KR20100109563A - 복사 수신기 및 복사 수신기의 제조 방법 - Google Patents

복사 수신기 및 복사 수신기의 제조 방법 Download PDF

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Publication number
KR20100109563A
KR20100109563A KR1020107019154A KR20107019154A KR20100109563A KR 20100109563 A KR20100109563 A KR 20100109563A KR 1020107019154 A KR1020107019154 A KR 1020107019154A KR 20107019154 A KR20107019154 A KR 20107019154A KR 20100109563 A KR20100109563 A KR 20100109563A
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South Korea
Prior art keywords
active region
region
radiation
active
tunnel
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Ceased
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KR1020107019154A
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English (en)
Korean (ko)
Inventor
라이너 부텐데이츠
레이너 윈디스
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20100109563A publication Critical patent/KR20100109563A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Light Receiving Elements (AREA)
KR1020107019154A 2008-01-31 2008-12-17 복사 수신기 및 복사 수신기의 제조 방법 Ceased KR20100109563A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008006987A DE102008006987A1 (de) 2008-01-31 2008-01-31 Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
DE102008006987.6 2008-01-31

Publications (1)

Publication Number Publication Date
KR20100109563A true KR20100109563A (ko) 2010-10-08

Family

ID=40719994

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107019154A Ceased KR20100109563A (ko) 2008-01-31 2008-12-17 복사 수신기 및 복사 수신기의 제조 방법

Country Status (8)

Country Link
US (1) US8659107B2 (enExample)
EP (1) EP2238624B1 (enExample)
JP (1) JP2011511443A (enExample)
KR (1) KR20100109563A (enExample)
CN (1) CN101933142B (enExample)
DE (1) DE102008006987A1 (enExample)
TW (1) TWI396293B (enExample)
WO (1) WO2009094966A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9243736B2 (en) 2013-04-24 2016-01-26 Korea Advanced Institute Of Science And Technology Structure of vacuum insulator with assembly reciprocating support

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DE102008006987A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
US8816461B2 (en) * 2011-09-13 2014-08-26 The Boeing Company Dichromatic photodiodes
JP2013120880A (ja) * 2011-12-08 2013-06-17 Technical Research & Development Institute Ministry Of Defence 光検知素子及び光検知素子の製造方法
CN103247638B (zh) * 2013-04-27 2015-08-05 中国科学院苏州纳米技术与纳米仿生研究所 红外探测器及其制作方法
US11158754B1 (en) * 2013-08-09 2021-10-26 Hrl Laboratories, Llc Back-to-back dual band p-CB-n
WO2016069960A1 (en) * 2014-10-29 2016-05-06 Digital Direct Ir Inc. Spherical detector arrays implemented using passive detector structures for thermal imaging applications
DE102015013514B4 (de) * 2015-10-20 2024-04-18 Azur Space Solar Power Gmbh Optischer Empfängerbaustein
US10964862B2 (en) * 2016-09-30 2021-03-30 Sensor Electronic Technology, Inc. Semiconductor heterostructure with multiple active regions
DE102018111319A1 (de) 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP7243071B2 (ja) 2018-08-01 2023-03-22 富士通株式会社 赤外線検出器及びこれを用いた赤外線撮像装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9243736B2 (en) 2013-04-24 2016-01-26 Korea Advanced Institute Of Science And Technology Structure of vacuum insulator with assembly reciprocating support

Also Published As

Publication number Publication date
TWI396293B (zh) 2013-05-11
EP2238624A2 (de) 2010-10-13
CN101933142B (zh) 2012-08-29
JP2011511443A (ja) 2011-04-07
TW200941751A (en) 2009-10-01
WO2009094966A3 (de) 2009-10-08
EP2238624B1 (de) 2013-06-05
DE102008006987A1 (de) 2009-08-06
US8659107B2 (en) 2014-02-25
US20100258892A1 (en) 2010-10-14
WO2009094966A2 (de) 2009-08-06
CN101933142A (zh) 2010-12-29

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