JP2011511443A - 放射受光器およびその製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H01L31/02—Details
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- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
Claims (15)
- 放射を検出するためにそれぞれ設けられている第1の活性領域(210)および第2の活性領域(220)を備えている半導体ボディ(2)を有し、
− 前記第1の活性領域(210)および前記第2の活性領域(220)が垂直方向に互いに隔てられ、
− 前記第1の活性領域(210)と前記第2の活性領域(220)との間にトンネル領域(24)が配置され、
− 前記トンネル領域(24)がランド(31)に導電接続され、
− 前記ランドが、前記半導体ボディ(2)に外部から電気的に接触するために、前記第1の活性領域(210)と前記第2の活性領域(220)との間に設けられている、
放射受光器。 - 前記半導体ボディ(2)が、前記第1の活性領域(210)とは反対の、前記第2の活性領域(220)の側に、第3の活性領域(230)を備え、
さらなるトンネル領域(25)が、前記第2の活性領域(220)と前記第3の活性領域(230)との間に配置され、さらなるランド(32)に導電接続されている、
請求項1に記載の放射受光器。 - 前記トンネル領域(24)が、相互に異なる導電型を有する2つのトンネル層(241,242)を備えている、
請求項1または2に記載の放射受光器。 - 前記半導体ボディ(2)の放射入射主面(10)が階段状構造であり、
前記放射入射主面(10)の1つの階段面(11,12,13)が活性領域(210,220,230)のそれぞれに関連付けられ、
階段面(11,12,13)のそれぞれが、隣接する2つの活性領域(210,220,230)の間に形成されている、
請求項1〜3のいずれか1項に記載の放射受光器。 - 上から見たときに、少なくとも2つの階段面(11,12,13)が二次元的に横に並んで配置されている、
請求項4に記載の放射受光器。 - 上から見たときに、少なくとも2つの階段面(11,12,13)が部分的に互いに交わっている、
請求項4に記載の放射受光器。 - 前記第1の活性領域(210)が、放射入射主方向において前記第2の活性領域(220)の上流に配置され、
前記第1の活性領域(210)に関連付けられている前記第1の階段面(11)が連続的な構造である、
請求項1〜6のいずれか1項に記載の放射受光器。 - 前記活性領域(210,220,230)のそれぞれが、ピーク波長にて最大の検出値を呈し、
前記ピーク波長が互いに隔てられ、
前記ピーク波長が前記放射入射主方向に高くなっている、
請求項1〜7のいずれか1項に記載の放射受光器。 - 前記活性領域(210,220,230)のそれぞれが、ピーク波長にて最大の検出値を備え、
前記ピーク波長が互いに隔てられ、
少なくとも1つの活性領域(210,220,230)が、前記放射入射主方向において上流に配置されている活性領域(210,220,230)よりも低いピーク波長を有する、
請求項1〜7のいずれか1項に記載の放射受光器。 - 前記活性領域(210,220,230)の少なくとも1つの上流に受動領域(213,223,233)が配置され、
前記受動領域が、その活性領域(210,220,230)に関連付けられている検出スペクトル範囲の短波エッジ部を形成するために設けられている、
請求項1〜9のいずれか1項に記載の放射受光器。 - 前記活性領域(210,220,230)の少なくとも1つがIII−V族化合物半導体材料を含んでいる、
請求項1〜10のいずれか1項に記載の放射受光器。 - カラーセンサ(5)における動作のために設けられ、
前記カラーセンサ(5)が複数のカラーチャネルを備えている、
請求項1〜11のいずれか1項に記載の放射受光器。 - 放射受光器(1)を製造する方法であって、
(a)第1の活性領域(210)および第2の活性領域(220)を備えている半導体ボディ(2)であって、前記活性領域(210,220)のそれぞれが、放射を検出するために設けられ、前記第1の活性領域(210)と前記第2の活性領域(220)との間にトンネル領域(24)が配置されている、半導体ボディ(2)を形成するステップと、
(b)前記第1の活性領域(210)を部分的に除去し、前記トンネル領域(24)を露出させるステップと、
(c)前記トンネル領域(24)の上にランドを形成するステップと、
(d)前記放射受光器(1)を完成させるステップと、
を含んでいる、方法。 - 前記半導体ボディ(2)が成長基板(20)の上にエピタキシャルに形成する、
請求項13に記載の方法。 - 請求項1〜12のいずれか1項に記載の放射受光器(1)が製造される、
請求項13または14に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102008006987A DE102008006987A1 (de) | 2008-01-31 | 2008-01-31 | Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers |
PCT/DE2008/002126 WO2009094966A2 (de) | 2008-01-31 | 2008-12-17 | Strahlungsempfänger und verfahren zur herstellung eines strahlungsempfängers |
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JP2011511443A true JP2011511443A (ja) | 2011-04-07 |
JP2011511443A5 JP2011511443A5 (ja) | 2012-02-09 |
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US (1) | US8659107B2 (ja) |
EP (1) | EP2238624B1 (ja) |
