JP2014107446A5 - - Google Patents

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Publication number
JP2014107446A5
JP2014107446A5 JP2012260067A JP2012260067A JP2014107446A5 JP 2014107446 A5 JP2014107446 A5 JP 2014107446A5 JP 2012260067 A JP2012260067 A JP 2012260067A JP 2012260067 A JP2012260067 A JP 2012260067A JP 2014107446 A5 JP2014107446 A5 JP 2014107446A5
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JP
Japan
Prior art keywords
semiconductor region
region
semiconductor
hole
photodiode array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012260067A
Other languages
English (en)
Japanese (ja)
Other versions
JP6068955B2 (ja
JP2014107446A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2012260067A external-priority patent/JP6068955B2/ja
Priority to JP2012260067A priority Critical patent/JP6068955B2/ja
Priority to US14/646,406 priority patent/US10461115B2/en
Priority to PCT/JP2013/081801 priority patent/WO2014084215A1/ja
Priority to DE112013005685.2T priority patent/DE112013005685T5/de
Priority to CN201380050908.7A priority patent/CN104685631B/zh
Priority to TW102143589A priority patent/TWI589028B/zh
Publication of JP2014107446A publication Critical patent/JP2014107446A/ja
Publication of JP2014107446A5 publication Critical patent/JP2014107446A5/ja
Publication of JP6068955B2 publication Critical patent/JP6068955B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012260067A 2012-11-28 2012-11-28 フォトダイオードアレイ Active JP6068955B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012260067A JP6068955B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ
CN201380050908.7A CN104685631B (zh) 2012-11-28 2013-11-26 光电二极管阵列
PCT/JP2013/081801 WO2014084215A1 (ja) 2012-11-28 2013-11-26 フォトダイオードアレイ
DE112013005685.2T DE112013005685T5 (de) 2012-11-28 2013-11-26 Fotodiodenanordnung
US14/646,406 US10461115B2 (en) 2012-11-28 2013-11-26 Photodiode array
TW102143589A TWI589028B (zh) 2012-11-28 2013-11-28 Photo diode array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012260067A JP6068955B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ

Publications (3)

Publication Number Publication Date
JP2014107446A JP2014107446A (ja) 2014-06-09
JP2014107446A5 true JP2014107446A5 (enExample) 2015-09-10
JP6068955B2 JP6068955B2 (ja) 2017-01-25

Family

ID=50827851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012260067A Active JP6068955B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ

Country Status (6)

Country Link
US (1) US10461115B2 (enExample)
JP (1) JP6068955B2 (enExample)
CN (1) CN104685631B (enExample)
DE (1) DE112013005685T5 (enExample)
TW (1) TWI589028B (enExample)
WO (1) WO2014084215A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015061041A (ja) * 2013-09-20 2015-03-30 株式会社東芝 放射線検出器および放射線検出装置
JP7090620B2 (ja) * 2017-08-09 2022-06-24 株式会社カネカ 光電変換素子および光電変換装置
CN111052402B (zh) 2017-09-13 2023-06-06 株式会社钟化 光电转换元件和光电转换装置
EP3664161A1 (en) 2017-11-15 2020-06-10 Kaneka Corporation Photoelectric conversion device
TWI895997B (zh) * 2024-02-21 2025-09-01 台亞半導體股份有限公司 感光晶片及其製造方法與感光模組

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6541755B1 (en) * 1998-11-25 2003-04-01 Ricoh Company, Ltd. Near field optical probe and manufacturing method thereof
JP2001318155A (ja) * 2000-02-28 2001-11-16 Toshiba Corp 放射線検出器、およびｘ線ｃｔ装置
GB2392307B8 (en) 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
JP2004057507A (ja) * 2002-07-29 2004-02-26 Toshiba Corp Ｘ線検出装置、貫通電極の製造方法及びｘ線断層撮影装置
US6853046B2 (en) * 2002-09-24 2005-02-08 Hamamatsu Photonics, K.K. Photodiode array and method of making the same
WO2004030102A1 (ja) * 2002-09-24 2004-04-08 Hamamatsu Photonics K.K. フォトダイオードアレイ及びその製造方法
JP4440554B2 (ja) * 2002-09-24 2010-03-24 浜松ホトニクス株式会社 半導体装置
JP4220808B2 (ja) * 2003-03-10 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7655999B2 (en) * 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US20050275750A1 (en) * 2004-06-09 2005-12-15 Salman Akram Wafer-level packaged microelectronic imagers and processes for wafer-level packaging
GB2449853B (en) * 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
US7791159B2 (en) * 2007-10-30 2010-09-07 Panasonic Corporation Solid-state imaging device and method for fabricating the same
JP4808760B2 (ja) * 2008-11-19 2011-11-02 浜松ホトニクス株式会社 放射線検出器の製造方法
JP5709435B2 (ja) * 2010-08-23 2015-04-30 キヤノン株式会社 撮像モジュール及びカメラ
JP5791461B2 (ja) * 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP6068954B2 (ja) * 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ

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