JP2012109583A5 - - Google Patents
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- JP2012109583A5 JP2012109583A5 JP2011278534A JP2011278534A JP2012109583A5 JP 2012109583 A5 JP2012109583 A5 JP 2012109583A5 JP 2011278534 A JP2011278534 A JP 2011278534A JP 2011278534 A JP2011278534 A JP 2011278534A JP 2012109583 A5 JP2012109583 A5 JP 2012109583A5
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- JP
- Japan
- Prior art keywords
- nitride layer
- electronic device
- optoelectronic
- manufacturing
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000004767 nitrides Chemical class 0.000 claims 60
- 230000005693 optoelectronics Effects 0.000 claims 27
- 238000004519 manufacturing process Methods 0.000 claims 19
- 229910052782 aluminium Inorganic materials 0.000 claims 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 15
- 239000000203 mixture Substances 0.000 claims 13
- 238000000151 deposition Methods 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 11
- 229910002601 GaN Inorganic materials 0.000 claims 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- 229910052710 silicon Inorganic materials 0.000 claims 9
- 239000010703 silicon Substances 0.000 claims 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 8
- 229910052733 gallium Inorganic materials 0.000 claims 8
- 230000008021 deposition Effects 0.000 claims 5
- 230000005669 field effect Effects 0.000 claims 5
- 229910002704 AlGaN Inorganic materials 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22283700P | 2000-08-04 | 2000-08-04 | |
| US60/222,837 | 2000-08-04 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002518510A Division JP5095064B2 (ja) | 2000-08-04 | 2001-08-03 | シリコン基板上に堆積された窒化物層を有する半導体フィルムおよびその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013121497A Division JP2013216573A (ja) | 2000-08-04 | 2013-06-10 | 基板上に堆積された窒化ガリウムフィルムにおける応力の制御方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012109583A JP2012109583A (ja) | 2012-06-07 |
| JP2012109583A5 true JP2012109583A5 (enExample) | 2012-07-19 |
| JP5331868B2 JP5331868B2 (ja) | 2013-10-30 |
Family
ID=22833905
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002518510A Expired - Lifetime JP5095064B2 (ja) | 2000-08-04 | 2001-08-03 | シリコン基板上に堆積された窒化物層を有する半導体フィルムおよびその製造方法 |
| JP2011278534A Expired - Fee Related JP5331868B2 (ja) | 2000-08-04 | 2011-12-20 | 窒化物層上の光電子又は電子デバイス及びその製造方法 |
| JP2013121497A Withdrawn JP2013216573A (ja) | 2000-08-04 | 2013-06-10 | 基板上に堆積された窒化ガリウムフィルムにおける応力の制御方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002518510A Expired - Lifetime JP5095064B2 (ja) | 2000-08-04 | 2001-08-03 | シリコン基板上に堆積された窒化物層を有する半導体フィルムおよびその製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013121497A Withdrawn JP2013216573A (ja) | 2000-08-04 | 2013-06-10 | 基板上に堆積された窒化ガリウムフィルムにおける応力の制御方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (6) | US7687888B2 (enExample) |
| EP (2) | EP2276059A1 (enExample) |
| JP (3) | JP5095064B2 (enExample) |
| AU (1) | AU2001279163A1 (enExample) |
| WO (1) | WO2002013245A1 (enExample) |
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2001
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- 2001-08-03 JP JP2002518510A patent/JP5095064B2/ja not_active Expired - Lifetime
- 2001-08-03 AU AU2001279163A patent/AU2001279163A1/en not_active Abandoned
- 2001-08-03 US US09/922,122 patent/US7687888B2/en not_active Expired - Lifetime
- 2001-08-03 EP EP01957415A patent/EP1307903A1/en not_active Ceased
- 2001-08-03 WO PCT/US2001/024347 patent/WO2002013245A1/en not_active Ceased
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2007
- 2007-09-14 US US11/855,785 patent/US7655090B2/en not_active Expired - Lifetime
-
2009
- 2009-05-22 US US12/471,134 patent/US7816764B2/en not_active Expired - Fee Related
-
2010
- 2010-10-11 US US12/901,988 patent/US8525230B2/en not_active Expired - Fee Related
-
2011
- 2011-11-29 US US13/306,763 patent/US9129977B2/en not_active Expired - Fee Related
- 2011-12-20 JP JP2011278534A patent/JP5331868B2/ja not_active Expired - Fee Related
-
2013
- 2013-06-10 JP JP2013121497A patent/JP2013216573A/ja not_active Withdrawn
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2014
- 2014-08-22 US US14/466,420 patent/US9691712B2/en not_active Expired - Fee Related
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