JP2010501117A - マグネシウムをドーピングされた（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ層の堆積方法 - Google Patents

マグネシウムをドーピングされた（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ層の堆積方法 Download PDF

Info

Publication number
JP2010501117A
JP2010501117A JP2009524673A JP2009524673A JP2010501117A JP 2010501117 A JP2010501117 A JP 2010501117A JP 2009524673 A JP2009524673 A JP 2009524673A JP 2009524673 A JP2009524673 A JP 2009524673A JP 2010501117 A JP2010501117 A JP 2010501117A
Authority
JP
Japan
Prior art keywords
thin film
nitride
nitride semiconductor
quantum well
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009524673A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010501117A5 (enExample
Inventor
マイケル イザ，
均 佐藤
スティーブン ピー． デンバース，
シュウジ ナカムラ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of JP2010501117A publication Critical patent/JP2010501117A/ja
Publication of JP2010501117A5 publication Critical patent/JP2010501117A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2009524673A 2006-08-16 2007-08-16 マグネシウムをドーピングされた（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ層の堆積方法 Pending JP2010501117A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82260006P 2006-08-16 2006-08-16
PCT/US2007/018074 WO2008021403A2 (en) 2006-08-16 2007-08-16 Method for deposition of magnesium doped (al, in, ga, b)n layers

Publications (2)

Publication Number Publication Date
JP2010501117A true JP2010501117A (ja) 2010-01-14
JP2010501117A5 JP2010501117A5 (enExample) 2012-07-26

Family

ID=39082717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009524673A Pending JP2010501117A (ja) 2006-08-16 2007-08-16 マグネシウムをドーピングされた（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ層の堆積方法

Country Status (3)

Country Link
US (1) US7709284B2 (enExample)
JP (1) JP2010501117A (enExample)
WO (1) WO2008021403A2 (enExample)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010512660A (ja) * 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性および半極性の発光デバイス
TWI533351B (zh) 2006-12-11 2016-05-11 美國加利福尼亞大學董事會 高效能非極性第三族氮化物光學裝置之金屬有機化學氣相沈積生長
US20090309127A1 (en) * 2008-06-13 2009-12-17 Soraa, Inc. Selective area epitaxy growth method and structure
US8847249B2 (en) * 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US8143148B1 (en) 2008-07-14 2012-03-27 Soraa, Inc. Self-aligned multi-dielectric-layer lift off process for laser diode stripes
US8767787B1 (en) 2008-07-14 2014-07-01 Soraa Laser Diode, Inc. Integrated laser diodes with quality facets on GaN substrates
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
CN105762249A (zh) 2008-08-04 2016-07-13 Soraa有限公司 使用非极性或半极性的含镓材料和磷光体的白光器件
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
WO2010120819A1 (en) * 2009-04-13 2010-10-21 Kaai, Inc. Optical device structure using gan substrates for laser applications
US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US20110056429A1 (en) * 2009-08-21 2011-03-10 Soraa, Inc. Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
WO2011056456A1 (en) * 2009-11-03 2011-05-12 The Regents Of The University Of California Techniques for achieving low resistance contacts to nonpolar and semipolar p-type (al,ga,i)n
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
US9236530B2 (en) 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
US9287684B2 (en) * 2011-04-04 2016-03-15 Soraa Laser Diode, Inc. Laser package having multiple emitters with color wheel
US9646827B1 (en) 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
US8971370B1 (en) 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
US9020003B1 (en) 2012-03-14 2015-04-28 Soraa Laser Diode, Inc. Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
US9343871B1 (en) 2012-04-05 2016-05-17 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9800016B1 (en) 2012-04-05 2017-10-24 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9099843B1 (en) 2012-07-19 2015-08-04 Soraa Laser Diode, Inc. High operating temperature laser diodes
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
CN109786521B (zh) * 2018-12-26 2020-11-10 华灿光电（浙江）有限公司 一种发光二极管的外延片及制备方法
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
RU2720046C1 (ru) * 2019-07-17 2020-04-23 Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" Светодиодная гетероструктура с квантовыми ямами комбинированного профиля
CN111540814B (zh) * 2020-05-09 2023-03-21 湘能华磊光电股份有限公司 一种提升量子效率的led外延生长方法
CN114220890B (zh) * 2021-12-21 2023-08-22 江苏第三代半导体研究院有限公司 外延片及其制作方法和应用
CN114551664A (zh) * 2022-01-26 2022-05-27 江西兆驰半导体有限公司 一种led外延片、外延生长方法及led芯片
CN117410179B (zh) * 2023-09-26 2025-01-24 华南理工大学 一种N极性AlGaN-GaN异质结外延结构及其制备方法和应用
CN118099301B (zh) * 2024-04-29 2024-08-02 江西兆驰半导体有限公司 复合N型GaN层及制备方法、外延片及LED

