JP6259393B2 - 電流生成が向上した半導体デバイス - Google Patents

電流生成が向上した半導体デバイス Download PDF

Info

Publication number
JP6259393B2
JP6259393B2 JP2014501067A JP2014501067A JP6259393B2 JP 6259393 B2 JP6259393 B2 JP 6259393B2 JP 2014501067 A JP2014501067 A JP 2014501067A JP 2014501067 A JP2014501067 A JP 2014501067A JP 6259393 B2 JP6259393 B2 JP 6259393B2
Authority
JP
Japan
Prior art keywords
lbar
subcell
solar cell
layer
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014501067A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014514746A (ja
JP2014514746A5 (enExample
Inventor
リチャード アール． キング，
リチャード アール． キング，
クリストファー エム． フェッツァー，
クリストファー エム． フェッツァー，
ディミトリ ディー． クルット，
ディミトリ ディー． クルット，
ナサー エイチ． カラム，
ナサー エイチ． カラム，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing Co
Original Assignee
Boeing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boeing Co filed Critical Boeing Co
Publication of JP2014514746A publication Critical patent/JP2014514746A/ja
Publication of JP2014514746A5 publication Critical patent/JP2014514746A5/ja
Application granted granted Critical
Publication of JP6259393B2 publication Critical patent/JP6259393B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H10F10/1425—Inverted metamorphic multi-junction [IMM] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
JP2014501067A 2011-03-22 2012-01-31 電流生成が向上した半導体デバイス Active JP6259393B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/069,274 2011-03-22
US13/069,274 US10170652B2 (en) 2011-03-22 2011-03-22 Metamorphic solar cell having improved current generation
PCT/US2012/023379 WO2012128848A1 (en) 2011-03-22 2012-01-31 Metamorphic solar cell having improved current generation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017172785A Division JP6650916B2 (ja) 2011-03-22 2017-09-08 電流生成が向上した半導体デバイス

Publications (3)

Publication Number Publication Date
JP2014514746A JP2014514746A (ja) 2014-06-19
JP2014514746A5 JP2014514746A5 (enExample) 2015-03-19
JP6259393B2 true JP6259393B2 (ja) 2018-01-10

Family

ID=45852692

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2014501067A Active JP6259393B2 (ja) 2011-03-22 2012-01-31 電流生成が向上した半導体デバイス
JP2017172785A Active JP6650916B2 (ja) 2011-03-22 2017-09-08 電流生成が向上した半導体デバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017172785A Active JP6650916B2 (ja) 2011-03-22 2017-09-08 電流生成が向上した半導体デバイス

Country Status (5)

