JP2010239066A - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000012535 impurity Substances 0.000 claims abstract description 19
- 150000004767 nitrides Chemical class 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims description 41
- 238000004519 manufacturing process Methods 0.000 claims description 25
- 229910002704 AlGaN Inorganic materials 0.000 claims description 21
- 239000002994 raw material Substances 0.000 claims description 19
- 239000000470 constituent Substances 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 29
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 123
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 18
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 17
- 238000001451 molecular beam epitaxy Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 9
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- H01L21/02367—Substrates
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- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H01L21/02612—Formation types
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
【解決手段】Siからなる基板上に、構成元素としてGaを含まず、かつGa不純物濃度が2×1018atoms/cm3以下のAlN層を形成する第1工程と、前記第1工程を複数回繰り返した後、AlN層の成長に使用した成長装置を用いて、AlN層上に構成元素としてGaを含む窒化物半導体からなるGaN層を形成する第2工程と、を有する半導体装置の製造方法。また、第1工程と第2工程とを別の装置を用いて実施してもよい。
【選択図】図6
Description
導電層 3
AlN層 4、4a、4b
AlGaN層 6、10
GaN層 8、12
Claims (11)
- Gaを含む半導体層の成長に用いた成長装置をクリーニングするクリーニング工程と、
Siからなる基板上に、構成元素としてGaを含まず、かつGa不純物濃度が2×1018atoms/cm3以下の窒化物半導体からなる第1層を形成する第1工程と、
前記第1工程を複数回繰り返した後、前記第1層上に前記第1層の成長に使用した成長装置を用いて、Gaを含む窒化物半導体からなる第2層を形成する第2工程と、を有することを特徴とする半導体装置の製造方法。 - Siからなる基板上に、構成元素としてGaを含まず、かつGa不純物濃度が2×1018atoms/cm3以下の窒化物半導体からなる第1層を形成する第1工程と、
前記第1層の成長に使用した成長装置とは別の成長装置を用いて、前記第1層上にGaを含む窒化物半導体からなる第2層を形成する第2工程と、を有することを特徴とする半導体装置の製造方法。 - 前記第1工程の後であって前記第2工程の前に、前記第1層上に構成元素としてGaを含まない第3層を形成する第3工程を有し、
前記第2工程は前記第3工程と連続して行われ、
前記第2層は前記第3層上に形成されることを特徴とする請求項1または2記載の半導体装置の製造方法。 - 前記第3層は前記第1層と同一の構成元素からなることを特徴とする請求項3記載の半導体装置の製造方法。
- 前記第1層はAlNからなることを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記第2層はGaN、InGaN、AlGaN及びInAlGaNの少なくとも一つからなることを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記第1工程、前記第2工程、及び前記第3工程において用いられる前記成長装置は、HVPE装置、MOCVD装置、MBE装置のいずれかであることを特徴とする請求項1から3いずれか一項記載の半導体装置の製造方法。
- 前記第1工程に用いられる前記成長装置はMOCVD装置であり、
Alの有機原料中のAlに対するGa含有量が2ppm以下であることを特徴とする請求項1または2記載の半導体装置の成長方法。 - 前記第1工程に用いられる前記成長装置はMBE装置であり、
Alの有機原料中のAlに対するGa含有量が40ppm以下であることを特徴とする請求項1または2記載の半導体装置の成長方法。 - 前記第1層の膜厚は200nm以下であることを特徴とする請求項1または2記載の半導体装置の成長方法。
- 前記第3層の膜厚は150nm以上であることを特徴とする請求項3記載の半導体装置の成長方法。
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JP2009087933A JP5367434B2 (ja) | 2009-03-31 | 2009-03-31 | 半導体装置の製造方法 |
US12/750,011 US7947578B2 (en) | 2009-03-31 | 2010-03-30 | Method for fabricating semiconductor device |
EP10158830.9A EP2236646B1 (en) | 2009-03-31 | 2010-03-31 | Method for fabricating semiconductor device |
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JP2010239066A5 JP2010239066A5 (ja) | 2012-05-17 |
JP5367434B2 JP5367434B2 (ja) | 2013-12-11 |
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Cited By (4)
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JP2014154729A (ja) * | 2013-02-08 | 2014-08-25 | Furukawa Electric Co Ltd:The | 電界効果トランジスタ |
JP2015156418A (ja) * | 2014-02-20 | 2015-08-27 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
JP2021185618A (ja) * | 2020-03-25 | 2021-12-09 | 日機装株式会社 | 窒化物半導体素子の製造方法 |
JP7345623B1 (ja) | 2022-12-15 | 2023-09-15 | 日機装株式会社 | 成膜部材の製造方法 |
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US9899499B2 (en) * | 2014-09-04 | 2018-02-20 | Sunedison Semiconductor Limited (Uen201334164H) | High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss |
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JP2014154729A (ja) * | 2013-02-08 | 2014-08-25 | Furukawa Electric Co Ltd:The | 電界効果トランジスタ |
JP2015156418A (ja) * | 2014-02-20 | 2015-08-27 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
KR20160006149A (ko) * | 2014-02-20 | 2016-01-18 | 가부시키가이샤 뉴플레어 테크놀로지 | 기상 성장 방법 |
KR101704305B1 (ko) | 2014-02-20 | 2017-02-07 | 가부시키가이샤 뉴플레어 테크놀로지 | 기상 성장 방법 |
JP2021185618A (ja) * | 2020-03-25 | 2021-12-09 | 日機装株式会社 | 窒化物半導体素子の製造方法 |
JP7166404B2 (ja) | 2020-03-25 | 2022-11-07 | 日機装株式会社 | 窒化物半導体素子の製造方法 |
JP7345623B1 (ja) | 2022-12-15 | 2023-09-15 | 日機装株式会社 | 成膜部材の製造方法 |
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