TWI396293B - 輻射接收器及其製造方法 - Google Patents

輻射接收器及其製造方法 Download PDF

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Publication number
TWI396293B
TWI396293B TW098101515A TW98101515A TWI396293B TW I396293 B TWI396293 B TW I396293B TW 098101515 A TW098101515 A TW 098101515A TW 98101515 A TW98101515 A TW 98101515A TW I396293 B TWI396293 B TW I396293B
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TW
Taiwan
Prior art keywords
region
active
active region
radiation receiver
tunneling
Prior art date
Application number
TW098101515A
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English (en)
Chinese (zh)
Other versions
TW200941751A (en
Inventor
Rainer Butendeich
Reiner Windisch
Original Assignee
Osram Opto Semiconductors Gmbh
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Publication of TW200941751A publication Critical patent/TW200941751A/zh
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Publication of TWI396293B publication Critical patent/TWI396293B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Light Receiving Elements (AREA)
TW098101515A 2008-01-31 2009-01-16 輻射接收器及其製造方法 TWI396293B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008006987A DE102008006987A1 (de) 2008-01-31 2008-01-31 Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers

Publications (2)

Publication Number Publication Date
TW200941751A TW200941751A (en) 2009-10-01
TWI396293B true TWI396293B (zh) 2013-05-11

Family

ID=40719994

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098101515A TWI396293B (zh) 2008-01-31 2009-01-16 輻射接收器及其製造方法

Country Status (8)

Country Link
US (1) US8659107B2 (enExample)
EP (1) EP2238624B1 (enExample)
JP (1) JP2011511443A (enExample)
KR (1) KR20100109563A (enExample)
CN (1) CN101933142B (enExample)
DE (1) DE102008006987A1 (enExample)
TW (1) TWI396293B (enExample)
WO (1) WO2009094966A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8659107B2 (en) 2008-01-31 2014-02-25 Osram Opto Semiconductors Gmbh Radiation receiver and method of producing a radiation receiver

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US8816461B2 (en) * 2011-09-13 2014-08-26 The Boeing Company Dichromatic photodiodes
JP2013120880A (ja) * 2011-12-08 2013-06-17 Technical Research & Development Institute Ministry Of Defence 光検知素子及び光検知素子の製造方法
KR101456376B1 (ko) 2013-04-24 2014-10-31 한국과학기술원 조립식 왕복 지지체를 가지는 진공 단열체의 구조
CN103247638B (zh) * 2013-04-27 2015-08-05 中国科学院苏州纳米技术与纳米仿生研究所 红外探测器及其制作方法
US11158754B1 (en) * 2013-08-09 2021-10-26 Hrl Laboratories, Llc Back-to-back dual band p-CB-n
WO2016069960A1 (en) * 2014-10-29 2016-05-06 Digital Direct Ir Inc. Spherical detector arrays implemented using passive detector structures for thermal imaging applications
DE102015013514B4 (de) * 2015-10-20 2024-04-18 Azur Space Solar Power Gmbh Optischer Empfängerbaustein
US10964862B2 (en) * 2016-09-30 2021-03-30 Sensor Electronic Technology, Inc. Semiconductor heterostructure with multiple active regions
DE102018111319A1 (de) 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP7243071B2 (ja) 2018-08-01 2023-03-22 富士通株式会社 赤外線検出器及びこれを用いた赤外線撮像装置

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US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
US20050067627A1 (en) * 2003-09-17 2005-03-31 Guangdi Shen High efficiency multi-active layer tunnel regenerated white light emitting diode
US20060162768A1 (en) * 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US20070158659A1 (en) * 2004-01-29 2007-07-12 Rwe Space Solar Power Gmbh Semiconductor Structure Comprising Active Zones
US7271405B2 (en) * 2003-10-14 2007-09-18 Stc.Unm Intersubband detector with avalanche multiplier region

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US20060162768A1 (en) * 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
EP2238624A2 (de) 2010-10-13
CN101933142B (zh) 2012-08-29
JP2011511443A (ja) 2011-04-07
TW200941751A (en) 2009-10-01
KR20100109563A (ko) 2010-10-08
WO2009094966A3 (de) 2009-10-08
EP2238624B1 (de) 2013-06-05
DE102008006987A1 (de) 2009-08-06
US8659107B2 (en) 2014-02-25
US20100258892A1 (en) 2010-10-14
WO2009094966A2 (de) 2009-08-06
CN101933142A (zh) 2010-12-29

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