DE102008019268A1 - Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements - Google Patents

Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements Download PDF

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Publication number
DE102008019268A1
DE102008019268A1 DE102008019268A DE102008019268A DE102008019268A1 DE 102008019268 A1 DE102008019268 A1 DE 102008019268A1 DE 102008019268 A DE102008019268 A DE 102008019268A DE 102008019268 A DE102008019268 A DE 102008019268A DE 102008019268 A1 DE102008019268 A1 DE 102008019268A1
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Germany
Prior art keywords
growth substrate
layer
optoelectronic component
layer sequence
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008019268A
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German (de)
English (en)
Inventor
Adrian Dr. Avramescu
Christoph Dr. Eichler
Uwe Dr. Strauss
Volker Dr. Härle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102008019268A priority Critical patent/DE102008019268A1/de
Priority to PCT/DE2009/000116 priority patent/WO2009106028A1/de
Priority to EP09715490.0A priority patent/EP2248235B1/de
Priority to US12/920,312 priority patent/US8711893B2/en
Priority to JP2010547942A priority patent/JP2011513954A/ja
Priority to TW098103997A priority patent/TWI426674B/zh
Publication of DE102008019268A1 publication Critical patent/DE102008019268A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE102008019268A 2008-02-29 2008-04-17 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements Withdrawn DE102008019268A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE102008019268A DE102008019268A1 (de) 2008-02-29 2008-04-17 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
PCT/DE2009/000116 WO2009106028A1 (de) 2008-02-29 2009-01-28 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
EP09715490.0A EP2248235B1 (de) 2008-02-29 2009-01-28 Kantenemittierender halbleiterlaser und verfahren zur herstellung eines kantenemittierenden halbleiterlasers
US12/920,312 US8711893B2 (en) 2008-02-29 2009-01-28 Optoelectronic component and method for producing an optoelectronic component
JP2010547942A JP2011513954A (ja) 2008-02-29 2009-01-28 オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法
TW098103997A TWI426674B (zh) 2008-02-29 2009-02-09 光電組件及光電組件之製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008011864.8 2008-02-29
DE102008011864 2008-02-29
DE102008019268A DE102008019268A1 (de) 2008-02-29 2008-04-17 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements

Publications (1)

Publication Number Publication Date
DE102008019268A1 true DE102008019268A1 (de) 2009-09-03

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Application Number Title Priority Date Filing Date
DE102008019268A Withdrawn DE102008019268A1 (de) 2008-02-29 2008-04-17 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements

Country Status (6)

Country Link
US (1) US8711893B2 (enExample)
EP (1) EP2248235B1 (enExample)
JP (1) JP2011513954A (enExample)
DE (1) DE102008019268A1 (enExample)
TW (1) TWI426674B (enExample)
WO (1) WO2009106028A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012048962A3 (de) * 2010-09-28 2013-01-10 Osram Opto Semiconductors Gmbh Kantenemittierende halbleiterlaserdiode und verfahren zu dessen herstellung
EP2618385A1 (de) * 2012-01-20 2013-07-24 AZUR SPACE Solar Power GmbH Halbzeug einer Mehrfachsolarzelle und Verfahren zur Herstellung einer Mehrfachsolarzelle
DE102018002426A1 (de) 2018-03-26 2019-09-26 Azur Space Solar Power Gmbh Stapelförmiges III-V-Halbleiterzeug und Herstellungsverfahren
DE102021132164A1 (de) 2021-12-07 2023-06-07 Osram Opto Semiconductors Gmbh Laserdiodenbauelement und verfahren zur herstellung zumindest eines laserdiodenbauelements
DE102022133588A1 (de) * 2022-12-16 2024-06-27 Ams-Osram International Gmbh Laserbarrenchip und verfahren zum herstellen eines laserbarrenchips

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US20110018104A1 (en) * 2008-01-16 2011-01-27 Toru Nagashima METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
DE102011113775B9 (de) 2011-09-19 2021-10-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
TWI495163B (zh) * 2011-12-09 2015-08-01 中華電信股份有限公司 A method for manufacturing a resonant cavity light emitting diode
CN103400912B (zh) * 2013-08-22 2015-10-14 南京大学 日盲紫外dbr及其制备方法
US11200997B2 (en) * 2014-02-17 2021-12-14 City Labs, Inc. Semiconductor device with epitaxial liftoff layers for directly converting radioisotope emissions into electrical power
JP6723723B2 (ja) * 2015-10-22 2020-07-15 スタンレー電気株式会社 垂直共振器型発光素子及びその製造方法
GB2549703B (en) * 2016-04-19 2019-11-06 Toshiba Kk An optical device and method for its fabrication
DE102016110790B4 (de) * 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
JP6846730B2 (ja) * 2016-07-22 2021-03-24 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
DE102019106521A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Aufwachsstruktur für ein Strahlung emittierendes Halbleiterbauelement und Strahlung emittierendes Halbleiterbauelement
KR102868728B1 (ko) * 2022-12-27 2025-10-17 (재)한국나노기술원 박막형 InGaAs 레이저 셀 제조 방법 및 박막형 InGaAs 레이저 셀

