/165,318 patent/US10923617B2/en active Active
-
2021
- 2021-02-08 US US17/170,133 patent/US11901476B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060144435A1 (en) * | 2002-05-21 | 2006-07-06 | Wanlass Mark W | High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters |
US20040206389A1 (en) * | 2003-04-21 | 2004-10-21 | Sharp Kabushiki Kaisha | Compound solar battery and manufacturing method thereof |
Non-Patent Citations (2)
Title |
---|
See also references of WO2009005824A1 * |
SHARPS P R ET AL: "Wafer bonding for use in mechanically stacked multi-bandgap cells", CONFERENCE RECORD OF THE 26TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997. PVSC '97. ANAHEIM, CA, SEPT. 29 - OCT. 3, 1997; [IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE], NEW YORK, NY : IEEE, US, 29 September 1997 (1997-09-29), pages 895 - 898, XP010268023, ISBN: 978-0-7803-3767-1, DOI: 10.1109/PVSC.1997.654231 * |
Also Published As
Publication number | Publication date |
---|---|
CN101785115B (zh) | 2013-05-08 |
WO2009005825A8 (en) | 2010-02-11 |
WO2009005824A1 (en) | 2009-01-08 |
KR20100049575A (ko) | 2010-05-12 |
SG182990A1 (en) | 2012-08-30 |
KR20100047246A (ko) | 2010-05-07 |
CN101790794A (zh) | 2010-07-28 |
US11901476B2 (en) | 2024-02-13 |
JP5576273B2 (ja) | 2014-08-20 |
US10923617B2 (en) | 2021-02-16 |
US7994419B2 (en) | 2011-08-09 |
CA2692124A1 (en) | 2009-01-08 |
EP2168172B1 (en) | 2019-05-22 |
SG182989A1 (en) | 2012-08-30 |
EP2168172A1 (en) | 2010-03-31 |
US20110318866A1 (en) | 2011-12-29 |
WO2009005825A1 (en) | 2009-01-08 |
JP2010532575A (ja) | 2010-10-07 |
US20090044860A1 (en) | 2009-02-19 |
CN101785115A (zh) | 2010-07-21 |
EP2168172A4 (en) | 2016-05-18 |
US20210328093A1 (en) | 2021-10-21 |
JP2010532576A (ja) | 2010-10-07 |
JP5576272B2 (ja) | 2014-08-20 |
EP2168171A1 (en) | 2010-03-31 |
US20090038678A1 (en) | 2009-02-12 |
CA2692126A1 (en) | 2009-01-08 |
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