JP2004343147A5 - - Google Patents

Claims (11)

In the nitride semiconductor device having an active layer between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer, the n-side nitride semiconductor layer includes In in contact with the active layer. An n-side multilayer film in which a first nitride semiconductor layer and a second nitride semiconductor layer having a composition different from that of the first nitride semiconductor layer are stacked, and the first nitride semiconductor layer layer or at least one of the film thickness der 100 angstroms or less of said second nitride semiconductor layer, is,
The p-side nitride semiconductor layer includes a p-side multilayer formed by laminating a third nitride semiconductor layer containing Al and a fourth nitride semiconductor layer having a composition different from that of the third nitride semiconductor. It has a film layer, the third nitride semiconductor layer or the fourth nitride semiconductor device at least one of the thickness of the layers of nitride semiconductor, characterized in der Rukoto 100 angstroms or less. The first nitride semiconductor layer is made of In _X Ga _1-X N (0 <X <1), and the second nitride semiconductor layer is In _Y Ga _1-Y N (0 ≦ Y <1, Y The nitride semiconductor device according to claim 1, comprising <X). The nitride semiconductor device according to claim 1, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are undoped. 3. The nitride semiconductor device according to claim 1, wherein an n-type impurity is doped in one of the first nitride semiconductor layer and the second nitride semiconductor layer. 4. 3. The nitride semiconductor device according to claim 1, wherein both the first nitride semiconductor layer and the second nitride semiconductor layer are doped with an n-type impurity. The third nitride semiconductor layer is Al _a Ga _1-a N (0 <a ≦ 1), and the fourth nitride semiconductor layer is In _b Ga _1-b The nitride semiconductor device according to claim 1, wherein the nitride semiconductor device is made of N (0 ≦ b <1, b <a). The nitride semiconductor device according to claim 1, wherein the p-side multilayer film layer is formed in contact with the active layer. The nitride semiconductor device according to any one of claims 1 to 7, wherein the third nitride semiconductor layer and the fourth nitride semiconductor layer are undoped. 8. The p-type impurity according to claim 1, wherein either one of the third nitride semiconductor layer and the fourth nitride semiconductor layer is doped. Nitride semiconductor device. The nitride semiconductor according to any one of claims 1 to 7, wherein both the third nitride semiconductor layer and the fourth nitride semiconductor layer are doped with a p-type impurity. element. The nitride semiconductor device according to claim 1, wherein the active layer is a nitride semiconductor containing In.