JP5972369B2 - 反転型メタモルフィック多接合(imm)太陽電池セル及び関連する製作方法 - Google Patents
反転型メタモルフィック多接合(imm)太陽電池セル及び関連する製作方法 Download PDFInfo
- Publication number
- JP5972369B2 JP5972369B2 JP2014518583A JP2014518583A JP5972369B2 JP 5972369 B2 JP5972369 B2 JP 5972369B2 JP 2014518583 A JP2014518583 A JP 2014518583A JP 2014518583 A JP2014518583 A JP 2014518583A JP 5972369 B2 JP5972369 B2 JP 5972369B2
- Authority
- JP
- Japan
- Prior art keywords
- subcell
- silicon
- grid
- metal layer
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 86
- 229910052710 silicon Inorganic materials 0.000 claims description 86
- 239000010703 silicon Substances 0.000 claims description 86
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 30
- 239000006117 anti-reflective coating Substances 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005304 joining Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
- H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Description
本開示の実施形態について一般的用語でこれまで説明してきたが、次に、寸法通りには必ずしも描かれていない添付の図面を参照することとする。
Claims (5)
- シリコンサブセル形成工程と、
該シリコンサブセル形成工程とは別に行う、サブセル複合体形成工程と、
該シリコンサブセルと該サブセル複合体との接合工程からなる、
反転型メタモルフィック多接合(inverted metamorphic multi−junction:IMM)太陽電池セルを製作する方法であって:
前記サブセル複合体形成工程は、
n/p接合を有する第1サブセルを仮基板の上に形成することと、
前記第1サブセルよりも小さいバンドギャップを有し、n/p接合を有する第2サブセルを前記第1サブセルの上に形成することと、
第1格子状金属層を前記第2サブセルの上に形成することと、
反射防止コーティングを、前記第1格子状金属層のグリッド群の間の前記第2サブセルの露出部分の上に堆積させることと、を含み、
前記シリコンサブセル形成工程は、
内部にn/p接合を有するシリコンサブセルを設けることと、
第2格子状金属層を前記シリコンサブセルの上に形成することと、
反射防止コーティングを、前記第2格子状金属層のグリッド群の間の前記シリコンサブセルの露出部分の上に堆積させることとを含み、
前記接合工程は、
前記第2サブセルを前記シリコンサブセルに接合することであって、金属間接合部を、前記第2サブセル及び前記シリコンサブセルの前記第1格子状金属層と前記第2格子状金属層との間に設けることを含む、接合することと、
前記仮基板を除去することと、
第3格子状金属層を前記第1サブセルの上に形成し、反射防止コーティングを前記第1サブセルの他の位置に堆積させること
を含む
方法。 - 前記第1サブセルはGaInPにより構成され、前記第2サブセルは、0≦x≦0.1とした場合に、InxGa1−xAsにより構成される、請求項1に記載の方法。
- 前記仮基板は、GaAsまたはGeからなる請求項1または2に記載の方法。
- 前記仮基板を除去した後に、電気コンタクトを前記第1サブセルの上に形成することと、反射防止コーティングを、前記第1サブセルの露出部分の上に堆積させることを更に含む、請求項1から3のいずれか一項に記載の方法。
- 前記シリコンサブセルの周辺部分が前記第1及び第2サブセルを超えて突出するように、前記第1及び第2サブセルよりも大きい面積を有する前記シリコンサブセルを設けることを更に含む、請求項1から3のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/176,325 US9184332B2 (en) | 2011-07-05 | 2011-07-05 | Inverted metamorphic multi-junction (IMM) solar cell and associated fabrication method |
US13/176,325 | 2011-07-05 | ||
PCT/US2012/040917 WO2013006243A2 (en) | 2011-07-05 | 2012-06-05 | Inverted metamorphic multi-junction (imm) solar cell and associated fabrication method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014523128A JP2014523128A (ja) | 2014-09-08 |
JP5972369B2 true JP5972369B2 (ja) | 2016-08-17 |
Family
ID=46276024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014518583A Active JP5972369B2 (ja) | 2011-07-05 | 2012-06-05 | 反転型メタモルフィック多接合(imm)太陽電池セル及び関連する製作方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9184332B2 (ja) |
JP (1) | JP5972369B2 (ja) |
DE (1) | DE112012002841B4 (ja) |
SG (1) | SG195232A1 (ja) |
WO (1) | WO2013006243A2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9018020B2 (en) * | 2013-05-24 | 2015-04-28 | The Boeing Company | Shunt treatment in inverted and wafer bonded solar cells |
US9425331B2 (en) * | 2014-08-06 | 2016-08-23 | The Boeing Company | Solar cell wafer connecting system |
US20170330986A1 (en) * | 2016-05-12 | 2017-11-16 | North Carolina State University | Intermetallic bonded multi-junction structures |
CN113964225A (zh) * | 2020-07-20 | 2022-01-21 | 西安电子科技大学 | 低成本高可靠四端CsPbBr3/Si叠层太阳电池及其制作方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4338480A (en) | 1980-12-29 | 1982-07-06 | Varian Associates, Inc. | Stacked multijunction photovoltaic converters |
