JP2004343147A5 - - Google Patents

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Publication number
JP2004343147A5
JP2004343147A5 JP2004242880A JP2004242880A JP2004343147A5 JP 2004343147 A5 JP2004343147 A5 JP 2004343147A5 JP 2004242880 A JP2004242880 A JP 2004242880A JP 2004242880 A JP2004242880 A JP 2004242880A JP 2004343147 A5 JP2004343147 A5 JP 2004343147A5
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JP
Japan
Prior art keywords
nitride semiconductor
semiconductor layer
layer
semiconductor device
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004242880A
Other languages
English (en)
Japanese (ja)
Other versions
JP4356555B2 (ja
JP2004343147A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004242880A priority Critical patent/JP4356555B2/ja
Priority claimed from JP2004242880A external-priority patent/JP4356555B2/ja
Publication of JP2004343147A publication Critical patent/JP2004343147A/ja
Publication of JP2004343147A5 publication Critical patent/JP2004343147A5/ja
Application granted granted Critical
Publication of JP4356555B2 publication Critical patent/JP4356555B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004242880A 1998-03-12 2004-08-23 窒化物半導体素子 Expired - Lifetime JP4356555B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004242880A JP4356555B2 (ja) 1998-03-12 2004-08-23 窒化物半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6023398 1998-03-12
JP2004242880A JP4356555B2 (ja) 1998-03-12 2004-08-23 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6258999A Division JP3622562B2 (ja) 1998-03-12 1999-03-10 窒化物半導体発光ダイオード

Publications (3)

Publication Number Publication Date
JP2004343147A JP2004343147A (ja) 2004-12-02
JP2004343147A5 true JP2004343147A5 (enExample) 2006-04-20
JP4356555B2 JP4356555B2 (ja) 2009-11-04

Family

ID=33542750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004242880A Expired - Lifetime JP4356555B2 (ja) 1998-03-12 2004-08-23 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP4356555B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3839799B2 (ja) 2003-08-06 2006-11-01 ローム株式会社 半導体発光素子
JP2007214384A (ja) * 2006-02-09 2007-08-23 Rohm Co Ltd 窒化物半導体素子
JP5068020B2 (ja) * 2006-02-20 2012-11-07 シャープ株式会社 窒化物半導体発光素子の製造方法
KR101239851B1 (ko) * 2006-03-24 2013-03-06 서울옵토디바이스주식회사 질화갈륨계 화합물 반도체 및 그 제조방법
KR100835116B1 (ko) * 2007-04-16 2008-06-05 삼성전기주식회사 질화물 반도체 발광 소자
RU2369942C1 (ru) 2008-02-21 2009-10-10 Самсунг Электро-Меканикс Ко., Лтд. Светоизлучающий прибор на основе нитридного полупроводника
JP4640427B2 (ja) 2008-03-14 2011-03-02 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の製造方法、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
JP4655103B2 (ja) 2008-04-14 2011-03-23 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
JP4940317B2 (ja) 2010-02-25 2012-05-30 株式会社東芝 半導体発光素子及びその製造方法
KR101140679B1 (ko) 2010-06-08 2012-04-25 서울옵토디바이스주식회사 질화갈륨계 화합물 반도체
JP5613719B2 (ja) * 2010-08-26 2014-10-29 株式会社東芝 半導体発光素子
KR20130079873A (ko) * 2012-01-03 2013-07-11 엘지이노텍 주식회사 발광소자 및 이를 포함하는 조명시스템
JP2014049595A (ja) * 2012-08-31 2014-03-17 Ushio Inc 窒化物半導体素子
JPWO2014178248A1 (ja) 2013-04-30 2017-02-23 シャープ株式会社 窒化物半導体発光素子

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