JP2010501117A5 - - Google Patents

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Publication number
JP2010501117A5
JP2010501117A5 JP2009524673A JP2009524673A JP2010501117A5 JP 2010501117 A5 JP2010501117 A5 JP 2010501117A5 JP 2009524673 A JP2009524673 A JP 2009524673A JP 2009524673 A JP2009524673 A JP 2009524673A JP 2010501117 A5 JP2010501117 A5 JP 2010501117A5
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JP
Japan
Prior art keywords
nitride semiconductor
quantum well
nitride
layer
semiconductor film
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009524673A
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English (en)
Japanese (ja)
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JP2010501117A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2007/018074 external-priority patent/WO2008021403A2/en
Publication of JP2010501117A publication Critical patent/JP2010501117A/ja
Publication of JP2010501117A5 publication Critical patent/JP2010501117A5/ja
Pending legal-status Critical Current

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JP2009524673A 2006-08-16 2007-08-16 マグネシウムをドーピングされた（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ層の堆積方法 Pending JP2010501117A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82260006P 2006-08-16 2006-08-16
PCT/US2007/018074 WO2008021403A2 (en) 2006-08-16 2007-08-16 Method for deposition of magnesium doped (al, in, ga, b)n layers

Publications (2)

Publication Number Publication Date
JP2010501117A JP2010501117A (ja) 2010-01-14
JP2010501117A5 true JP2010501117A5 (enExample) 2012-07-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009524673A Pending JP2010501117A (ja) 2006-08-16 2007-08-16 マグネシウムをドーピングされた（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ層の堆積方法

Country Status (3)

Country Link
US (1) US7709284B2 (enExample)
JP (1) JP2010501117A (enExample)
WO (1) WO2008021403A2 (enExample)

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US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
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