JP2009016825A5 - - Google Patents

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Publication number
JP2009016825A5
JP2009016825A5 JP2008167248A JP2008167248A JP2009016825A5 JP 2009016825 A5 JP2009016825 A5 JP 2009016825A5 JP 2008167248 A JP2008167248 A JP 2008167248A JP 2008167248 A JP2008167248 A JP 2008167248A JP 2009016825 A5 JP2009016825 A5 JP 2009016825A5
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JP
Japan
Prior art keywords
laser diode
diode chip
layer
cladding layer
chip according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008167248A
Other languages
English (en)
Japanese (ja)
Other versions
JP5623007B2 (ja
JP2009016825A (ja
Filing date
Publication date
Priority claimed from DE102007030062A external-priority patent/DE102007030062A1/de
Application filed filed Critical
Publication of JP2009016825A publication Critical patent/JP2009016825A/ja
Publication of JP2009016825A5 publication Critical patent/JP2009016825A5/ja
Application granted granted Critical
Publication of JP5623007B2 publication Critical patent/JP5623007B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008167248A 2007-06-29 2008-06-26 多重ビーム−レーザダイオードとしての構造を有するモノリシック集積型レーザダイオードチップ Active JP5623007B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007030062A DE102007030062A1 (de) 2007-06-29 2007-06-29 Monolithisch integrierter Laserdiodenchip mit einem Aufbau als Mehrfachstrahl-Laserdiode
DE102007030062.1 2007-06-29

Publications (3)

Publication Number Publication Date
JP2009016825A JP2009016825A (ja) 2009-01-22
JP2009016825A5 true JP2009016825A5 (enExample) 2011-07-07
JP5623007B2 JP5623007B2 (ja) 2014-11-12

Family

ID=39537107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008167248A Active JP5623007B2 (ja) 2007-06-29 2008-06-26 多重ビーム−レーザダイオードとしての構造を有するモノリシック集積型レーザダイオードチップ

Country Status (4)

Country Link
US (1) US8194712B2 (enExample)
EP (1) EP2009753A1 (enExample)
JP (1) JP5623007B2 (enExample)
DE (1) DE102007030062A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100244099A1 (en) * 2009-03-31 2010-09-30 Agilent Technolgies, Inc. Double heterojunction bipolar transistor having graded base region
US10203399B2 (en) 2013-11-12 2019-02-12 Big Sky Financial Corporation Methods and apparatus for array based LiDAR systems with reduced interference
US9360554B2 (en) 2014-04-11 2016-06-07 Facet Technology Corp. Methods and apparatus for object detection and identification in a multiple detector lidar array
US10036801B2 (en) 2015-03-05 2018-07-31 Big Sky Financial Corporation Methods and apparatus for increased precision and improved range in a multiple detector LiDAR array
DE102015011635B4 (de) 2015-09-11 2020-10-08 Azur Space Solar Power Gmbh lnfrarot-LED
US9866816B2 (en) 2016-03-03 2018-01-09 4D Intellectual Properties, Llc Methods and apparatus for an active pulsed 4D camera for image acquisition and analysis
WO2021133827A2 (en) 2019-12-24 2021-07-01 Array Photonics, Inc. Stacked semiconductor lasers with controlled spectral emission
US11532924B2 (en) * 2020-07-27 2022-12-20 National Taiwan University Distributed feedback laser array
JP7633815B2 (ja) * 2021-01-29 2025-02-20 浜松ホトニクス株式会社 半導体レーザ素子及びレーザモジュール

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958263A (en) * 1973-11-12 1976-05-18 Bell Telephone Laboratories, Incorporated Stress reduction in algaas-algaasp multilayer structures
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
US5212706A (en) 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
JPH07263791A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 半導体レーザ
US5617437A (en) * 1994-11-24 1997-04-01 Fuji Photo Film Co., Ltd. Semiconductor laser
US5729566A (en) * 1996-06-07 1998-03-17 Picolight Incorporated Light emitting device having an electrical contact through a layer containing oxidized material
EP1051783B1 (de) 1998-01-30 2002-01-09 Osram Opto Semiconductors GmbH & Co. OHG Halbleiterlaser-chip
DE19935998B4 (de) * 1999-07-30 2007-10-18 Osram Opto Semiconductors Gmbh Mehrfach-Halbleiterlaserstruktur mit schmaler Wellenlängenverteilung
JP2001185810A (ja) * 1999-12-24 2001-07-06 Mitsubishi Chemicals Corp 半導体光デバイス装置及びその製造方法
DE10057698A1 (de) * 2000-11-21 2002-06-06 Osram Opto Semiconductors Gmbh Übereinander gestapelte Halbleiter-Diodenlaser
US6628694B2 (en) * 2001-04-23 2003-09-30 Agilent Technologies, Inc. Reliability-enhancing layers for vertical cavity surface emitting lasers
JP2003078205A (ja) * 2001-09-05 2003-03-14 Fuji Photo Film Co Ltd 半導体レーザ素子
US6711195B2 (en) * 2002-02-28 2004-03-23 Agilent Technologies, Inc. Long-wavelength photonic device with GaAsSb quantum-well layer
US20070053396A1 (en) * 2005-08-24 2007-03-08 Nlight Photonics Corporation Semiconductor lasers utilizing AlGaAsP
DE102006010728A1 (de) * 2005-12-05 2007-06-06 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Laservorrichtung
JP4155997B2 (ja) * 2006-03-30 2008-09-24 株式会社日立製作所 半導体レーザ装置

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