Country Link
US (1) US10170652B2 (enExample)
EP (2) EP3444848A1 (enExample)
JP (2) JP6259393B2 (enExample)
TW (1) TWI666785B (enExample)
WO (1) WO2012128848A1 (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8921687B1 (en) * 2011-08-19 2014-12-30 Magnolia Solar, Inc. High efficiency quantum well waveguide solar cells and methods for constructing the same
US20130043458A1 (en) * 2011-08-19 2013-02-21 Svt Associates, Inc. Long Wavelength Infrared Superlattice
US20130043459A1 (en) * 2011-08-19 2013-02-21 Svt Associates, Inc. Long Wavelength Infrared Superlattice
FR2979434B1 (fr) * 2011-08-24 2013-09-27 Commissariat Energie Atomique Procede de realisation d'un reflecteur optique a nanocristaux de semi-conducteur
FR2981195B1 (fr) * 2011-10-11 2024-08-23 Soitec Silicon On Insulator Multi-jonctions dans un dispositif semi-conducteur forme par differentes techniques de depot
CN102569475B (zh) * 2012-02-08 2014-05-14 天津三安光电有限公司 一种四结四元化合物太阳能电池及其制备方法
US8618639B2 (en) * 2012-05-16 2013-12-31 Infineon Technologies Austria Ag Semiconductor structure, semiconductor device having a semiconductor structure, and method for manufacturing a semiconductor structure
US10903383B2 (en) * 2012-09-14 2021-01-26 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9099595B2 (en) 2012-09-14 2015-08-04 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US11495705B2 (en) 2012-09-14 2022-11-08 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9985160B2 (en) 2012-09-14 2018-05-29 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US11646388B2 (en) * 2012-09-14 2023-05-09 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9997659B2 (en) 2012-09-14 2018-06-12 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
JP5763603B2 (ja) * 2012-10-04 2015-08-12 トヨタ自動車株式会社 光起電装置及びその製造方法
US9490330B2 (en) * 2012-10-05 2016-11-08 Massachusetts Institute Of Technology Controlling GaAsP/SiGe interfaces
US20140182667A1 (en) * 2013-01-03 2014-07-03 Benjamin C. Richards Multijunction solar cell with low band gap absorbing layer in the middle cell
DE102013002298A1 (de) * 2013-02-08 2014-08-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mehrfachsolarzelle, Verfahren zu deren Herstellung und Verwendung hiervon
CN103165750B (zh) * 2013-02-28 2015-07-15 溧阳市生产力促进中心 一种具有减反射膜的五结太阳能电池的制造方法
CN103165749B (zh) * 2013-02-28 2015-07-15 溧阳市生产力促进中心 一种具有减反射膜的五结级联光伏电池的制造方法
US9530911B2 (en) 2013-03-14 2016-12-27 The Boeing Company Solar cell structures for improved current generation and collection
US11456374B2 (en) * 2013-03-15 2022-09-27 Matthew H. Kim Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor devices
EP2827380A1 (en) * 2013-07-19 2015-01-21 Emcore Solar Power, Inc. Solar power system for space vehicles or satellites using inverted metamorphic multijunction solar cells
US9136408B2 (en) * 2013-11-26 2015-09-15 Hunt Energy Enterprises, Llc Perovskite and other solar cell materials
US9331227B2 (en) * 2014-01-10 2016-05-03 The Boeing Company Directly bonded, lattice-mismatched semiconductor device
EP2919276B1 (de) * 2014-03-13 2019-07-10 AZUR SPACE Solar Power GmbH Mehrfach-Solarzelle
JP6582591B2 (ja) * 2014-07-11 2019-10-02 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
CN104201230A (zh) * 2014-09-10 2014-12-10 六安市大宇高分子材料有限公司 一种三子结化合物光伏电池
US11563133B1 (en) 2015-08-17 2023-01-24 SolAero Techologies Corp. Method of fabricating multijunction solar cells for space applications
US20170084771A1 (en) * 2015-09-21 2017-03-23 The Boeing Company Antimonide-based high bandgap tunnel junction for semiconductor devices
RU2611569C1 (ru) * 2015-12-09 2017-02-28 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Метаморфный фотопреобразователь
DE102016208113B4 (de) * 2016-05-11 2022-07-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mehrfachsolarzelle und deren Verwendung
WO2018034812A1 (en) * 2016-08-19 2018-02-22 Solar Junction Corporation Dilute nitride devices with active group iv substrate and controlled dopant diffusion at the nucleation layer-substrate interface
US11380813B2 (en) * 2019-02-11 2022-07-05 Solaero Technologies Corp. Metamorphic solar cells
US12249667B2 (en) 2017-08-18 2025-03-11 Solaero Technologies Corp. Space vehicles including multijunction metamorphic solar cells
US10700230B1 (en) 2016-10-14 2020-06-30 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
US11075313B2 (en) * 2017-06-16 2021-07-27 Utica Leaseco, Llc Optoelectronic devices manufactured using different growth substrates
DE102018001592A1 (de) * 2018-03-01 2019-09-05 Azur Space Solar Power Gmbh Mehrfachsolarzelle
FR3083405B1 (fr) 2018-06-28 2020-07-31 Airbus Defence & Space Sas Dispositif de test d'un generateur solaire de satellite
EP3834224A1 (en) 2018-08-09 2021-06-16 Array Photonics, Inc. Hydrogen diffusion barrier for hybrid semiconductor growth
EP3844816A4 (en) * 2018-08-30 2022-05-18 Array Photonics, Inc. MULTILAYER SOLAR CELLS AND MULTICOLOR PHOTODETECTORS WITH INTEGRATED EDGE FILTER
CN109301006B (zh) * 2018-11-13 2024-07-26 中山德华芯片技术有限公司 一种应用于晶格失配多结太阳能电池的dbr结构
US12249666B2 (en) * 2018-12-11 2025-03-11 The Boeing Company Use of a low bandgap absorber region in a laser power converter
DE102019003069B4 (de) * 2019-04-30 2023-06-01 Azur Space Solar Power Gmbh Stapelförmige hochsperrende lll-V-Halbleiterleistungsdioden
CN112038425B (zh) * 2019-06-03 2024-04-30 中国科学院苏州纳米技术与纳米仿生研究所 一种多结叠层激光光伏电池
US20200411708A1 (en) * 2019-06-25 2020-12-31 The Boeing Company Solar cell design optimized for performance at high radiation doses
EP3799136B1 (de) * 2019-09-27 2023-02-01 AZUR SPACE Solar Power GmbH Monolithische mehrfachsolarzelle mit genau vier teilzellen
WO2021076979A1 (en) * 2019-10-18 2021-04-22 Utica Leaseco, Llc Optoelectronic devices manufactured using different growth substrates
CN111092127A (zh) * 2019-11-26 2020-05-01 中国电子科技集团公司第十八研究所 一种正向晶格失配三结太阳电池
EP3937258A1 (de) * 2020-07-10 2022-01-12 AZUR SPACE Solar Power GmbH Monolithische metamorphe mehrfachsolarzelle
CN112117344B (zh) * 2020-09-23 2022-05-31 扬州乾照光电有限公司 一种太阳能电池以及制作方法
CN112909099B (zh) * 2021-01-15 2022-04-12 中山德华芯片技术有限公司 一种双面应力补偿的太阳能电池
CN113690325B (zh) * 2021-06-30 2023-10-13 华灿光电（浙江）有限公司 太阳能电池及其制造方法
TWI869839B (zh) * 2022-05-06 2025-01-11 全新光電科技股份有限公司 具有缺陷阻隔區的半導體元件
JP7648843B1 (ja) 2023-10-31 2025-03-18 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長用基板、光半導体素子の製造方法、及び光半導体素子
CN118658918B (zh) * 2024-07-19 2025-11-04 江苏仲磊芯半导体有限公司 一种四结太阳能电池及其制作方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5562345A (en) 1992-05-05 1996-10-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method and apparatus for thermographically and quantitatively analyzing a structure for disbonds and/or inclusions
JPH06163962A (ja) 1992-11-26 1994-06-10 Sumitomo Electric Ind Ltd 太陽電池
US6340788B1 (en) * 1999-12-02 2002-01-22 Hughes Electronics Corporation Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications
GB0118150D0 (en) * 2001-07-25 2001-09-19 Imperial College Thermophotovoltaic device
US7119271B2 (en) 2001-10-12 2006-10-10 The Boeing Company Wide-bandgap, lattice-mismatched window layer for a solar conversion device
US8067687B2 (en) * 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
AU2002305659A1 (en) 2002-05-21 2003-12-12 Midwest Research Institute Low-bandgap, monolithic, multi-bandgap, optoelectronic devices
US6951819B2 (en) 2002-12-05 2005-10-04 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
US7812249B2 (en) 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
US20060207647A1 (en) 2005-03-16 2006-09-21 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
ES2297972A1 (es) 2005-05-30 2008-05-01 Universidad Politecnica De Madrid Fotodetector de infrarrojos de banda intermedia y puntos cuanticos.
US20070137700A1 (en) 2005-12-16 2007-06-21 The Regents Of The University Of California Development of an electronic device quality aluminum antimonide (AISb) semiconductor for solar cell applications
US10069026B2 (en) * 2005-12-19 2018-09-04 The Boeing Company Reduced band gap absorber for solar cells
US8791359B2 (en) 2006-01-28 2014-07-29 Banpil Photonics, Inc. High efficiency photovoltaic cells
US8536445B2 (en) 2006-06-02 2013-09-17 Emcore Solar Power, Inc. Inverted metamorphic multijunction solar cells
US7629532B2 (en) 2006-12-29 2009-12-08 Sundiode, Inc. Solar cell having active region with nanostructures having energy wells
US20100006143A1 (en) 2007-04-26 2010-01-14 Welser Roger E Solar Cell Devices
JP2009026887A (ja) * 2007-07-18 2009-02-05 Omron Corp 太陽電池
JP4974986B2 (ja) 2007-09-28 2012-07-11 富士フイルム株式会社 太陽電池用基板および太陽電池
US20090272438A1 (en) * 2008-05-05 2009-11-05 Emcore Corporation Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell
US8101856B2 (en) 2008-10-02 2012-01-24 International Business Machines Corporation Quantum well GaP/Si tandem photovoltaic cells
TWI427806B (zh) * 2009-01-12 2014-02-21 Epistar Corp 堆疊型太陽能電池

