JP5367434B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5367434B2
JP5367434B2 JP2009087933A JP2009087933A JP5367434B2 JP 5367434 B2 JP5367434 B2 JP 5367434B2 JP 2009087933 A JP2009087933 A JP 2009087933A JP 2009087933 A JP2009087933 A JP 2009087933A JP 5367434 B2 JP5367434 B2 JP 5367434B2
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layer
semiconductor device
aln layer
aln
gan
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Japanese (ja)
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JP2010239066A (ja
JP2010239066A5 (enExample
Inventor
勇夫 眞壁
健 中田
剛志 河内
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2009087933A priority Critical patent/JP5367434B2/ja
Priority to US12/750,011 priority patent/US7947578B2/en
Priority to EP10158830.9A priority patent/EP2236646B1/en
Publication of JP2010239066A publication Critical patent/JP2010239066A/ja
Publication of JP2010239066A5 publication Critical patent/JP2010239066A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2009087933A 2009-03-31 2009-03-31 半導体装置の製造方法 Active JP5367434B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009087933A JP5367434B2 (ja) 2009-03-31 2009-03-31 半導体装置の製造方法
US12/750,011 US7947578B2 (en) 2009-03-31 2010-03-30 Method for fabricating semiconductor device
EP10158830.9A EP2236646B1 (en) 2009-03-31 2010-03-31 Method for fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009087933A JP5367434B2 (ja) 2009-03-31 2009-03-31 半導体装置の製造方法

Publications (3)

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JP2010239066A JP2010239066A (ja) 2010-10-21
JP2010239066A5 JP2010239066A5 (enExample) 2012-05-17
JP5367434B2 true JP5367434B2 (ja) 2013-12-11

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US (1) US7947578B2 (enExample)
EP (1) EP2236646B1 (enExample)
JP (1) JP5367434B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120153351A1 (en) * 2010-12-21 2012-06-21 International Rectifier Corporation Stress modulated group III-V semiconductor device and related method
JP5947233B2 (ja) * 2013-02-08 2016-07-06 国立大学法人東北大学 電界効果トランジスタ
JP2015156418A (ja) * 2014-02-20 2015-08-27 株式会社ニューフレアテクノロジー 気相成長方法
US9899499B2 (en) * 2014-09-04 2018-02-20 Sunedison Semiconductor Limited (Uen201334164H) High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
KR102680861B1 (ko) * 2016-12-15 2024-07-03 삼성전자주식회사 질화 갈륨 기판의 제조 방법
CN114503382B (zh) * 2019-10-15 2024-03-26 三菱电机株式会社 半导体装置
JP7089544B2 (ja) * 2020-03-25 2022-06-22 日機装株式会社 窒化物半導体素子
US12414317B2 (en) * 2021-03-05 2025-09-09 Enkris Semiconductor, Inc. Resonant tunneling diodes and manufacturing methods thereof
JP7345623B1 (ja) 2022-12-15 2023-09-15 日機装株式会社 成膜部材の製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6615059A (enExample) * 1966-10-25 1968-04-26
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
EP0743290B1 (en) * 1994-02-03 2003-05-07 Ngk Insulators, Ltd. Aluminum nitride sinter and production method therefor
JP3603598B2 (ja) * 1997-08-04 2004-12-22 住友化学株式会社 ３−５族化合物半導体の製造方法
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
JP2006044982A (ja) * 2004-08-04 2006-02-16 Sumitomo Electric Ind Ltd 窒化物半導体単結晶基板とその合成方法
US7544963B2 (en) * 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
US9157169B2 (en) * 2005-09-14 2015-10-13 International Rectifier Corporation Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
WO2008048303A2 (en) * 2005-12-12 2008-04-24 Kyma Technologies, Inc. Group iii nitride articles and methods for making same
US20080054248A1 (en) * 2006-09-06 2008-03-06 Chua Christopher L Variable period variable composition supperlattice and devices including same
JP5079361B2 (ja) * 2007-03-23 2012-11-21 日本碍子株式会社 ＡｌＧａＮ結晶層の形成方法
JP2009007205A (ja) * 2007-06-28 2009-01-15 Sumitomo Electric Ind Ltd 基板生産物を作製する方法
JP5431667B2 (ja) * 2007-10-01 2014-03-05 富士電機株式会社 窒化ガリウム半導体装置
JP4822457B2 (ja) * 2008-03-24 2011-11-24 沖電気工業株式会社 半導体装置の製造方法
JP5112370B2 (ja) * 2009-03-23 2013-01-09 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法

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Publication number Publication date
US20100248459A1 (en) 2010-09-30
EP2236646B1 (en) 2018-06-13
JP2010239066A (ja) 2010-10-21
US7947578B2 (en) 2011-05-24
EP2236646A1 (en) 2010-10-06

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