JP5095064B2 - シリコン基板上に堆積された窒化物層を有する半導体フィルムおよびその製造方法 - Google Patents

シリコン基板上に堆積された窒化物層を有する半導体フィルムおよびその製造方法 Download PDF

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JP5095064B2
JP5095064B2 JP2002518510A JP2002518510A JP5095064B2 JP 5095064 B2 JP5095064 B2 JP 5095064B2 JP 2002518510 A JP2002518510 A JP 2002518510A JP 2002518510 A JP2002518510 A JP 2002518510A JP 5095064 B2 JP5095064 B2 JP 5095064B2
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nitride layer
composition
semiconductor film
aluminum content
aluminum
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JP2004506323A (ja
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マーチャンド、ヒューグズ
モラン、ブレンダン、ジェイ．
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University of California
University of California Berkeley
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University of California San Diego UCSD
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  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP2002518510A 2000-08-04 2001-08-03 シリコン基板上に堆積された窒化物層を有する半導体フィルムおよびその製造方法 Expired - Lifetime JP5095064B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22283700P 2000-08-04 2000-08-04
US60/222,837 2000-08-04
PCT/US2001/024347 WO2002013245A1 (en) 2000-08-04 2001-08-03 Method of controlling stress in gallium nitride films deposited on substrates

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JP2011278534A Division JP5331868B2 (ja) 2000-08-04 2011-12-20 窒化物層上の光電子又は電子デバイス及びその製造方法

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JP2004506323A JP2004506323A (ja) 2004-02-26
JP5095064B2 true JP5095064B2 (ja) 2012-12-12

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JP2002518510A Expired - Lifetime JP5095064B2 (ja) 2000-08-04 2001-08-03 シリコン基板上に堆積された窒化物層を有する半導体フィルムおよびその製造方法
JP2011278534A Expired - Fee Related JP5331868B2 (ja) 2000-08-04 2011-12-20 窒化物層上の光電子又は電子デバイス及びその製造方法
JP2013121497A Withdrawn JP2013216573A (ja) 2000-08-04 2013-06-10 基板上に堆積された窒化ガリウムフィルムにおける応力の制御方法

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JP2011278534A Expired - Fee Related JP5331868B2 (ja) 2000-08-04 2011-12-20 窒化物層上の光電子又は電子デバイス及びその製造方法
JP2013121497A Withdrawn JP2013216573A (ja) 2000-08-04 2013-06-10 基板上に堆積された窒化ガリウムフィルムにおける応力の制御方法

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US (6) US7687888B2 (enExample)
EP (2) EP2276059A1 (enExample)
JP (3) JP5095064B2 (enExample)
AU (1) AU2001279163A1 (enExample)
WO (1) WO2002013245A1 (enExample)

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