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330552A (ja) * 1998-05-18 1999-11-30 Nichia Chem Ind Ltd 窒化物半導体発光素子及び発光装置
JP2000299532A (ja) * 1999-02-10 2000-10-24 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2001007448A (ja) * 1999-06-24 2001-01-12 Sharp Corp 窒化物系化合物半導体発光素子およびその製造方法
JP2003086903A (ja) * 2001-09-07 2003-03-20 Sony Corp 半導体発光素子およびその製造方法
JP2003298110A (ja) * 2003-04-24 2003-10-17 Sony Corp 半導体の成長方法および半導体発光素子の製造方法
JP2004104088A (ja) * 2003-06-27 2004-04-02 Nichia Chem Ind Ltd 窒化物半導体素子
JP2004260152A (ja) * 2003-02-07 2004-09-16 Sanyo Electric Co Ltd 半導体素子およびその製造方法
WO2005022711A1 (ja) * 2003-08-29 2005-03-10 Nec Corporation 窒化物半導体発光素子およびその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
WO1999066565A1 (en) * 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
WO2000033388A1 (en) * 1998-11-24 2000-06-08 Massachusetts Institute Of Technology METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
JP3639789B2 (ja) * 2001-01-31 2005-04-20 シャープ株式会社 窒化物系半導体発光素子
JP2002319702A (ja) * 2001-04-19 2002-10-31 Sony Corp 窒化物半導体素子の製造方法、窒化物半導体素子
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US7105865B2 (en) * 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
DE60225322T2 (de) * 2001-11-05 2009-02-26 Nichia Corp., Anan Halbleiterelement
US7186302B2 (en) * 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7372077B2 (en) * 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
US7078735B2 (en) * 2003-03-27 2006-07-18 Sanyo Electric Co., Ltd. Light-emitting device and illuminator
KR100641989B1 (ko) * 2003-10-15 2006-11-02 엘지이노텍 주식회사 질화물 반도체 발광소자
KR100541102B1 (ko) * 2004-02-13 2006-01-11 삼성전기주식회사 오믹 접촉을 개선한 질화물 반도체 발광소자 및 그 제조방법
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330552A (ja) * 1998-05-18 1999-11-30 Nichia Chem Ind Ltd 窒化物半導体発光素子及び発光装置
JP2000299532A (ja) * 1999-02-10 2000-10-24 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2001007448A (ja) * 1999-06-24 2001-01-12 Sharp Corp 窒化物系化合物半導体発光素子およびその製造方法
JP2003086903A (ja) * 2001-09-07 2003-03-20 Sony Corp 半導体発光素子およびその製造方法
JP2004260152A (ja) * 2003-02-07 2004-09-16 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2003298110A (ja) * 2003-04-24 2003-10-17 Sony Corp 半導体の成長方法および半導体発光素子の製造方法
JP2004104088A (ja) * 2003-06-27 2004-04-02 Nichia Chem Ind Ltd 窒化物半導体素子
WO2005022711A1 (ja) * 2003-08-29 2005-03-10 Nec Corporation 窒化物半導体発光素子およびその製造方法

Also Published As

Publication number Publication date
WO2008021403A3 (en) 2008-04-10
US7709284B2 (en) 2010-05-04
WO2008021403A2 (en) 2008-02-21
US20080042121A1 (en) 2008-02-21

Similar Documents

Publication Publication Date Title
US7709284B2 (en) Method for deposition of magnesium doped (Al, In, Ga, B)N layers
TWI683448B (zh) Iii族氮化物半導體發光元件及其製造方法
CN107851689B (zh) Ⅲ族氮化物半导体发光元件及其制造方法
JP3594826B2 (ja) 窒化物半導体発光素子及びその製造方法
CN104205297B (zh) 制造非极性氮化镓基半导体层的方法、非极性半导体器件及其制造方法
US20020175341A1 (en) Process for production of a nitride semiconductor device and a nitride semiconductor device
JP2013191851A (ja) （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法
JP2016171127A (ja) Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US20090072221A1 (en) Nitride semiconductor device and method for fabricating the same
JP2005019872A (ja) 窒化物半導体の製造方法及び半導体ウエハ並びに半導体デバイス
JP6766243B2 (ja) Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP3269344B2 (ja) 結晶成長方法および半導体発光素子
US8053756B2 (en) Nitride semiconductor light emitting element
US20100065812A1 (en) Nitride semiconductor light emitting element
WO2020095826A1 (ja) Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US8431936B2 (en) Method for fabricating a p-type semiconductor structure
US20080283854A1 (en) Light emitting diode device layer structure using an indium gallium nitride contact layer
JP3857467B2 (ja) 窒化ガリウム系化合物半導体とその製造方法
CN100555686C (zh) 半导体发光器件及其制造方法
JP2001102633A (ja) 窒化物系化合物半導体発光素子の製造方法
JP2012204540A (ja) 半導体装置およびその製造方法
JP2006100518A (ja) 基板表面処理方法及びｉｉｉ族窒化物系化合物半導体発光素子の製造方法。
JP4284944B2 (ja) 窒化ガリウム系半導体レーザ素子の製造方法
JP4940670B2 (ja) 窒化物半導体発光素子を作製する方法
JP2015115343A (ja) 窒化物半導体素子の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100702

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100702

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110617

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120608

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120620

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120710

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120910

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120918

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130110

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130726

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20131219