JP6068955B2 - フォトダイオードアレイ - Google Patents

フォトダイオードアレイ Download PDF

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Publication number
JP6068955B2
JP6068955B2 JP2012260067A JP2012260067A JP6068955B2 JP 6068955 B2 JP6068955 B2 JP 6068955B2 JP 2012260067 A JP2012260067 A JP 2012260067A JP 2012260067 A JP2012260067 A JP 2012260067A JP 6068955 B2 JP6068955 B2 JP 6068955B2
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JP
Japan
Prior art keywords
semiconductor region
semiconductor
hole
region
photodiode array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012260067A
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English (en)
Japanese (ja)
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JP2014107446A5 (enExample
JP2014107446A (ja
Inventor
辰己 山中
辰己 山中
明 坂本
坂本　　明
暢郎 細川
暢郎 細川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2012260067A priority Critical patent/JP6068955B2/ja
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to US14/646,406 priority patent/US10461115B2/en
Priority to CN201380050908.7A priority patent/CN104685631B/zh
Priority to PCT/JP2013/081801 priority patent/WO2014084215A1/ja
Priority to DE112013005685.2T priority patent/DE112013005685T5/de
Priority to TW102143589A priority patent/TWI589028B/zh
Publication of JP2014107446A publication Critical patent/JP2014107446A/ja
Publication of JP2014107446A5 publication Critical patent/JP2014107446A5/ja
Application granted granted Critical
Publication of JP6068955B2 publication Critical patent/JP6068955B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012260067A 2012-11-28 2012-11-28 フォトダイオードアレイ Active JP6068955B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012260067A JP6068955B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ
CN201380050908.7A CN104685631B (zh) 2012-11-28 2013-11-26 光电二极管阵列
PCT/JP2013/081801 WO2014084215A1 (ja) 2012-11-28 2013-11-26 フォトダイオードアレイ
DE112013005685.2T DE112013005685T5 (de) 2012-11-28 2013-11-26 Fotodiodenanordnung
US14/646,406 US10461115B2 (en) 2012-11-28 2013-11-26 Photodiode array
TW102143589A TWI589028B (zh) 2012-11-28 2013-11-28 Photo diode array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012260067A JP6068955B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ

Publications (3)

Publication Number Publication Date
JP2014107446A JP2014107446A (ja) 2014-06-09
JP2014107446A5 JP2014107446A5 (enExample) 2015-09-10
JP6068955B2 true JP6068955B2 (ja) 2017-01-25

Family

ID=50827851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012260067A Active JP6068955B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ

Country Status (6)

Country Link
US (1) US10461115B2 (enExample)
JP (1) JP6068955B2 (enExample)
CN (1) CN104685631B (enExample)
DE (1) DE112013005685T5 (enExample)
TW (1) TWI589028B (enExample)
WO (1) WO2014084215A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015061041A (ja) * 2013-09-20 2015-03-30 株式会社東芝 放射線検出器および放射線検出装置
JP7090620B2 (ja) * 2017-08-09 2022-06-24 株式会社カネカ 光電変換素子および光電変換装置
CN111052402B (zh) 2017-09-13 2023-06-06 株式会社钟化 光电转换元件和光电转换装置
EP3664161A1 (en) 2017-11-15 2020-06-10 Kaneka Corporation Photoelectric conversion device
TWI895997B (zh) * 2024-02-21 2025-09-01 台亞半導體股份有限公司 感光晶片及其製造方法與感光模組

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6541755B1 (en) * 1998-11-25 2003-04-01 Ricoh Company, Ltd. Near field optical probe and manufacturing method thereof
JP2001318155A (ja) * 2000-02-28 2001-11-16 Toshiba Corp 放射線検出器、およびｘ線ｃｔ装置
GB2392307B8 (en) 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
JP2004057507A (ja) * 2002-07-29 2004-02-26 Toshiba Corp Ｘ線検出装置、貫通電極の製造方法及びｘ線断層撮影装置
US6853046B2 (en) * 2002-09-24 2005-02-08 Hamamatsu Photonics, K.K. Photodiode array and method of making the same
WO2004030102A1 (ja) * 2002-09-24 2004-04-08 Hamamatsu Photonics K.K. フォトダイオードアレイ及びその製造方法
JP4440554B2 (ja) * 2002-09-24 2010-03-24 浜松ホトニクス株式会社 半導体装置
JP4220808B2 (ja) * 2003-03-10 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7655999B2 (en) * 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US20050275750A1 (en) * 2004-06-09 2005-12-15 Salman Akram Wafer-level packaged microelectronic imagers and processes for wafer-level packaging
GB2449853B (en) * 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
US7791159B2 (en) * 2007-10-30 2010-09-07 Panasonic Corporation Solid-state imaging device and method for fabricating the same
JP4808760B2 (ja) * 2008-11-19 2011-11-02 浜松ホトニクス株式会社 放射線検出器の製造方法
JP5709435B2 (ja) * 2010-08-23 2015-04-30 キヤノン株式会社 撮像モジュール及びカメラ
JP5791461B2 (ja) * 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP6068954B2 (ja) * 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ

Also Published As

Publication number Publication date
TWI589028B (zh) 2017-06-21
US10461115B2 (en) 2019-10-29
CN104685631A (zh) 2015-06-03
DE112013005685T5 (de) 2015-09-24
TW201436289A (zh) 2014-09-16
CN104685631B (zh) 2018-02-16
US20150340402A1 (en) 2015-11-26
JP2014107446A (ja) 2014-06-09
WO2014084215A1 (ja) 2014-06-05

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