JP2010157604A - 半導体発光素子の製造方法 - Google Patents

半導体発光素子の製造方法 Download PDF

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Publication number
JP2010157604A
JP2010157604A JP2008334869A JP2008334869A JP2010157604A JP 2010157604 A JP2010157604 A JP 2010157604A JP 2008334869 A JP2008334869 A JP 2008334869A JP 2008334869 A JP2008334869 A JP 2008334869A JP 2010157604 A JP2010157604 A JP 2010157604A
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JP
Japan
Prior art keywords
layer
substrate
compound semiconductor
light emitting
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008334869A
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English (en)
Japanese (ja)
Other versions
JP2010157604A5 (enExample
Inventor
Tetsuro Sakurai
哲朗 桜井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP2008334869A priority Critical patent/JP2010157604A/ja
Priority to US13/142,143 priority patent/US8580592B2/en
Priority to CN2009801523121A priority patent/CN102265415A/zh
Priority to PCT/JP2009/071023 priority patent/WO2010073957A1/ja
Priority to TW098144772A priority patent/TW201034244A/zh
Publication of JP2010157604A publication Critical patent/JP2010157604A/ja
Publication of JP2010157604A5 publication Critical patent/JP2010157604A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

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  • Led Devices (AREA)
JP2008334869A 2008-12-26 2008-12-26 半導体発光素子の製造方法 Pending JP2010157604A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008334869A JP2010157604A (ja) 2008-12-26 2008-12-26 半導体発光素子の製造方法
US13/142,143 US8580592B2 (en) 2008-12-26 2009-12-17 Method for manufacturing semiconductor light emitting element, and semiconductor light emitting element
CN2009801523121A CN102265415A (zh) 2008-12-26 2009-12-17 半导体发光元件的制造方法以及半导体发光元件
PCT/JP2009/071023 WO2010073957A1 (ja) 2008-12-26 2009-12-17 半導体発光素子の製造方法および半導体発光素子
TW098144772A TW201034244A (en) 2008-12-26 2009-12-24 Method for manufacturing semiconductor light emitting element, and semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008334869A JP2010157604A (ja) 2008-12-26 2008-12-26 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JP2010157604A true JP2010157604A (ja) 2010-07-15
JP2010157604A5 JP2010157604A5 (enExample) 2010-08-26

Family

ID=42287572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008334869A Pending JP2010157604A (ja) 2008-12-26 2008-12-26 半導体発光素子の製造方法

Country Status (5)

Country Link
US (1) US8580592B2 (enExample)
JP (1) JP2010157604A (enExample)
CN (1) CN102265415A (enExample)
TW (1) TW201034244A (enExample)
WO (1) WO2010073957A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227479A (ja) * 2011-04-22 2012-11-15 Sharp Corp 窒化物半導体素子形成用ウエハ、窒化物半導体素子形成用ウエハの製造方法、窒化物半導体素子、および窒化物半導体素子の製造方法
JP5881560B2 (ja) * 2012-08-30 2016-03-09 株式会社東芝 半導体発光装置及びその製造方法
EP2908330B1 (en) 2012-10-12 2021-05-19 Sumitomo Electric Industries, Ltd. Group iii nitride composite substrate, manufacturing method therefor, and group iii nitride semiconductor device manufacturing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006156454A (ja) * 2004-11-25 2006-06-15 Sony Corp 結晶成長方法及び窒化ガリウム系化合物薄膜の製造方法
JP2007184352A (ja) * 2006-01-05 2007-07-19 Matsushita Electric Ind Co Ltd 窒化物系化合物半導体素子用ウェハーの製造方法及び窒化物系化合物半導体素子用ウェハー
JP2008294449A (ja) * 2008-06-03 2008-12-04 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100728A (ja) 1998-09-18 2000-04-07 Hitachi Ltd 結晶成長装置
TW558846B (en) 2001-06-15 2003-10-21 Nichia Corp Nitride semiconductor light emitting element and light emitting device using the same
JP2003063897A (ja) * 2001-08-28 2003-03-05 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法
JP2004168622A (ja) 2002-11-22 2004-06-17 Kyocera Corp 単結晶サファイア基板およびその製造方法
DE112006002505T5 (de) 2005-09-29 2008-08-14 Sumitomo Chemical Co., Ltd. Verfahren zur Herstellung eines Halbleiters eines Nitrids der Gruppe 3-5 und Verfahren zur Herstellung einer lichtemittierenden Vorrichtung
JP2008177525A (ja) 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006156454A (ja) * 2004-11-25 2006-06-15 Sony Corp 結晶成長方法及び窒化ガリウム系化合物薄膜の製造方法
JP2007184352A (ja) * 2006-01-05 2007-07-19 Matsushita Electric Ind Co Ltd 窒化物系化合物半導体素子用ウェハーの製造方法及び窒化物系化合物半導体素子用ウェハー
JP2008294449A (ja) * 2008-06-03 2008-12-04 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ

Also Published As

Publication number Publication date
WO2010073957A1 (ja) 2010-07-01
CN102265415A (zh) 2011-11-30
US20110260177A1 (en) 2011-10-27
US8580592B2 (en) 2013-11-12
TW201034244A (en) 2010-09-16

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