JP2010239066A5 - - Google Patents

Download PDF

Info

Publication number
JP2010239066A5
JP2010239066A5 JP2009087933A JP2009087933A JP2010239066A5 JP 2010239066 A5 JP2010239066 A5 JP 2010239066A5 JP 2009087933 A JP2009087933 A JP 2009087933A JP 2009087933 A JP2009087933 A JP 2009087933A JP 2010239066 A5 JP2010239066 A5 JP 2010239066A5
Authority
JP
Japan
Prior art keywords
layer
semiconductor device
manufacturing
forming
growth apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009087933A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010239066A (ja
JP5367434B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009087933A priority Critical patent/JP5367434B2/ja
Priority claimed from JP2009087933A external-priority patent/JP5367434B2/ja
Priority to US12/750,011 priority patent/US7947578B2/en
Priority to EP10158830.9A priority patent/EP2236646B1/en
Publication of JP2010239066A publication Critical patent/JP2010239066A/ja
Publication of JP2010239066A5 publication Critical patent/JP2010239066A5/ja
Application granted granted Critical
Publication of JP5367434B2 publication Critical patent/JP5367434B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009087933A 2009-03-31 2009-03-31 半導体装置の製造方法 Active JP5367434B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009087933A JP5367434B2 (ja) 2009-03-31 2009-03-31 半導体装置の製造方法
US12/750,011 US7947578B2 (en) 2009-03-31 2010-03-30 Method for fabricating semiconductor device
EP10158830.9A EP2236646B1 (en) 2009-03-31 2010-03-31 Method for fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009087933A JP5367434B2 (ja) 2009-03-31 2009-03-31 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010239066A JP2010239066A (ja) 2010-10-21
JP2010239066A5 true JP2010239066A5 (enExample) 2012-05-17
JP5367434B2 JP5367434B2 (ja) 2013-12-11

Family

ID=42313028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009087933A Active JP5367434B2 (ja) 2009-03-31 2009-03-31 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US7947578B2 (enExample)
EP (1) EP2236646B1 (enExample)
JP (1) JP5367434B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120153351A1 (en) * 2010-12-21 2012-06-21 International Rectifier Corporation Stress modulated group III-V semiconductor device and related method
JP5947233B2 (ja) * 2013-02-08 2016-07-06 国立大学法人東北大学 電界効果トランジスタ
JP2015156418A (ja) * 2014-02-20 2015-08-27 株式会社ニューフレアテクノロジー 気相成長方法
US9899499B2 (en) * 2014-09-04 2018-02-20 Sunedison Semiconductor Limited (Uen201334164H) High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
KR102680861B1 (ko) * 2016-12-15 2024-07-03 삼성전자주식회사 질화 갈륨 기판의 제조 방법
CN114503382B (zh) * 2019-10-15 2024-03-26 三菱电机株式会社 半导体装置
JP7089544B2 (ja) * 2020-03-25 2022-06-22 日機装株式会社 窒化物半導体素子
US12414317B2 (en) * 2021-03-05 2025-09-09 Enkris Semiconductor, Inc. Resonant tunneling diodes and manufacturing methods thereof
JP7345623B1 (ja) 2022-12-15 2023-09-15 日機装株式会社 成膜部材の製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6615059A (enExample) * 1966-10-25 1968-04-26
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
DE69530678T2 (de) * 1994-02-03 2004-04-01 Ngk Insulators, Ltd., Nagoya Aluminiumnitrid-sinterkörper und herstellungsverfahren dafür
JP3603598B2 (ja) * 1997-08-04 2004-12-22 住友化学株式会社 ３−５族化合物半導体の製造方法
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
JP2006044982A (ja) * 2004-08-04 2006-02-16 Sumitomo Electric Ind Ltd 窒化物半導体単結晶基板とその合成方法
US7544963B2 (en) * 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
US9157169B2 (en) * 2005-09-14 2015-10-13 International Rectifier Corporation Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
US8435879B2 (en) * 2005-12-12 2013-05-07 Kyma Technologies, Inc. Method for making group III nitride articles
US20080054248A1 (en) * 2006-09-06 2008-03-06 Chua Christopher L Variable period variable composition supperlattice and devices including same
JP5079361B2 (ja) * 2007-03-23 2012-11-21 日本碍子株式会社 ＡｌＧａＮ結晶層の形成方法
JP2009007205A (ja) * 2007-06-28 2009-01-15 Sumitomo Electric Ind Ltd 基板生産物を作製する方法
JP5431667B2 (ja) * 2007-10-01 2014-03-05 富士電機株式会社 窒化ガリウム半導体装置
JP4822457B2 (ja) * 2008-03-24 2011-11-24 沖電気工業株式会社 半導体装置の製造方法
JP5112370B2 (ja) * 2009-03-23 2013-01-09 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法

Similar Documents

Publication Publication Date Title
JP2010239066A5 (enExample)
JP2010135845A5 (enExample)
Guo et al. Comparative study of etching high crystalline quality AlN and GaN
WO2007002028A3 (en) Layer growth using metal film and/or islands
US20160211330A1 (en) High electron mobility transistor
JP2004193617A5 (enExample)
JP2009123718A5 (enExample)
CN103904177B (zh) 发光二极管外延片及其制造方法
JP2012109583A5 (enExample)
JP2015167231A5 (enExample)
JP2010501117A5 (enExample)
JP2013512567A5 (enExample)
CN103545348B (zh) 用于硅衬底上的iii族氮化物的扩散阻挡层
CN104485400A (zh) 一种iii-v族氮化物的外延结构及其生长方法
US20130334495A1 (en) Superlattice structure, semiconductor device including the same, and method of manufacturing the semiconductor device
CN103500780A (zh) 一种氮化镓基led外延结构及其制备方法
EP2273553A3 (en) A method for fabricating AlGaN/GaN HEMT devices
JP2006310765A5 (enExample)
US8994032B2 (en) III-N material grown on ErAIN buffer on Si substrate
CN102790155B (zh) 氮化物半导体器件和晶片以及制造氮化物半导体层的方法
CN105590839A (zh) 氮化物底层、发光二极管及底层制备方法
CN106025016B (zh) 一种发光二极管外延片及其制备方法
JP2014022685A (ja) 半導体積層構造およびこれを用いた半導体素子
TW200631079A (en) Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound
CN104009140A (zh) 一种发光二极管外延片及其制作方法