JP2011513954A5 - - Google Patents

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Publication number
JP2011513954A5
JP2011513954A5 JP2010547942A JP2010547942A JP2011513954A5 JP 2011513954 A5 JP2011513954 A5 JP 2011513954A5 JP 2010547942 A JP2010547942 A JP 2010547942A JP 2010547942 A JP2010547942 A JP 2010547942A JP 2011513954 A5 JP2011513954 A5 JP 2011513954A5
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JP
Japan
Prior art keywords
layer
growth substrate
epitaxial layer
optoelectronic device
layer sequence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010547942A
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English (en)
Japanese (ja)
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JP2011513954A (ja
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Publication date
Priority claimed from DE102008019268A external-priority patent/DE102008019268A1/de
Application filed filed Critical
Publication of JP2011513954A publication Critical patent/JP2011513954A/ja
Publication of JP2011513954A5 publication Critical patent/JP2011513954A5/ja
Pending legal-status Critical Current

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JP2010547942A 2008-02-29 2009-01-28 オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 Pending JP2011513954A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008011864 2008-02-29
DE102008019268A DE102008019268A1 (de) 2008-02-29 2008-04-17 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
PCT/DE2009/000116 WO2009106028A1 (de) 2008-02-29 2009-01-28 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Publications (2)

Publication Number Publication Date
JP2011513954A JP2011513954A (ja) 2011-04-28
JP2011513954A5 true JP2011513954A5 (enExample) 2012-03-01

Family

ID=40911434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010547942A Pending JP2011513954A (ja) 2008-02-29 2009-01-28 オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法

Country Status (6)

Country Link
US (1) US8711893B2 (enExample)
EP (1) EP2248235B1 (enExample)
JP (1) JP2011513954A (enExample)
DE (1) DE102008019268A1 (enExample)
TW (1) TWI426674B (enExample)
WO (1) WO2009106028A1 (enExample)

Families Citing this family (17)

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EP2243866A1 (en) * 2008-01-16 2010-10-27 National University Corporation Tokyo University of Agriculture and Technology Process for producing laminate comprising al-based group iii nitride single crystal layer, laminate produced by the process, process for producing al-based group iii nitride single crystal substrate using the laminate, and aluminum nitride single crystal substrate
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
DE102010046793B4 (de) 2010-09-28 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierende Halbleiterlaserdiode und Verfahren zu dessen Herstellung
DE102011113775B9 (de) 2011-09-19 2021-10-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
TWI495163B (zh) * 2011-12-09 2015-08-01 中華電信股份有限公司 A method for manufacturing a resonant cavity light emitting diode
EP2618385A1 (de) 2012-01-20 2013-07-24 AZUR SPACE Solar Power GmbH Halbzeug einer Mehrfachsolarzelle und Verfahren zur Herstellung einer Mehrfachsolarzelle
CN103400912B (zh) * 2013-08-22 2015-10-14 南京大学 日盲紫外dbr及其制备方法
US11200997B2 (en) * 2014-02-17 2021-12-14 City Labs, Inc. Semiconductor device with epitaxial liftoff layers for directly converting radioisotope emissions into electrical power
JP6723723B2 (ja) * 2015-10-22 2020-07-15 スタンレー電気株式会社 垂直共振器型発光素子及びその製造方法
GB2549703B (en) * 2016-04-19 2019-11-06 Toshiba Kk An optical device and method for its fabrication
DE102016110790B4 (de) * 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
JP6846730B2 (ja) * 2016-07-22 2021-03-24 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
DE102018002426A1 (de) 2018-03-26 2019-09-26 Azur Space Solar Power Gmbh Stapelförmiges III-V-Halbleiterzeug und Herstellungsverfahren
DE102019106521A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Aufwachsstruktur für ein Strahlung emittierendes Halbleiterbauelement und Strahlung emittierendes Halbleiterbauelement
DE102021132164A1 (de) 2021-12-07 2023-06-07 Osram Opto Semiconductors Gmbh Laserdiodenbauelement und verfahren zur herstellung zumindest eines laserdiodenbauelements
DE102022133588A1 (de) * 2022-12-16 2024-06-27 Ams-Osram International Gmbh Laserbarrenchip und verfahren zum herstellen eines laserbarrenchips
KR102868728B1 (ko) * 2022-12-27 2025-10-17 (재)한국나노기술원 박막형 InGaAs 레이저 셀 제조 방법 및 박막형 InGaAs 레이저 셀

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