JP2009283822A - 半導体レーザ及びその製造方法 - Google Patents

半導体レーザ及びその製造方法 Download PDF

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Publication number
JP2009283822A
JP2009283822A JP2008136513A JP2008136513A JP2009283822A JP 2009283822 A JP2009283822 A JP 2009283822A JP 2008136513 A JP2008136513 A JP 2008136513A JP 2008136513 A JP2008136513 A JP 2008136513A JP 2009283822 A JP2009283822 A JP 2009283822A
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Japan
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layer
type
carrier concentration
type inp
semiconductor laser
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Pending
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JP2008136513A
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English (en)
Japanese (ja)
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JP2009283822A5 (enExample
Inventor
Toru Takiguchi
透 瀧口
Yuichiro Okunuki
雄一郎 奥貫
Takeshi Sakaino
剛 境野
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2008136513A priority Critical patent/JP2009283822A/ja
Priority to US12/198,152 priority patent/US7835413B2/en
Priority to CN2009100027060A priority patent/CN101593930B/zh
Publication of JP2009283822A publication Critical patent/JP2009283822A/ja
Publication of JP2009283822A5 publication Critical patent/JP2009283822A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2008136513A 2008-05-26 2008-05-26 半導体レーザ及びその製造方法 Pending JP2009283822A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008136513A JP2009283822A (ja) 2008-05-26 2008-05-26 半導体レーザ及びその製造方法
US12/198,152 US7835413B2 (en) 2008-05-26 2008-08-26 Semiconductor laser
CN2009100027060A CN101593930B (zh) 2008-05-26 2009-01-19 半导体激光器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008136513A JP2009283822A (ja) 2008-05-26 2008-05-26 半導体レーザ及びその製造方法

Publications (2)

Publication Number Publication Date
JP2009283822A true JP2009283822A (ja) 2009-12-03
JP2009283822A5 JP2009283822A5 (enExample) 2011-04-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008136513A Pending JP2009283822A (ja) 2008-05-26 2008-05-26 半導体レーザ及びその製造方法

Country Status (3)

Country Link
US (1) US7835413B2 (enExample)
JP (1) JP2009283822A (enExample)
CN (1) CN101593930B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011134863A (ja) * 2009-12-24 2011-07-07 Mitsubishi Electric Corp 半導体光素子および集積型半導体光素子
JP2021044521A (ja) * 2019-09-13 2021-03-18 住友電工デバイス・イノベーション株式会社 光半導体素子およびその製造方法
WO2021200552A1 (ja) * 2020-04-02 2021-10-07 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置
JP7080414B1 (ja) * 2021-06-17 2022-06-03 三菱電機株式会社 光半導体素子及びその製造方法
JPWO2023100214A1 (enExample) * 2021-11-30 2023-06-08

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101888060B (zh) * 2010-06-02 2011-10-19 中国科学院半导体研究所 异质掩埋激光器的制作方法
JP5697907B2 (ja) * 2010-06-25 2015-04-08 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9520695B2 (en) * 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
JP6375960B2 (ja) * 2015-01-20 2018-08-22 三菱電機株式会社 光半導体装置
CN107046227B (zh) * 2017-05-16 2019-11-22 厦门市芯诺通讯科技有限公司 一种bcb掩埋高速dfb半导体激光器的制备方法
CN107154580B (zh) * 2017-06-12 2019-06-07 陕西源杰半导体技术有限公司 一种小发散角激光器及其制备工艺
CN110176507B (zh) * 2019-05-31 2020-08-14 厦门市三安集成电路有限公司 一种台面pin的钝化结构和光电二极管及其制备方法
US12489274B2 (en) * 2020-01-22 2025-12-02 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device
JP6942261B1 (ja) * 2020-01-28 2021-09-29 三菱電機株式会社 光半導体装置の製造方法
JP7330128B2 (ja) * 2020-04-02 2023-08-21 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722691A (ja) * 1993-06-30 1995-01-24 Mitsubishi Electric Corp 半導体レーザとその製造方法
JP2003060311A (ja) * 2001-08-21 2003-02-28 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及びその製造方法
JP2007035789A (ja) * 2005-07-25 2007-02-08 Mitsubishi Electric Corp 半導体光素子及びその製造方法
JP2008053649A (ja) * 2006-08-28 2008-03-06 Mitsubishi Electric Corp 埋め込み型半導体レーザ

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JPH0513882A (ja) 1990-11-16 1993-01-22 Furukawa Electric Co Ltd:The ワイドバンドギヤツプ材料をｐｎ電流阻止層に用いた半導体光素子
JPH0548210A (ja) * 1991-08-09 1993-02-26 Mitsubishi Electric Corp 半導体レーザ装置
JP2980435B2 (ja) 1991-09-12 1999-11-22 株式会社東芝 半導体装置
JP2699888B2 (ja) 1994-09-20 1998-01-19 日本電気株式会社 埋め込み型ｐ型基板半導体レーザ
JP3386261B2 (ja) 1994-12-05 2003-03-17 三菱電機株式会社 光半導体装置、及びその製造方法
JP3360962B2 (ja) 1995-03-15 2003-01-07 株式会社東芝 半導体レーザ
JP2776375B2 (ja) 1996-06-20 1998-07-16 日本電気株式会社 半導体レーザ
US6664605B1 (en) * 2000-03-31 2003-12-16 Triquint Technology Holding Co. Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs
EP1300917A1 (en) * 2001-10-03 2003-04-09 Agilent Technologies, Inc. (a Delaware corporation) Semiconductor device with current confinement structure
US20050141578A1 (en) * 2003-06-20 2005-06-30 Benoit Reid Laser diode structure with blocking layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722691A (ja) * 1993-06-30 1995-01-24 Mitsubishi Electric Corp 半導体レーザとその製造方法
JP2003060311A (ja) * 2001-08-21 2003-02-28 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及びその製造方法
JP2007035789A (ja) * 2005-07-25 2007-02-08 Mitsubishi Electric Corp 半導体光素子及びその製造方法
JP2008053649A (ja) * 2006-08-28 2008-03-06 Mitsubishi Electric Corp 埋め込み型半導体レーザ

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011134863A (ja) * 2009-12-24 2011-07-07 Mitsubishi Electric Corp 半導体光素子および集積型半導体光素子
JP2021044521A (ja) * 2019-09-13 2021-03-18 住友電工デバイス・イノベーション株式会社 光半導体素子およびその製造方法
JP7306779B2 (ja) 2019-09-13 2023-07-11 住友電工デバイス・イノベーション株式会社 光半導体素子およびその製造方法
US11961948B2 (en) 2019-09-13 2024-04-16 Sumitomo Electric Device Innovations, Inc. Optical semiconductor device
WO2021200552A1 (ja) * 2020-04-02 2021-10-07 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置
JP2021163927A (ja) * 2020-04-02 2021-10-11 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置
JP7421989B2 (ja) 2020-04-02 2024-01-25 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置
JP7080414B1 (ja) * 2021-06-17 2022-06-03 三菱電機株式会社 光半導体素子及びその製造方法
WO2022264347A1 (ja) * 2021-06-17 2022-12-22 三菱電機株式会社 光半導体素子及びその製造方法
JPWO2023100214A1 (enExample) * 2021-11-30 2023-06-08
JP7612050B2 (ja) 2021-11-30 2025-01-10 三菱電機株式会社 半導体レーザ及び半導体レーザ製造方法

Also Published As

Publication number Publication date
CN101593930A (zh) 2009-12-02
CN101593930B (zh) 2011-07-06
US7835413B2 (en) 2010-11-16
US20090290611A1 (en) 2009-11-26

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