CN101933142B - 辐射接收器和用于制造辐射接收器的方法 - Google Patents

辐射接收器和用于制造辐射接收器的方法 Download PDF

Info

Publication number
CN101933142B
CN101933142B CN2008801259321A CN200880125932A CN101933142B CN 101933142 B CN101933142 B CN 101933142B CN 2008801259321 A CN2008801259321 A CN 2008801259321A CN 200880125932 A CN200880125932 A CN 200880125932A CN 101933142 B CN101933142 B CN 101933142B
Authority
CN
China
Prior art keywords
active region
region
active
radiation
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008801259321A
Other languages
English (en)
Chinese (zh)
Other versions
CN101933142A (zh
Inventor
赖纳·布滕戴奇
赖纳·温迪施
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN101933142A publication Critical patent/CN101933142A/zh
Application granted granted Critical
Publication of CN101933142B publication Critical patent/CN101933142B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Light Receiving Elements (AREA)
CN2008801259321A 2008-01-31 2008-12-17 辐射接收器和用于制造辐射接收器的方法 Expired - Fee Related CN101933142B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008006987A DE102008006987A1 (de) 2008-01-31 2008-01-31 Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
DE102008006987.6 2008-01-31
PCT/DE2008/002126 WO2009094966A2 (de) 2008-01-31 2008-12-17 Strahlungsempfänger und verfahren zur herstellung eines strahlungsempfängers

Publications (2)

Publication Number Publication Date
CN101933142A CN101933142A (zh) 2010-12-29
CN101933142B true CN101933142B (zh) 2012-08-29

Family

ID=40719994

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801259321A Expired - Fee Related CN101933142B (zh) 2008-01-31 2008-12-17 辐射接收器和用于制造辐射接收器的方法

Country Status (8)

Country Link
US (1) US8659107B2 (enExample)
EP (1) EP2238624B1 (enExample)
JP (1) JP2011511443A (enExample)
KR (1) KR20100109563A (enExample)
CN (1) CN101933142B (enExample)
DE (1) DE102008006987A1 (enExample)
TW (1) TWI396293B (enExample)
WO (1) WO2009094966A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008006987A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
US8816461B2 (en) * 2011-09-13 2014-08-26 The Boeing Company Dichromatic photodiodes
JP2013120880A (ja) * 2011-12-08 2013-06-17 Technical Research & Development Institute Ministry Of Defence 光検知素子及び光検知素子の製造方法
KR101456376B1 (ko) 2013-04-24 2014-10-31 한국과학기술원 조립식 왕복 지지체를 가지는 진공 단열체의 구조
CN103247638B (zh) * 2013-04-27 2015-08-05 中国科学院苏州纳米技术与纳米仿生研究所 红外探测器及其制作方法
US11158754B1 (en) * 2013-08-09 2021-10-26 Hrl Laboratories, Llc Back-to-back dual band p-CB-n
WO2016069960A1 (en) * 2014-10-29 2016-05-06 Digital Direct Ir Inc. Spherical detector arrays implemented using passive detector structures for thermal imaging applications
DE102015013514B4 (de) * 2015-10-20 2024-04-18 Azur Space Solar Power Gmbh Optischer Empfängerbaustein
US10964862B2 (en) * 2016-09-30 2021-03-30 Sensor Electronic Technology, Inc. Semiconductor heterostructure with multiple active regions
DE102018111319A1 (de) 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP7243071B2 (ja) 2018-08-01 2023-03-22 富士通株式会社 赤外線検出器及びこれを用いた赤外線撮像装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58105569A (ja) 1981-12-16 1983-06-23 Matsushita Electric Ind Co Ltd 半導体受光装置
US6091126A (en) * 1996-12-04 2000-07-18 Thomson-Csf Electromagnetic wave detector

