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半導体レ−ザ
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1988-03-09 |
1989-06-13 |
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1988-03-09 |
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Xerox Corporation |
Quantum well heterostructure lasers with low current density threshold and higher TO values
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1988-03-23 |
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半導体装置
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1988-09-07 |
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1989-01-13 |
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1989-01-19 |
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Hewlett-Packard Company |
High band-gap opto-electronic device
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1989-09-18 |
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Hughes Aircraft Company |
Multiple quantum well superlattice infrared detector with graded conductive band
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1993-12-23 |
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1995-08-22 |
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University Of Houston |
Light emitting devices based on interband transitions in type-II quantum well heterostructures
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1998-02-26 |
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半導体装置
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Super lattice tunnel junctions
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Edge-emitting semiconductor laser chip
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