JP2012109583A - 基板上に堆積された窒化ガリウムフィルムにおける応力の制御方法 - Google Patents
基板上に堆積された窒化ガリウムフィルムにおける応力の制御方法 Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 100
- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000000203 mixture Substances 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 238000000151 deposition Methods 0.000 claims abstract description 23
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
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- 239000002184 metal Substances 0.000 claims description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 description 63
- 239000010408 film Substances 0.000 description 49
- 230000035882 stress Effects 0.000 description 35
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
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- 239000013078 crystal Substances 0.000 description 4
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
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- 238000001069 Raman spectroscopy Methods 0.000 description 1
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- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
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- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
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- 238000007620 mathematical function Methods 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000000628 photoluminescence spectroscopy Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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Abstract
【解決手段】典型的な方法は、基板を供給すること、および供給の中断をまったく伴なわず、成長チャンバへの少なくとも1つの先駆物質の供給によって形成された、当初組成物から最終組成物までの実質的に連続したグレードの様々な組成物を有する基板上にグレーデッド窒化ガリウム層を堆積させることを含む。典型的な半導体フィルムは、基板と、供給の中断をまったく伴なわず、成長チャンバへの少なくとも1つの先駆物質の供給によって形成された、当初組成物から最終組成物までの実質的に連続したグレードの様々な組成物を有する基板上に堆積されたグレーデッド窒化ガリウム層とを含む。
【選択図】なし
Description
本出願は、35U.S.C.§119(e)に基づいて、2000年8月4日にHugues MarchandおよびBrendan J.Moranによって出願され、発明の名称が「シリコンおよび炭化ケイ素基板上に堆積されたGaNフィルムにおける応力の制御方法(METHOD OF CONTROLLING STRESS IN GAN FILMS DEPOSITED ON SILICON AND SILICON CARBIDE SUBSTRATES)」という、米国仮特許出願番号第60/222,837号への優先権を主張する。本出願は、参照して本明細書に組込まれる。
本発明は、海軍調査局(Office of Naval Research)によって授与された助成金番号第N00014−98−1−0401号として政府の補助を受けて実施された。政府は、本発明にあるいくつかの権利を有する。
