JP2000101142A5 - - Google Patents

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Publication number
JP2000101142A5
JP2000101142A5 JP1998271605A JP27160598A JP2000101142A5 JP 2000101142 A5 JP2000101142 A5 JP 2000101142A5 JP 1998271605 A JP1998271605 A JP 1998271605A JP 27160598 A JP27160598 A JP 27160598A JP 2000101142 A5 JP2000101142 A5 JP 2000101142A5
Authority
JP
Japan
Prior art keywords
layer
contact layer
superlattice structure
changing
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998271605A
Other languages
English (en)
Japanese (ja)
Other versions
JP4150449B2 (ja
JP2000101142A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP27160598A priority Critical patent/JP4150449B2/ja
Priority claimed from JP27160598A external-priority patent/JP4150449B2/ja
Publication of JP2000101142A publication Critical patent/JP2000101142A/ja
Publication of JP2000101142A5 publication Critical patent/JP2000101142A5/ja
Application granted granted Critical
Publication of JP4150449B2 publication Critical patent/JP4150449B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP27160598A 1998-09-25 1998-09-25 化合物半導体素子 Expired - Fee Related JP4150449B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27160598A JP4150449B2 (ja) 1998-09-25 1998-09-25 化合物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27160598A JP4150449B2 (ja) 1998-09-25 1998-09-25 化合物半導体素子

Publications (3)

Publication Number Publication Date
JP2000101142A JP2000101142A (ja) 2000-04-07
JP2000101142A5 true JP2000101142A5 (enExample) 2005-10-13
JP4150449B2 JP4150449B2 (ja) 2008-09-17

Family

ID=17502414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27160598A Expired - Fee Related JP4150449B2 (ja) 1998-09-25 1998-09-25 化合物半導体素子

Country Status (1)

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JP (1) JP4150449B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
JP2001223440A (ja) * 2000-02-08 2001-08-17 Fuji Photo Film Co Ltd 半導体レーザ装置
JP2002314204A (ja) * 2001-04-16 2002-10-25 Ricoh Co Ltd ｐ型超格子構造とその作製方法、ＩＩＩ族窒化物半導体素子及びＩＩＩ族窒化物半導体発光素子
JP2002314199A (ja) * 2001-04-17 2002-10-25 Sony Corp 半導体レーザ素子及びその作製方法
CN100377369C (zh) * 2001-07-04 2008-03-26 日亚化学工业株式会社 氮化物半导体元件
US7485902B2 (en) * 2002-09-18 2009-02-03 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
CN1333470C (zh) * 2004-02-27 2007-08-22 广镓光电股份有限公司 发光二极管结构
TWI237402B (en) 2004-03-24 2005-08-01 Epistar Corp High luminant device
US7385226B2 (en) 2004-03-24 2008-06-10 Epistar Corporation Light-emitting device
US9508902B2 (en) 2005-02-21 2016-11-29 Epistar Corporation Optoelectronic semiconductor device
US8097897B2 (en) 2005-06-21 2012-01-17 Epistar Corporation High-efficiency light-emitting device and manufacturing method thereof
KR100609117B1 (ko) * 2005-05-03 2006-08-08 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
CN101604665A (zh) * 2007-07-20 2009-12-16 镓力姆企业私人有限公司 用于氮化物基膜以及其制造的掩埋接触器件

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