JP2011511443A5 - - Google Patents

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Publication number
JP2011511443A5
JP2011511443A5 JP2010544569A JP2010544569A JP2011511443A5 JP 2011511443 A5 JP2011511443 A5 JP 2011511443A5 JP 2010544569 A JP2010544569 A JP 2010544569A JP 2010544569 A JP2010544569 A JP 2010544569A JP 2011511443 A5 JP2011511443 A5 JP 2011511443A5
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JP
Japan
Prior art keywords
active region
radiation
region
radiation receiver
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010544569A
Other languages
English (en)
Japanese (ja)
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JP2011511443A (ja
Filing date
Publication date
Priority claimed from DE102008006987A external-priority patent/DE102008006987A1/de
Application filed filed Critical
Publication of JP2011511443A publication Critical patent/JP2011511443A/ja
Publication of JP2011511443A5 publication Critical patent/JP2011511443A5/ja
Pending legal-status Critical Current

Links

JP2010544569A 2008-01-31 2008-12-17 放射受光器およびその製造方法 Pending JP2011511443A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008006987A DE102008006987A1 (de) 2008-01-31 2008-01-31 Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
PCT/DE2008/002126 WO2009094966A2 (de) 2008-01-31 2008-12-17 Strahlungsempfänger und verfahren zur herstellung eines strahlungsempfängers

Publications (2)

Publication Number Publication Date
JP2011511443A JP2011511443A (ja) 2011-04-07
JP2011511443A5 true JP2011511443A5 (enExample) 2012-02-09

Family

ID=40719994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010544569A Pending JP2011511443A (ja) 2008-01-31 2008-12-17 放射受光器およびその製造方法

Country Status (8)

Country Link
US (1) US8659107B2 (enExample)
EP (1) EP2238624B1 (enExample)
JP (1) JP2011511443A (enExample)
KR (1) KR20100109563A (enExample)
CN (1) CN101933142B (enExample)
DE (1) DE102008006987A1 (enExample)
TW (1) TWI396293B (enExample)
WO (1) WO2009094966A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008006987A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
US8816461B2 (en) * 2011-09-13 2014-08-26 The Boeing Company Dichromatic photodiodes
JP2013120880A (ja) * 2011-12-08 2013-06-17 Technical Research & Development Institute Ministry Of Defence 光検知素子及び光検知素子の製造方法
KR101456376B1 (ko) 2013-04-24 2014-10-31 한국과학기술원 조립식 왕복 지지체를 가지는 진공 단열체의 구조
CN103247638B (zh) * 2013-04-27 2015-08-05 中国科学院苏州纳米技术与纳米仿生研究所 红外探测器及其制作方法
US11158754B1 (en) * 2013-08-09 2021-10-26 Hrl Laboratories, Llc Back-to-back dual band p-CB-n
WO2016069960A1 (en) * 2014-10-29 2016-05-06 Digital Direct Ir Inc. Spherical detector arrays implemented using passive detector structures for thermal imaging applications
DE102015013514B4 (de) * 2015-10-20 2024-04-18 Azur Space Solar Power Gmbh Optischer Empfängerbaustein
US10964862B2 (en) * 2016-09-30 2021-03-30 Sensor Electronic Technology, Inc. Semiconductor heterostructure with multiple active regions
DE102018111319A1 (de) 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP7243071B2 (ja) 2018-08-01 2023-03-22 富士通株式会社 赤外線検出器及びこれを用いた赤外線撮像装置

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DE102004037020B4 (de) 2003-09-30 2021-10-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsdetektor zur Detektion von Strahlung gemäß einer vorgegebenen spektralen Empfindlichkeitsverteilung
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DE102005001280B4 (de) 2004-09-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsdetektor
EP1643565B1 (de) * 2004-09-30 2020-03-04 OSRAM Opto Semiconductors GmbH Strahlungsdetektor
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DE102005043918B4 (de) * 2005-05-30 2014-12-04 Osram Opto Semiconductors Gmbh Detektoranordnung und Verfahren zur Bestimmung spektraler Anteile in einer auf eine Detektoranordnung einfallenden Strahlung
DE102006015788A1 (de) 2006-01-27 2007-09-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102008006987A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
DE102008016100A1 (de) 2008-03-28 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Strahlungsdetektor und Verfahren zur Herstellung einer Mehrzahl von Detektorelementen
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