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
US4677289A (en) 1984-11-12 1987-06-30 Kabushiki Kaisha Toshiba Color sensor
DE3533146A1 (de) 1985-09-17 1987-03-26 Siemens Ag Farbsensorelement, farbempfindliche sensoranordnung mit derartigen farbsensorelementen, eine anwendung des elements oder der anordnung und ein verfahren zur herstellung eines halbleitermaterials fuer das farbsensorelement
JPS6394125A (ja) * 1986-10-08 1988-04-25 Yamatake Honeywell Co Ltd カラ−センサ
US4894526A (en) * 1987-01-15 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Infrared-radiation detector device
GB2228824A (en) 1989-03-01 1990-09-05 Gen Electric Co Plc Radiation detectors
EP0400399A3 (de) * 1989-05-31 1991-05-29 Siemens Aktiengesellschaft Monolithisch integrierte Photodiode-FET-Kombination
US5518934A (en) 1994-07-21 1996-05-21 Trustees Of Princeton University Method of fabricating multiwavelength infrared focal plane array detector
US5552603A (en) * 1994-09-15 1996-09-03 Martin Marietta Corporation Bias and readout for multicolor quantum well detectors
JP3542965B2 (ja) * 1997-10-16 2004-07-14 カリフォルニア インスティチュート オブ テクノロジー デュアルバンド量子井戸赤外線センシングアレイ
DE69939754D1 (de) * 1998-05-28 2008-11-27 Emcore Corp Solarzelle mit einer integrierten monolithisch gewachsenen Bypassdiode
US7291858B2 (en) * 1999-12-24 2007-11-06 Bae Systems Information And Electronic Systems Integration Inc. QWIP with tunable spectral response
WO2003073517A1 (en) * 2002-02-27 2003-09-04 Midwest Research Institute Monolithic photovoltaic energy conversion device
US20060162768A1 (en) 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US7831152B2 (en) * 2002-06-04 2010-11-09 Finisar Corporation Optical transceiver
US6822991B2 (en) 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
KR100542720B1 (ko) 2003-06-03 2006-01-11 삼성전기주식회사 GaN계 접합 구조
CN1275337C (zh) 2003-09-17 2006-09-13 北京工大智源科技发展有限公司 高效高亮度多有源区隧道再生白光发光二极管
DE102004037020B4 (de) 2003-09-30 2021-10-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsdetektor zur Detektion von Strahlung gemäß einer vorgegebenen spektralen Empfindlichkeitsverteilung
US7271405B2 (en) * 2003-10-14 2007-09-18 Stc.Unm Intersubband detector with avalanche multiplier region
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
US8212285B2 (en) 2004-03-31 2012-07-03 Osram Opto Semiconductors Gmbh Radiation detector
JP2006066456A (ja) 2004-08-24 2006-03-09 Fuji Photo Film Co Ltd 固体撮像素子
DE102005001280B4 (de) 2004-09-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsdetektor
EP1643565B1 (de) * 2004-09-30 2020-03-04 OSRAM Opto Semiconductors GmbH Strahlungsdetektor
DE102005013668B3 (de) 2005-03-14 2006-11-16 Universität Stuttgart Solarzelle
DE102005043918B4 (de) * 2005-05-30 2014-12-04 Osram Opto Semiconductors Gmbh Detektoranordnung und Verfahren zur Bestimmung spektraler Anteile in einer auf eine Detektoranordnung einfallenden Strahlung
DE102006015788A1 (de) 2006-01-27 2007-09-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102008006987A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
DE102008016100A1 (de) 2008-03-28 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Strahlungsdetektor und Verfahren zur Herstellung einer Mehrzahl von Detektorelementen
US7821807B2 (en) * 2008-04-17 2010-10-26 Epir Technologies, Inc. Nonequilibrium photodetectors with single carrier species barriers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58105569A (ja) 1981-12-16 1983-06-23 Matsushita Electric Ind Co Ltd 半導体受光装置
US6091126A (en) * 1996-12-04 2000-07-18 Thomson-Csf Electromagnetic wave detector

Also Published As

Publication number Publication date
TWI396293B (zh) 2013-05-11
EP2238624A2 (de) 2010-10-13
JP2011511443A (ja) 2011-04-07
TW200941751A (en) 2009-10-01
KR20100109563A (ko) 2010-10-08
WO2009094966A3 (de) 2009-10-08
EP2238624B1 (de) 2013-06-05
DE102008006987A1 (de) 2009-08-06
US8659107B2 (en) 2014-02-25
US20100258892A1 (en) 2010-10-14
WO2009094966A2 (de) 2009-08-06
CN101933142A (zh) 2010-12-29

Similar Documents

Publication Publication Date Title
CN101933142B (zh) 辐射接收器和用于制造辐射接收器的方法
US7525083B2 (en) Radiation detector with an epitaxially grown semiconductor body
US9978802B2 (en) Multiband optoelectronic device for colorimetric applications and related manufacturing process
US10497823B2 (en) Light receiving device and method of manufacturing light receiving device
JP6487284B2 (ja) 赤外線センサ素子及びその製造方法
US9685584B2 (en) Light emitting semiconductor component including an absorptive layer
US20130099249A1 (en) Nitride uv light sensors on silicon substrates
KR102108718B1 (ko) 광전자 반도체 칩 및 광전자 반도체 칩들의 제조 방법
CN103515396A (zh) 光电二极管阵列
US10559607B2 (en) Semiconductor device and manufacturing method of semiconductor device
KR101573559B1 (ko) 광전자 복사 검출기 및 다수의 검출 소자를 제조하기 위한 방법
US10510916B2 (en) Component for detecting UV radiation and method for producing a component
US8247881B2 (en) Photodiodes with surface plasmon couplers
US8558339B1 (en) Photo diode array
ITTO20120634A1 (it) Fotorivelatore con canale microfluidico integrato e relativo procedimento di fabbricazione
TWI567893B (zh) 半導體元件之電性接觸結構及半導體元件
JP2014029940A (ja) 光検出器、これを用いた撮像装置、及び光検出器の製造方法
CN115036378A (zh) AlInGaN基单pn结多色探测器及信号检测方法
US20230369365A1 (en) Light receiving element array and manufacturing method therefor
US20180315873A1 (en) Infrared light-receiving device
CN113903826B (zh) 双色宽谱段探测器、双色宽谱段探测器阵列及制作方法
US20240234463A9 (en) Active pixel sensor and method for fabricating an active pixel sensor
KR102648703B1 (ko) 듀얼 포토다이오드 및 이의 제조 방법
KR101639780B1 (ko) 자외선 광 검출 소자
CN120958983A (zh) 传感器、用于制造传感器的方法、电子设备以及用于运行传感器的方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120829

Termination date: 20151217

EXPY Termination of patent right or utility model