TWI589028B - Photo diode array - Google Patents

Photo diode array Download PDF

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Publication number
TWI589028B
TWI589028B TW102143589A TW102143589A TWI589028B TW I589028 B TWI589028 B TW I589028B TW 102143589 A TW102143589 A TW 102143589A TW 102143589 A TW102143589 A TW 102143589A TW I589028 B TWI589028 B TW I589028B
Authority
TW
Taiwan
Prior art keywords
semiconductor region
semiconductor
region
hole
photodiode array
Prior art date
Application number
TW102143589A
Other languages
English (en)
Chinese (zh)
Other versions
TW201436289A (zh
Inventor
山中辰己
阪本明
細川暢郎
Original Assignee
濱松赫德尼古斯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 濱松赫德尼古斯股份有限公司 filed Critical 濱松赫德尼古斯股份有限公司
Publication of TW201436289A publication Critical patent/TW201436289A/zh
Application granted granted Critical
Publication of TWI589028B publication Critical patent/TWI589028B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW102143589A 2012-11-28 2013-11-28 Photo diode array TWI589028B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012260067A JP6068955B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ

Publications (2)

Publication Number Publication Date
TW201436289A TW201436289A (zh) 2014-09-16
TWI589028B true TWI589028B (zh) 2017-06-21

Family

ID=50827851

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102143589A TWI589028B (zh) 2012-11-28 2013-11-28 Photo diode array

Country Status (6)

Country Link
US (1) US10461115B2 (enExample)
JP (1) JP6068955B2 (enExample)
CN (1) CN104685631B (enExample)
DE (1) DE112013005685T5 (enExample)
TW (1) TWI589028B (enExample)
WO (1) WO2014084215A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015061041A (ja) * 2013-09-20 2015-03-30 株式会社東芝 放射線検出器および放射線検出装置
EP3651213A4 (en) * 2017-08-09 2020-05-20 Kaneka Corporation PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE
WO2019053959A1 (ja) * 2017-09-13 2019-03-21 株式会社カネカ 光電変換素子および光電変換装置
WO2019097838A1 (ja) 2017-11-15 2019-05-23 株式会社カネカ 光電変換装置
TWI895997B (zh) * 2024-02-21 2025-09-01 台亞半導體股份有限公司 感光晶片及其製造方法與感光模組
JP2026087857A (ja) * 2024-11-18 2026-05-28 浜松ホトニクス株式会社 光検出素子、及び光検出素子の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040129992A1 (en) * 2002-09-24 2004-07-08 Hamamatsu Photonics K.K. Photodiode array and method of making the same
US20090108391A1 (en) * 2007-10-30 2009-04-30 Toshihiro Kuriyama Solid-state imaging device and method for fabricating the same

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
US6541755B1 (en) * 1998-11-25 2003-04-01 Ricoh Company, Ltd. Near field optical probe and manufacturing method thereof
JP2001318155A (ja) * 2000-02-28 2001-11-16 Toshiba Corp 放射線検出器、およびｘ線ｃｔ装置
GB2392307B8 (en) 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
JP2004057507A (ja) * 2002-07-29 2004-02-26 Toshiba Corp Ｘ線検出装置、貫通電極の製造方法及びｘ線断層撮影装置
JP4440554B2 (ja) * 2002-09-24 2010-03-24 浜松ホトニクス株式会社 半導体装置
AU2003268667A1 (en) 2002-09-24 2004-04-19 Hamamatsu Photonics K.K. Photodiode array and method for manufacturing same
JP4220808B2 (ja) * 2003-03-10 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7655999B2 (en) * 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US20050275750A1 (en) * 2004-06-09 2005-12-15 Salman Akram Wafer-level packaged microelectronic imagers and processes for wafer-level packaging
GB2449853B (en) * 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
JP4808760B2 (ja) * 2008-11-19 2011-11-02 浜松ホトニクス株式会社 放射線検出器の製造方法
JP5709435B2 (ja) * 2010-08-23 2015-04-30 キヤノン株式会社 撮像モジュール及びカメラ
JP5791461B2 (ja) * 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP6068954B2 (ja) * 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040129992A1 (en) * 2002-09-24 2004-07-08 Hamamatsu Photonics K.K. Photodiode array and method of making the same
US20090108391A1 (en) * 2007-10-30 2009-04-30 Toshihiro Kuriyama Solid-state imaging device and method for fabricating the same

Also Published As

Publication number Publication date
DE112013005685T5 (de) 2015-09-24
WO2014084215A1 (ja) 2014-06-05
US10461115B2 (en) 2019-10-29
JP6068955B2 (ja) 2017-01-25
CN104685631B (zh) 2018-02-16
JP2014107446A (ja) 2014-06-09
TW201436289A (zh) 2014-09-16
US20150340402A1 (en) 2015-11-26
CN104685631A (zh) 2015-06-03

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