本発明は、窒化物フィルムに関する。詳しくは半導体デバイス用の窒化ガリウムフィルムにおける亀裂形成の減少方法に関する。
(註:本出願は、カッコ内に入れられた参照番号、例えば[x]によって、本明細書全体に示されているいくつかの様々な出版物を参照する。これらの参照番号に従って並べられたこれらの様々な出版物のリストは、下記において好ましい実施形態の詳細な説明の末尾に見ることができる。これらの出版物の各々は、参照して本明細書に組込まれる。)
シリコン基板上へのGaNフィルムの堆積は、これら2つの材料間の大きい熱膨張率の不整合のために困難である。大部分の堆積技術は、基板およびGaNとは異なる組成物を有する緩衝層または応力緩和層の堆積を含む。すなわち、緩衝層とGaN層との間に急激な組成物の変化がある。これらの技術は、結果として、室温において引張り応力下にあるGaNフィルムを生じさせることとなる。引張り応力は、GaNにおける肉眼で見える亀裂の形成を促進する。これらの亀裂は、その上に製造されたデバイスにとって有害である。
シリコンおよび炭化ケイ素基板上に堆積されたGaNフィルムにおける応力の制御方法、およびこれによって生成されたフィルムが開示されている。典型的な方法は、基板を供給すること、および供給の中断をまったく伴なわず、成長チャンバへの少なくとも1つの先駆物質の供給によって形成された、当初組成物から最終組成物までの実質的に連続したグレードの様々な組成物を有する基板上にグレーデッド窒化ガリウム層を堆積させることを含む。典型的な半導体フィルムは、基板と、供給の中断をまったく伴なわず、成長チャンバへの少なくとも1つの先駆物質の供給によって形成された、当初組成物から最終組成物までの実質的に連続したグレードの様々な組成物を有する基板上に堆積されたグレーデッド窒化ガリウム層とを含む。
図1は、本発明の一般的原理に従って製造された層の構造を示す概略断面図として、本発明の半導体フィルム100を表している。フィルム100の典型的生成方法は、緩衝層とGaN層とを単一堆積工程中に組み合わせ、基板104上に単一グレーデッド窒化ガリウム層102を生成することを含む。この堆積の間、成長チャンバ112への先駆物質110の供給はまったく中断することなく、この組成物は当初組成物106と最終組成物108との間で連続的に変えられる。当初組成物106は、基板を湿潤する緩衝層に適した材料Aの組成物、例えば中〜高アルミニウム部分(例えば20%またはそれ以上)を有するAlNまたはAlGaN化合物である。最終組成物108は、材料Bの組成物、例えば低アルミニウム部分(例えば20%未満)を有するGaNまたはAlGaNである。この組成物グレード114が生じる厚さ116は、堆積される総厚さ118の有意部分、例えば1マイクロメートルの厚さのフィルムの20〜80%である。
これで、本発明の好ましい実施形態を含む説明を終わる。本発明の好ましい実施形態の前記説明は、例証および説明を目的として提示された。これは網羅的なものではなく、開示されたとおりの形態に本発明を限定しようとするものでもない。前記教示に照らして、多くの修正および変形が可能である。
下記の参考文献は、すべて参照して本明細書に組込まれる。
5.M.Yuri、T.Ueda、T.Baba、米国特許第5,928,421号:「窒化ガリウム結晶の形成方法(Method of forming gallium nitride crystal)」。
Claims (34)
- 基板と、
供給の中断をまったく伴なわず、成長チャンバへの少なくとも1つの先駆物質の供給によって形成された、当初組成物から最終組成物までの実質的に連続したグレードの様々な組成物を有する前記基板上に堆積されたグレーデッド窒化ガリウム層と、
を含む半導体フィルム。 - 前記グレーデッド窒化ガリウム層が、有機金属化学気相成長法(MOCVD)を用いて堆積される、請求項1の半導体フィルム。
- 前記グレーデッド窒化ガリウム層が、正味の(net)圧縮応力を有する、請求項1の半導体フィルム。
- 前記グレーデッド窒化ガリウム層が、前記グレーデッド窒化ガリウム層のための成長チャンバへの少なくとも1つの先駆物質の供給の蒸気圧を変えることによって堆積される、請求項1の半導体フィルム。
- 前記先駆物質がガリウム、アルミニウム、または窒素である、請求項1の半導体フィルム。
- 前記グレーデッド窒化ガリウム層が、前記グレーデッド窒化ガリウム層のための成長チャンバのパラメータを変えることによって堆積される、請求項1の半導体フィルム。
- 前記成長チャンバのパラメータが、全圧、基板の温度、総流量、基板の回転速度、または反応器壁の温度である、請求項6の半導体フィルム。
- 前記グレーデッド窒化ガリウム層が、前記グレーデッド窒化ガリウム層のための成長チャンバの形状寸法(geometry)の変更によって堆積される、請求項1の半導体フィルム。
- 成長チャンバの形状寸法の変更は、前記基板を前記成長チャンバのインジェクタに対して動かすことを含む、請求項8の半導体フィルム。
- 前記基板が、シリコンまたは炭化ケイ素である、請求項1の半導体フィルム。
- 前記当初組成物が高アルミニウム組成物である、請求項1の半導体フィルム。
