JP2010157604A5 - - Google Patents

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Publication number
JP2010157604A5
JP2010157604A5 JP2008334869A JP2008334869A JP2010157604A5 JP 2010157604 A5 JP2010157604 A5 JP 2010157604A5 JP 2008334869 A JP2008334869 A JP 2008334869A JP 2008334869 A JP2008334869 A JP 2008334869A JP 2010157604 A5 JP2010157604 A5 JP 2010157604A5
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JP
Japan
Prior art keywords
light emitting
compound semiconductor
manufacturing
range
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008334869A
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English (en)
Japanese (ja)
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JP2010157604A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008334869A priority Critical patent/JP2010157604A/ja
Priority claimed from JP2008334869A external-priority patent/JP2010157604A/ja
Priority to US13/142,143 priority patent/US8580592B2/en
Priority to CN2009801523121A priority patent/CN102265415A/zh
Priority to PCT/JP2009/071023 priority patent/WO2010073957A1/ja
Priority to TW098144772A priority patent/TW201034244A/zh
Publication of JP2010157604A publication Critical patent/JP2010157604A/ja
Publication of JP2010157604A5 publication Critical patent/JP2010157604A5/ja
Pending legal-status Critical Current

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JP2008334869A 2008-12-26 2008-12-26 半導体発光素子の製造方法 Pending JP2010157604A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008334869A JP2010157604A (ja) 2008-12-26 2008-12-26 半導体発光素子の製造方法
US13/142,143 US8580592B2 (en) 2008-12-26 2009-12-17 Method for manufacturing semiconductor light emitting element, and semiconductor light emitting element
CN2009801523121A CN102265415A (zh) 2008-12-26 2009-12-17 半导体发光元件的制造方法以及半导体发光元件
PCT/JP2009/071023 WO2010073957A1 (ja) 2008-12-26 2009-12-17 半導体発光素子の製造方法および半導体発光素子
TW098144772A TW201034244A (en) 2008-12-26 2009-12-24 Method for manufacturing semiconductor light emitting element, and semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008334869A JP2010157604A (ja) 2008-12-26 2008-12-26 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JP2010157604A JP2010157604A (ja) 2010-07-15
JP2010157604A5 true JP2010157604A5 (enExample) 2010-08-26

Family

ID=42287572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008334869A Pending JP2010157604A (ja) 2008-12-26 2008-12-26 半導体発光素子の製造方法

Country Status (5)

Country Link
US (1) US8580592B2 (enExample)
JP (1) JP2010157604A (enExample)
CN (1) CN102265415A (enExample)
TW (1) TW201034244A (enExample)
WO (1) WO2010073957A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227479A (ja) * 2011-04-22 2012-11-15 Sharp Corp 窒化物半導体素子形成用ウエハ、窒化物半導体素子形成用ウエハの製造方法、窒化物半導体素子、および窒化物半導体素子の製造方法
JP5881560B2 (ja) * 2012-08-30 2016-03-09 株式会社東芝 半導体発光装置及びその製造方法
EP2908330B1 (en) 2012-10-12 2021-05-19 Sumitomo Electric Industries, Ltd. Group iii nitride composite substrate, manufacturing method therefor, and group iii nitride semiconductor device manufacturing method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100728A (ja) 1998-09-18 2000-04-07 Hitachi Ltd 結晶成長装置
TW558846B (en) 2001-06-15 2003-10-21 Nichia Corp Nitride semiconductor light emitting element and light emitting device using the same
JP2003063897A (ja) * 2001-08-28 2003-03-05 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法
JP2004168622A (ja) 2002-11-22 2004-06-17 Kyocera Corp 単結晶サファイア基板およびその製造方法
JP2006156454A (ja) * 2004-11-25 2006-06-15 Sony Corp 結晶成長方法及び窒化ガリウム系化合物薄膜の製造方法
DE112006002505T5 (de) 2005-09-29 2008-08-14 Sumitomo Chemical Co., Ltd. Verfahren zur Herstellung eines Halbleiters eines Nitrids der Gruppe 3-5 und Verfahren zur Herstellung einer lichtemittierenden Vorrichtung
JP4806261B2 (ja) * 2006-01-05 2011-11-02 パナソニック株式会社 窒化物系化合物半導体素子用ウェハーの製造方法
JP2008177525A (ja) 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2008294449A (ja) * 2008-06-03 2008-12-04 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ

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