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US5374564A (en) 1991-09-18 1994-12-20 Commissariat A L'energie Atomique Process for the production of thin semiconductor material films
WO1998014986A1 (de) 1996-10-01 1998-04-09 Siemens Aktiengesellschaft Verfahren zum trennen zweier materialschichten voneinander und nach diesem verfahren hergestellte elektronische bauelemente
DE19905517A1 (de) * 1998-06-05 1999-12-09 Hewlett Packard Co Mehrschichtige Indium-enthaltende Nitridpufferschicht für die Nitrid-Epitaxie
DE10017757A1 (de) * 1999-06-08 2000-12-21 Agilent Technologies Inc LED auf AlGaInN-Basis mit dicker Epitaxieschicht für eine verbesserte Lichtextraktion
DE19953588C2 (de) * 1999-02-05 2003-08-14 Lumileds Lighting Us Licht-emittierendes Bauelement mit Waferverbindungs-Schnittstelle und Verfahren zu dessen Herstellung
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EP1675189A2 (de) * 2004-12-23 2006-06-28 Osram Opto Semiconductors GmbH Verfahren zur Herstellung eines Halbleiterchips
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Publication number Priority date Publication date Assignee Title
US5374564A (en) 1991-09-18 1994-12-20 Commissariat A L'energie Atomique Process for the production of thin semiconductor material films
WO1998014986A1 (de) 1996-10-01 1998-04-09 Siemens Aktiengesellschaft Verfahren zum trennen zweier materialschichten voneinander und nach diesem verfahren hergestellte elektronische bauelemente
DE19905517A1 (de) * 1998-06-05 1999-12-09 Hewlett Packard Co Mehrschichtige Indium-enthaltende Nitridpufferschicht für die Nitrid-Epitaxie
DE19953588C2 (de) * 1999-02-05 2003-08-14 Lumileds Lighting Us Licht-emittierendes Bauelement mit Waferverbindungs-Schnittstelle und Verfahren zu dessen Herstellung
DE19953609B4 (de) * 1999-02-05 2004-03-04 LumiLeds Lighting, U.S., LLC, San Jose Dickenanpassen von waferverbundenen AlxGayInzN-Strukturen durch Laserschmelzen
DE10017757A1 (de) * 1999-06-08 2000-12-21 Agilent Technologies Inc LED auf AlGaInN-Basis mit dicker Epitaxieschicht für eine verbesserte Lichtextraktion
DE112004001401T5 (de) * 2003-07-28 2006-06-14 Toyoda Gosei Co., Ltd., Nishikasugai Lichtemissionsdiode und Verfahren zu deren Herstellung
EP1675189A2 (de) * 2004-12-23 2006-06-28 Osram Opto Semiconductors GmbH Verfahren zur Herstellung eines Halbleiterchips
DE102005035722A1 (de) * 2005-07-29 2007-02-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102005052358A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
DE102006061167A1 (de) * 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012048962A3 (de) * 2010-09-28 2013-01-10 Osram Opto Semiconductors Gmbh Kantenemittierende halbleiterlaserdiode und verfahren zu dessen herstellung
US8995490B2 (en) 2010-09-28 2015-03-31 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser diode and method for producing the same
CN105186286A (zh) * 2010-09-28 2015-12-23 奥斯兰姆奥普托半导体有限责任公司 边缘发射的半导体激光二极管及其制造方法
CN105186286B (zh) * 2010-09-28 2018-01-23 奥斯兰姆奥普托半导体有限责任公司 边缘发射的半导体激光二极管及其制造方法
EP2618385A1 (de) * 2012-01-20 2013-07-24 AZUR SPACE Solar Power GmbH Halbzeug einer Mehrfachsolarzelle und Verfahren zur Herstellung einer Mehrfachsolarzelle
WO2013107628A3 (de) * 2012-01-20 2013-11-07 Azur Space Solar Power Gmbh Halbzeug einer mehrfachsolarzelle und verfahren zur herstellung einer mehrfachsolarzelle
US9666738B2 (en) 2012-01-20 2017-05-30 Azur Space Solar Power Gmbh Semifinished product of a multi-junction solar cell and method for producing a multi-junction solar cell
DE102018002426A1 (de) 2018-03-26 2019-09-26 Azur Space Solar Power Gmbh Stapelförmiges III-V-Halbleiterzeug und Herstellungsverfahren
WO2019185190A1 (de) 2018-03-26 2019-10-03 Azur Space Solar Power Gmbh Stapelförmiges iii-v-halbleiterzeug und herstellungsverfahren
US11211516B2 (en) 2018-03-26 2021-12-28 Azur Space Solar Power Gmbh Stack-like III-V semiconductor product and production method
DE102021132164A1 (de) 2021-12-07 2023-06-07 Osram Opto Semiconductors Gmbh Laserdiodenbauelement und verfahren zur herstellung zumindest eines laserdiodenbauelements
DE102022133588A1 (de) * 2022-12-16 2024-06-27 Ams-Osram International Gmbh Laserbarrenchip und verfahren zum herstellen eines laserbarrenchips

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WO2009106028A1 (de) 2009-09-03
US8711893B2 (en) 2014-04-29
EP2248235B1 (de) 2017-12-20
US20110051771A1 (en) 2011-03-03
TWI426674B (zh) 2014-02-11
EP2248235A1 (de) 2010-11-10
TW200947816A (en) 2009-11-16

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