JP6025834B2 - 改善された変換効率を有する太陽電池 - Google Patents

改善された変換効率を有する太陽電池 Download PDF

Info

Publication number
JP6025834B2
JP6025834B2 JP2014515909A JP2014515909A JP6025834B2 JP 6025834 B2 JP6025834 B2 JP 6025834B2 JP 2014515909 A JP2014515909 A JP 2014515909A JP 2014515909 A JP2014515909 A JP 2014515909A JP 6025834 B2 JP6025834 B2 JP 6025834B2
Authority
JP
Japan
Prior art keywords
junction
solar cell
doped
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014515909A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014519720A (ja
JP2014519720A5 (enExample
Inventor
マイケル， エー． ハーセ，
マイケル， エー． ハーセ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2014519720A publication Critical patent/JP2014519720A/ja
Publication of JP2014519720A5 publication Critical patent/JP2014519720A5/ja
Application granted granted Critical
Publication of JP6025834B2 publication Critical patent/JP6025834B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
JP2014515909A 2011-06-15 2012-06-12 改善された変換効率を有する太陽電池 Expired - Fee Related JP6025834B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161497172P 2011-06-15 2011-06-15
US61/497,172 2011-06-15
PCT/US2012/042000 WO2012173959A2 (en) 2011-06-15 2012-06-12 Solar cell with improved conversion efficiency

Publications (3)

Publication Number Publication Date
JP2014519720A JP2014519720A (ja) 2014-08-14
JP2014519720A5 JP2014519720A5 (enExample) 2015-07-23
JP6025834B2 true JP6025834B2 (ja) 2016-11-16

Family

ID=46331705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014515909A Expired - Fee Related JP6025834B2 (ja) 2011-06-15 2012-06-12 改善された変換効率を有する太陽電池

Country Status (6)

Country Link
US (1) US9318637B2 (enExample)
EP (1) EP2721647A2 (enExample)
JP (1) JP6025834B2 (enExample)
CN (1) CN103597614B (enExample)
TW (1) TWI570945B (enExample)
WO (1) WO2012173959A2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9478634B2 (en) 2014-11-07 2016-10-25 Globalfoundries Inc. Methods of forming replacement gate structures on finFET devices and the resulting devices
CN117117020A (zh) * 2023-09-15 2023-11-24 晶科能源股份有限公司 太阳能电池及光伏组件

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63194373A (ja) * 1987-02-09 1988-08-11 Fujitsu Ltd 太陽電池
US5248631A (en) 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
JP3457468B2 (ja) * 1995-09-12 2003-10-20 株式会社東芝 多層構造半導体装置
JP2771497B2 (ja) * 1995-11-29 1998-07-02 株式会社日立製作所 太陽電池
JP3657096B2 (ja) * 1997-10-17 2005-06-08 シャープ株式会社 ＧａＡｓ太陽電池
JP2002206168A (ja) * 2000-10-24 2002-07-26 Canon Inc シリコン系薄膜の形成方法、シリコン系半導体層の形成方法及び光起電力素子
US6815736B2 (en) * 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US20020179936A1 (en) * 2001-06-01 2002-12-05 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices which include quaternary chalcogenides
US6660928B1 (en) * 2002-04-02 2003-12-09 Essential Research, Inc. Multi-junction photovoltaic cell
US8067687B2 (en) * 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US7119377B2 (en) * 2004-06-18 2006-10-10 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
WO2007142865A2 (en) * 2006-05-31 2007-12-13 Corning Incorporated Thin film photovoltaic structure and fabrication
US20080110489A1 (en) * 2006-11-14 2008-05-15 Fareed Sepehry-Fard Very High Efficiency Multi-Junction Solar Spectrum Integrator Cells, and the Corresponding System and Method
US20080128020A1 (en) * 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
KR101538817B1 (ko) * 2007-09-25 2015-07-22 퍼스트 솔라, 인코포레이티드 헤테로접합을 포함하는 광기전 장치
WO2009067347A1 (en) * 2007-11-20 2009-05-28 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Lattice matched multi- junction photovoltaic and optoelectronic devices
RU2485626C2 (ru) * 2007-12-21 2013-06-20 Квалкомм Мемс Текнолоджис, Инк. Многопереходные фотогальванические элементы
WO2009151979A2 (en) * 2008-06-09 2009-12-17 4Power, Llc High-efficiency solar cell structures and methods
US9722131B2 (en) * 2009-03-16 2017-08-01 The Boeing Company Highly doped layer for tunnel junctions in solar cells
US10505062B2 (en) * 2009-07-09 2019-12-10 Faquir Chand Jain High efficiency tandem solar cells and a method for fabricating same
AU2010278623B2 (en) * 2009-07-29 2015-09-03 Aton Optronics Inc Solar cell and method of fabrication thereof

Also Published As

Publication number Publication date
WO2012173959A3 (en) 2013-05-16
CN103597614B (zh) 2017-03-01
JP2014519720A (ja) 2014-08-14
TWI570945B (zh) 2017-02-11
US20140124022A1 (en) 2014-05-08
EP2721647A2 (en) 2014-04-23
US9318637B2 (en) 2016-04-19
WO2012173959A2 (en) 2012-12-20
TW201306288A (zh) 2013-02-01
CN103597614A (zh) 2014-02-19

Similar Documents

Publication Publication Date Title
US9520517B2 (en) Solar cell
JP5479574B2 (ja) ナノワイヤを有する多接合光電池
CA2623192C (en) Photovoltaic cells
US20120305059A1 (en) Photon recycling in an optoelectronic device
US10861992B2 (en) Perovskite solar cells for space
US10811551B2 (en) Tandem solar cell including metal disk array
US20120318324A1 (en) Laterally Arranged Multiple-Bandgap Solar Cells
KR20120088719A (ko) 개선된 광전지
JP5481665B2 (ja) 多接合型太陽電池
JP2020061941A (ja) 集光型太陽電池
JP6025834B2 (ja) 改善された変換効率を有する太陽電池
KR101186529B1 (ko) 태양 전지
Licht High Efficiency Solar Cells (What are the highest solar energy conversion efficiencies?)
EP4646061A2 (en) Device and process for forming high durability multijunction solar cells
KR101979843B1 (ko) 태양전지
RU106443U1 (ru) Полупроводниковая многопереходная структура
Khvostikov et al. Narrow Bandgap GaAs and InGaAsSb/GaSb based cells for mechanically stacked tandems and TPV converters
Laxmi et al. InGaN/Si Hetero-Junction Tandem Solar Cell with Self Tunneling Effect: Proposal & Analysis
Alam et al. Performance Maximization of Hydrogenated Amorphous Silicon Multijunction PV Cell Incorporating GaAs Junction
Choudhary et al. C-si Passivated Contact Solar Cell With Optimized Efficiency Of 23.50% In AM1. 5G Environment
KR20160117770A (ko) 이중막 패시베이션 구조물 및 이를 포함하는 태양 전지
JP2000332268A (ja) 薄膜多結晶シリコン、それを用いた太陽電池及び薄膜多結晶シリコンの製造方法
Siddiqui et al. A double gate MOS structure for solar photo-voltaic application
JPH03253081A (ja) 光起電力素子
Ho et al. Numerical modeling of axial junction compositionally graded In x Ga 1− x N nanorod solar cells

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150603

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150603

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160511

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160913

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161011

R150 Certificate of patent or registration of utility model

Ref document number: 6025834

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees