A B c D 558846 申請專利範圍 AUriyGa^i少之氮化物半導體所構成， 前述第二導電型層之上局部形成有窗部與第一電極， 基板之上形成有包含前述活性層及第二導電型層之凸 部，以包圍該凸部之大致整個側面之方式設有前述電流 狹窄層。 10. —種氮化物半導體發光元件，其具有在基板上堆疊有第 一導電型層，其係具有第一導電型之氮化物半導體層； 活性層；及第二導電型層，其係具有與第一導電型不同 之第二導電型之第一氮化物半導體層的構造，其特徵為： 前述第二導電型層在第一氮化物半導體層之上具有第 二氮化物半導體層，並且在該第一氮化物半導體層與第 二氮化物半導體層之間具有電流狹窄層，其係包含開口 部及前述第一導電型、i型或半絕緣性之第三氮化物半導 體層， 前述第三氮化物具有AlxInyGa卜X_y(0<x<l，0<y< 1， x+y<l)，前述第一半導體層或第二氮化物半導體層具有 其III族構成元素數比前述第三氮化物半導體層之 AlxInyGai+y少之氮化物半導體， 前述第二導電型層之上局部形成有窗部與第一電極， 基板之上形成有包含前述活性層及第二導電型層之凸 部，前述電流狹窄層於該凸部之至少一個側面具有在側 面之至少一部分開口的開口部。 1 1.如申請專利範圍第10項之氮化物半導體發光元件，其中 在前述凸部之角部或角落之至少一個上設有電流狹窄層。 本紙張尺度適用中國國家標準(CNS) A4規格（210 X 297公釐） 558846AB c D 558846 is composed of a nitride semiconductor with a small number of patent applications. The window portion and the first electrode are partially formed on the second conductive type layer, and the substrate including the active layer and the second conductive type is formed on the substrate. The convex portion of the layer is provided with the aforementioned current narrowing layer so as to surround substantially the entire side surface of the convex portion. 10. A nitride semiconductor light emitting device having a first conductivity type layer stacked on a substrate, which is a nitride semiconductor layer having a first conductivity type; an active layer; and a second conductivity type layer having The structure of the first nitride semiconductor layer of the second conductivity type different from the first conductivity type is characterized in that the second conductivity type layer has a second nitride semiconductor layer on the first nitride semiconductor layer, and There is a current narrow layer between the first nitride semiconductor layer and the second nitride semiconductor layer, which includes an opening and the third nitride semiconductor layer of the first conductivity type, i-type, or semi-insulating property, and the third nitrogen layer. The compound has AlxInyGa and X_y (0 < x < l, 0 < y < 1, x + y < l), and the first semiconductor layer or the second nitride semiconductor layer has a group III constituent element number higher than that of the third nitride. A nitride semiconductor with a small amount of AlxInyGai + y in the semiconductor layer, a window portion and a first electrode are partially formed on the second conductive type layer, and a convex portion including the active layer and the second conductive type layer is formed on the substrate. Flow constriction layer on at least one side surface of the convex portion having an opening portion opening at least a part of the side. 1 1. The nitride semiconductor light-emitting device according to claim 10, wherein a current narrowing layer is provided on at least one of the corners or corners of the convex portions. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 558846
A B CD -----~--- 六、申請專利範圍 -·:申：專利範圍第9至"項中任一項之氮化物半導體發 與;—電Γ在前述第二導電型層之上局部形成有窗部 13.如申請專利範圍㈣項之氮化物半導體發光幻牛，且中 以投影於pn接合面之影像與投影於電流狹 : 之影像之至少-部分重叠之方式設有窗部。邓 K ^中請專利範圍第13項之氮化物半導體發光元件， 设有數個前述開口部。 ” 15· ^中請專利範圍第14項之氮化物半導體發光元件，其中 精由使第一導電型層之一部分露出，自該露出面向：方 :出：有前述凸部，並且在露出面形成有電極，該電極 k沿著凸邵之側面形成。 16. ^中請專利範圍第15項之氮化物半導體發光元件，其中 i述凸部側面之内，與形成於第一導電型層之露出面之 接合用之電極相對之側面設有電流狹窄層，其他側面之 一邓分設有在該側面之至少一部分開口的開口部。 17-如二請專利範圍第16項之氮化物半導體發光元件，其中 向前述Pn接合面之開口部與第—電極之影像，以第二電 極之影像之i少-部分與至少一個開口部之影像重叠之 方式設有第一電極、開口部。 A如申請專利範圍第17項之氮化物半導體發光元件，並中 以對-個前述開π部之影像，將該開口部之影像劃分成 數個區域之方式，設有橋接前述開口部之影像的第一電 極0 -4- 本紙張尺度適用中國國家標準(CNS) A4規格（210 X 297公楚）AB CD ----- ~ --- 6. Scope of patent application-:: Application: Nitride semiconductor generation in any one of items 9 to "; -electricity Γ is in the aforementioned second conductive type layer A window portion is partially formed on the top. 13. If a nitride semiconductor light-emitting device is used, it is provided in such a way that the image projected on the pn junction surface and the image projected on the current narrow at least partially overlap. Window. In Deng K ^, the nitride semiconductor light-emitting device according to item 13 of the patent application is provided with a plurality of the aforementioned openings. "15. ^ The nitride semiconductor light-emitting device according to item 14 of the patent, wherein a part of the first conductive type layer is exposed, and the exposed surface is: square: out: the aforementioned convex portion is formed on the exposed surface There is an electrode, and the electrode k is formed along the side of the protrusion. 16. The nitride semiconductor light-emitting device according to item 15 of the patent, wherein the side of the convex portion and the first conductive type layer are exposed. A current narrow layer is provided on the opposite side of the electrode for bonding, and one of the other sides is provided with an opening at least a part of the side. 17-Nitride semiconductor light-emitting device as claimed in item 16 of the patent scope The first electrode and the opening are provided to the image of the opening portion and the first electrode of the aforementioned Pn joint surface in such a manner that the i-part of the image of the second electrode overlaps with the image of at least one opening portion. The nitride semiconductor light-emitting element according to the 17th aspect of the patent is provided with an image bridging the aforementioned opening portion in such a manner that the image of the opening portion is divided into a plurality of regions, the image of the opening portion is divided into several regions. The first electrode 0-4- this paper scale applicable Chinese National Standard (CNS) A4 size (210 X 297 male Chu)
8 8 8 8 AB c D 558846 六、申請專利範圍 19. 如申請專利範圍第18項之氮化物半導體發光元件，其中 覆蓋前述第一電極之至少一邵分，在第一電極之上形成 有透光性膜。 20. 如申請專利範圍第19項之氮化物半導體發光元件，其中 前述開口部具有縱長方向，前述第一電極之至少一邵分 沿著該縱長方向設置。 21. —種氮化物半導體發光元件，其具有在基板上堆疊有第 一導電型層，其係具有第一導電型之氮化物半導體層； 活性層；及第二導電型層，其係具有與第一導電型不同 之第二導電型之第一氮化物半導體層的構造，其特徵為： 前述第二導電型層在第一氮化物半導體層之上具有第 .二氮化物半導體層，並且在該第一氮化物半導體層與第 二氮化物半導體層之間具有電流狹窄層，其係包含開口 部及前述第一導電型、i型或半絕緣性之第三氮化物半導 體層， 前述第二導電型層之上局部形成有窗部與第一電極， 前述第三氮化物半導體層具有AlJiiyGa〗 _x.yN(0 < X < 1， 0<y<l，x+y^l)，前述第一半導體層或第二氮化物半 導體層具有其III族構成元素數比前述第三氮化物半導體 層之AlxInyGai+y少之氮化物半導體。 22. 如申請專利範圍第2 1項之氮化物半導體發光元件，其中 前述第三氮化物半導體層之AlJnyGa^.yN係非摻雜。 23. —種氮化物半導體發光元件，其具有在基板上堆疊有第 一導電型層，其係具有第一導電型之氮化物半導體層； -5- 本紙張尺度適用中國國家標準(CNS) Α4規格（210Χ 297公釐） 裝 η 558846 A3 B8 C8 D8 六、申請專利範圍 活性層；及第二導電型層，其係具有與第一導電型不同 之第二導電型之第一氮化物半導體層的構造，其特徵為： 前述第二導電型層在第一氮化物半導體層之上具有第 二氮化物半導體層，並且在該第一氮化物半導體層與第 二氮化物半導體層之間具有電流狹窄層，其係包含開口 部及第三氮化物半導體層， 前述第三氮化物半導體層具有AlxInyGai_x_yN(0< x< 1, 0<y<l，χ+y^l)，前述第一半導體層或第二氮化物半 導體層具有其III族構成元素數比前述第三氮化物半導體 層之AIJnyGai+y少之氮化物半導體， 前述第三氮化物半導體層具有第二導電型之雜質。 24· —種氮化物半導體發光元件，其具有在基板上堆疊有第 一導電型層，其係具有第一導電型之氮化物半導體層； 活性層；及第二導電型層，其係具有與第一導電型不同 之第二導電型之第一氮化物半導體層的構造，其特徵為： 前述第二導電型層在第一氮化物半導體層之上具有第 二氮化物半導體層，並且在該第一氮化物半導體層與第 二氮化物半導體層之間具有電流狹窄層，其係包含開口 部及第三氮化物半導體層， 前述第三氮化物半導體層具有AlxInyGai_x_yN(0 < X < 1， 0<y<l，x+y^l)，前述第一半導體層或第二氮化物半 導體層具有其III族構成元素數比前述第三氮化物半導體 層之AlxInyGaNx_y少之氮化物半導體， 前述第三氮化物半導體層具有第二導電型之雜質，前 -6 - 本紙張尺度適用中國國家標準(CNS) A4規格（210 X 297公釐） 裝 玎 558846 - Β8 C8 D8 六、申請專利範圍 述第二氮化物半導體層之第二導電型之雜質濃度大於前 述第三氮化物半導體。 25。 一種氮化物半導體發光元件，其具有在基板上堆疊有第 一導電型層，其係具有第一導電型之氮化物半導體層； 活性層；及第二導電型層，其係具有與第一導電型不同 之第二導電型之第一氮化物半導體層的構造，其特徵為： 前述第二導電型層在第一氮化物半導體層之上具有第 二氮化物半導體層，並且在該第一氮化物半導體層與第 二氮化物半導體層之間具有電流狹窄層，其係包含開口 部及第三氮化物半導體層， 前述第三氮化物半導體層具有AUInyGai+yi^O < X < 1， .0<y<l，x+ySl)，前述第一半導體層或第二氮化物半 導體層具有其III族構成元素數比前述第三氮化物半導體 層之AIJnyGak-y少之氮化物半導體， 前述第三氮化物半導體層係含銦與鋁之氮化物半導體 ，前述第二氮化物半導體層之第二導電型雜質濃度在 lxl018cm·3以上。 26. —種氮化物半導體發光元件，其具有在基板上堆疊有第 一導電型層，其係具有第一導電型之氮化物半導體層； 活性層；及第二導電型層，其係具有與第一導電型不同 之第二導電型之第一氮化物半導體層的構造，其特徵為： 前述第二導電型層在第一氮化物半導體層之上具有第 二氮化物半導體層，並且在該第一氮化物半導體層與第 二氮化物半導體層之間具有電流狹窄層，其係包含開口 本紙張尺度適用中國國家標準(CNS) A4規格（210 X 297公釐） 558846 as B8 C8 D8 六、申請專利範圍 部及第三氮化物半導體層， 前述第三氮化物半導體層具有AlxInyGa卜x_yN(0< x< 1， 0<y<l，x+y^l)，前述第一半導體層或第二氮化物半 導體層具有其III族構成元素數比前述第三氮化物半導體 層之AlxInyGa^x.y少之氮化物半導體， 前述第三氮化物半導體層係含銦與鋁之氮化物半導體 ，第一氮化物半導體層上具有：鋁混晶比小之氮化物半 導體層，及蝕刻阻止層，其係包含氮化物半導體，該氮 化物半導體含鋁混晶比大之鋁。 27. —種氮化物半導體發光元件，其具有在基板上堆疊有第 一導電型層，其係具有第一導電型之氮化物半導體層； 活性層；及第二導電型層，其係具有與第一導電型不同 之第二導電型之第一氮化物半導體層的構造，其特徵為： 前述第二導電型層在第一氮化物半導體層之上具有第 二氮化物半導體層，並且在該第一氮化物半導體層與第 二氮化物半導體層之間具有電流狹窄層，其係包含開口 部及第三氮化物半導體層， 前述第三氮化物半導體層具有AlxInyGai_x_yN(0< x< 1， 0<y<l，x+y^l)，前述第一半導體層或第二氮化物半 導體層具有其III族構成元素數比前述第三氮化物半導體 層之AlxInyGa^^y少之氮化物半導體， 前述電流狹窄層具有開口部， 前述第二導電型層上具有：接合用之電極；及擴散用 之電極，其係電性連接於該接合用電極，並延伸於第二 本紙張尺度適用中國國家標準(CNS) A4規格（210 X 297公釐） 558846 as B8 C8 D8 六、申請專利範圍 導電型層上；該擴散用電極在開口部上具有窗部， 前述電流狹窄層於前述接合用電極之正下方具有電流 狹窄部。 28. 如申請專利範圍第23至27項中任一項之氮化物半導體發 光元件，其中前述第三氮化物半導體層不含第一導電型 之雜質。 29. 如申請專利範圍第21、23至27項中任一項之氮化物半導 體發光元件，其中前述氮化物半導體發光元件係面發光 型的雷射元件，其係在電極開口部之窗部與基板側，而 非活性層上具有反射層。 30. 如申請專利範圍第21、23至27項中任一項之氮化物半導 •體發光元件，其中前述氮化物半導體發光元件係端面發 光型雷射元件，其係具有對應於帶狀之電流狹窄層開口 部之波導路徑。 31. —種氮化物半導體發光元件，其具有在基板主面上堆疊 有第一導電型層，其係具有第一導電型之氮化物半導體 層；活性層；及第二導電型層，其係具有與第一導電型 不同之第二導電型之第一氮化物半導體層的構造，其特 徵為： 前述第二導電型層之上局部形成有歐姆用之第一電極 與電極開口部之窗部， 前述基板具有第一主面及第二主面，前述第一導電型 層設置於第一主面上，前述基板之第一主面上設有凹凸 部，其凹部具有上方變寬之傾斜側面，並且在前述窗部 本紙張尺度適用中國國家標準(CNS) A4規格（210 X 297公釐）8 8 8 8 AB c D 558846 6. Scope of patent application 19. For the nitride semiconductor light-emitting element of the 18th scope of the application for patent, at least one point of the aforementioned first electrode is covered, and a transparent layer is formed on the first electrode. Light film. 20. The nitride semiconductor light-emitting device according to claim 19, wherein the opening has a lengthwise direction, and at least one point of the first electrode is provided along the lengthwise direction. 21. A nitride semiconductor light emitting device having a first conductivity type layer stacked on a substrate, which is a nitride semiconductor layer having a first conductivity type; an active layer; and a second conductivity type layer having The structure of the first nitride semiconductor layer of the second conductivity type different from the first conductivity type is characterized in that the aforementioned second conductivity type layer has a .dinitride semiconductor layer on the first nitride semiconductor layer, and There is a current narrow layer between the first nitride semiconductor layer and the second nitride semiconductor layer. The current narrow layer includes an opening and the third nitride semiconductor layer of the first conductivity type, i-type, or semi-insulating property. A window portion and a first electrode are partially formed on the conductive type layer, and the third nitride semiconductor layer has AlJiiyGa〗 _x.yN (0 < X < 1, 0 < y < 1, x + y ^ l), The first semiconductor layer or the second nitride semiconductor layer includes a nitride semiconductor having a smaller number of group III constituent elements than the AlxInyGai + y of the third nitride semiconductor layer. 22. The nitride semiconductor light-emitting device according to item 21 of the application, wherein the AlJnyGa ^ .yN of the third nitride semiconductor layer is undoped. 23. —A nitride semiconductor light-emitting element having a first conductivity type layer stacked on a substrate, which is a nitride semiconductor layer having the first conductivity type; -5- This paper size applies to China National Standard (CNS) Α4 Specifications (210 × 297 mm) η 558846 A3 B8 C8 D8 VI. Patent application active layer; and a second conductivity type layer, which is a first nitride semiconductor layer with a second conductivity type different from the first conductivity type The structure is characterized in that the second conductivity type layer has a second nitride semiconductor layer above the first nitride semiconductor layer, and has a current between the first nitride semiconductor layer and the second nitride semiconductor layer. The narrow layer includes an opening and a third nitride semiconductor layer. The third nitride semiconductor layer has AlxInyGai_x_yN (0 < x < 1, 0 < y < l, χ + y ^ l), and the first semiconductor layer. Or the second nitride semiconductor layer has a nitride semiconductor having fewer group III constituent elements than AIJnyGai + y of the third nitride semiconductor layer, and the third nitride semiconductor layer has a second conductivity type impurity. . 24 · A nitride semiconductor light emitting device having a first conductivity type layer stacked on a substrate, the nitride semiconductor light emitting element having a first conductivity type; an active layer; and a second conductivity type layer having The structure of the first nitride semiconductor layer of the second conductivity type different from the first conductivity type is characterized in that the second conductivity type layer has a second nitride semiconductor layer on the first nitride semiconductor layer, and There is a current narrow layer between the first nitride semiconductor layer and the second nitride semiconductor layer, which includes an opening portion and a third nitride semiconductor layer. The third nitride semiconductor layer has AlxInyGai_x_yN (0 < X < 1 , 0 < y < l, x + y ^ l), the first semiconductor layer or the second nitride semiconductor layer has a nitride semiconductor having fewer group III constituent elements than the AlxInyGaNx_y of the third nitride semiconductor layer, The third nitride semiconductor layer has impurities of the second conductivity type, the former -6-this paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) decoration 558846-Β8 C8 D8 The scope of the patent claims is that the impurity concentration of the second conductivity type of the second nitride semiconductor layer is greater than that of the third nitride semiconductor. 25. A nitride semiconductor light-emitting element has a first conductivity type layer stacked on a substrate, which is a nitride semiconductor layer having the first conductivity type; an active layer; and a second conductivity type layer having the same conductivity as the first conductivity type. The structure of the first nitride semiconductor layer of the second conductivity type having a different type is characterized in that: the second conductivity type layer has a second nitride semiconductor layer on the first nitride semiconductor layer, and the first nitrogen There is a current narrow layer between the compound semiconductor layer and the second nitride semiconductor layer, which includes an opening portion and a third nitride semiconductor layer. The third nitride semiconductor layer has AUInyGai + yi ^ O < X < 1, .0 < y < l, x + ySl), the first semiconductor layer or the second nitride semiconductor layer has a nitride semiconductor having fewer group III constituent elements than the AIJnyGak-y of the third nitride semiconductor layer, The third nitride semiconductor layer is a nitride semiconductor containing indium and aluminum, and the second conductivity type impurity concentration of the aforementioned second nitride semiconductor layer is 1 × 1018 cm · 3 or more. 26. A nitride semiconductor light-emitting device having a first conductivity type layer stacked on a substrate, which is a nitride semiconductor layer having a first conductivity type; an active layer; and a second conductivity type layer having The structure of the first nitride semiconductor layer of the second conductivity type different from the first conductivity type is characterized in that the second conductivity type layer has a second nitride semiconductor layer on the first nitride semiconductor layer, and There is a current narrow layer between the first nitride semiconductor layer and the second nitride semiconductor layer, which includes an opening. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 558846 as B8 C8 D8. The scope of the patent application and the third nitride semiconductor layer, the third nitride semiconductor layer has AlxInyGa and x_yN (0 < x < 1, 0 < y < l, x + y ^ l), the aforementioned first semiconductor layer or The dinitride semiconductor layer has a nitride semiconductor having fewer group III constituent elements than the AlxInyGa ^ xy of the third nitride semiconductor layer. The third nitride semiconductor layer is a nitride semiconductor containing indium and aluminum. The first nitride semiconductor layer includes a nitride semiconductor layer with a small aluminum mixed crystal ratio, and an etching stopper layer, which includes a nitride semiconductor containing aluminum with a large aluminum mixed crystal ratio. 27. A nitride semiconductor light emitting element having a first conductivity type layer stacked on a substrate, which is a nitride semiconductor layer having a first conductivity type; an active layer; and a second conductivity type layer having The structure of the first nitride semiconductor layer of the second conductivity type different from the first conductivity type is characterized in that the second conductivity type layer has a second nitride semiconductor layer on the first nitride semiconductor layer, and There is a current narrow layer between the first nitride semiconductor layer and the second nitride semiconductor layer, which includes an opening and a third nitride semiconductor layer. The third nitride semiconductor layer has AlxInyGai_x_yN (0 < x < 1, 0 & lt y < l, x + y ^ l), the first semiconductor layer or the second nitride semiconductor layer has a nitride semiconductor having fewer group III constituent elements than the AlxInyGa ^^ y of the third nitride semiconductor layer, The current narrowing layer has an opening, and the second conductive type layer includes: an electrode for bonding; and an electrode for diffusion, which are electrically connected to the electrode for bonding and extend on the second paper. The dimensions are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 558846 as B8 C8 D8 6. The patent application scope is on the conductive type layer; the diffusion electrode has a window portion on the opening portion, and the aforementioned current narrowing layer is on the aforementioned A current narrow portion is provided directly below the bonding electrode. 28. The nitride semiconductor light-emitting device according to any one of claims 23 to 27, wherein the aforementioned third nitride semiconductor layer does not contain impurities of the first conductivity type. 29. The nitride semiconductor light-emitting device according to any one of claims 21, 23 to 27, wherein the aforementioned nitride semiconductor light-emitting device is a surface-emitting laser device, which is located at a window portion of an electrode opening and There is a reflective layer on the substrate side and not on the active layer. 30. The nitride semiconductor light-emitting element according to any one of claims 21, 23 to 27, wherein the aforementioned nitride semiconductor light-emitting element is an end-emission type laser element having a band-shaped The waveguide path of the opening of the current narrow layer. 31. A nitride semiconductor light-emitting element having a first conductivity type layer stacked on a main surface of a substrate, which is a nitride semiconductor layer having a first conductivity type; an active layer; and a second conductivity type layer, which is The structure of the first nitride semiconductor layer having a second conductivity type different from the first conductivity type is characterized in that: the first electrode for ohms and the window portion of the electrode opening portion are partially formed on the second conductivity type layer. The substrate has a first main surface and a second main surface. The first conductive type layer is disposed on the first main surface. The first main surface of the substrate is provided with a concave and convex portion, and the concave portion has an inclined side surface widening upward. , And the paper size of the aforementioned window applies to the Chinese National Standard (CNS) A4 (210 X 297 mm)
A B c D 558846 六、申請專利範圍 區域内設有該凹部與凸部之邊界，形成有數個凸部區域 〇 32. —種氮化物半導體發光元件，其具有在基板主面上堆疊 有第一導電型層，其係具有第一導電型之氮化物半導體 層；活性層；及第二導電型層，其係具有與第一導電型 不同之第二導電型之第一氮化物半導體層的構造，其特 徵為： 前述第二導電型層之上局部形成有歐姆用之第一電極 與電極開口部之窗部， 前述基板具有第一主面及第二主面，前述第一導電型 層設置於第一主面上，前述基板之第一主面上設有凹凸 .部，其凹部具有上方變寬之傾斜側面，並且在前述窗部 區域内，該凹部與凸部之邊界線或凸部之構成邊的方向 傾斜於前述窗部之縱長方向而形成。 33· —種氮化物半導體發光元件，其具有在基板主面上堆疊 有第一導電型層，其係具有第一導電型之氮化物半導體 層；活性層；及第二導電型層，其係具有與第一導電型 不同之第二導電型之第一氮化物半導體層的構造，其特 徵為： 前述第二導電型層之上局部形成有歐姆用之第一電極 與電極開口部之窗部， 前述基板具有第一主面及第二主面，前述第一導電型 層設置於第一主面上，前述基板之第一主面上設有凹凸 部，其凹部具有上方變寬之傾斜側面，並且在前述窗部 -1 〇 - 本紙張尺度適用中國國家標準(CNS) A4規格（210X297公釐） 558846 申請專利範圍AB c D 558846 VI. The boundary between the concave portion and the convex portion is provided in the area of the patent application, and a plurality of convex regions are formed. 32. A nitride semiconductor light-emitting element having a first conductive layer stacked on the main surface of the substrate An active layer; and a second conductivity type layer having a structure of a first nitride semiconductor layer of a second conductivity type different from the first conductivity type, It is characterized in that: a first electrode for ohms and a window portion for electrode openings are partially formed on the second conductive type layer, the substrate has a first main surface and a second main surface, and the first conductive type layer is disposed on On the first main surface, a concave-convex portion is provided on the first main surface of the substrate, and the concave portion thereof has an inclined side surface widened upward, and in the region of the window portion, a boundary line between the concave portion and the convex portion or the convex portion. The direction of the constituent side is formed obliquely to the longitudinal direction of the window portion. 33 · —A nitride semiconductor light-emitting element having a first conductivity type layer stacked on a main surface of a substrate, the nitride semiconductor layer having a first conductivity type; an active layer; and a second conductivity type layer, The structure of the first nitride semiconductor layer having a second conductivity type different from the first conductivity type is characterized in that: the first electrode for ohms and the window portion of the electrode opening portion are partially formed on the second conductivity type layer. The substrate has a first main surface and a second main surface. The first conductive type layer is disposed on the first main surface. The first main surface of the substrate is provided with a concave and convex portion, and the concave portion has an inclined side surface widening upward. And in the aforementioned window part 〇 〇- This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 558846 Patent application scope
區域内，該凹部與凸部之邊界線或凸部之構成邊的方向 傾斜於前述窗部之排列方向而形成。 34·如申凊專利範圍第31至33項中任一項之氮化物半導體發 光兀件，其中前述凹部與凸部之邊界線或凸部之構成邊 的方向，具有相互不同的兩個以上方向。 35·如中請專利範圍第31至33項中任—項之氮化物半導體發 光7L件，其中前述凹部與凸部之邊界線或凸部之構成邊 的方向，亦具有平行於窗部之排列方向或窗部之縱長方 向的方向。 36. 如申請專利範圍第31至33項中任一項之氣化物半導體發 先兀件，其中前述窗部在傾斜於窗部之縱長方向的排列 方向上排列有數個。 37. 如中請專利範圍㈣至33項中任―項之氮化物半導體發 先兀件’其中在前述第一氮化物半導體層與第二氮化物 半導體層之間具有電流狹窄層’其係包含開口部及第三 氮化物半導體層，前述窗部正下方形成有電流狹窄層之 38. 39. 如申請專利範圍第31至33項中任-項之氮化物半導體發 光兀件，其中前述第一導電型層之一部分露出。 種發光裝置’其特徵為具有：前述申請專利範圍第 ，1〇, 21，23〜27項中任-項之氮化物半導體發光元件； 及轉換自發光元件之發光光譜之至少—部分的勞光物質 ，且轉換王發光波長在360 nm以上之 光譜之-部分的勞光物質，為使用附加销之驗土\;= 558846In the area, the boundary line between the concave portion and the convex portion or the direction of the constituent edge of the convex portion is formed obliquely to the arrangement direction of the window portion. 34. The nitride semiconductor light-emitting element according to any one of claims 31 to 33 in the patent application range, wherein the boundary line between the concave portion and the convex portion or the direction of the edge of the convex portion has two or more directions different from each other. . 35. For example, the nitride semiconductor light-emitting 7L piece of any of the items 31 to 33 in the patent scope, wherein the boundary line between the aforementioned concave portion and convex portion or the direction of the edge of the convex portion also has an arrangement parallel to the window portion. Direction or direction of the lengthwise direction of the window. 36. The vaporized semiconductor starter according to any one of claims 31 to 33, wherein the aforementioned window portion is arranged in a plurality of rows in an arrangement direction inclined to the longitudinal direction of the window portion. 37. For example, please refer to any one of the scope of patents No. 33 to No. 33-"Nitride semiconductor development element" in which there is a current narrow layer between the aforementioned first nitride semiconductor layer and the second nitride semiconductor layer. The opening and the third nitride semiconductor layer, a current narrow layer 38. 39 is formed directly under the aforementioned window portion. 39. The nitride semiconductor light-emitting element according to any one of items 31 to 33 of the scope of patent application, wherein the first A part of the conductive type layer is exposed. A light-emitting device 'is characterized in that it has: a nitride semiconductor light-emitting element in any one of the above-mentioned patent applications, Nos. 10, 21, 23 to 27; and at least a part of the labor light converted from the light-emitting spectrum of the light-emitting element. Substances that are converted to a part of the spectrum with a luminous wavelength of 360 nm or more, are used for testing with additional pins \; = 558846
六、申請專利範圍 粦灰石唛光體，該銪具有：含自鎂、鈣、鋇、鐵 # ϋ ψ > _ ^ 、 種以Μ所代表之元素，及至少含自龜、鐵， 4〇鉻、錫選出之-種以Μ’代表之元素。 •如申請專利範圍第35項之發光裝置，其中前述鹼土類^ 屬ί化％灰石螢光體係以（Ml-x-yEUxM，y)1()(P〇4)6Q2表3 、虫光(其中具有·· M為至少自鎂、鈣、鋇、鳃、鋅這 、的種’ M’為至少自鐘、鐵、絡、錫選出之一種，（ 為自鹵素之氟、氯、溴、碘選出之一種，且0.0001 g 0·5，0.0001 SK0.5)。 h如申凊專利範圍第39或40項之發光裝置，其中前述螢光 物貝係吸收來自發光元件之發光光譜之至少一部分，發 ,出具有兩個以上發光峰值之發光光譜，螢光物質之發光 光。晋之至少一部分彼此補色的螢光。 42·如申請專利範圍第丨，9, 1〇, 21，2;3〜η項中任一項之氮化 物半：體發光元件，其中設有凸部，其係包含前述活性 層及第二導電型層，並且設有數個凸部區域，其係具有 縱長方向。 -12- 本紙張尺度適用中國國家標準(CNS) A4規格（210 X 297公釐)6. The scope of patent application: ash limestone, which has: from magnesium, calcium, barium, and iron # & ψ > _ ^, an element represented by M, and at least from turtle, iron, 40 chromium , Tin selected-an element represented by M '. • The light-emitting device according to item 35 of the patent application, wherein the aforementioned alkaline earth ^ is a fluorinated gray limestone fluorescent system with (Ml-x-yEUxM, y) 1 () (P〇4) 6Q2 Table 3, The type "M" is at least one selected from bell, iron, iron, tin, and M (selected from fluorine, chlorine, bromine, and iodine of halogen) One of them, and 0.0001 g 0.5, 0.0001 SK0.5). H The light-emitting device according to item 39 or 40 of the patent application range, wherein the aforementioned fluorescein shell absorbs at least a part of the light-emitting spectrum from the light-emitting element, and emits light. It has a luminescence spectrum with two or more luminous peaks, and luminescence of a fluorescent substance. At least a part of the luminescence complements the luminescence of each other. 42. Such as the scope of patent application No. 丨, 9, 10, 21, 2; 3 ~ η The nitride half according to any one of the above items: a body light-emitting device, wherein a convex portion is provided, which includes the foregoing active layer and the second conductive type layer, and a plurality of convex portion regions are provided, which have a longitudinal direction. -12 -This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)