JP2011511443A - 放射受光器およびその製造方法 - Google Patents

放射受光器およびその製造方法 Download PDF

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Publication number
JP2011511443A
JP2011511443A JP2010544569A JP2010544569A JP2011511443A JP 2011511443 A JP2011511443 A JP 2011511443A JP 2010544569 A JP2010544569 A JP 2010544569A JP 2010544569 A JP2010544569 A JP 2010544569A JP 2011511443 A JP2011511443 A JP 2011511443A
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Prior art keywords
active region
region
radiation
active
radiation receiver
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JP2010544569A
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English (en)
Japanese (ja)
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JP2011511443A5 (enExample
Inventor
ライナー ブーテンダイヒ
レイナー ヴィンディッシュ
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of JP2011511443A publication Critical patent/JP2011511443A/ja
Publication of JP2011511443A5 publication Critical patent/JP2011511443A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
JP2010544569A 2008-01-31 2008-12-17 放射受光器およびその製造方法 Pending JP2011511443A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008006987A DE102008006987A1 (de) 2008-01-31 2008-01-31 Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
PCT/DE2008/002126 WO2009094966A2 (de) 2008-01-31 2008-12-17 Strahlungsempfänger und verfahren zur herstellung eines strahlungsempfängers

Publications (2)

Publication Number Publication Date
JP2011511443A true JP2011511443A (ja) 2011-04-07
JP2011511443A5 JP2011511443A5 (enExample) 2012-02-09

Family

ID=40719994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010544569A Pending JP2011511443A (ja) 2008-01-31 2008-12-17 放射受光器およびその製造方法

Country Status (8)

Country Link
US (1) US8659107B2 (enExample)
EP (1) EP2238624B1 (enExample)
JP (1) JP2011511443A (enExample)
KR (1) KR20100109563A (enExample)
CN (1) CN101933142B (enExample)
DE (1) DE102008006987A1 (enExample)
TW (1) TWI396293B (enExample)
WO (1) WO2009094966A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013062504A (ja) * 2011-09-13 2013-04-04 Boeing Co:The 二色性フォトダイオード
JP2013120880A (ja) * 2011-12-08 2013-06-17 Technical Research & Development Institute Ministry Of Defence 光検知素子及び光検知素子の製造方法
US11070748B2 (en) 2018-08-01 2021-07-20 Fujitsu Limited Infrared detector, infrared imaging apparatus using the same, and controlling method of infrared detector

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008006987A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
KR101456376B1 (ko) 2013-04-24 2014-10-31 한국과학기술원 조립식 왕복 지지체를 가지는 진공 단열체의 구조
CN103247638B (zh) * 2013-04-27 2015-08-05 中国科学院苏州纳米技术与纳米仿生研究所 红外探测器及其制作方法
US11158754B1 (en) * 2013-08-09 2021-10-26 Hrl Laboratories, Llc Back-to-back dual band p-CB-n
US10175114B2 (en) * 2014-10-29 2019-01-08 Digital Direct Ir, Inc. Spherical detector arrays implemented using passive detector structures for thermal imaging applications
DE102015013514B4 (de) * 2015-10-20 2024-04-18 Azur Space Solar Power Gmbh Optischer Empfängerbaustein
US10964862B2 (en) * 2016-09-30 2021-03-30 Sensor Electronic Technology, Inc. Semiconductor heterostructure with multiple active regions
DE102018111319A1 (de) 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

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JPS58105569A (ja) * 1981-12-16 1983-06-23 Matsushita Electric Ind Co Ltd 半導体受光装置
JP2006013531A (ja) * 1998-05-28 2006-01-12 Emcore Corp バイパスダイオードを有する太陽電池
JP2006510200A (ja) * 2002-12-11 2006-03-23 フィニサー コーポレイション 光トランシーバ
JP2006108675A (ja) * 2004-09-30 2006-04-20 Osram Opto Semiconductors Gmbh ビーム検出器
JP2007520071A (ja) * 2004-01-29 2007-07-19 エルヴェーエー・スペース・ソーラー・パワー・ゲーエムベーハー 活性領域を有する半導体構造

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FR2756666B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques
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US7291858B2 (en) * 1999-12-24 2007-11-06 Bae Systems Information And Electronic Systems Integration Inc. QWIP with tunable spectral response
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US20060162768A1 (en) * 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
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DE102006015788A1 (de) * 2006-01-27 2007-09-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
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JPS58105569A (ja) * 1981-12-16 1983-06-23 Matsushita Electric Ind Co Ltd 半導体受光装置
JP2006013531A (ja) * 1998-05-28 2006-01-12 Emcore Corp バイパスダイオードを有する太陽電池
JP2006510200A (ja) * 2002-12-11 2006-03-23 フィニサー コーポレイション 光トランシーバ
JP2007520071A (ja) * 2004-01-29 2007-07-19 エルヴェーエー・スペース・ソーラー・パワー・ゲーエムベーハー 活性領域を有する半導体構造
JP2006108675A (ja) * 2004-09-30 2006-04-20 Osram Opto Semiconductors Gmbh ビーム検出器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013062504A (ja) * 2011-09-13 2013-04-04 Boeing Co:The 二色性フォトダイオード
JP2013120880A (ja) * 2011-12-08 2013-06-17 Technical Research & Development Institute Ministry Of Defence 光検知素子及び光検知素子の製造方法
US11070748B2 (en) 2018-08-01 2021-07-20 Fujitsu Limited Infrared detector, infrared imaging apparatus using the same, and controlling method of infrared detector

Also Published As

Publication number Publication date
TWI396293B (zh) 2013-05-11
US20100258892A1 (en) 2010-10-14
KR20100109563A (ko) 2010-10-08
WO2009094966A3 (de) 2009-10-08
DE102008006987A1 (de) 2009-08-06
EP2238624B1 (de) 2013-06-05
CN101933142B (zh) 2012-08-29
WO2009094966A2 (de) 2009-08-06
TW200941751A (en) 2009-10-01
US8659107B2 (en) 2014-02-25
CN101933142A (zh) 2010-12-29
EP2238624A2 (de) 2010-10-13

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