- 前記当初組成物が、窒化アルミニウムまたは高アルミニウム含量アルミニウム窒化ガリウムである、請求項1の半導体フィルム。
- 前記最終組成物が、低アルミニウム組成物である、請求項1の半導体フィルム。
- 前記最終組成物が、窒化ガリウムまたは低アルミニウム含量アルミニウム窒化ガリウムである、請求項1の半導体フィルム。
- さらに、前記グレーデッド窒化ガリウム層上に堆積された少なくとも1つの追加層を含む、請求項1の半導体フィルム。
- 少なくとも1つの別の元素が、前記グレーデッド窒化ガリウム層のための成長チャンバに導入されるが、前記グレーデッド窒化ガリウム層の様々な組成物中に急激な変動を引き起こさない、請求項1の半導体フィルム。
- 前記別の元素が、シリコン、インジウム、またはヒ素である、請求項16の半導体フィルム。
- 基板を供給すること;および
供給の中断をまったく伴なわず、成長チャンバへの少なくとも1つの先駆物質の供給によって形成された、当初組成物から最終組成物までの実質的に連続したグレードの様々な組成物を有する前記基板上にグレーデッド窒化ガリウム層を堆積させること、
を含む半導体フィルムの生成方法。 - 前記グレーデッド窒化ガリウム層の堆積工程が、有機金属化学気相成長法(MOCVD)を用いることを含む、請求項18の方法。
- 前記グレーデッド窒化ガリウム層の堆積工程が、正味の圧縮応力を有するグレーデッド窒化ガリウム層を生成する、請求項18の方法。
- 前記グレーデッド窒化ガリウム層の堆積工程が、前記グレーデッド窒化ガリウム層のための成長チャンバへの少なくとも1つの先駆物質の供給の蒸気圧を変えることを含む、請求項18の方法。
- 前記先駆物質が、ガリウム、アルミニウム、または窒素である、請求項18の方法。
- 前記グレーデッド窒化ガリウム層の堆積工程が、前記グレーデッド窒化ガリウム層のための成長チャンバのパラメータを変えることを含む、請求項18の方法。
- 前記成長チャンバのパラメータが、全圧、基板の温度、総流量、基板の回転速度、または反応器壁の温度である、請求項23の方法。
- 前記グレーデッド窒化ガリウム層の堆積工程が、前記グレーデッド窒化ガリウム層のための成長チャンバの形状寸法の変更を含む、請求項18の方法。
- 前記成長チャンバの形状寸法の変更が、前記基板を前記成長チャンバのインジェクタに対して動かすことを含む、請求項25の方法。
- 前記基板がシリコンまたは炭化ケイ素である、請求項18の方法。
- 前記当初組成物が、高アルミニウム組成物である、請求項18の方法。
- 前記当初組成物が、窒化アルミニウムまたは高アルミニウム含量アルミニウム窒化ガリウムである、請求項18の方法。
- 前記最終組成物が、低アルミニウム組成物である、請求項18の方法。
- 前記最終組成物が、窒化ガリウムまたは低アルミニウム含量アルミニウム窒化ガリウムである、請求項18の方法。
- さらに、前記グレーデッド窒化ガリウム層上に少なくとも1つの追加層を堆積させることを含む、請求項18の方法。
- 前記グレーデッド窒化ガリウム層の形成工程が、前記グレーデッド窒化ガリウム層のための成長チャンバに少なくとも1つの別の元素を導入することを含むが、前記グレーデッド窒化ガリウム層の様々な組成物中に急激な変動を引き起こさない、請求項18の方法。
- 前記別の元素が、シリコン、インジウム、またはヒ素である、請求項33の方法。
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EP2276059A1 (en) | 2011-01-19 |
EP1307903A1 (en) | 2003-05-07 |
US20020020341A1 (en) | 2002-02-21 |
US20110108886A1 (en) | 2011-05-12 |
JP5331868B2 (ja) | 2013-10-30 |
US9129977B2 (en) | 2015-09-08 |
US9691712B2 (en) | 2017-06-27 |
JP2013216573A (ja) | 2013-10-24 |
US20120068191A1 (en) | 2012-03-22 |
US7816764B2 (en) | 2010-10-19 |
JP5095064B2 (ja) | 2012-12-12 |
US8525230B2 (en) | 2013-09-03 |
US20090242898A1 (en) | 2009-10-01 |
US7655090B2 (en) | 2010-02-02 |
US20080102610A1 (en) | 2008-05-01 |
JP2004506323A (ja) | 2004-02-26 |
US20140367698A1 (en) | 2014-12-18 |
AU2001279163A1 (en) | 2002-02-18 |
WO2002013245A1 (en) | 2002-02-14 |
US7687888B2 (en) | 2010-03-30 |
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