JP2014519720A5 - - Google Patents

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Publication number
JP2014519720A5
JP2014519720A5 JP2014515909A JP2014515909A JP2014519720A5 JP 2014519720 A5 JP2014519720 A5 JP 2014519720A5 JP 2014515909 A JP2014515909 A JP 2014515909A JP 2014515909 A JP2014515909 A JP 2014515909A JP 2014519720 A5 JP2014519720 A5 JP 2014519720A5
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JP
Japan
Prior art keywords
junction
iii
semiconductor
solar cell
layer
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Application number
JP2014515909A
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English (en)
Japanese (ja)
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JP6025834B2 (ja
JP2014519720A (ja
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Application filed filed Critical
Priority claimed from PCT/US2012/042000 external-priority patent/WO2012173959A2/en
Publication of JP2014519720A publication Critical patent/JP2014519720A/ja
Publication of JP2014519720A5 publication Critical patent/JP2014519720A5/ja
Application granted granted Critical
Publication of JP6025834B2 publication Critical patent/JP6025834B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014515909A 2011-06-15 2012-06-12 改善された変換効率を有する太陽電池 Expired - Fee Related JP6025834B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161497172P 2011-06-15 2011-06-15
US61/497,172 2011-06-15
PCT/US2012/042000 WO2012173959A2 (en) 2011-06-15 2012-06-12 Solar cell with improved conversion efficiency

Publications (3)

Publication Number Publication Date
JP2014519720A JP2014519720A (ja) 2014-08-14
JP2014519720A5 true JP2014519720A5 (enExample) 2015-07-23
JP6025834B2 JP6025834B2 (ja) 2016-11-16

Family

ID=46331705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014515909A Expired - Fee Related JP6025834B2 (ja) 2011-06-15 2012-06-12 改善された変換効率を有する太陽電池

Country Status (6)

Country Link
US (1) US9318637B2 (enExample)
EP (1) EP2721647A2 (enExample)
JP (1) JP6025834B2 (enExample)
CN (1) CN103597614B (enExample)
TW (1) TWI570945B (enExample)
WO (1) WO2012173959A2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9478634B2 (en) 2014-11-07 2016-10-25 Globalfoundries Inc. Methods of forming replacement gate structures on finFET devices and the resulting devices
CN117117020A (zh) * 2023-09-15 2023-11-24 晶科能源股份有限公司 太阳能电池及光伏组件

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63194373A (ja) * 1987-02-09 1988-08-11 Fujitsu Ltd 太陽電池
US5248631A (en) 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
JP3457468B2 (ja) * 1995-09-12 2003-10-20 株式会社東芝 多層構造半導体装置
JP2771497B2 (ja) * 1995-11-29 1998-07-02 株式会社日立製作所 太陽電池
JP3657096B2 (ja) * 1997-10-17 2005-06-08 シャープ株式会社 ＧａＡｓ太陽電池
JP2002206168A (ja) * 2000-10-24 2002-07-26 Canon Inc シリコン系薄膜の形成方法、シリコン系半導体層の形成方法及び光起電力素子
US6815736B2 (en) * 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US20020179936A1 (en) * 2001-06-01 2002-12-05 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices which include quaternary chalcogenides
US6660928B1 (en) * 2002-04-02 2003-12-09 Essential Research, Inc. Multi-junction photovoltaic cell
US8067687B2 (en) * 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US7119377B2 (en) * 2004-06-18 2006-10-10 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
WO2007142865A2 (en) * 2006-05-31 2007-12-13 Corning Incorporated Thin film photovoltaic structure and fabrication
US20080110489A1 (en) * 2006-11-14 2008-05-15 Fareed Sepehry-Fard Very High Efficiency Multi-Junction Solar Spectrum Integrator Cells, and the Corresponding System and Method
US20080128020A1 (en) * 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
KR101538817B1 (ko) * 2007-09-25 2015-07-22 퍼스트 솔라, 인코포레이티드 헤테로접합을 포함하는 광기전 장치
WO2009067347A1 (en) * 2007-11-20 2009-05-28 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Lattice matched multi- junction photovoltaic and optoelectronic devices
RU2485626C2 (ru) * 2007-12-21 2013-06-20 Квалкомм Мемс Текнолоджис, Инк. Многопереходные фотогальванические элементы
WO2009151979A2 (en) * 2008-06-09 2009-12-17 4Power, Llc High-efficiency solar cell structures and methods
US9722131B2 (en) * 2009-03-16 2017-08-01 The Boeing Company Highly doped layer for tunnel junctions in solar cells
US10505062B2 (en) * 2009-07-09 2019-12-10 Faquir Chand Jain High efficiency tandem solar cells and a method for fabricating same
AU2010278623B2 (en) * 2009-07-29 2015-09-03 Aton Optronics Inc Solar cell and method of fabrication thereof

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