JP2011513954A - オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 - Google Patents

オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 Download PDF

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JP2011513954A
JP2011513954A JP2010547942A JP2010547942A JP2011513954A JP 2011513954 A JP2011513954 A JP 2011513954A JP 2010547942 A JP2010547942 A JP 2010547942A JP 2010547942 A JP2010547942 A JP 2010547942A JP 2011513954 A JP2011513954 A JP 2011513954A
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layer
growth substrate
optoelectronic device
epitaxial layer
layer sequence
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JP2011513954A5 (enExample
Inventor
シュテファン アヴラメスク アドリアン
アイヒラー クリストフ
シュトラウス ウーヴェ
ヘルレ フォルカー
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2010547942A 2008-02-29 2009-01-28 オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 Pending JP2011513954A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008011864 2008-02-29
DE102008019268A DE102008019268A1 (de) 2008-02-29 2008-04-17 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
PCT/DE2009/000116 WO2009106028A1 (de) 2008-02-29 2009-01-28 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Publications (2)

Publication Number Publication Date
JP2011513954A true JP2011513954A (ja) 2011-04-28
JP2011513954A5 JP2011513954A5 (enExample) 2012-03-01

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JP2010547942A Pending JP2011513954A (ja) 2008-02-29 2009-01-28 オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法

Country Status (6)

Country Link
US (1) US8711893B2 (enExample)
EP (1) EP2248235B1 (enExample)
JP (1) JP2011513954A (enExample)
DE (1) DE102008019268A1 (enExample)
TW (1) TWI426674B (enExample)
WO (1) WO2009106028A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017084847A (ja) * 2015-10-22 2017-05-18 スタンレー電気株式会社 垂直共振器型発光素子及びその製造方法
JP2017195364A (ja) * 2016-04-19 2017-10-26 株式会社東芝 光デバイスおよびその製作のための方法
JP2018014444A (ja) * 2016-07-22 2018-01-25 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
KR20240104285A (ko) * 2022-12-27 2024-07-04 (재)한국나노기술원 박막형 InGaAs 레이저 셀 제조 방법 및 박막형 InGaAs 레이저 셀

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100138879A (ko) * 2008-01-16 2010-12-31 고꾸리쯔 다이가꾸호우징 도쿄노우코우다이가쿠 Ａｌ계 Ⅲ족 질화물 단결정층을 갖는 적층체의 제조 방법, 그 제법으로 제조되는 적층체, 그 적층체를 사용한 Ａｌ계 Ⅲ족 질화물 단결정 기판의 제조 방법, 및, 질화알루미늄 단결정 기판
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
DE102010046793B4 (de) 2010-09-28 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierende Halbleiterlaserdiode und Verfahren zu dessen Herstellung
DE102011113775B9 (de) 2011-09-19 2021-10-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
TWI495163B (zh) * 2011-12-09 2015-08-01 中華電信股份有限公司 A method for manufacturing a resonant cavity light emitting diode
EP2618385A1 (de) * 2012-01-20 2013-07-24 AZUR SPACE Solar Power GmbH Halbzeug einer Mehrfachsolarzelle und Verfahren zur Herstellung einer Mehrfachsolarzelle
CN103400912B (zh) * 2013-08-22 2015-10-14 南京大学 日盲紫外dbr及其制备方法
US11200997B2 (en) * 2014-02-17 2021-12-14 City Labs, Inc. Semiconductor device with epitaxial liftoff layers for directly converting radioisotope emissions into electrical power
DE102016110790B4 (de) * 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102018002426A1 (de) 2018-03-26 2019-09-26 Azur Space Solar Power Gmbh Stapelförmiges III-V-Halbleiterzeug und Herstellungsverfahren
DE102019106521A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Aufwachsstruktur für ein Strahlung emittierendes Halbleiterbauelement und Strahlung emittierendes Halbleiterbauelement
DE102021132164A1 (de) 2021-12-07 2023-06-07 Osram Opto Semiconductors Gmbh Laserdiodenbauelement und verfahren zur herstellung zumindest eines laserdiodenbauelements
DE102022133588A1 (de) * 2022-12-16 2024-06-27 Ams-Osram International Gmbh Laserbarrenchip und verfahren zum herstellen eines laserbarrenchips

