JP2006245165A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006245165A5 JP2006245165A5 JP2005056964A JP2005056964A JP2006245165A5 JP 2006245165 A5 JP2006245165 A5 JP 2006245165A5 JP 2005056964 A JP2005056964 A JP 2005056964A JP 2005056964 A JP2005056964 A JP 2005056964A JP 2006245165 A5 JP2006245165 A5 JP 2006245165A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- iii
- semiconductor light
- compound semiconductor
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Claims (5)
前記活性層の両側にそれぞれ配置された、Ａｌ a Ｉｎ b Ｇａ 1-a-b Ｎ（０＜ａ≦０．２，０＜ｂ≦０．２）からなるＩＩＩ−Ｖ族化合物半導体層と
を備えたことを特徴とする半導体発光素子。 An active layer,
A III-V group compound semiconductor layer made of Al a In b Ga 1-ab N (0 <a ≦ 0.2, 0 <b ≦ 0.2) , disposed on both sides of the active layer, A semiconductor light emitting element characterized by the above.
前記量子井戸層は、５％以上３０％以下のＩｎ組成を有すると共に、０．５ｎｍ以上６ｎｍ以下の厚さを有し、
前記ＩＩＩ−Ｖ族化合物半導体層は、前記量子井戸層より低いＩｎ組成を有すると共に、２ｎｍ以上５００ｎｍ以下の厚さを有する
ことを特徴とする請求項１に記載の半導体発光素子。 The active layer may have a multiple quantum well structure formed by alternately stacking quantum well layers and barrier layers,
The quantum well layer has an In composition of 5% to 30% and a thickness of 0.5 nm to 6 nm.
The semiconductor light emitting element according to claim 1, wherein the III-V compound semiconductor layer has an In composition lower than that of the quantum well layer and has a thickness of 2 nm to 500 nm.
ことを特徴とする請求項１に記載の半導体発光素子。 And one group III-V compound semiconductor layer provided on the side of the active layer, and the active layer other group III-V provided on the side compound semiconductor layer is that it is composed of different compositions The semiconductor light-emitting device according to claim 1.
ことを特徴とする請求項１に記載の半導体発光素子。 The semiconductor light emitting element according to claim 1, wherein the III-V compound semiconductor layer has an inclined structure in which an Al composition and an In composition are changed in a thickness direction.
ことを特徴とする請求項１に記載の半導体発光素子。 The III-V group compound semiconductor layer includes Al w In x Ga 1 -wx N (0 <w <1, 0 <x <1), Al y In z Ga 1-yz N (0 <y The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device has a multiple structure in which layers made of <w, x <z <1) are alternately stacked.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005056964A JP2006245165A (en) | 2005-03-02 | 2005-03-02 | Semiconductor light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005056964A JP2006245165A (en) | 2005-03-02 | 2005-03-02 | Semiconductor light-emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006245165A JP2006245165A (en) | 2006-09-14 |
| JP2006245165A5 true JP2006245165A5 (en) | 2007-09-20 |
Family
ID=37051291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005056964A Pending JP2006245165A (en) | 2005-03-02 | 2005-03-02 | Semiconductor light-emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006245165A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101344181B1 (en) | 2008-01-30 | 2013-12-20 | 엘지전자 주식회사 | Nitride semiconductor device and method for manufacturing the same |
| JP4892618B2 (en) | 2010-02-16 | 2012-03-07 | 株式会社東芝 | Semiconductor light emitting device |
| JP5325171B2 (en) | 2010-07-08 | 2013-10-23 | 株式会社東芝 | Semiconductor light emitting device |
| JP5337862B2 (en) * | 2011-12-19 | 2013-11-06 | 株式会社東芝 | Semiconductor light emitting device |
| JP5554387B2 (en) * | 2012-10-25 | 2014-07-23 | 株式会社東芝 | Semiconductor light emitting device |
| JP6192378B2 (en) | 2013-06-18 | 2017-09-06 | 学校法人 名城大学 | Nitride semiconductor light emitting device |
| JP5764184B2 (en) * | 2013-11-18 | 2015-08-12 | 株式会社東芝 | Semiconductor light emitting device |
| JP7492328B2 (en) | 2019-11-18 | 2024-05-29 | シャープ福山レーザー株式会社 | Image display element and method for manufacturing the image display element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004087762A (en) * | 2002-08-27 | 2004-03-18 | Sony Corp | Nitride-based semiconductor light emitting device |
-
2005
- 2005-03-02 JP JP2005056964A patent/JP2006245165A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2010080955A5 (en) | ||
| JP2006245165A5 (en) | ||
| JP2011258994A5 (en) | ||
| JP2008103721A5 (en) | ||
| JP2008103711A5 (en) | ||
| JP2007281257A5 (en) | ||
| JP2004031770A5 (en) | ||
| JP2007036298A5 (en) | ||
| JP2010098151A5 (en) | ||
| JP2007081449A5 (en) | ||
| JP2004087908A5 (en) | ||
| ATE464658T1 (en) | III-NITRIDE COMPOUND SEMICONDUCTOR LIGHT EISSION DEVICE | |
| CA2528719A1 (en) | Nitride semiconductor light emitting device | |
| JP2010541223A5 (en) | ||
| JP2001168385A5 (en) | ||
| JP2018531514A5 (en) | ||
| JP2004253801A5 (en) | ||
| JP2010040838A5 (en) | ||
| JP2013520823A5 (en) | ||
| JP2011222722A5 (en) | ||
| JP2015149342A5 (en) | ||
| US8294164B2 (en) | Light-emitting device using clad layer consisting of asymmetrical units | |
| JP2006210692A5 (en) | ||
| JP2004343147A5 (en) | ||
| JP2019134153A5 (en) |