JP4356555B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子 Download PDF

Info

Publication number
JP4356555B2
JP4356555B2 JP2004242880A JP2004242880A JP4356555B2 JP 4356555 B2 JP4356555 B2 JP 4356555B2 JP 2004242880 A JP2004242880 A JP 2004242880A JP 2004242880 A JP2004242880 A JP 2004242880A JP 4356555 B2 JP4356555 B2 JP 4356555B2
Authority
JP
Japan
Prior art keywords
nitride semiconductor
layer
semiconductor layer
grown
multilayer film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004242880A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004343147A (ja
JP2004343147A5 (enExample
Inventor
友次 三谷
義典 中河
宏典 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2004242880A priority Critical patent/JP4356555B2/ja
Publication of JP2004343147A publication Critical patent/JP2004343147A/ja
Publication of JP2004343147A5 publication Critical patent/JP2004343147A5/ja
Application granted granted Critical
Publication of JP4356555B2 publication Critical patent/JP4356555B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2004242880A 1998-03-12 2004-08-23 窒化物半導体素子 Expired - Lifetime JP4356555B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004242880A JP4356555B2 (ja) 1998-03-12 2004-08-23 窒化物半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6023398 1998-03-12
JP2004242880A JP4356555B2 (ja) 1998-03-12 2004-08-23 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6258999A Division JP3622562B2 (ja) 1998-03-12 1999-03-10 窒化物半導体発光ダイオード

Publications (3)

Publication Number Publication Date
JP2004343147A JP2004343147A (ja) 2004-12-02
JP2004343147A5 JP2004343147A5 (enExample) 2006-04-20
JP4356555B2 true JP4356555B2 (ja) 2009-11-04

Family

ID=33542750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004242880A Expired - Lifetime JP4356555B2 (ja) 1998-03-12 2004-08-23 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP4356555B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3839799B2 (ja) 2003-08-06 2006-11-01 ローム株式会社 半導体発光素子
JP2007214384A (ja) * 2006-02-09 2007-08-23 Rohm Co Ltd 窒化物半導体素子
JP5068020B2 (ja) * 2006-02-20 2012-11-07 シャープ株式会社 窒化物半導体発光素子の製造方法
KR101239851B1 (ko) * 2006-03-24 2013-03-06 서울옵토디바이스주식회사 질화갈륨계 화합물 반도체 및 그 제조방법
KR100835116B1 (ko) * 2007-04-16 2008-06-05 삼성전기주식회사 질화물 반도체 발광 소자
RU2369942C1 (ru) 2008-02-21 2009-10-10 Самсунг Электро-Меканикс Ко., Лтд. Светоизлучающий прибор на основе нитридного полупроводника
JP4640427B2 (ja) 2008-03-14 2011-03-02 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の製造方法、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
JP4655103B2 (ja) 2008-04-14 2011-03-23 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
JP4940317B2 (ja) 2010-02-25 2012-05-30 株式会社東芝 半導体発光素子及びその製造方法
KR101140679B1 (ko) 2010-06-08 2012-04-25 서울옵토디바이스주식회사 질화갈륨계 화합물 반도체
JP5613719B2 (ja) * 2010-08-26 2014-10-29 株式会社東芝 半導体発光素子
KR20130079873A (ko) * 2012-01-03 2013-07-11 엘지이노텍 주식회사 발광소자 및 이를 포함하는 조명시스템
JP2014049595A (ja) * 2012-08-31 2014-03-17 Ushio Inc 窒化物半導体素子
JPWO2014178248A1 (ja) 2013-04-30 2017-02-23 シャープ株式会社 窒化物半導体発光素子

Also Published As

Publication number Publication date
JP2004343147A (ja) 2004-12-02

Similar Documents

Publication Publication Date Title
JP3622562B2 (ja) 窒化物半導体発光ダイオード
KR100574738B1 (ko) 질화물 반도체 소자
JP3868136B2 (ja) 窒化ガリウム系化合物半導体発光素子
JP3744211B2 (ja) 窒化物半導体素子
JP3460641B2 (ja) 窒化物半導体素子
JP4629178B2 (ja) 窒化物半導体素子
JP3680558B2 (ja) 窒化物半導体素子
JP2001237457A (ja) 発光素子
JPH08228025A (ja) 窒化物半導体発光素子
JP2001168471A (ja) 窒化物半導体発光素子
JP4356555B2 (ja) 窒化物半導体素子
JP2002033512A (ja) 窒化物半導体発光ダイオード
JP2000133883A (ja) 窒化物半導体素子
JP4815732B2 (ja) 窒化物半導体素子
JP3620292B2 (ja) 窒化物半導体素子
JP3275810B2 (ja) 窒化物半導体発光素子
JP3951973B2 (ja) 窒化物半導体素子
JP4622466B2 (ja) 窒化物半導体素子
JP3448196B2 (ja) 窒化物半導体発光素子
JP4085782B2 (ja) 窒化物半導体素子
JP3924973B2 (ja) 窒化物半導体発光素子の製造方法および窒化物半導体発光素子
JP3857417B2 (ja) 窒化物半導体素子
JP4931271B2 (ja) 窒化物半導体素子及びそれを用いた発光装置
JP2000269548A (ja) 窒化物半導体素子
JP3952079B2 (ja) 窒化物半導体発光素子の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060306

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060306

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090714

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090727

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120814

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120814

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120814

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120814

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130814

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term