JP5479574B2 - ナノワイヤを有する多接合光電池 - Google Patents
ナノワイヤを有する多接合光電池 Download PDFInfo
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- 239000002070 nanowire Substances 0.000 title claims description 126
- 239000000758 substrate Substances 0.000 claims description 86
- 239000012535 impurity Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000001657 homoepitaxy Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 20
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 18
- 239000002245 particle Substances 0.000 description 15
- 230000002441 reversible effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
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- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- -1 GaN Chemical class 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Description
Claims (15)
- 光を電気エネルギーに変換する多接合光電池であって、
前記多接合光電池は、面(31)を有する基板(3)と、ホール(10)を有する誘電体層(8)とを備え、
第1PN接合が前記基板(3)内に形成されるように前記基板(3)の前記面(31)の領域(4)に不純物が添加され、
前記基板(3)の前記面(31)の前記不純物添加領域(4)は前記ホール(10)の中心にあり、
ナノワイヤ(2)の長手方向により規定される幾何学的軸が前記不純物添加領域(4)の中心を通って延びるように、前記不純物添加領域(4)が前記基板(3)内に位置する場所で前記ナノワイヤ(2)が前記基板(3)の前記面(31)に配置され、
第2PN接合が前記ナノワイヤ(2)に形成され且つ前記第1PN接合と直列に接続する
ことを特徴とする多接合光電池。 - 前記誘電体層(8)内のホール(10)は20nmから200nmの範囲内の直径を有することを特徴とする請求項1に記載の多接合光電池。
- 前記第2PN接合(12)は前記ナノワイヤ(2)内に形成されることを特徴とする請求項1又は2に記載の多接合光電池。
- 前記不純物添加領域(4)はヘテロ接合、イオン注入、ドーパント拡散及びホモエピタキシのうちの何れか1つによって形成されることを特徴とする請求項1乃至3の何れか1項に記載の多接合光電池。
- 前記ナノワイヤ(2)は前記不純物添加領域(4)に直接に接触していることを特徴とする請求項1乃至4の何れか1項に記載の多接合光電池。
- 前記ナノワイヤ(2)は前記不純物添加領域(4)から成長することを特徴とする請求項1乃至5の何れか1項に記載の多接合光電池。
- 前記ナノワイヤ(2)は前記不純物添加領域(4)とエピタキシャル関係にあることを特徴とする請求項1乃至6の何れか1項に記載の多接合光電池。
- 前記第1PN接合(11)と前記第2PN接合(12)との間に第3PN接合(13)が配置されることを特徴とする請求項1乃至7の何れか1項に記載の多接合光電池。
- 前記面(31)の法線方向(N)にあるテーパ形状のシェル(25´´)と前記ナノワイヤ(2)との間にPN接合(12´´)が形成されるように、前記ナノワイヤ(2)が前記シェル(25´´)によって取り囲まれていることを特徴とする請求項1乃至8の何れか1項に記載の多接合光電池。
- 前記基板(3)はシリコン又は不純物添加シリコンからなる半導体材料で生成されることを特徴とする請求項1乃至9の何れか1項に記載の多接合光電池。
- 前記基板(3)はゲルマニウム又は不純物添加ゲルマニウムからなる半導体材料で生成されることを特徴とする請求項1乃至10の何れか1項に記載の多接合光電池。
- 前記ナノワイヤ(2)はIII‐V族の半導体材料を含む半導体材料で生成されることを特徴とする請求項1乃至11の何れか1項に記載の多接合光電池。
- III‐V族の材料は前記不純物添加領域(4)を形成するための前記基板(3)へのドーパント原子の拡散源であることを特徴とする請求項1乃至12の何れか1項に記載の多接合光電池。
- 前記基板(3)の前記面が光源(30)に向かって配置されるように構成されることを特徴とする請求項1乃至13の何れか1項に記載の多接合光電池。
- 前記基板(3)の前記面(31)に複数の領域(4、4´´)を有し、前記複数の領域(4、4´´)が前記基板(3)内に別々の第1PN接合(11、11´´)を形成するように各領域に不純物が添加され、複数のナノワイヤ(2、2´´)が前記基板(3)の前記面(31)から成長し、各ナノワイヤ(2、2´´)が別々の第1PN接合(11、11´´)と直列に接続する第2PN接合(12、12´´)を形成するように各ナノワイヤ(2、2´´)が別々の不純物添加領域(4、4´´)の場所にある
ことを特徴とする請求項1乃至14の何れか1項に記載の多接合光電池。
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AU2008264257A1 (en) | 2007-06-19 | 2008-12-24 | Qunano Ab | Nanowire-based solar cell structure |
JP5626847B2 (ja) * | 2010-04-22 | 2014-11-19 | 日本電信電話株式会社 | ナノ構造体およびその製造方法 |
JP2013016787A (ja) * | 2011-06-08 | 2013-01-24 | Nissan Motor Co Ltd | 太陽電池およびその製造方法 |
GB201113464D0 (en) | 2011-08-03 | 2011-09-21 | Sunflake As | Nanostructure, nanostructure fabrication method and photovoltaic cell incorporating a nanostructure |
GB201211038D0 (en) * | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
US10090292B2 (en) * | 2012-07-06 | 2018-10-02 | Qunano Ab | Radial nanowire Esaki diode devices and methods |
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CN103050564B (zh) * | 2012-12-21 | 2016-04-06 | 北京邮电大学 | 一种基于多节纳米线径向pn结的太阳能电池及制备方法 |
SE537287C2 (sv) * | 2013-06-05 | 2015-03-24 | Sol Voltaics Ab | En solcellsstruktur och en metod för tillverkning av densamma |
WO2014199462A1 (ja) * | 2013-06-12 | 2014-12-18 | 株式会社日立製作所 | 太陽電池セルおよびその製造方法 |
GB2517186A (en) * | 2013-08-14 | 2015-02-18 | Norwegian University Of Science And Technology | Radial P-N junction nanowire solar cells |
FR3011381B1 (fr) * | 2013-09-30 | 2017-12-08 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
EP3016148A1 (en) * | 2014-10-28 | 2016-05-04 | Sol Voltaics AB | Dual layer photovoltaic device |
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JP7103027B2 (ja) * | 2018-07-30 | 2022-07-20 | 富士通株式会社 | 化合物半導体装置、化合物半導体装置の製造方法、発電装置及び電源装置 |
CN109616553B (zh) * | 2018-11-22 | 2020-06-30 | 中南大学 | 一种新型纤锌矿GaAs核壳纳米线光电探测器的制备方法 |
CN111162141A (zh) * | 2019-12-20 | 2020-05-15 | 燕山大学 | 一种多结纳米线太阳能电池的制备方法 |
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US8952354B2 (en) | 2015-02-10 |
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