US6340788B1 (en) | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
US20060021565A1 (en) | 2004-07-30 | 2006-02-02 | Aonex Technologies, Inc. | GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer |
US20090078308A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Thin Inverted Metamorphic Multijunction Solar Cells with Rigid Support |
TWI349371B (en) * | 2007-02-13 | 2011-09-21 | Epistar Corp | An optoelectronical semiconductor device having a bonding structure |
US20090272430A1 (en) * | 2008-04-30 | 2009-11-05 | Emcore Solar Power, Inc. | Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells |
-
2011
- 2011-07-05 US US13/176,325 patent/US9184332B2/en active Active
-
2012
- 2012-06-05 DE DE112012002841.4T patent/DE112012002841B4/de active Active
- 2012-06-05 WO PCT/US2012/040917 patent/WO2013006243A2/en active Application Filing
- 2012-06-05 JP JP2014518583A patent/JP5972369B2/ja active Active
- 2012-06-05 SG SG2013088570A patent/SG195232A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2013006243A2 (en) | 2013-01-10 |
DE112012002841T5 (de) | 2014-04-17 |
DE112012002841B4 (de) | 2019-10-24 |
JP2014523128A (ja) | 2014-09-08 |
US20130008493A1 (en) | 2013-01-10 |
WO2013006243A3 (en) | 2013-05-10 |
US9184332B2 (en) | 2015-11-10 |
SG195232A1 (en) | 2013-12-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8283558B2 (en) | Solar cell assembly with combined handle substrate and bypass diode and method | |
US10374120B2 (en) | High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials | |
US10069033B2 (en) | Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method | |
TWI482300B (zh) | 具有iv/iii-v族混合合金之反轉多接面太陽能單元 | |
JP5996161B2 (ja) | 多接合太陽電池における変成層 | |
JP2009076921A (ja) | 多接合ソーラーセル及びその製造方法 | |
CN104247047B (zh) | 多结太阳能电池装置的制造 | |
US20100151618A1 (en) | Growth Substrates for Inverted Metamorphic Multijunction Solar Cells | |
JP2010263222A5 (ja) | ||
US9818901B2 (en) | Wafer bonded solar cells and fabrication methods | |
JP2010263217A5 (ja) | ||
JP6324791B2 (ja) | ハイブリッドメタモルフィックバッファ層を備える光電気デバイス | |
US20170040479A1 (en) | Reliable interconnection of solar cells | |
US9214594B2 (en) | Fabrication of solar cells with electrically conductive polyimide adhesive | |
JP5972369B2 (ja) | 反転型メタモルフィック多接合(imm)太陽電池セル及び関連する製作方法 | |
US9287438B1 (en) | Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation | |
Zhao et al. | Characteristics of InGaP/GaAs double junction thin film solar cells on a flexible metallic substrate | |
KR20140074338A (ko) | 상이한 퇴적 기술들에 의해 형성된 반도체 소자에서의 다중 접합들 | |
US9768326B1 (en) | Fabrication of solar cells with electrically conductive polyimide adhesive | |
US20170170355A1 (en) | Multijunction solar cells with electrically conductive polyimide adhesive | |
WO2020029581A1 (zh) | 柔性太阳能电池及其制作方法 | |
US9040342B2 (en) | Photovoltaic cell and manufacturing method thereof | |
CN112713211B (zh) | 一种硅基六结太阳电池及其制作方法 | |
US20200052141A1 (en) | Method and device for low cost, high efficiency step photovoltaic cells | |
CN118712280A (zh) | 一种柔性太阳能电池及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150529 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160223 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160224 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160519 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160614 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160712 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5972369 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |