TWI570945B - 具改良轉換效率之太陽能電池 - Google Patents

具改良轉換效率之太陽能電池 Download PDF

Info

Publication number
TWI570945B
TWI570945B TW101121411A TW101121411A TWI570945B TW I570945 B TWI570945 B TW I570945B TW 101121411 A TW101121411 A TW 101121411A TW 101121411 A TW101121411 A TW 101121411A TW I570945 B TWI570945 B TW I570945B
Authority
TW
Taiwan
Prior art keywords
junction
solar cell
semiconductor layer
current spreading
type doped
Prior art date
Application number
TW101121411A
Other languages
English (en)
Chinese (zh)
Other versions
TW201306288A (zh
Inventor
麥可 艾伯特 哈斯
Original Assignee
３Ｍ新設資產公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ３Ｍ新設資產公司 filed Critical ３Ｍ新設資產公司
Publication of TW201306288A publication Critical patent/TW201306288A/zh
Application granted granted Critical
Publication of TWI570945B publication Critical patent/TWI570945B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
TW101121411A 2011-06-15 2012-06-14 具改良轉換效率之太陽能電池 TWI570945B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161497172P 2011-06-15 2011-06-15

Publications (2)

Publication Number Publication Date
TW201306288A TW201306288A (zh) 2013-02-01
TWI570945B true TWI570945B (zh) 2017-02-11

Family

ID=46331705

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101121411A TWI570945B (zh) 2011-06-15 2012-06-14 具改良轉換效率之太陽能電池

Country Status (6)

Country Link
US (1) US9318637B2 (enExample)
EP (1) EP2721647A2 (enExample)
JP (1) JP6025834B2 (enExample)
CN (1) CN103597614B (enExample)
TW (1) TWI570945B (enExample)
WO (1) WO2012173959A2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9478634B2 (en) 2014-11-07 2016-10-25 Globalfoundries Inc. Methods of forming replacement gate structures on finFET devices and the resulting devices
CN117117020A (zh) * 2023-09-15 2023-11-24 晶科能源股份有限公司 太阳能电池及光伏组件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100116942A1 (en) * 2008-06-09 2010-05-13 Fitzgerald Eugene A High-efficiency solar cell structures
US20110005570A1 (en) * 2009-07-09 2011-01-13 Faquir Chand Jain High efficiency tandem solar cells and a method for fabricating same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63194373A (ja) * 1987-02-09 1988-08-11 Fujitsu Ltd 太陽電池
US5248631A (en) 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
JP3457468B2 (ja) * 1995-09-12 2003-10-20 株式会社東芝 多層構造半導体装置
JP2771497B2 (ja) * 1995-11-29 1998-07-02 株式会社日立製作所 太陽電池
JP3657096B2 (ja) * 1997-10-17 2005-06-08 シャープ株式会社 ＧａＡｓ太陽電池
JP2002206168A (ja) * 2000-10-24 2002-07-26 Canon Inc シリコン系薄膜の形成方法、シリコン系半導体層の形成方法及び光起電力素子
US6815736B2 (en) * 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US20020179936A1 (en) * 2001-06-01 2002-12-05 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices which include quaternary chalcogenides
US6660928B1 (en) * 2002-04-02 2003-12-09 Essential Research, Inc. Multi-junction photovoltaic cell
US8067687B2 (en) * 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US7119377B2 (en) * 2004-06-18 2006-10-10 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
WO2007142865A2 (en) * 2006-05-31 2007-12-13 Corning Incorporated Thin film photovoltaic structure and fabrication
US20080110489A1 (en) * 2006-11-14 2008-05-15 Fareed Sepehry-Fard Very High Efficiency Multi-Junction Solar Spectrum Integrator Cells, and the Corresponding System and Method
US20080128020A1 (en) * 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
KR101538817B1 (ko) * 2007-09-25 2015-07-22 퍼스트 솔라, 인코포레이티드 헤테로접합을 포함하는 광기전 장치
WO2009067347A1 (en) * 2007-11-20 2009-05-28 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Lattice matched multi- junction photovoltaic and optoelectronic devices
RU2485626C2 (ru) * 2007-12-21 2013-06-20 Квалкомм Мемс Текнолоджис, Инк. Многопереходные фотогальванические элементы
US9722131B2 (en) * 2009-03-16 2017-08-01 The Boeing Company Highly doped layer for tunnel junctions in solar cells
AU2010278623B2 (en) * 2009-07-29 2015-09-03 Aton Optronics Inc Solar cell and method of fabrication thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100116942A1 (en) * 2008-06-09 2010-05-13 Fitzgerald Eugene A High-efficiency solar cell structures
US20110005570A1 (en) * 2009-07-09 2011-01-13 Faquir Chand Jain High efficiency tandem solar cells and a method for fabricating same

Also Published As

Publication number Publication date
JP6025834B2 (ja) 2016-11-16
WO2012173959A3 (en) 2013-05-16
CN103597614B (zh) 2017-03-01
JP2014519720A (ja) 2014-08-14
US20140124022A1 (en) 2014-05-08
EP2721647A2 (en) 2014-04-23
US9318637B2 (en) 2016-04-19
WO2012173959A2 (en) 2012-12-20
TW201306288A (zh) 2013-02-01
CN103597614A (zh) 2014-02-19

Similar Documents

Publication Publication Date Title
JP6689456B2 (ja) 透明トンネル接合を有する光起電力デバイス
US9520517B2 (en) Solar cell
CA2623192C (en) Photovoltaic cells
JP2008211217A (ja) 薄膜型太陽電池及びその製造方法
US10861992B2 (en) Perovskite solar cells for space
TW200933913A (en) High concentration terrestrial solar cell arrangement with III-V compound semiconductor cell
US20120285519A1 (en) Grid design for iii-v compound semiconductor cell
US20120318324A1 (en) Laterally Arranged Multiple-Bandgap Solar Cells
JP5481665B2 (ja) 多接合型太陽電池
TWI570945B (zh) 具改良轉換效率之太陽能電池
JP2020061941A (ja) 集光型太陽電池
KR20120119807A (ko) 태양 전지
JP2011077295A (ja) 接合型太陽電池
JP7389457B2 (ja) 太陽電池
CN102983208B (zh) 用于iii‑v化合物半导体电池的栅格设计
KR101186529B1 (ko) 태양 전지
Andreev et al. Low‐Bandgap Ge and InAsSbP/InAs‐Based TPV Cells
US20150325733A1 (en) Grid design for iii-v compound semiconductor cell
US20250324845A1 (en) Device and process for forming high durability multijunction solar cells
Laxmi et al. InGaN/Si Hetero-Junction Tandem Solar Cell with Self Tunneling Effect: Proposal & Analysis
Caselli et al. CdSe nanowire solar cells
KR20160117770A (ko) 이중막 패시베이션 구조물 및 이를 포함하는 태양 전지
KR20190085789A (ko) 화합물 태양전지와 화합물 태양전지 모듈
KR20120047585A (ko) 태양 전지
Hrayshat High-voltage solar cells, combining both vertical pn junctions in the graded band-gap layer and horizontal pn junctions in the base layer

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees