JP2014107446A - フォトダイオードアレイ - Google Patents
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- JP2014107446A JP2014107446A JP2012260067A JP2012260067A JP2014107446A JP 2014107446 A JP2014107446 A JP 2014107446A JP 2012260067 A JP2012260067 A JP 2012260067A JP 2012260067 A JP2012260067 A JP 2012260067A JP 2014107446 A JP2014107446 A JP 2014107446A
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- 239000000758 substrate Substances 0.000 claims abstract description 68
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- 239000012535 impurity Substances 0.000 claims description 26
- 238000001514 detection method Methods 0.000 abstract description 19
- 238000000034 method Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000002591 computed tomography Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910014323 Lanthanum(III) bromide Inorganic materials 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- XKUYOJZZLGFZTC-UHFFFAOYSA-K lanthanum(iii) bromide Chemical compound Br[La](Br)Br XKUYOJZZLGFZTC-UHFFFAOYSA-K 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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Abstract
【解決手段】半導体基板2に形成された複数のフォトダイオードPD1を備えるフォトダイオードアレイ1であって、フォトダイオードPD1のそれぞれは、半導体基板2に設けられた第1導電型の第1半導体領域3と、所定領域を囲むように第1半導体領域3に対して面21側に設けられ、第1半導体領域3と共に光検出領域を構成する第2導電型の第2半導体領域5と、第1半導体領域3及び所定領域を通るように面21と面22との間を貫通する貫通孔9A内に設けられ、第2半導体領域5と電気的に接続された貫通電極81aと、を有し、貫通孔9Aは、面21から面22に向かって拡がった部分を有している。
【選択図】図3
Description
図1に示されるように、フォトダイオードアレイ1は、例えばCT装置等に用いられる。フォトダイオードアレイ1は、半導体基板2に形成された複数のフォトダイオードPD1を備えている。
第1半導体領域3:厚さ50〜625μm/不純物濃度5×1011〜5×1015cm−3
第3半導体領域4:厚さ1.0〜10μm/不純物濃度1×1018〜1×1020cm−3
第2半導体領域5:厚さ0.01〜3.0μm/不純物濃度1×1018〜1×1020cm−3
第4半導体領域6:厚さ1.0〜10μm/不純物濃度1×1018〜1×1020cm−3
第5半導体領域7:厚さ1.0〜620μm/不純物濃度1×1018〜1×1020cm−3
次に、フォトダイオードアレイ1の製造方法の一例について説明する。
図13に示されるように、CT装置100は、前述のフォトダイオードアレイ1と、シンチレータ101と、実装基板102と、を具備している。
Claims (6)
- 半導体基板に形成された複数のフォトダイオードを備えるフォトダイオードアレイであって、
前記フォトダイオードのそれぞれは、
前記半導体基板に設けられた第1導電型の第1半導体領域と、
所定領域を囲むように前記第1半導体領域に対して前記半導体基板の一方の面側に設けられ、前記第1半導体領域と共に光検出領域を構成する第2導電型の第2半導体領域と、
前記第1半導体領域及び前記所定領域を通るように前記一方の面と前記半導体基板の他方の面との間を貫通する貫通孔内に設けられ、前記第2半導体領域と電気的に接続された貫通電極と、を有し、
前記貫通孔は、前記一方の面から前記他方の面に向かって拡がった部分を含んでいる、フォトダイオードアレイ。 - 前記所定領域には、前記貫通孔が通り前記第1半導体領域の不純物濃度よりも高い不純物濃度を有する前記第1導電型の第3半導体領域が存在し、
前記第2半導体領域と前記第3半導体領域とは、離間しており、
前記第2半導体領域と前記第3半導体領域との間には、前記第3半導体領域を囲むように前記第1半導体領域の一部が存在している、請求項1記載のフォトダイオードアレイ。 - 前記一方の面側の前記貫通孔の開口の縁と前記第3半導体領域の外縁との間隔は、前記第3半導体領域の外縁と前記第2半導体領域の内縁との間隔よりも大きい、請求項2記載のフォトダイオードアレイ。
- 前記第2半導体領域の内縁は、前記半導体基板の厚さ方向から見た場合に、前記他方の面側の前記貫通孔の開口を囲んでいる、請求項1〜3のいずれか一項記載のフォトダイオードアレイ。
- 前記フォトダイオードのそれぞれは、前記一方の面上に形成され、前記第2半導体領域と前記貫通電極とを電気的に接続させるコンタクト電極を含んでおり、
前記コンタクト電極の外縁は、前記半導体基板の厚さ方向から見た場合に、前記他方の面側の前記貫通孔の開口を囲んでいる、請求項1〜4のいずれか一項記載のフォトダイオードアレイ。 - 前記一方の面側の前記貫通孔の開口は、円形状を呈している、請求項1〜5のいずれか一項記載のフォトダイオードアレイ。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012260067A JP6068955B2 (ja) | 2012-11-28 | 2012-11-28 | フォトダイオードアレイ |
US14/646,406 US10461115B2 (en) | 2012-11-28 | 2013-11-26 | Photodiode array |
CN201380050908.7A CN104685631B (zh) | 2012-11-28 | 2013-11-26 | 光电二极管阵列 |
DE112013005685.2T DE112013005685T5 (de) | 2012-11-28 | 2013-11-26 | Fotodiodenanordnung |
PCT/JP2013/081801 WO2014084215A1 (ja) | 2012-11-28 | 2013-11-26 | フォトダイオードアレイ |
TW102143589A TWI589028B (zh) | 2012-11-28 | 2013-11-28 | Photo diode array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012260067A JP6068955B2 (ja) | 2012-11-28 | 2012-11-28 | フォトダイオードアレイ |
Publications (3)
Publication Number | Publication Date |
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JP2014107446A true JP2014107446A (ja) | 2014-06-09 |
JP2014107446A5 JP2014107446A5 (ja) | 2015-09-10 |
JP6068955B2 JP6068955B2 (ja) | 2017-01-25 |
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JP2012260067A Active JP6068955B2 (ja) | 2012-11-28 | 2012-11-28 | フォトダイオードアレイ |
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US (1) | US10461115B2 (ja) |
JP (1) | JP6068955B2 (ja) |
CN (1) | CN104685631B (ja) |
DE (1) | DE112013005685T5 (ja) |
TW (1) | TWI589028B (ja) |
WO (1) | WO2014084215A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019031030A1 (ja) * | 2017-08-09 | 2019-02-14 | 株式会社カネカ | 光電変換素子および光電変換装置 |
WO2019053959A1 (ja) * | 2017-09-13 | 2019-03-21 | 株式会社カネカ | 光電変換素子および光電変換装置 |
US11402262B2 (en) | 2017-11-15 | 2022-08-02 | Kaneka Corporation | Photoelectric conversion device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015061041A (ja) * | 2013-09-20 | 2015-03-30 | 株式会社東芝 | 放射線検出器および放射線検出装置 |
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2012
- 2012-11-28 JP JP2012260067A patent/JP6068955B2/ja active Active
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- 2013-11-26 WO PCT/JP2013/081801 patent/WO2014084215A1/ja active Application Filing
- 2013-11-26 CN CN201380050908.7A patent/CN104685631B/zh active Active
- 2013-11-26 US US14/646,406 patent/US10461115B2/en active Active
- 2013-11-26 DE DE112013005685.2T patent/DE112013005685T5/de active Pending
- 2013-11-28 TW TW102143589A patent/TWI589028B/zh not_active IP Right Cessation
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JP7090620B2 (ja) | 2017-08-09 | 2022-06-24 | 株式会社カネカ | 光電変換素子および光電変換装置 |
US11508866B2 (en) | 2017-08-09 | 2022-11-22 | Kaneka Corporation | Photoelectric conversion element and photoelectric conversion device |
WO2019053959A1 (ja) * | 2017-09-13 | 2019-03-21 | 株式会社カネカ | 光電変換素子および光電変換装置 |
US11125612B2 (en) | 2017-09-13 | 2021-09-21 | Kaneka Corporation | Photoelectric conversion element and photoelectric conversion device |
US11402262B2 (en) | 2017-11-15 | 2022-08-02 | Kaneka Corporation | Photoelectric conversion device |
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WO2014084215A1 (ja) | 2014-06-05 |
TWI589028B (zh) | 2017-06-21 |
US10461115B2 (en) | 2019-10-29 |
DE112013005685T5 (de) | 2015-09-24 |
US20150340402A1 (en) | 2015-11-26 |
JP6068955B2 (ja) | 2017-01-25 |
CN104685631A (zh) | 2015-06-03 |
CN104685631B (zh) | 2018-02-16 |
TW201436289A (zh) | 2014-09-16 |
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