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273399A (ja) * 2002-02-26 2003-09-26 Osram Opto Semiconductors Gmbh 垂直の発光方向を有する放射線を発する半導体デバイス及びその製造方法
JP2005101533A (ja) * 2003-08-20 2005-04-14 Sumitomo Electric Ind Ltd 発光素子およびその製造方法
JP2007080896A (ja) * 2005-09-12 2007-03-29 Sanyo Electric Co Ltd 半導体素子
JP2007521641A (ja) * 2003-12-09 2007-08-02 ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア 表面粗化による高効率の（Ｂ，Ａｌ，Ｇａ，Ｉｎ）Ｎベースの発光ダイオード

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4605942A (en) * 1984-10-09 1986-08-12 At&T Bell Laboratories Multiple wavelength light emitting devices
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
TW398084B (en) * 1998-06-05 2000-07-11 Hewlett Packard Co Multilayered indium-containing nitride buffer layer for nitride epitaxy
US6280523B1 (en) * 1999-02-05 2001-08-28 Lumileds Lighting, U.S., Llc Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
JP3866540B2 (ja) * 2001-07-06 2007-01-10 株式会社東芝 窒化物半導体素子およびその製造方法
US6835957B2 (en) 2002-07-30 2004-12-28 Lumileds Lighting U.S., Llc III-nitride light emitting device with p-type active layer
TWI240969B (en) * 2003-06-06 2005-10-01 Sanken Electric Co Ltd Nitride semiconductor device and method for manufacturing same
US20060273324A1 (en) * 2003-07-28 2006-12-07 Makoto Asai Light-emitting diode and process for producing the same
US20070099321A1 (en) * 2003-12-05 2007-05-03 Mamoru Miyachi Method for fabricating semiconductor laser device
DE102004062290A1 (de) * 2004-12-23 2006-07-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterchips
DE102005035722B9 (de) * 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102005052358A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
DE102006023685A1 (de) * 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR100756841B1 (ko) 2006-03-13 2007-09-07 서울옵토디바이스주식회사 ＡｌｘＧａ１－ｘＮ 버퍼층을 갖는 발광 다이오드 및 이의제조 방법
DE102006061167A1 (de) * 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273399A (ja) * 2002-02-26 2003-09-26 Osram Opto Semiconductors Gmbh 垂直の発光方向を有する放射線を発する半導体デバイス及びその製造方法
JP2005101533A (ja) * 2003-08-20 2005-04-14 Sumitomo Electric Ind Ltd 発光素子およびその製造方法
JP2007521641A (ja) * 2003-12-09 2007-08-02 ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア 表面粗化による高効率の（Ｂ，Ａｌ，Ｇａ，Ｉｎ）Ｎベースの発光ダイオード
JP2007080896A (ja) * 2005-09-12 2007-03-29 Sanyo Electric Co Ltd 半導体素子

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017084847A (ja) * 2015-10-22 2017-05-18 スタンレー電気株式会社 垂直共振器型発光素子及びその製造方法
JP2017195364A (ja) * 2016-04-19 2017-10-26 株式会社東芝 光デバイスおよびその製作のための方法
JP2018014444A (ja) * 2016-07-22 2018-01-25 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
KR20240104285A (ko) * 2022-12-27 2024-07-04 (재)한국나노기술원 박막형 InGaAs 레이저 셀 제조 방법 및 박막형 InGaAs 레이저 셀
KR102868728B1 (ko) * 2022-12-27 2025-10-17 (재)한국나노기술원 박막형 InGaAs 레이저 셀 제조 방법 및 박막형 InGaAs 레이저 셀

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Publication number Publication date
TWI426674B (zh) 2014-02-11
DE102008019268A1 (de) 2009-09-03
US20110051771A1 (en) 2011-03-03
TW200947816A (en) 2009-11-16
EP2248235B1 (de) 2017-12-20
US8711893B2 (en) 2014-04-29
EP2248235A1 (de) 2010-11-10
WO2009106028A1 (de) 2009-09-03

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