Also Published As

Publication number Publication date
EP2689465A1 (en) 2014-01-29
TWI666785B (zh) 2019-07-21
JP2014514746A (ja) 2014-06-19
US10170652B2 (en) 2019-01-01
EP3444848A1 (en) 2019-02-20
JP2018026570A (ja) 2018-02-15
TW201246586A (en) 2012-11-16
JP6650916B2 (ja) 2020-02-19
EP2689465B1 (en) 2022-07-20
US20120240987A1 (en) 2012-09-27
WO2012128848A1 (en) 2012-09-27

Similar Documents

Publication Publication Date Title
JP6259393B2 (ja) 電流生成が向上した半導体デバイス
US20240405144A1 (en) Solar cell structures for improved current generation and collection
US7812249B2 (en) Multijunction photovoltaic cell grown on high-miscut-angle substrate
TWI600173B (zh) 在中間電池中具有低能隙吸收層之多接面太陽能電池及其製造方法
US7119271B2 (en) Wide-bandgap, lattice-mismatched window layer for a solar conversion device
TWI441343B (zh) 反向變質多接面太陽能電池中異質接面子電池
US8735202B2 (en) High-efficiency, monolithic, multi-bandgap, tandem, photovoltaic energy converters
KR101908742B1 (ko) 다중접합 태양전지를 위한 인화인듐 격자 상수의 타입-2 고 밴드갭 터널 접합
KR101783971B1 (ko) 금속 디스크 어레이를 구비한 적층형 태양전지
Soley et al. Advancing efficiency: comprehensive strategies for minimizing optical and electrical losses in group III-V compound tandem solar cells for future photovoltaic technology
CN111276560B (zh) 砷化镓太阳电池及其制造方法
Kawabata et al. III-V solar cells
CN118676238B (zh) 一种抗辐照五结太阳能电池及其制作方法
YAMAGUCHI SUPER-HIGH-EFFICIENCY III–V TANDEM AND MULTIJUNCTION CELLS
CN108198891A (zh) 太阳能电池及其制作方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150129

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150129

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151030

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151104

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160202

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160712

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20161012

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161121

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170516

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170908

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20170919

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171205

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171208

R150 Certificate of patent or registration of utility model

Ref document number: 6259393

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250