CN103597614B - 具有改善的转换效率的太阳能电池 - Google Patents

具有改善的转换效率的太阳能电池 Download PDF

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Publication number
CN103597614B
CN103597614B CN201280029340.6A CN201280029340A CN103597614B CN 103597614 B CN103597614 B CN 103597614B CN 201280029340 A CN201280029340 A CN 201280029340A CN 103597614 B CN103597614 B CN 103597614B
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CN
China
Prior art keywords
junction
solar cell
layer
semiconductor
current spreading
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Expired - Fee Related
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CN201280029340.6A
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English (en)
Chinese (zh)
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CN103597614A (zh
Inventor
M·A·哈泽
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of CN103597614A publication Critical patent/CN103597614A/zh
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Publication of CN103597614B publication Critical patent/CN103597614B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
CN201280029340.6A 2011-06-15 2012-06-12 具有改善的转换效率的太阳能电池 Expired - Fee Related CN103597614B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161497172P 2011-06-15 2011-06-15
US61/497,172 2011-06-15
PCT/US2012/042000 WO2012173959A2 (en) 2011-06-15 2012-06-12 Solar cell with improved conversion efficiency

Publications (2)

Publication Number Publication Date
CN103597614A CN103597614A (zh) 2014-02-19
CN103597614B true CN103597614B (zh) 2017-03-01

Family

ID=46331705

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280029340.6A Expired - Fee Related CN103597614B (zh) 2011-06-15 2012-06-12 具有改善的转换效率的太阳能电池

Country Status (6)

Country Link
US (1) US9318637B2 (enExample)
EP (1) EP2721647A2 (enExample)
JP (1) JP6025834B2 (enExample)
CN (1) CN103597614B (enExample)
TW (1) TWI570945B (enExample)
WO (1) WO2012173959A2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9478634B2 (en) 2014-11-07 2016-10-25 Globalfoundries Inc. Methods of forming replacement gate structures on finFET devices and the resulting devices
CN117117020A (zh) * 2023-09-15 2023-11-24 晶科能源股份有限公司 太阳能电池及光伏组件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100116942A1 (en) * 2008-06-09 2010-05-13 Fitzgerald Eugene A High-efficiency solar cell structures
US20110005570A1 (en) * 2009-07-09 2011-01-13 Faquir Chand Jain High efficiency tandem solar cells and a method for fabricating same
CN101999177A (zh) * 2007-12-21 2011-03-30 高通Mems科技公司 多接面光伏电池

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JPS63194373A (ja) * 1987-02-09 1988-08-11 Fujitsu Ltd 太陽電池
US5248631A (en) 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
JP3457468B2 (ja) * 1995-09-12 2003-10-20 株式会社東芝 多層構造半導体装置
JP2771497B2 (ja) * 1995-11-29 1998-07-02 株式会社日立製作所 太陽電池
JP3657096B2 (ja) * 1997-10-17 2005-06-08 シャープ株式会社 ＧａＡｓ太陽電池
JP2002206168A (ja) * 2000-10-24 2002-07-26 Canon Inc シリコン系薄膜の形成方法、シリコン系半導体層の形成方法及び光起電力素子
US6815736B2 (en) * 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US20020179936A1 (en) * 2001-06-01 2002-12-05 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices which include quaternary chalcogenides
US6660928B1 (en) * 2002-04-02 2003-12-09 Essential Research, Inc. Multi-junction photovoltaic cell
US8067687B2 (en) * 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US7119377B2 (en) * 2004-06-18 2006-10-10 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
WO2007142865A2 (en) * 2006-05-31 2007-12-13 Corning Incorporated Thin film photovoltaic structure and fabrication
US20080110489A1 (en) * 2006-11-14 2008-05-15 Fareed Sepehry-Fard Very High Efficiency Multi-Junction Solar Spectrum Integrator Cells, and the Corresponding System and Method
US20080128020A1 (en) * 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
KR101538817B1 (ko) * 2007-09-25 2015-07-22 퍼스트 솔라, 인코포레이티드 헤테로접합을 포함하는 광기전 장치
WO2009067347A1 (en) * 2007-11-20 2009-05-28 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Lattice matched multi- junction photovoltaic and optoelectronic devices
US9722131B2 (en) * 2009-03-16 2017-08-01 The Boeing Company Highly doped layer for tunnel junctions in solar cells
AU2010278623B2 (en) * 2009-07-29 2015-09-03 Aton Optronics Inc Solar cell and method of fabrication thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101999177A (zh) * 2007-12-21 2011-03-30 高通Mems科技公司 多接面光伏电池
US20100116942A1 (en) * 2008-06-09 2010-05-13 Fitzgerald Eugene A High-efficiency solar cell structures
US20110005570A1 (en) * 2009-07-09 2011-01-13 Faquir Chand Jain High efficiency tandem solar cells and a method for fabricating same

Also Published As

Publication number Publication date
JP6025834B2 (ja) 2016-11-16
WO2012173959A3 (en) 2013-05-16
JP2014519720A (ja) 2014-08-14
TWI570945B (zh) 2017-02-11
US20140124022A1 (en) 2014-05-08
EP2721647A2 (en) 2014-04-23
US9318637B2 (en) 2016-04-19
WO2012173959A2 (en) 2012-12-20
TW201306288A (zh) 2013-02-01
CN103597614A (zh) 2014-02-19

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Granted publication date: 20170301

Termination date: 20210612