JP (1) | JP2011511443A (ja) |
KR (1) | KR20100109563A (ja) |
CN (1) | CN101933142B (ja) |
DE (1) | DE102008006987A1 (ja) |
TW (1) | TWI396293B (ja) |
WO (1) | WO2009094966A2 (ja) |
Cited By (3)
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JP2013062504A (ja) * | 2011-09-13 | 2013-04-04 | Boeing Co:The | 二色性フォトダイオード |
JP2013120880A (ja) * | 2011-12-08 | 2013-06-17 | Technical Research & Development Institute Ministry Of Defence | 光検知素子及び光検知素子の製造方法 |
US11070748B2 (en) | 2018-08-01 | 2021-07-20 | Fujitsu Limited | Infrared detector, infrared imaging apparatus using the same, and controlling method of infrared detector |
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DE102008006987A1 (de) | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers |
KR101456376B1 (ko) | 2013-04-24 | 2014-10-31 | 한국과학기술원 | 조립식 왕복 지지체를 가지는 진공 단열체의 구조 |
CN103247638B (zh) * | 2013-04-27 | 2015-08-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | 红外探测器及其制作方法 |
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WO2016069960A1 (en) * | 2014-10-29 | 2016-05-06 | Digital Direct Ir Inc. | Spherical detector arrays implemented using passive detector structures for thermal imaging applications |
DE102015013514B4 (de) * | 2015-10-20 | 2024-04-18 | Azur Space Solar Power Gmbh | Optischer Empfängerbaustein |
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- 2008-12-17 EP EP08871711.1A patent/EP2238624B1/de not_active Not-in-force
- 2008-12-17 US US12/746,121 patent/US8659107B2/en not_active Expired - Fee Related
- 2008-12-17 KR KR1020107019154A patent/KR20100109563A/ko not_active Application Discontinuation
- 2008-12-17 CN CN2008801259321A patent/CN101933142B/zh not_active Expired - Fee Related
- 2008-12-17 JP JP2010544569A patent/JP2011511443A/ja active Pending
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JP2013062504A (ja) * | 2011-09-13 | 2013-04-04 | Boeing Co:The | 二色性フォトダイオード |
JP2013120880A (ja) * | 2011-12-08 | 2013-06-17 | Technical Research & Development Institute Ministry Of Defence | 光検知素子及び光検知素子の製造方法 |
US11070748B2 (en) | 2018-08-01 | 2021-07-20 | Fujitsu Limited | Infrared detector, infrared imaging apparatus using the same, and controlling method of infrared detector |
Also Published As
Publication number | Publication date |
---|---|
EP2238624A2 (de) | 2010-10-13 |
EP2238624B1 (de) | 2013-06-05 |
DE102008006987A1 (de) | 2009-08-06 |
US8659107B2 (en) | 2014-02-25 |
WO2009094966A3 (de) | 2009-10-08 |
CN101933142B (zh) | 2012-08-29 |
CN101933142A (zh) | 2010-12-29 |
US20100258892A1 (en) | 2010-10-14 |
TW200941751A (en) | 2009-10-01 |
KR20100109563A (ko) | 2010-10-08 |
WO2009094966A2 (de) | 2009-08-06 |
TWI396293B (zh) | 2013-05-11 |
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